TW371374B - Structure of high voltage device and production process thereof - Google Patents

Structure of high voltage device and production process thereof

Info

Publication number
TW371374B
TW371374B TW087112290A TW87112290A TW371374B TW 371374 B TW371374 B TW 371374B TW 087112290 A TW087112290 A TW 087112290A TW 87112290 A TW87112290 A TW 87112290A TW 371374 B TW371374 B TW 371374B
Authority
TW
Taiwan
Prior art keywords
substrate
increase
high voltage
production process
region
Prior art date
Application number
TW087112290A
Other languages
Chinese (zh)
Inventor
Sheng-Hsiung Yang
Kuan-Yu Fu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW087112290A priority Critical patent/TW371374B/en
Application granted granted Critical
Publication of TW371374B publication Critical patent/TW371374B/en

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A high voltage device structure and a production process thereof. The process comprises forming a lighter doping region in the substrate beneath the gate in order to increase the dopant concentration thereby further increasing the dopant concentration in the drift region so as to increase the current driving power thereof. Furthermore, the drain region will not come into direct contact with the substrate and connects with a lightly doping region thereby reducing the electric field strength at the connection face thereof, so that the portion near the connection face between the drain region and the substrate will not easy to form the phenomena of potential crowding and further increase the voltage of electrical breakdown.
TW087112290A 1998-07-28 1998-07-28 Structure of high voltage device and production process thereof TW371374B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087112290A TW371374B (en) 1998-07-28 1998-07-28 Structure of high voltage device and production process thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087112290A TW371374B (en) 1998-07-28 1998-07-28 Structure of high voltage device and production process thereof

Publications (1)

Publication Number Publication Date
TW371374B true TW371374B (en) 1999-10-01

Family

ID=57941550

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087112290A TW371374B (en) 1998-07-28 1998-07-28 Structure of high voltage device and production process thereof

Country Status (1)

Country Link
TW (1) TW371374B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7056797B2 (en) 2001-01-16 2006-06-06 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7056797B2 (en) 2001-01-16 2006-06-06 Sanyo Electric Co., Ltd. Semiconductor device and method of manufacturing the same

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