TW335532B - An isolation method for memory cell and periphery circuit substrate - Google Patents

An isolation method for memory cell and periphery circuit substrate

Info

Publication number
TW335532B
TW335532B TW086112863A TW86112863A TW335532B TW 335532 B TW335532 B TW 335532B TW 086112863 A TW086112863 A TW 086112863A TW 86112863 A TW86112863 A TW 86112863A TW 335532 B TW335532 B TW 335532B
Authority
TW
Taiwan
Prior art keywords
memory cell
circuit substrate
isolation method
periphery circuit
drive
Prior art date
Application number
TW086112863A
Other languages
English (en)
Inventor
Huey-Jong Wu
Jyh-Yau Hwang
Cherng-Tsong Ni
Lih-Chyun Hwang
Original Assignee
Mos Electronics Taiwan Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mos Electronics Taiwan Inc filed Critical Mos Electronics Taiwan Inc
Priority to TW086112863A priority Critical patent/TW335532B/zh
Application granted granted Critical
Publication of TW335532B publication Critical patent/TW335532B/zh

Links

Landscapes

  • Semiconductor Memories (AREA)
TW086112863A 1997-09-05 1997-09-05 An isolation method for memory cell and periphery circuit substrate TW335532B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW086112863A TW335532B (en) 1997-09-05 1997-09-05 An isolation method for memory cell and periphery circuit substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086112863A TW335532B (en) 1997-09-05 1997-09-05 An isolation method for memory cell and periphery circuit substrate

Publications (1)

Publication Number Publication Date
TW335532B true TW335532B (en) 1998-07-01

Family

ID=58263072

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086112863A TW335532B (en) 1997-09-05 1997-09-05 An isolation method for memory cell and periphery circuit substrate

Country Status (1)

Country Link
TW (1) TW335532B (zh)

Similar Documents

Publication Publication Date Title
SE9403609D0 (sv) Förfarande för framställning av tunnfilmssolceller
EP0316165A3 (en) A method of trench isolation
TW366604B (en) Semiconductor cells and structure having these semiconductor cells
TW357265B (en) Probe card and method of forming the same
TW358992B (en) Semiconductor device and method of fabricating the same
TW429599B (en) Method for forming inductors on the semiconductor substrate
TW335554B (en) Semiconductor component with compensation implantation and method for production
AU8692298A (en) Method for preventing sub-threshold leakage in flash memory cells
DE50000836D1 (de) Verfahren zum einbringen von durchkontaktierungslöchern in ein beidseitig mit metallschichten versehenes, elektrisch isolierendes basismaterial
TW200518390A (en) Antenna device and method for manufacturing the same
TW367528B (en) Titanium aluminide wetting layer for aluminum contacts
TW367565B (en) Integrated circuit with self-aligned isolation
TW359005B (en) Method for manufacturing mixed circuit bi-gap wall structure
TW335532B (en) An isolation method for memory cell and periphery circuit substrate
TW370693B (en) Method for forming a contact to a substrate
TW344117B (en) Integrated circuit with interlevel dielectric
EP0806785A3 (en) Method of manufacturing a field emission cold cathode capable of stably producing a high emission current
TW338176B (en) Improved delibeation pattern for epitaxial depositions
TW350077B (en) Chip-shaped electronic parts and the manufacturing method
TW364207B (en) Method for producing DRAM
TW337606B (en) Process for forming plugs by chemical mechanical polishing
TW351001B (en) High-density transistor and the manufacturing method
TW352478B (en) Method for fabricating low current leak MOSFET
KR960009113B1 (en) Method for forming node electrode of capacitor
TW375772B (en) Field implant method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees