TW340877B - The method by using plasma chemical to envaporize diamond like carbon - Google Patents

The method by using plasma chemical to envaporize diamond like carbon

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Publication number
TW340877B
TW340877B TW086111514A TW86111514A TW340877B TW 340877 B TW340877 B TW 340877B TW 086111514 A TW086111514 A TW 086111514A TW 86111514 A TW86111514 A TW 86111514A TW 340877 B TW340877 B TW 340877B
Authority
TW
Taiwan
Prior art keywords
envaporized
article
carbon
reaction furnace
diamond
Prior art date
Application number
TW086111514A
Other languages
Chinese (zh)
Inventor
Tian-Tsair Lin
Yuh-Sen Yang
Ruey-Tyng Twu
Original Assignee
Metal Ind Res & Dev Ct
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Filing date
Publication date
Application filed by Metal Ind Res & Dev Ct filed Critical Metal Ind Res & Dev Ct
Priority to TW086111514A priority Critical patent/TW340877B/en
Application granted granted Critical
Publication of TW340877B publication Critical patent/TW340877B/en

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Abstract

A method by using plasma chemical to envaporize diamond like carbon (DLC) with high adhesion, its steps are as following:  Vacuum step, it is vacuum the reaction furnace that has placed envaporized article inside;  Heating step, it is heating the reaction furnace into setting temperature;  Diffusion step, it is by flowing N2 and H2 into reaction furnace to generate plasma nitridation diffusion reaction, to form nitride diffusion on surface of envaporized article;  The junction envaporized step, it is by flowing TiCl4, N2 and H2, to grow TiN on surface of envaporized article;  Transition envaporized step, it is by flowing CH4 into reaction furnace, to grow TiCN with well unity on TiN layer;  Bonding envaporized step, it stops to supply N2 into reaction furnace, to grow TiC with well adhesion on TiCN layer;  Forming diamond like carbon step, it is by cooling down envaporized article, which has envaporized nitride, TiN, TiCN and TiC layer, to 100℃ at H2 environment, then rising the temperature into 150℃, and flowing CH4 and H4, to form diamond like carbon on surface of envaporized article.
TW086111514A 1997-08-12 1997-08-12 The method by using plasma chemical to envaporize diamond like carbon TW340877B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086111514A TW340877B (en) 1997-08-12 1997-08-12 The method by using plasma chemical to envaporize diamond like carbon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086111514A TW340877B (en) 1997-08-12 1997-08-12 The method by using plasma chemical to envaporize diamond like carbon

Publications (1)

Publication Number Publication Date
TW340877B true TW340877B (en) 1998-09-21

Family

ID=58263461

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086111514A TW340877B (en) 1997-08-12 1997-08-12 The method by using plasma chemical to envaporize diamond like carbon

Country Status (1)

Country Link
TW (1) TW340877B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110218971A (en) * 2019-07-02 2019-09-10 重庆文理学院 A kind of nano-multilayer film and preparation method thereof suitable for titanium alloy surface

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110218971A (en) * 2019-07-02 2019-09-10 重庆文理学院 A kind of nano-multilayer film and preparation method thereof suitable for titanium alloy surface

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