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A manufacturing process for Schottky diode utilizing SF4 and InP-type III-V com plex semiconductor including a complex semiconductor plate and a Schottky contact metal characterized at:form a SF4 and PF3-containing film between the comple x semiconductor plate and Schottky contact metal.
TW086108168A1997-06-131997-06-13Manufacturing process for Schottky diode utilizing SF4 and InP-type III-V complex semiconductor
TW330344B
(en)