TW371374B - Structure of high voltage device and production process thereof - Google Patents
Structure of high voltage device and production process thereofInfo
- Publication number
- TW371374B TW371374B TW087112290A TW87112290A TW371374B TW 371374 B TW371374 B TW 371374B TW 087112290 A TW087112290 A TW 087112290A TW 87112290 A TW87112290 A TW 87112290A TW 371374 B TW371374 B TW 371374B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- increase
- high voltage
- production process
- region
- Prior art date
Links
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
A high voltage device structure and a production process thereof. The process comprises forming a lighter doping region in the substrate beneath the gate in order to increase the dopant concentration thereby further increasing the dopant concentration in the drift region so as to increase the current driving power thereof. Furthermore, the drain region will not come into direct contact with the substrate and connects with a lightly doping region thereby reducing the electric field strength at the connection face thereof, so that the portion near the connection face between the drain region and the substrate will not easy to form the phenomena of potential crowding and further increase the voltage of electrical breakdown.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087112290A TW371374B (en) | 1998-07-28 | 1998-07-28 | Structure of high voltage device and production process thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087112290A TW371374B (en) | 1998-07-28 | 1998-07-28 | Structure of high voltage device and production process thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
TW371374B true TW371374B (en) | 1999-10-01 |
Family
ID=57941550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087112290A TW371374B (en) | 1998-07-28 | 1998-07-28 | Structure of high voltage device and production process thereof |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW371374B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7056797B2 (en) | 2001-01-16 | 2006-06-06 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
-
1998
- 1998-07-28 TW TW087112290A patent/TW371374B/en not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7056797B2 (en) | 2001-01-16 | 2006-06-06 | Sanyo Electric Co., Ltd. | Semiconductor device and method of manufacturing the same |
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Legal Events
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MK4A | Expiration of patent term of an invention patent |