TW335494B - The decode method of high density ROM array - Google Patents
The decode method of high density ROM arrayInfo
- Publication number
- TW335494B TW335494B TW085114788A TW85114788A TW335494B TW 335494 B TW335494 B TW 335494B TW 085114788 A TW085114788 A TW 085114788A TW 85114788 A TW85114788 A TW 85114788A TW 335494 B TW335494 B TW 335494B
- Authority
- TW
- Taiwan
- Prior art keywords
- rom array
- high density
- bit line
- row
- word line
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085114788A TW335494B (en) | 1996-11-29 | 1996-11-29 | The decode method of high density ROM array |
US08/965,502 US5926417A (en) | 1996-11-29 | 1997-11-06 | Read method for reading data from a high-density semiconductor read-only memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085114788A TW335494B (en) | 1996-11-29 | 1996-11-29 | The decode method of high density ROM array |
Publications (1)
Publication Number | Publication Date |
---|---|
TW335494B true TW335494B (en) | 1998-07-01 |
Family
ID=21625581
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085114788A TW335494B (en) | 1996-11-29 | 1996-11-29 | The decode method of high density ROM array |
Country Status (2)
Country | Link |
---|---|
US (1) | US5926417A (zh) |
TW (1) | TW335494B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2839386B1 (fr) * | 2002-05-02 | 2004-08-06 | St Microelectronics Sa | Memoire non volatile a lecture seule modifiable par redefinition d'un niveau de metal ou de vias |
US7002827B1 (en) | 2003-02-10 | 2006-02-21 | Virage Logic Corporation | Methods and apparatuses for a ROM memory array having a virtually grounded line |
US6853572B1 (en) * | 2003-02-28 | 2005-02-08 | Virage Logic Corporation | Methods and apparatuses for a ROM memory array having twisted source or bit lines |
US7149142B1 (en) | 2004-05-28 | 2006-12-12 | Virage Logic Corporation | Methods and apparatuses for memory array leakage reduction using internal voltage biasing circuitry |
US8120941B2 (en) * | 2008-11-07 | 2012-02-21 | Seagate Technology Llc | Bidirectional non-volatile memory array architecture |
US8296705B2 (en) * | 2009-08-28 | 2012-10-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Code tiling scheme for deep-submicron ROM compilers |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5663903A (en) * | 1995-07-28 | 1997-09-02 | Utron Technology Inc. | Flat-cell read-only memory |
US5684733A (en) * | 1996-09-30 | 1997-11-04 | Holtek Microelectronics, Inc. | Fixed resistance high density parallel ROM device |
-
1996
- 1996-11-29 TW TW085114788A patent/TW335494B/zh active
-
1997
- 1997-11-06 US US08/965,502 patent/US5926417A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5926417A (en) | 1999-07-20 |
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