TW354414B - A fixture of a semiconductor part, a platform for a semiconductor part and a joint device - Google Patents
A fixture of a semiconductor part, a platform for a semiconductor part and a joint deviceInfo
- Publication number
- TW354414B TW354414B TW086109779A TW86109779A TW354414B TW 354414 B TW354414 B TW 354414B TW 086109779 A TW086109779 A TW 086109779A TW 86109779 A TW86109779 A TW 86109779A TW 354414 B TW354414 B TW 354414B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor part
- fixture
- platform
- joint device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052804 chromium Inorganic materials 0.000 abstract 1
- 239000011651 chromium Substances 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78703—Mechanical holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
Abstract
A fixture of a semiconductor part, characterized in that: forming am enclosing layer on the metal material surface primary formed by oxide chromium.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8178123A JP2883582B2 (en) | 1996-07-08 | 1996-07-08 | Receiving pedestal and bonding device for mounting semiconductor components |
JP18218396A JP2877761B2 (en) | 1996-07-11 | 1996-07-11 | Semiconductor component fixing jig |
Publications (1)
Publication Number | Publication Date |
---|---|
TW354414B true TW354414B (en) | 1999-03-11 |
Family
ID=26498407
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086109779A TW354414B (en) | 1996-07-08 | 1997-07-08 | A fixture of a semiconductor part, a platform for a semiconductor part and a joint device |
Country Status (3)
Country | Link |
---|---|
KR (1) | KR100324857B1 (en) |
TW (1) | TW354414B (en) |
WO (1) | WO1998001902A1 (en) |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1929A (en) * | 1841-01-09 | John wilder | ||
JPS57154848A (en) * | 1981-03-20 | 1982-09-24 | Hitachi Ltd | Assembling device for semiconductor |
US4764341A (en) * | 1987-04-27 | 1988-08-16 | International Business Machines Corporation | Bonding of pure metal films to ceramics |
JPH0610684Y2 (en) * | 1989-09-19 | 1994-03-16 | 株式会社カイジョー | Bonding device |
JPH0446544U (en) * | 1990-08-21 | 1992-04-21 |
-
1997
- 1997-07-04 WO PCT/JP1997/002335 patent/WO1998001902A1/en active IP Right Grant
- 1997-07-04 KR KR1019970709930A patent/KR100324857B1/en not_active IP Right Cessation
- 1997-07-08 TW TW086109779A patent/TW354414B/en active
Also Published As
Publication number | Publication date |
---|---|
KR100324857B1 (en) | 2002-07-06 |
WO1998001902A1 (en) | 1998-01-15 |
KR19990028608A (en) | 1999-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0623956A3 (en) | A semiconductor device having no die supporting surface and method for making the same. | |
EP0623953A3 (en) | Flagless semiconductor device and method for making the same. | |
SG72825A1 (en) | Semiconductor device and method for the fabrication thereof | |
EP0680078A3 (en) | Semiconductor substrate surface treatment. | |
MY125467A (en) | Olanzapine dihydrate d | |
EP0685878A3 (en) | Semiconductor package and method of forming the same. | |
EP0660391A3 (en) | Semiconductor device with a trench isolation region and method of manufacturing the same. | |
DE69525406T2 (en) | Semiconductor device with metal plate | |
EP0606093A3 (en) | Semiconductor optical integrated circuits and method for fabricating the same. | |
EP0658933A3 (en) | Semiconductor devices and method for manufacturing the same. | |
AU4726397A (en) | Semiconductor device and method for manufacturing the same | |
EP0659895A3 (en) | Internal combustion valve having an iron based hard-facing alloy contact surface. | |
EP0723294A3 (en) | Semiconductor device having a bond pad and a process for forming the device | |
EP1014453A4 (en) | Semiconductor device and method for manufacturing the same | |
EP0673069A3 (en) | Insulated gate semiconductor device and method for fabricating the same. | |
EP1009035A4 (en) | Insulated gate semiconductor device and method for manufacturing the same | |
KR100209345B1 (en) | A semiconductor device and a method of manufacturing the same. | |
ITBS930075A0 (en) | COMPOSITE BODY FOR TAPS | |
SG74643A1 (en) | Semiconductor device and method for fabricating the same | |
EP0619602A3 (en) | Semiconductor device and method for manufacturing semiconductor device. | |
EP0674368A3 (en) | Semiconductor laser devices. | |
EP0660472A3 (en) | Semiconductor laser device. | |
EP0632499A3 (en) | Substrate for semiconductor device. | |
MY125450A (en) | Roofing material | |
EP0669685A3 (en) | Group II-VI semiconductor laser and method for the manufacture thereof. |