TW331665B - Read only memory cell to provide a production method for manufacturing the read only memory cell, and its distinguishing is the MOS transistor is arranged at special angle.
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Read only memory cell to provide a production method for manufacturing the read only memory cell, and its distinguishing is the MOS transistor is arranged at special angle.
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Priority claimed from DE19549486Aexternal-prioritypatent/DE19549486C2/en
Priority claimed from DE19544327Aexternal-prioritypatent/DE19544327C2/en
Application filed by Siemens AgfiledCriticalSiemens Ag
Application grantedgrantedCritical
Publication of TW331665BpublicationCriticalpatent/TW331665B/en
The invention relates to a read-only memory cell arrangement having a substrate which comprises semiconductor material and has, in the region of a main area, memory cells arranged in a cell field. The invention is distinguished by the fact that the walls of the trench of the MOS transistor are arranged at an angle of approximately 45 C to approximately 80C with respect to the main area (3) of the substrate and are doped with a doping material of a predetermined conductivity in order to define the programming of the MOS transistor .
TW085114695A1995-11-281996-11-28Read only memory cell to provide a production method for manufacturing the read only memory cell, and its distinguishing is the MOS transistor is arranged at special angle.
TW331665B
(en)
Read only memory cell to provide a production method for manufacturing the read only memory cell, and its distinguishing is the MOS transistor is arranged at special angle.
Read only memory cell to provide a production method for manufacturing the read only memory cell, and its distinguishing is the MOS transistor is arranged at special angle.