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A process for producing a semiconductor mirror wafer, which comprises: performing a first mirror polishing on both faces of the wafer; performing a back face low glow polishing on one face of the both faces which have undergone the first mirror polishing; and performing a surface processing mirror polishing on the remaining face of the semiconductor wafer which has undergone the first mirror polishing; which is characterized in that: the polishing agent used in the back face low glow polishing mainly comprises silicon dioxide as the main component, and a polyolefin fine powder material.
TW085112441A1996-12-161996-10-11Process for producing semiconductor mirror wafer
TW348092B
(en)