TW346648B - Method for improving low dielectric constant material in chemical-mechanical polishing - Google Patents
Method for improving low dielectric constant material in chemical-mechanical polishingInfo
- Publication number
- TW346648B TW346648B TW086111574A TW86111574A TW346648B TW 346648 B TW346648 B TW 346648B TW 086111574 A TW086111574 A TW 086111574A TW 86111574 A TW86111574 A TW 86111574A TW 346648 B TW346648 B TW 346648B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric constant
- low dielectric
- constant material
- formation
- chemical
- Prior art date
Links
Landscapes
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
A method for improving a low dielectric constant material in chemical-mechanical polishing (CMP), which uses an oxygen plasma processing technique of metal dielectric layer process in a semiconductor, the method for improving a low dielectric constant material comprising: (a) converting a majority of R radicals into Si-O bonds by using the oxygen plasma processing technique, enabling the film surface for easy formation of hydroxy radicals and diffusion of water molecules; (b) generating chemical diffusion and reactions in the polishing solution due to the formation of hydroxy radicals, such that the polishing liquid particles and polishing material can be removed easily; (c) forming Si-O-Si bonds by releasing a water molecule thereby causing the diffusion of water molecules and the formation of hydroxy radicals; by the above continuous formation, reducing the carbon content in the material, thereby changing the low dielectric constant film, improving the removal rate of CMP in the low dielectric constant material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW086111574A TW346648B (en) | 1997-08-06 | 1997-08-06 | Method for improving low dielectric constant material in chemical-mechanical polishing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW086111574A TW346648B (en) | 1997-08-06 | 1997-08-06 | Method for improving low dielectric constant material in chemical-mechanical polishing |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW346648B true TW346648B (en) | 1998-12-01 |
Family
ID=58263917
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW086111574A TW346648B (en) | 1997-08-06 | 1997-08-06 | Method for improving low dielectric constant material in chemical-mechanical polishing |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW346648B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8637403B2 (en) | 2011-12-12 | 2014-01-28 | International Business Machines Corporation | Locally tailoring chemical mechanical polishing (CMP) polish rate for dielectrics |
| US10586801B2 (en) | 2018-01-12 | 2020-03-10 | Intel Corporation | Flash memory cells |
-
1997
- 1997-08-06 TW TW086111574A patent/TW346648B/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8637403B2 (en) | 2011-12-12 | 2014-01-28 | International Business Machines Corporation | Locally tailoring chemical mechanical polishing (CMP) polish rate for dielectrics |
| US10586801B2 (en) | 2018-01-12 | 2020-03-10 | Intel Corporation | Flash memory cells |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Lu et al. | The influence of concentration of hydroxyl radical on the chemical mechanical polishing of SiC wafer based on the Fenton reaction | |
| SG142143A1 (en) | Abrading plate and polishing method using the same | |
| TW324834B (en) | Method for forming membrane | |
| SG166005A1 (en) | Substrate processing apparatus and substrate processing method | |
| EP1369904A3 (en) | Apparatus for liquid treatment of wafers | |
| MY118463A (en) | Two stage reactor for continuos three phase slurry hydrogenation and method of operation. | |
| WO2002101798A3 (en) | Method of applying liquid to a megasonic apparatus for improved cleaning control | |
| AU5373998A (en) | Chemical mechanical polishing copper substrates | |
| WO2003023825A3 (en) | Substrate processing apparatus | |
| KR950027986A (en) | Manufacturing method and apparatus for semiconductor device | |
| JP2006527067A5 (en) | ||
| EP1146064A3 (en) | Continuous hydrosilylation method for production of modified liquid organosilicon compound | |
| Bastawros et al. | Atmospheric pressure plasma enabled polishing of single crystal sapphire | |
| Yang et al. | Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface | |
| TW200706306A (en) | System and methods for polishing a wafer | |
| AU2003263399A8 (en) | Rising after chemical-mechanical planarization process applied on a wafer | |
| TW516119B (en) | Chemical mechanical planarization of metal substrates | |
| Uneda et al. | Highly efficient chemical mechanical polishing method for SiC substrates using enhanced slurry containing bubbles of ozone gas | |
| EP1039523A3 (en) | Method and apparatus for forming an interlayer insulating film, and semiconductor device | |
| US20070131254A1 (en) | Washing apparatus with bubbling reaction and a washing method of using bubbling reaction | |
| TW346648B (en) | Method for improving low dielectric constant material in chemical-mechanical polishing | |
| MY115584A (en) | A wafer carrier assembly for chem-mech polishing | |
| TW200732507A (en) | Apparatus and method for agitating liquids in wet chemical processing of microfeature workpieces | |
| MY132494A (en) | Polishing apparatus and polishing method for silicon wafers | |
| Xu et al. | Auxiliary mechanism of in-situ micro-nano bubbles in oxide chemical mechanical polishing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |