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Publication of TW325584BpublicationCriticalpatent/TW325584B/en
Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
A method of forming the anti-reflection coating including the following steps a. Form a Al-Cu-Si layer b. Form a Ti middle layer on the above Al-Cu-Si layer c. Form a anti-reflection coating on the above Ti middle layer.
TW085114787A1996-11-291996-11-29Method of forming anti-reflection coating
TW325584B
(en)