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Insulated Gate Type Field-Effect Transistor
(AREA)
Electrodes Of Semiconductors
(AREA)
Abstract
A manufacturing method for MOS device with local anti-punchthrough structure, it includes following steps: - Form an compound structure on substrate, that structures includes a gate oxide and a conductive polysilicon layer; - Deposit 1st dielectric on top and side of the compound structure, and exposed substrate; - Deposit 2nd dielectric on 1st dielectric; - Etch back 2nd dielectric to expose 1st dielectric on compound structure; - Isotropic etching 1st dielectric to remove the 1st dielectric on top and side of compound structure to define the well at least one side of compound structure; - Through well to proceed doping on the substrate at one side of compound structure to form anti-punchthrough structure; - Fill the 3rd dielectric into well; - Anisotropic etching 2nd and 3rd dielectric to form side spacer; - Remove the exposed 1st dielectric layer; - Form doping area on exposed substrate.
TW086111661A1997-08-141997-08-14The manufacturing method for MOS device
TW327696B
(en)