TW348285B - Method of fabricating semiconductor device - Google Patents

Method of fabricating semiconductor device

Info

Publication number
TW348285B
TW348285B TW085114846A TW85114846A TW348285B TW 348285 B TW348285 B TW 348285B TW 085114846 A TW085114846 A TW 085114846A TW 85114846 A TW85114846 A TW 85114846A TW 348285 B TW348285 B TW 348285B
Authority
TW
Taiwan
Prior art keywords
semiconductor device
fabricating semiconductor
tungsten silicide
fabricating
carrying
Prior art date
Application number
TW085114846A
Other languages
English (en)
Chinese (zh)
Inventor
Moom Hong-Bae
Ku Bon-Youl
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW348285B publication Critical patent/TW348285B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW085114846A 1996-06-27 1996-12-02 Method of fabricating semiconductor device TW348285B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960024616A KR100219416B1 (ko) 1996-06-27 1996-06-27 반도체장치 제조방법

Publications (1)

Publication Number Publication Date
TW348285B true TW348285B (en) 1998-12-21

Family

ID=19463951

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085114846A TW348285B (en) 1996-06-27 1996-12-02 Method of fabricating semiconductor device

Country Status (3)

Country Link
JP (1) JP3121777B2 (ko)
KR (1) KR100219416B1 (ko)
TW (1) TW348285B (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100482751B1 (ko) 2002-12-27 2005-04-14 주식회사 하이닉스반도체 반도체 소자의 제조 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63227060A (ja) * 1987-03-17 1988-09-21 Fujitsu Ltd 半導体装置の製造方法
JPS6442175A (en) * 1987-08-07 1989-02-14 Fujitsu Ltd Manufacture of semiconductor device
JPH047826A (ja) * 1990-04-25 1992-01-13 Fuji Xerox Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
KR100219416B1 (ko) 1999-09-01
JPH1050704A (ja) 1998-02-20
KR980005556A (ko) 1998-03-30
JP3121777B2 (ja) 2001-01-09

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees