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Application filed by Mos Electronics Taiwan IncfiledCriticalMos Electronics Taiwan Inc
Priority to TW085112371ApriorityCriticalpatent/TW326556B/en
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Publication of TW326556BpublicationCriticalpatent/TW326556B/en
A SOG planarization process using anti-reflective coating includes a. forming a metal layer on the substrate b. forming an anti-reflective coating on the metal layer c. defining the pattern of the anti-reflective coating and the metal layer to form the metal line structure d. forming a SOG on the metal line structure e. removing the SOG to make the surface of the SOG flat f. forming a dielectric layer on the SOG.
TW085112371A1996-10-091996-10-09SOG planarization process using anti-reflective coating
TW326556B
(en)