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Insulated Gate Type Field-Effect Transistor
(AREA)
Abstract
A kind of manufacturing method for semiconductor component structure which includes the following steps: providing a silicon substrate and having the process for shallow trench isolation; then, forming a gate oxide layer and the polycrystalline silicon layer; proceeding the contact etching on the polycrystalline silicon layer. The metal plugs are implanted with the polycrystalline and etched the wolfram layer window and wolfram silicide layer using the chemical vapor deposition. At last, by the photolithography and etching process to define the source/drain patter for ion implantation, by the annealing process to connect the surface of source/drain and the plugs.
TW086106776A1997-05-211997-05-21Manufacturing method for semiconductor component structure
TW362272B
(en)
Method of fabricating metal contact of ultra-large-scale integration metal-oxide semiconductor field effect transistor with silicon-on-insulator structure