TW358876B - InAs/GaSb super lattice structure infrared detector fabricated by organometallic vapor phase epitaxy - Google Patents

InAs/GaSb super lattice structure infrared detector fabricated by organometallic vapor phase epitaxy

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Publication number
TW358876B
TW358876B TW086101819A TW86101819A TW358876B TW 358876 B TW358876 B TW 358876B TW 086101819 A TW086101819 A TW 086101819A TW 86101819 A TW86101819 A TW 86101819A TW 358876 B TW358876 B TW 358876B
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TW
Taiwan
Prior art keywords
inas
super lattice
lattice structure
vapor phase
infrared detector
Prior art date
Application number
TW086101819A
Other languages
Chinese (zh)
Inventor
Shou-Jin Jang
Shi-Ming Chen
Chuing-Liang Lin
Yan-Kuin Su
Original Assignee
Nat Science Council
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Publication date
Application filed by Nat Science Council filed Critical Nat Science Council
Priority to TW086101819A priority Critical patent/TW358876B/en
Application granted granted Critical
Publication of TW358876B publication Critical patent/TW358876B/en

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  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

A sort of InAs/GaSb super lattice structure infrared detector fabricated by organometallic vapor phase epitaxy, where the GaSb super lattice structure 5/3 ratio is 28.7 and InAs 5/3 ratio is 78.5; in the super lattice process with exchange of different materials, As or organic Sb is used to fill the growth chamber, for controlling the volatilization of crystalline elements in 5 seconds.
TW086101819A 1997-02-17 1997-02-17 InAs/GaSb super lattice structure infrared detector fabricated by organometallic vapor phase epitaxy TW358876B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086101819A TW358876B (en) 1997-02-17 1997-02-17 InAs/GaSb super lattice structure infrared detector fabricated by organometallic vapor phase epitaxy

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086101819A TW358876B (en) 1997-02-17 1997-02-17 InAs/GaSb super lattice structure infrared detector fabricated by organometallic vapor phase epitaxy

Publications (1)

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TW358876B true TW358876B (en) 1999-05-21

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW086101819A TW358876B (en) 1997-02-17 1997-02-17 InAs/GaSb super lattice structure infrared detector fabricated by organometallic vapor phase epitaxy

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2623832C1 (en) * 2016-04-27 2017-06-29 Федеральное государственное бюджетное учреждение науки Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук (НТЦ микроэлектроники РАН) Method of obtaining antimonide gallium with a large specific electrical resistance
CN107393982A (en) * 2017-07-12 2017-11-24 秦皇岛博硕光电设备股份有限公司 Improve method and the class superlattices of indium arsenic/gallium antimony II and its application of indium arsenic/gallium antimony superlattices infrared detector material cutoff wavelength

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2623832C1 (en) * 2016-04-27 2017-06-29 Федеральное государственное бюджетное учреждение науки Научно-технологический центр микроэлектроники и субмикронных гетероструктур Российской академии наук (НТЦ микроэлектроники РАН) Method of obtaining antimonide gallium with a large specific electrical resistance
CN107393982A (en) * 2017-07-12 2017-11-24 秦皇岛博硕光电设备股份有限公司 Improve method and the class superlattices of indium arsenic/gallium antimony II and its application of indium arsenic/gallium antimony superlattices infrared detector material cutoff wavelength
CN107393982B (en) * 2017-07-12 2023-06-27 秦皇岛博硕光电设备股份有限公司 Method for improving cut-off wavelength of InAs/GaSb superlattice infrared detector material and InAs/GaSb type II superlattice and application thereof

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