TW329045B - Temperature control circuit and its semiconductor integrated circuit - Google Patents
Temperature control circuit and its semiconductor integrated circuitInfo
- Publication number
- TW329045B TW329045B TW086108889A TW86108889A TW329045B TW 329045 B TW329045 B TW 329045B TW 086108889 A TW086108889 A TW 086108889A TW 86108889 A TW86108889 A TW 86108889A TW 329045 B TW329045 B TW 329045B
- Authority
- TW
- Taiwan
- Prior art keywords
- temperature
- control circuit
- circuit
- semiconductor integrated
- temperature control
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000001816 cooling Methods 0.000 abstract 1
- 230000007613 environmental effect Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Automation & Control Theory (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Control Of Temperature (AREA)
Abstract
The present invention is a temperature control circuit, more particularly relates to a temperature control circuit having CMOS which inhibits chip temperature due to circuit operational speed and environmental changes. The present object is to provide a temperature control circuit and its semiconductor integrated circuit, which can quickly and steadily control chip temperature without additional cooling device when environment changes and circuit operational speed changes, can control chip temperature in the shortest period of time without any false operation. The temperature control circuit includes temperature detector 10, 40, 80 having varied temperature-resistance characteristics components, and output voltage generated by the temperature detector. The output voltage controls the control circuits 20, 50, 70 in which the temperature in controlled by the heat dissipation of the temperature detector output control in the control circuit. The temperature control circuit can be made in a substrate so that it is a semiconductor integrated circuit having good temperature characteristics.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8167360A JPH1011157A (en) | 1996-06-27 | 1996-06-27 | Temperature control circuit and semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
TW329045B true TW329045B (en) | 1998-04-01 |
Family
ID=15848281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086108889A TW329045B (en) | 1996-06-27 | 1997-06-25 | Temperature control circuit and its semiconductor integrated circuit |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPH1011157A (en) |
KR (1) | KR980006246A (en) |
TW (1) | TW329045B (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100618876B1 (en) | 2004-11-10 | 2006-09-04 | 삼성전자주식회사 | Sequential tracking temperature sensor and temperature detecting method having hysteresis characteristic |
JP2009058438A (en) | 2007-08-31 | 2009-03-19 | Toshiba Corp | Temperature detection circuit |
CN103176489B (en) * | 2013-02-06 | 2015-09-30 | 南京千韵电子科技有限公司 | Chip internal temperature-controlled process and device and the experiment instrument based on this method |
-
1996
- 1996-06-27 JP JP8167360A patent/JPH1011157A/en active Pending
-
1997
- 1997-06-25 TW TW086108889A patent/TW329045B/en not_active IP Right Cessation
- 1997-06-26 KR KR1019970027652A patent/KR980006246A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JPH1011157A (en) | 1998-01-16 |
KR980006246A (en) | 1998-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |