TW371360B - Method of measuring oxide film dielectric strength of semiconductor wafer - Google Patents

Method of measuring oxide film dielectric strength of semiconductor wafer

Info

Publication number
TW371360B
TW371360B TW086107193A TW86107193A TW371360B TW 371360 B TW371360 B TW 371360B TW 086107193 A TW086107193 A TW 086107193A TW 86107193 A TW86107193 A TW 86107193A TW 371360 B TW371360 B TW 371360B
Authority
TW
Taiwan
Prior art keywords
semiconductor wafer
oxide film
dielectric strength
film dielectric
etched
Prior art date
Application number
TW086107193A
Other languages
Chinese (zh)
Inventor
Masahiko Maeda
Yasumitsu Harada
Hisami Motoura
Eiichi Asano
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Application granted granted Critical
Publication of TW371360B publication Critical patent/TW371360B/en

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Weting (AREA)

Abstract

To prevent the contamination which might be caused by the sacrifice oxidation method by etching the surface of a semiconductor wafer under test to remove its working strain layer before forming a measuring element. Before forming a measuring element, a finish-polished semiconductor wafer under test is etched with an SC-1(NH4OH/H2O2/H2O) liq. To remove a surface working strain layer of the wafer, and GOI (oxide film dielectric strength characteristic) of each semiconductor wafer is measured to compute the non-defective ratio such that the finish-polished surface of the semiconductor wafer is etched to a depth of 10 nm or more to measure GOT (oxide film dielectric strength characteristic), thereby preparing a sample to evaluate the crystal quality. Thus it is possible to prevent the contamination which might be caused by the sacrifice oxidation method and improve the semiconductor wafer quality.
TW086107193A 1996-10-04 1997-05-27 Method of measuring oxide film dielectric strength of semiconductor wafer TW371360B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29920196A JPH10112486A (en) 1996-10-04 1996-10-04 Method of measuring oxide film dielectric strength of semiconductor wafer

Publications (1)

Publication Number Publication Date
TW371360B true TW371360B (en) 1999-10-01

Family

ID=17869461

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086107193A TW371360B (en) 1996-10-04 1997-05-27 Method of measuring oxide film dielectric strength of semiconductor wafer

Country Status (2)

Country Link
JP (1) JPH10112486A (en)
TW (1) TW371360B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104907654B (en) * 2015-07-02 2017-11-21 常州工学院 A kind of electrolytic method that Surface Texture is carried out using cellular plastic plate

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4529036B2 (en) * 1999-09-24 2010-08-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Manufacturing method of thin film wafer for semiconductor
JP4693188B2 (en) * 2008-07-11 2011-06-01 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Silicon wafer etching method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104907654B (en) * 2015-07-02 2017-11-21 常州工学院 A kind of electrolytic method that Surface Texture is carried out using cellular plastic plate

Also Published As

Publication number Publication date
JPH10112486A (en) 1998-04-28

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