TW366493B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
TW366493B
TW366493B TW084113090A TW84113090A TW366493B TW 366493 B TW366493 B TW 366493B TW 084113090 A TW084113090 A TW 084113090A TW 84113090 A TW84113090 A TW 84113090A TW 366493 B TW366493 B TW 366493B
Authority
TW
Taiwan
Prior art keywords
lines
memory device
semiconductor memory
word
word lines
Prior art date
Application number
TW084113090A
Other languages
English (en)
Chinese (zh)
Inventor
Chang-Ho Jung
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW366493B publication Critical patent/TW366493B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4087—Address decoders, e.g. bit - or word line decoders; Multiple line decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
TW084113090A 1994-07-18 1995-12-08 Semiconductor memory device TW366493B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940017291A KR0120582B1 (ko) 1994-07-18 1994-07-18 반도체 기억소자의 부 로우 디코더 회로

Publications (1)

Publication Number Publication Date
TW366493B true TW366493B (en) 1999-08-11

Family

ID=19388232

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084113090A TW366493B (en) 1994-07-18 1995-12-08 Semiconductor memory device

Country Status (2)

Country Link
KR (1) KR0120582B1 (ko)
TW (1) TW366493B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970076872A (ko) * 1996-05-28 1997-12-12 구오 젱-종 고밀도, 고속 읽기전용 메모리
KR100655279B1 (ko) * 2000-12-14 2006-12-08 삼성전자주식회사 불휘발성 반도체 메모리 장치

Also Published As

Publication number Publication date
KR0120582B1 (ko) 1997-10-20
KR960005611A (ko) 1996-02-23

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees