Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics CorpfiledCriticalWinbond Electronics Corp
Priority to TW086111347ApriorityCriticalpatent/TW370709B/en
Application grantedgrantedCritical
Publication of TW370709BpublicationCriticalpatent/TW370709B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Semiconductor Memories
(AREA)
Abstract
A method of manufacturing a load, includes following steps: providing a substrate; forming a transistor on the substrate, which contains a gate; forming a first insulation layer to cover the substrate; defining the first insulation layer to form an opening on the surface of the gate part; forming a conductive layer on the substrate; defining the first conductive layer to form a connector which connects to the gate through the opening; forming a second insulation layer to cover the substrate; defining the second insulation layer to form a dielectric layer window on part of the connector surface above the gate; forming a via plug at the dielectric layer window; forming a second conductive layer on the substrate; and defining the second conductive layer to form a load which constitutes electric contact with the via plug.
TW086111347A1997-08-071997-08-07Static random access memory, load and manufacturing method
TW370709B
(en)