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Priority claimed from JP6247234Aexternal-prioritypatent/JPH0888259A/en
Application filed by Komatsu Denshi Kinzoku KkfiledCriticalKomatsu Denshi Kinzoku Kk
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Publication of TW329534BpublicationCriticalpatent/TW329534B/en
A surface treatment method for evaluating the semiconductor substrate is claimed and its features are: During the evaluation of the heavy metal contamination, such as Fe, Cr etc., on semiconductor substrate, through mixed acid to expose bared Si layer on the substrate; then proceed buffering HF cleaning and SC-1 cleaning to stabilize the testing value of minority carrier diffusion length in SPV method.
TW084112407A1994-09-141995-11-22The surface treatment method for evaluating the semiconductor substrate
TW329534B
(en)
Semiconductor substrate, method of manufacturing semiconductor substrate and semiconductor device, and method of inspecting and evaluating semiconductor substrate