TW350107B - Thermal processing method for silicon wafers - Google Patents
Thermal processing method for silicon wafersInfo
- Publication number
- TW350107B TW350107B TW085115123A TW85115123A TW350107B TW 350107 B TW350107 B TW 350107B TW 085115123 A TW085115123 A TW 085115123A TW 85115123 A TW85115123 A TW 85115123A TW 350107 B TW350107 B TW 350107B
- Authority
- TW
- Taiwan
- Prior art keywords
- silicon wafers
- thermal processing
- processing method
- gas
- hydrogen
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 229910052710 silicon Inorganic materials 0.000 title abstract 3
- 239000010703 silicon Substances 0.000 title abstract 3
- 235000012431 wafers Nutrition 0.000 title abstract 3
- 238000003672 processing method Methods 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 3
- 239000001257 hydrogen Substances 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 150000002431 hydrogen Chemical class 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
Landscapes
- Formation Of Insulating Films (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6164096A JPH09232325A (ja) | 1996-02-26 | 1996-02-26 | シリコンウェーハの熱処理方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW350107B true TW350107B (en) | 1999-01-11 |
Family
ID=13177020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085115123A TW350107B (en) | 1996-02-26 | 1996-12-06 | Thermal processing method for silicon wafers |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH09232325A (zh) |
| TW (1) | TW350107B (zh) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5052728B2 (ja) * | 2002-03-05 | 2012-10-17 | 株式会社Sumco | シリコン単結晶層の製造方法 |
| JP2004087960A (ja) | 2002-08-28 | 2004-03-18 | Fujitsu Ltd | 半導体装置の製造方法 |
| KR100826782B1 (ko) * | 2002-10-28 | 2008-04-30 | 동부일렉트로닉스 주식회사 | 실리콘 웨이퍼 제조 방법 |
| WO2021079779A1 (ja) * | 2019-10-23 | 2021-04-29 | 東京エレクトロン株式会社 | 基板洗浄方法、および基板洗浄装置 |
-
1996
- 1996-02-26 JP JP6164096A patent/JPH09232325A/ja active Pending
- 1996-12-06 TW TW085115123A patent/TW350107B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09232325A (ja) | 1997-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW344858B (en) | Highly integrated and reliable DRAM and its manufacture | |
| TW350102B (en) | Semiconductor device manufacturing method | |
| TW353215B (en) | Novel shallow trench isolation technique | |
| EP1067585A3 (en) | Method and a system for sealing an epitaxial silicon layer on a substrate | |
| TW376545B (en) | Method of producing silicon layer having surface controlling to be even | |
| TW430866B (en) | Thermal treatment apparatus | |
| TW371789B (en) | Method for fabricating a semiconductor device | |
| TW343375B (en) | Low dielectric constant silicon dioxide sandwich layer | |
| EP1722403A3 (en) | Fabrication method for a thin film smiconductor device | |
| TW344897B (en) | A process for forming gate oxides possessing different thicknesses on a semiconductor substrate | |
| SG85120A1 (en) | A composition and method for selectively etching a silicon nitride film | |
| GB2346898A (en) | Deposition of a siloxane containing polymer | |
| EP1113489A3 (en) | Film forming method and semiconductor device | |
| TW344863B (en) | Method for etching metal silicide with high selectivity to polysilicon | |
| EP0777265A3 (en) | Method and device for dissolving surface layer of semiconductor substrate | |
| TW331017B (en) | Manufacturing and checking method of semiconductor substrate | |
| WO2001045501A3 (en) | GROWTH OF ULTRATHIN NITRIDE ON Si(100) BY RAPID THERMAL N2 TREATMENT | |
| TW333671B (en) | The semiconductor device and its producing method | |
| TW326551B (en) | The manufacturing method for Ti-salicide in IC | |
| TW200504937A (en) | Method for fabricating semiconductor device and semiconductor substrate | |
| TW350107B (en) | Thermal processing method for silicon wafers | |
| EP0173610A3 (en) | An improved method for controlling lateral diffusion of silicon in a self-aligned tisi2 process | |
| EP0887846A3 (en) | Method of reducing the formation of watermarks on semiconductor wafers | |
| EP1113485A3 (en) | Method for producing a semiconductor device | |
| TW357405B (en) | Method for pre-shaping a semiconductor substrate for polishing and structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |