TW341604B - Device and method for manufacturing semiconductor-crystal - Google Patents

Device and method for manufacturing semiconductor-crystal

Info

Publication number
TW341604B
TW341604B TW085108350A TW85108350A TW341604B TW 341604 B TW341604 B TW 341604B TW 085108350 A TW085108350 A TW 085108350A TW 85108350 A TW85108350 A TW 85108350A TW 341604 B TW341604 B TW 341604B
Authority
TW
Taiwan
Prior art keywords
shielded
cylinder
crystal
manufacturing semiconductor
cylinders
Prior art date
Application number
TW085108350A
Other languages
Chinese (zh)
Inventor
Yoshiyuki Shimanuki
Toshimichi Kubota
Toshiro Kotooka
Makoto Kamogawa
Original Assignee
Komatsu Denshi Kinzoku Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Komatsu Denshi Kinzoku Kk filed Critical Komatsu Denshi Kinzoku Kk
Application granted granted Critical
Publication of TW341604B publication Critical patent/TW341604B/en

Links

Abstract

A device for manufacturing semiconductor-crystal by the CZ method, which comprises a shielded-cylinder surrounding the semiconductor single-crystal silicon; which is characterized in that: the shielded-cylinder is divided into a plurality of shielded-cylinders in which the shielded-cylinders are a shrinkable type, and the wire of the wrap-up reel is disposed on the inner side of the shielded-cylinder, and the outside of the shielded-cylinder is installed with a lift bar; the shielded-cylinder performs elevation by the upward-and-downward movement of the elevated-lever.
TW085108350A 1996-05-29 1996-07-10 Device and method for manufacturing semiconductor-crystal TW341604B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15751096A JPH09315882A (en) 1996-05-29 1996-05-29 Device for producing semiconductor single crystal and production of semiconductor single crystal therewith

Publications (1)

Publication Number Publication Date
TW341604B true TW341604B (en) 1998-10-01

Family

ID=15651263

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085108350A TW341604B (en) 1996-05-29 1996-07-10 Device and method for manufacturing semiconductor-crystal

Country Status (2)

Country Link
JP (1) JPH09315882A (en)
TW (1) TW341604B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942032A (en) * 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
US6557618B1 (en) 1997-09-12 2003-05-06 General Electric Company Apparatus and method for producing castings with directional and single crystal structure and the article according to the method
RU2116867C1 (en) * 1997-09-12 1998-08-10 Всероссийский научно-исследовательский институт авиационных материалов Device for production of unidirectional and single crystal ingots
JP3428626B2 (en) * 1998-06-25 2003-07-22 三菱住友シリコン株式会社 Apparatus and method for pulling silicon single crystal
TW505710B (en) * 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
JP2007112663A (en) * 2005-10-20 2007-05-10 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Apparatus and method for manufacturing semiconductor single crystal
JP2008162809A (en) * 2006-12-26 2008-07-17 Covalent Materials Corp Single crystal pulling apparatus and method for manufacturing single crystal
JP5262346B2 (en) * 2008-06-27 2013-08-14 株式会社Ｓｕｍｃｏ Method for producing silicon single crystal
US9074298B2 (en) 2008-08-18 2015-07-07 Sumco Techxiv Corporation Processes for production of silicon ingot, silicon wafer and epitaxial wafer, and silicon ingot
JP2009001489A (en) * 2008-08-28 2009-01-08 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Apparatus and method for producing single crystal
JP5519211B2 (en) * 2009-08-10 2014-06-11 オリンパス株式会社 Endoscope device
KR101532265B1 (en) 2013-12-03 2015-06-29 주식회사 엘지실트론 An apparatus for grpwing a single crystal
JP7056173B2 (en) * 2018-01-26 2022-04-19 住友金属鉱山株式会社 Crystal growth device
KR102355248B1 (en) * 2020-03-09 2022-01-26 에스케이실트론 주식회사 Apparatus and method for growing silicon single crystal ingot
CN114613555B (en) * 2022-03-09 2022-12-16 嘉兴奥氟特科技股份有限公司 Processing equipment and processing method for shielded cable

Also Published As

Publication number Publication date
JPH09315882A (en) 1997-12-09

Similar Documents

Publication Publication Date Title
TW341604B (en) Device and method for manufacturing semiconductor-crystal
GB2316226B (en) Epitaxial wafer for light-emitting device,method of forming the wafer and light-emitting device using the wafer
EP0438959A3 (en) Semiconductor device structure employing a multi-level epitaxial structure and a method of manufacturing same
EP0623956A3 (en) A semiconductor device having no die supporting surface and method for making the same.
GB2276493B (en) Semiconductor laser device array, semiconductor laser device and production method therefore
EP0660391A3 (en) Semiconductor device with a trench isolation region and method of manufacturing the same.
EP1114885A4 (en) CZ SINGLE CRYSTAL DOPED WITH Ga AND WAFER AND METHOD FOR PRODUCTION THEREOF
EP0948037A4 (en) Silicon epitaxial wafer and method for manufacturing the same
EP0711853A4 (en) Method for growing gallium nitride compound semiconductor crystal, and gallium nitride compound semiconductor device
EP0617456A3 (en) Low cost method of fabricating epitaxial semiconductor devices.
MY119169A (en) Method of slicing semiconductor single crystal ingot
EP0634788A3 (en) Method of manufacturing semiconductor device utilizing selective CVD method.
EP0742593A3 (en) Semiconductor device with multilevel structured insulator and fabrication method thereof
TW337040B (en) Method of doping trench sidewalls before trench etching
EP0673069A3 (en) Insulated gate semiconductor device and method for fabricating the same.
EP0643421A3 (en) Semiconductor device and associated fabrication method.
EP0604234A3 (en) Semiconductor device manufacturing method.
EP0430691A3 (en) Semiconductor heterostructures
SG48494A1 (en) Group iii-v compound semiconductor and light-emitting device
EP0663710A3 (en) Optical semiconductor device and method for producing the same.
EP0616371A3 (en) Silicon on insulator semiconductor device and its fabrication method.
EP0619602A3 (en) Semiconductor device and method for manufacturing semiconductor device.
EP0616370A3 (en) Semiconductor bipolar device including SiGe and method for manufacturing the same.
EP0131379A3 (en) Semiconductor device having a heterojunction, and method for producing it
EP0456485A3 (en) A semiconductor laser device, and a method for producing a compound semiconductor device including the semiconductor laser device