TW353194B - Coated deposition chamber equipment - Google Patents

Coated deposition chamber equipment

Info

Publication number
TW353194B
TW353194B TW086117659A TW86117659A TW353194B TW 353194 B TW353194 B TW 353194B TW 086117659 A TW086117659 A TW 086117659A TW 86117659 A TW86117659 A TW 86117659A TW 353194 B TW353194 B TW 353194B
Authority
TW
Taiwan
Prior art keywords
deposition chamber
expansion
thermal coefficient
chamber equipment
coating
Prior art date
Application number
TW086117659A
Other languages
English (en)
Inventor
Peijun Ding
Gongda Yao
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW353194B publication Critical patent/TW353194B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32504—Means for preventing sputtering of the vessel
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
TW086117659A 1996-11-26 1997-11-25 Coated deposition chamber equipment TW353194B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75646896A 1996-11-26 1996-11-26

Publications (1)

Publication Number Publication Date
TW353194B true TW353194B (en) 1999-02-21

Family

ID=25043623

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086117659A TW353194B (en) 1996-11-26 1997-11-25 Coated deposition chamber equipment

Country Status (4)

Country Link
EP (1) EP0845545A1 (zh)
JP (1) JPH10229058A (zh)
SG (1) SG54602A1 (zh)
TW (1) TW353194B (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451181B1 (en) * 1999-03-02 2002-09-17 Motorola, Inc. Method of forming a semiconductor device barrier layer
KR100351984B1 (ko) * 1999-12-29 2002-09-12 주식회사 하이닉스반도체 화학기상증착장비의 이물감소방법
US6805952B2 (en) * 2000-12-29 2004-10-19 Lam Research Corporation Low contamination plasma chamber components and methods for making the same
US7128804B2 (en) * 2000-12-29 2006-10-31 Lam Research Corporation Corrosion resistant component of semiconductor processing equipment and method of manufacture thereof
US6777045B2 (en) * 2001-06-27 2004-08-17 Applied Materials Inc. Chamber components having textured surfaces and method of manufacture
US7026009B2 (en) * 2002-03-27 2006-04-11 Applied Materials, Inc. Evaluation of chamber components having textured coatings
US7964085B1 (en) 2002-11-25 2011-06-21 Applied Materials, Inc. Electrochemical removal of tantalum-containing materials
US7910218B2 (en) 2003-10-22 2011-03-22 Applied Materials, Inc. Cleaning and refurbishing chamber components having metal coatings
DE102004035335A1 (de) * 2004-07-21 2006-02-16 Schott Ag Reinraumfähige Beschichtungsanlage
US7579067B2 (en) 2004-11-24 2009-08-25 Applied Materials, Inc. Process chamber component with layered coating and method
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US7762114B2 (en) 2005-09-09 2010-07-27 Applied Materials, Inc. Flow-formed chamber component having a textured surface
CN100459032C (zh) * 2006-09-30 2009-02-04 中芯国际集成电路制造(上海)有限公司 减少反应室颗粒的工艺方法
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
TWI424083B (zh) * 2011-08-26 2014-01-21 Particle screening device
KR101790394B1 (ko) * 2014-06-11 2017-10-26 (주)코미코 박막 증착 장치용 내부재 및 이의 제조 방법
WO2015190752A1 (ko) * 2014-06-11 2015-12-17 (주) 코미코 박막 증착 장치용 내부재 및 이의 제조 방법
US10668511B2 (en) * 2018-03-20 2020-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method of cleaning process chamber

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0401035B1 (en) * 1989-06-02 1996-09-11 Kabushiki Kaisha Toshiba Film forming apparatus and film forming method
US5135629A (en) * 1989-06-12 1992-08-04 Nippon Mining Co., Ltd. Thin film deposition system
US5391275A (en) * 1990-03-02 1995-02-21 Applied Materials, Inc. Method for preparing a shield to reduce particles in a physical vapor deposition chamber
US5482612A (en) * 1992-10-27 1996-01-09 Texas Instruments Incorporated Methods and systems for shielding in sputtering chambers
US5527438A (en) * 1994-12-16 1996-06-18 Applied Materials, Inc. Cylindrical sputtering shield

Also Published As

Publication number Publication date
SG54602A1 (en) 1998-11-16
JPH10229058A (ja) 1998-08-25
EP0845545A1 (en) 1998-06-03

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