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A manufacturing method for DRAM, it includes following steps: (1) Form electricity device and isolated field oxide on semiconductor substrate, that electricity device includes transistor, word line and bit line; (2) Serially form 1st dielectric, 2nd dielectric and 3rd dielectric layer, and use lithography and etching technology to form device contact window; (3) Form 1st polysilicon layer to fill device contact window and cover on surface of 3rd dielectric layer; (4) Define 1st polysilicon, and simultaneously form trenched 1st polysilicon structure, which is used as down electrode; (5) Form capacitor dielectric layer on surface of trench 1st polysilicon structure; (6) Form 2nd polysilicon on surface of capacitor dielectric as upper electrode of capacitor.
TW086112625A1997-09-021997-09-02The manufacturing method for IC trench capacitor
TW339467B
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