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Application filed by Taiwan Semiconductor Mfg Co LtdfiledCriticalTaiwan Semiconductor Mfg Co Ltd
Priority to TW085104768ApriorityCriticalpatent/TW358996B/en
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Publication of TW358996BpublicationCriticalpatent/TW358996B/en
A particle monitor method for IC plasma etching chamber, including the following: placing the semiconductor wafer in the cathode of the etching chamber; feeding reaction gas into said etching chamber for some time; while dipping said semiconductor wafer in said reaction gas, with movement of anode of said etching chamber to change the electrode gap; removal of said semiconductor wafer dipped in said reaction gas from said etching chamber.
TW085104768A1996-04-221996-04-22Particle monitoring system in a semiconductor etching reaction chamber
TW358996B
(en)