TW370685B - Method for manufacturing a rough-surface film layer of antireflection - Google Patents

Method for manufacturing a rough-surface film layer of antireflection

Info

Publication number
TW370685B
TW370685B TW086117696A TW86117696A TW370685B TW 370685 B TW370685 B TW 370685B TW 086117696 A TW086117696 A TW 086117696A TW 86117696 A TW86117696 A TW 86117696A TW 370685 B TW370685 B TW 370685B
Authority
TW
Taiwan
Prior art keywords
antireflection
rough
polysilicon layer
manufacturing
doped
Prior art date
Application number
TW086117696A
Other languages
English (en)
Inventor
Yung-Chieh Kuo
Chun-Hsien Lin
Chih-Hsiang Shiau
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW086117696A priority Critical patent/TW370685B/zh
Priority to US09/033,113 priority patent/US6093646A/en
Application granted granted Critical
Publication of TW370685B publication Critical patent/TW370685B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Surface Treatment Of Optical Elements (AREA)
TW086117696A 1997-11-25 1997-11-25 Method for manufacturing a rough-surface film layer of antireflection TW370685B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW086117696A TW370685B (en) 1997-11-25 1997-11-25 Method for manufacturing a rough-surface film layer of antireflection
US09/033,113 US6093646A (en) 1997-11-25 1998-03-02 Manufacturing method for a thin film with an anti-reflection rough surface

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086117696A TW370685B (en) 1997-11-25 1997-11-25 Method for manufacturing a rough-surface film layer of antireflection

Publications (1)

Publication Number Publication Date
TW370685B true TW370685B (en) 1999-09-21

Family

ID=21627292

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086117696A TW370685B (en) 1997-11-25 1997-11-25 Method for manufacturing a rough-surface film layer of antireflection

Country Status (2)

Country Link
US (1) US6093646A (zh)
TW (1) TW370685B (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6399493B1 (en) * 2001-05-17 2002-06-04 Advanced Micro Devices, Inc. Method of silicide formation by silicon pretreatment
CN117276410B (zh) * 2023-11-17 2024-03-29 浙江晶科能源有限公司 钝化接触太阳能电池及其制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324684A (en) * 1992-02-25 1994-06-28 Ag Processing Technologies, Inc. Gas phase doping of semiconductor material in a cold-wall radiantly heated reactor under reduced pressure
US5604157A (en) * 1995-05-25 1997-02-18 Industrial Technology Research Institute Reduced notching of polycide gates using silicon anti reflection layer
US5888295A (en) * 1996-08-20 1999-03-30 Micron Technology, Inc. Method of forming a silicon film

Also Published As

Publication number Publication date
US6093646A (en) 2000-07-25

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