TW359018B - Dielectric composition and integrated circuit device - Google Patents
Dielectric composition and integrated circuit deviceInfo
- Publication number
- TW359018B TW359018B TW086115871A TW86115871A TW359018B TW 359018 B TW359018 B TW 359018B TW 086115871 A TW086115871 A TW 086115871A TW 86115871 A TW86115871 A TW 86115871A TW 359018 B TW359018 B TW 359018B
- Authority
- TW
- Taiwan
- Prior art keywords
- integrated circuit
- circuit device
- dielectric composition
- substrate
- compound
- Prior art date
Links
- 125000000217 alkyl group Chemical group 0.000 abstract 2
- 239000003989 dielectric material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 150000002148 esters Chemical class 0.000 abstract 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73913596A | 1996-10-28 | 1996-10-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW359018B true TW359018B (en) | 1999-05-21 |
Family
ID=24970981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086115871A TW359018B (en) | 1996-10-28 | 1997-11-22 | Dielectric composition and integrated circuit device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH10135199A (zh) |
KR (1) | KR19980032200A (zh) |
SG (1) | SG55379A1 (zh) |
TW (1) | TW359018B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4998040B2 (ja) * | 2007-03-27 | 2012-08-15 | Jsr株式会社 | ポリアミック酸のイミド化重合体絶縁膜および膜形成組成物とその製造方法 |
JPWO2022162895A1 (zh) * | 2021-01-29 | 2022-08-04 |
-
1997
- 1997-06-30 KR KR1019970029755A patent/KR19980032200A/ko not_active Application Discontinuation
- 1997-09-20 SG SG1997003477A patent/SG55379A1/en unknown
- 1997-09-24 JP JP9258163A patent/JPH10135199A/ja active Pending
- 1997-11-22 TW TW086115871A patent/TW359018B/zh active
Also Published As
Publication number | Publication date |
---|---|
SG55379A1 (en) | 1998-12-21 |
JPH10135199A (ja) | 1998-05-22 |
KR19980032200A (ko) | 1998-07-25 |
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