TW337582B - Split-gate type transistor - Google Patents

Split-gate type transistor

Info

Publication number
TW337582B
TW337582B TW086103420A TW86103420A TW337582B TW 337582 B TW337582 B TW 337582B TW 086103420 A TW086103420 A TW 086103420A TW 86103420 A TW86103420 A TW 86103420A TW 337582 B TW337582 B TW 337582B
Authority
TW
Taiwan
Prior art keywords
split
type transistor
gate type
formation
lateral wall
Prior art date
Application number
TW086103420A
Other languages
Chinese (zh)
Inventor
Kazumi Kurooka
Kenji Fukase
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Application granted granted Critical
Publication of TW337582B publication Critical patent/TW337582B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

The manufacturing method of a split-gate type transistor comprising the following steps: formation on top of the semi conductor base board a float gate electrode including at least 1 lateral wall; and the step of formation of nitrogen atom cap of at least 1 nitrified lateral wall as given above.
TW086103420A 1996-03-29 1997-03-19 Split-gate type transistor TW337582B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7714596 1996-03-29

Publications (1)

Publication Number Publication Date
TW337582B true TW337582B (en) 1998-08-01

Family

ID=58263213

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103420A TW337582B (en) 1996-03-29 1997-03-19 Split-gate type transistor

Country Status (2)

Country Link
KR (1) KR100453137B1 (en)
TW (1) TW337582B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100444149B1 (en) 2000-07-22 2004-08-09 주식회사 아이피에스 ALD thin film depositin equipment cleaning method
KR100970255B1 (en) * 2007-04-09 2010-07-16 삼성전자주식회사 Method of manufacturing Semiconductor memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3236706B2 (en) * 1993-07-30 2001-12-10 三菱電機株式会社 Nonvolatile semiconductor memory device and method of manufacturing the same
JP2994938B2 (en) * 1993-12-28 1999-12-27 三洋電機株式会社 Manufacturing method of nonvolatile semiconductor memory device

Also Published As

Publication number Publication date
KR970067905A (en) 1997-10-13
KR100453137B1 (en) 2005-05-18

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees