TW350107B - Thermal processing method for silicon wafers - Google Patents

Thermal processing method for silicon wafers

Info

Publication number
TW350107B
TW350107B TW085115123A TW85115123A TW350107B TW 350107 B TW350107 B TW 350107B TW 085115123 A TW085115123 A TW 085115123A TW 85115123 A TW85115123 A TW 85115123A TW 350107 B TW350107 B TW 350107B
Authority
TW
Taiwan
Prior art keywords
silicon wafers
thermal processing
processing method
gas
hydrogen
Prior art date
Application number
TW085115123A
Other languages
English (en)
Inventor
Atsushi Sato
Shiro Yoshino
Hisami Motoura
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Application granted granted Critical
Publication of TW350107B publication Critical patent/TW350107B/zh

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW085115123A 1996-02-26 1996-12-06 Thermal processing method for silicon wafers TW350107B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6164096A JPH09232325A (ja) 1996-02-26 1996-02-26 シリコンウェーハの熱処理方法

Publications (1)

Publication Number Publication Date
TW350107B true TW350107B (en) 1999-01-11

Family

ID=13177020

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085115123A TW350107B (en) 1996-02-26 1996-12-06 Thermal processing method for silicon wafers

Country Status (2)

Country Link
JP (1) JPH09232325A (zh)
TW (1) TW350107B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5052728B2 (ja) * 2002-03-05 2012-10-17 株式会社Sumco シリコン単結晶層の製造方法
JP2004087960A (ja) 2002-08-28 2004-03-18 Fujitsu Ltd 半導体装置の製造方法
KR100826782B1 (ko) * 2002-10-28 2008-04-30 동부일렉트로닉스 주식회사 실리콘 웨이퍼 제조 방법
WO2021079779A1 (ja) * 2019-10-23 2021-04-29 東京エレクトロン株式会社 基板洗浄方法、および基板洗浄装置

Also Published As

Publication number Publication date
JPH09232325A (ja) 1997-09-05

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Legal Events

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MK4A Expiration of patent term of an invention patent