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Priority to TW086106578ApriorityCriticalpatent/TW333690B/en
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Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Semiconductor Memories
(AREA)
Abstract
A method for preventing polysilicon at back side of Si wafer peeling in SRAM process of (4T + 2R), it includes: Form polysilicon layer on substrate; Form oxide at back side of substrate; Form dielectric on polysilicon layer.
TW086106578A1997-05-161997-05-16The method for preventing polysilicon peeling in SRAM process of (4T+2R)
TW333690B
(en)