TW339453B - Photolithographic apparatus - Google Patents

Photolithographic apparatus

Info

Publication number
TW339453B
TW339453B TW086107149A TW86107149A TW339453B TW 339453 B TW339453 B TW 339453B TW 086107149 A TW086107149 A TW 086107149A TW 86107149 A TW86107149 A TW 86107149A TW 339453 B TW339453 B TW 339453B
Authority
TW
Taiwan
Prior art keywords
comprizing
optical system
illumination
illumination field
unit
Prior art date
Application number
TW086107149A
Other languages
English (en)
Inventor
Johannes Catharina Hub Mulkens
Den Brink Marinus Aart Van
Johannes Christiaan Mar Jasper
Original Assignee
Asm Lithography Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Lithography Bv filed Critical Asm Lithography Bv
Application granted granted Critical
Publication of TW339453B publication Critical patent/TW339453B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70116—Off-axis setting using a programmable means, e.g. liquid crystal display [LCD], digital micromirror device [DMD] or pupil facets
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70141—Illumination system adjustment, e.g. adjustments during exposure or alignment during assembly of illumination system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW086107149A 1996-04-10 1997-05-27 Photolithographic apparatus TW339453B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP96200936 1996-04-10

Publications (1)

Publication Number Publication Date
TW339453B true TW339453B (en) 1998-09-01

Family

ID=8223851

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086107149A TW339453B (en) 1996-04-10 1997-05-27 Photolithographic apparatus

Country Status (7)

Country Link
US (2) US6067146A (zh)
EP (1) EP0834100B1 (zh)
JP (1) JP4043519B2 (zh)
KR (1) KR100500768B1 (zh)
DE (1) DE69722552T2 (zh)
TW (1) TW339453B (zh)
WO (1) WO1997038356A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997038356A1 (en) * 1996-04-10 1997-10-16 Asm Lithography B.V. Photolithographic apparatus
JPH11271619A (ja) * 1998-03-19 1999-10-08 Nikon Corp 照明光学装置および該照明光学装置を備えた露光装置
US6445442B2 (en) * 1998-12-08 2002-09-03 Carl-Zeiss-Stiftung Projection-microlithographic device
US6392742B1 (en) * 1999-06-01 2002-05-21 Canon Kabushiki Kaisha Illumination system and projection exposure apparatus
US6396567B1 (en) * 1999-06-02 2002-05-28 Taiwan Semiconductor Manufacturing Company, Ltd Method and apparatus for controlling the dose of radiations applied to a semiconductor wafer during photolithography
TW498184B (en) * 1999-06-04 2002-08-11 Asm Lithography Bv Method of manufacturing a device using a lithographic projection apparatus, and device manufactured in accordance with said method
SG103303A1 (en) * 2000-07-07 2004-04-29 Nikon Corp Exposure apparatus, surface position adjustment unit, mask, and device manufacturing method
US20060087634A1 (en) * 2004-10-25 2006-04-27 Brown Jay M Dynamic illumination uniformity and shape control for lithography
US7433568B2 (en) 2005-03-31 2008-10-07 Semiconductor Energy Laboratory Co., Ltd. Optical element and light irradiation apparatus
US20070139630A1 (en) * 2005-12-19 2007-06-21 Nikon Precision, Inc. Changeable Slit to Control Uniformity of Illumination
US7659965B2 (en) * 2006-10-06 2010-02-09 Wafertech, Llc High throughput wafer stage design for optical lithography exposure apparatus

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3832029A (en) * 1972-10-17 1974-08-27 Xerox Corp Self-imaging with an optical tunnel for image formation
US4474463A (en) * 1982-08-30 1984-10-02 Tre Semiconductor Equipment Corporation Mixer coupling lens subassembly for photolithographic system
US4918583A (en) * 1988-04-25 1990-04-17 Nikon Corporation Illuminating optical device
US5223693A (en) * 1990-04-28 1993-06-29 Mitsubishi Denki Kabushiki Kaisha Optical machining apparatus
US5473410A (en) * 1990-11-28 1995-12-05 Nikon Corporation Projection exposure apparatus
US5309198A (en) * 1992-02-25 1994-05-03 Nikon Corporation Light exposure system
US5854671A (en) * 1993-05-28 1998-12-29 Nikon Corporation Scanning exposure method and apparatus therefor and a projection exposure apparatus and method which selectively chooses between static exposure and scanning exposure
EP0658811B1 (de) * 1993-12-13 1998-06-17 Carl Zeiss Beleuchtungseinrichtung für eine Projektions-Mikrolithographie-Belichtungsanlage
EP0687956B2 (de) * 1994-06-17 2005-11-23 Carl Zeiss SMT AG Beleuchtungseinrichtung
US5715040A (en) * 1995-10-12 1998-02-03 Kabushiki Kaisha Toshiba Illumination aperture of low intensity loss
WO1997038356A1 (en) * 1996-04-10 1997-10-16 Asm Lithography B.V. Photolithographic apparatus

Also Published As

Publication number Publication date
EP0834100A1 (en) 1998-04-08
DE69722552T2 (de) 2004-04-22
JPH11508092A (ja) 1999-07-13
US6239862B1 (en) 2001-05-29
DE69722552D1 (en) 2003-07-10
EP0834100B1 (en) 2003-06-04
US6067146A (en) 2000-05-23
WO1997038356A1 (en) 1997-10-16
KR100500768B1 (ko) 2006-01-12
JP4043519B2 (ja) 2008-02-06
KR19990022785A (ko) 1999-03-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees