313676 A7 —---:-—-B7 五、發明説明（1 ) 本發明係有關於一種半導體製程，特別是有關於一種 用以形成氧化矽介電質的電漿化學沉積製程（plasma_ enhanced chemical vapor deposition, PECVD) ° 在製造半導體晶片的多重内連線製程中，—般是由介 電層（dielectrics fi丨m)和内連線金屬層加如-加伽丨丨ayer)交 互堆疊所構成。亦即，在元件區中的複晶矽層和源/沒極區 和第一金屬層之間，具有複晶矽-金羼層間介電層 (polysilicon-metai dielectnc pMD)做爲隔離之用，而透過 介電層之接點窗（contact)進行必要的連接；在各金屬層間 則具有金屬層間介電層（inier_metal die丨ectnc，imd)做爲隔 離之用，而透過介電層之介層窗I⑺幻進行必要的連接。由 於氧化碎（SiO2)的介電常數較低(:大约在3.9左右），因此上 述:之介電層大都以氧化矽做爲材丨料，或是經過適當掺雜的 氧化秒’例如磷矽玻璃（Phosphojnlicate Glass, PSG)和硼石粦 矽破璃（BoroplKispliosi丨icate Glask BPSG)，藉以增加隔離 的效果。特別是以電漿化學沉積法(pECVD)所沉積之氧化 矽，最經常使用。 經濟部中央標準局員工消費合作社印製 在製作金屬層間介電層時，由於下層的金屬層（主要是 以鋁爲主要材料）業已形成，在考量鋁溶點較低的因素，因 此主要是以矽化氫（silane, SiH4)爲反應材料的電漿化學沉 積來製造氧化矽介電層，用以避免高溫製程破壞已形成之 金屬層結構。第1圖爲多層金屬内連線中金屬層間介電屬 之結構剖面圖。一般金屬層間介電層是由三層介電層堆疊 而成，其材料如前所述5大都採用氧化矽。第一金屬層} 3 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297^-] ' ~ '~~~'— 313676 A7313676 A7 —--: -—- B7 V. Description of the invention (1) The present invention relates to a semiconductor process, in particular to a plasma chemical deposition process for forming silicon oxide dielectric (plasma_ enhanced chemical vapor deposition, PECVD) ° In the multiple interconnection process of manufacturing semiconductor wafers, it is generally composed of alternating stacking of dielectric layers (dielectrics fim) and interconnection metal layers (such as Jiajia-ayer) . That is, between the polycrystalline silicon layer and the source / electrode region and the first metal layer in the device region, there is a polysilicon-metai dielectnc pMD layer for isolation, The necessary connection is made through the contact window of the dielectric layer; between each metal layer there is an interlayer dielectric layer (inier_metal die ectnc, imd) for isolation, and through the dielectric layer of the dielectric layer Window I⑺ makes the necessary connections. Due to the low dielectric constant of SiO2 (: about 3.9), most of the above dielectric layers are made of silicon oxide, or properly doped oxides such as phosphorous silicon Glass (Phosphojnlicate Glass, PSG) and Borosilicate glass (Boropl Kispliosiicate Glask BPSG), in order to increase the isolation effect. In particular, silicon oxide deposited by plasma chemical deposition (pECVD) is most commonly used. During the production of the inter-metal dielectric layer by the Employees Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs, since the underlying metal layer (mainly using aluminum as the main material) has been formed, considering the low melting point of aluminum, the main reason is to Hydrogen silicide (silane, SiH4) is a chemically deposited plasma of reactive materials to fabricate a silicon oxide dielectric layer to avoid damage to the formed metal layer structure during high temperature processes. Figure 1 is a cross-sectional view of the structure of the intermetal dielectric in the multilayer metal interconnection. Generally, the inter-metal dielectric layer is formed by stacking three dielectric layers. As mentioned above, most of the materials are silicon oxide. The first metal layer} 3 This paper scale applies the Chinese National Standard (CNS) A4 specification (210X297 ^-] '~' ~~~ '-313676 A7
經濟部中央標準局員工消費合作社印裂 五、發明説明（2 ) 經由沉積、光學微影和蝕刻等步驟，形成如 剖面形狀，做爲元件區中各電極間 ^第1圖所示之 包括介電廣1〇、心12的金屬屬間介二路二另外， 屬屬1和第二金屬居2之間，其中，:〜於第一金 是利用PECVD方式所形成。犾而丨日1〇和12 —般 、丨 Λ而，由於利用 形成介電層的步階覆蓋（stepc_age)_$=3 電層1〇和12之間加入利用旋塗-破璃（Spm 〇n G1 “ 方式所形成的介電層U，藉以達到局部平坦化==) 一般在晶圓上利用PECVD形成氧切介 之設備，係爲PECVD反應器，其結構如第2圖所示。複數 個晶圓:36係置於可旋轉之晶座32上，透過轉心 轉驅動器24使其旋轉，藉以使得晶座32上的所有曰曰’圓= 得以均勻地沉積氧化石夕。加熱器:26置於晶座^的;' 藉以傳遞熱能至晶圓36。在反應器中氣體入口爲2〇，經 由第1圖中箭點所示之方向’從氣體出口 3〇抽出。:在形成— 氧化矽時’所通入的氣體爲氧化亞Mn2〇)和矽化乂氫 _4)。在所通入氣體達穩定流動的情況下，由電力送入 口 40送入電力，並在電極34上產生好射頻，藉以解離氧 化亞氮和秒化氫，產生以下之反鹿： SiH4(g) + 4N20(g) ^ Si〇2(s) + 4N2(g) + 2H2〇(g) 其中，（s)代表固悲，（g)代表氣態。藉此，可在晶圓％表 面沉積氧化矽。 目前實際在半導體廠中製造pECVD氧化矽（或稱之爲 PE-oxlde)的細部步驟流程，如第3圖所示。首先，在反應 本紙張尺度適用中國國家標準（CNS ) A4規格 X 297 公釐） —---------------裝--- (請先閲讀背面之注意事項再填寫本頁) ir m nmf fn· i^i— _ rfn^i fm « 313676 A7 B7 五、發明説明（3 ) 姦中穩定通入氣體氧化亞氮（步驟S11)，此時反應器内已置 入待處理晶圓。接著，在反應器中加入RF射頻，解離流 動的氧化亞氮氣體，藉以對待處理晶圓進行電漿處理（步驟 512) 。接著，在原反應器中通入氧化亞氮和矽化氫所構成 的混合氣體，並使其穩定流通於待處理晶圓的表面（步驟 513) 。此時，在反應器中加入^^^射頻功率.，用以解離其中 的氧化亞氮和矽化氫，使其產I如上式之化學反應i藉以 在晶圓上沉積氧化矽（步驟S14)l。最後，再利用眞空系統抽 離其中之殘餘氣體（步驟S15)e 然而，習知形成氧化矽之pECVD製程，在沉積氧化 珍層的厚度上具有相當不確定舍因素。在第;3圖的流程圖 中，步驟SU對流通的氧化亞氮以处射頻功率加以解離， 對晶圓的表面進行電漿處理離氧化亞氮所產生的街生 物質，如N2〇+離子和〇+離子，會殘留在反應器中。直到 步驟SU at行氧化矽層的沉積時％ t加久沉積氧化秒的反 應式中，使得反應產物氧化矽之量無法控制。上述之現象 將會間接地造成晶圓生產良率(yield)下降，從而增加生產 成本。 - . - nn : - ---- -- - I · I-1 — —丨hi —裝—— (請先閱讀背面之注意事項再填寫本頁)Printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (2) Through deposition, optical lithography, and etching, a cross-sectional shape is formed as the inter-electrode in the component area. The radio and television 10 and the metal of the heart 12 are intermediary two-way two. In addition, the genera 1 and the second metal are located between 2, wherein: the first gold is formed by PECVD. In general, 10 and 12 are common, but due to the use of step coverage forming a dielectric layer (stepc_age) _ $ = 3 between the electrical layers 10 and 12, the use of spin-break glass (Spm 〇 n G1 "The dielectric layer U formed by means of local planarization ==) Generally, the equipment used to form oxygen-cutting media on the wafer by PECVD is a PECVD reactor, whose structure is shown in Figure 2. Wafers: 36 are placed on the rotatable pedestal 32, which is rotated by the rotary drive 24, so that all the circles on the pedestal 32 = can be uniformly deposited oxide oxide evening. Heater: 26 is placed on the pedestal ^; 'to transfer thermal energy to the wafer 36. The gas inlet in the reactor is 2〇, through the direction shown by the arrow in Figure 1' from the gas outlet 30 .: In the formation- When oxidizing silicon, the gases introduced are sub-oxide (Mn 2 O) and silicided hydrogen 4). In the case where the gas introduced reaches a steady flow, electricity is sent from the power inlet 40 and is generated on the electrode 34 A good radio frequency can dissociate nitrous oxide and hydrogen sulfide to produce the following anti-deer: SiH4 (g) + 4N20 (g) ^ Si〇2 (s) + 4N2 (g) + 2H2〇 (g) where (s) stands for Gubei and (g) stands for gaseous state. By this, silicon oxide can be deposited on the surface of the wafer. At present, pECVD silicon oxide (or PE) is actually manufactured in a semiconductor factory -oxlde) detailed steps flow, as shown in Figure 3. First of all, the Chinese National Standard (CNS) A4 specification X 297 mm is applied to reflect the paper size -------------- --Install --- (Please read the precautions on the back before filling in this page) ir m nmf fn · i ^ i— _ rfn ^ i fm «313676 A7 B7 Fifth, the description of the invention (3) Stable ventilation of gas during rape Nitrous oxide (step S11), the wafer to be processed has been placed in the reactor. Then, RF is added to the reactor to dissociate the flowing nitrous oxide gas, and the plasma to be processed is processed by plasma (step 512). Next, a mixed gas composed of nitrous oxide and hydrogen silicide is introduced into the original reactor and allowed to circulate stably on the surface of the wafer to be processed (step 513). At this time, add ^^ to the reactor ^ RF power. Used to dissociate nitrous oxide and hydrogen silicide to produce a chemical reaction of the above formula i. Silicon oxide is deposited on the wafer (step S14). Finally, the residual gas is evacuated by the empty system (step S15). However, the conventional pECVD process for forming silicon oxide has a considerable thickness in depositing the oxide layer Uncertain factors. In the flow chart of Figure 3, step SU dissociates the circulating nitrous oxide at radio frequency power, and performs plasma treatment on the surface of the wafer to remove the street biomass generated by nitrous oxide, For example, N2〇 + ions and 〇 + ions will remain in the reactor. In the reaction formula until the deposition of the silicon oxide layer in step SU at the time of the deposition of the oxide layer, the amount of silicon oxide in the reaction product cannot be controlled. The above phenomenon will indirectly cause the wafer production yield to decrease, thereby increasing the production cost. -.-nn:-------I · I-1 — — 丨 hi —install—— (please read the precautions on the back before filling this page)
、1T 經濟部中央椟準局員工消費合作社印褽 有鐘於此，本發明之目的，在於提供—種新的電衆化 學沉積製程，藉以解決傳統電漿化學沉積製程中所生的氧 化砂廣厚度無法控制的缺點，並可進而提“圓生產的良 率〇 根據上述之目的，本發明提供—種電衆化學沉積裝程 的細部操作㈣(咖㈣’其細部操作㈣包括下列步驟： 5 本紙張尺度適用中國國家榡準.（CNS ) A4規格 ------ > • m - 1-— —II . Α"-‘*ίβ£τϊϊ·'^^ f ^13676 A7 B7 經濟部中央榡準局員工消費合作社印製 五、發明説明（4 ) 首先，將氧化亞氮(Νβ)穩定通氣於反應器中晶圓基板上， 並將射頻源加入反應器中用以解離所流通之氧化亞氮，藉 以對Ϊ)日圓基板表面進行電衆處理（plasma treatment)。接著， 抽離反應器中殘餘氧化亞氮及其衍生化合物，包括ν20+ 離子和氧離子。如此，可以避免氧化亞氮和其衍生化合物 與用於沉積氧化矽的矽化氫發生反應，增加沉積製程中的 …不確定因素。抽離殘餘氣體之後·，將.矽化I和氧化亞氮穩 足通氣於反應器中晶圓基板上，準備進行氧化矽層沉積。 最後，將射頻源加入反應器中解離所流通之矽化氫和氧化 亞氮，藉以沉積氧化矽層於晶圓基板上。反應完成後，即 抽離其中的殘餘氣體。 ： 圖式之簡單説明·· 爲$本發明之上述目的、特徵、和優點能更明顧易懂， 下又特較佳實施例，並配合所附圖式，作詳細説明如 下：！ , 第i圖爲多層金屬内連線中金屬層間介電層之結 面圖。 J 、第2圖爲利用電漿化學沉積(PECVD)製程生成氧切 < PECVD反應器之示意圖。 第3圖爲習知電榮化學沉積製程形成氧化秒之細部操 作步驟流程圖。 第4圖爲本發明„化學沉積製程形成氧化 杈作步驟流程圖。 Π 第5圖爲利用習知電槳化學沉積製程形成厚度〇入 M氏張尺, 1T Ministry of Economics Central Bureau of Precinct Employee Consumer Cooperative printed here, the purpose of the present invention is to provide a new electrical chemical deposition process, in order to solve the traditional plasma chemical deposition process of oxidized sand The shortcomings of the thickness cannot be controlled, and it can be further mentioned that the "yield of round production. According to the above purpose, the present invention provides-a detailed operation of the chemical deposition process of the electric public" This paper scale is applicable to the Chinese National Standard. (CNS) A4 specifications ------ > • m-1-— —II. Α "-'* ίβ £ τϊϊ ·' ^^ f ^ 13676 A7 B7 Ministry of Economic Affairs Printed by the Central Government Bureau of Consumers Cooperatives V. Description of the invention (4) First, the nitrous oxide (Νβ) is stably ventilated on the wafer substrate in the reactor, and the RF source is added to the reactor to dissociate the circulating Nitrous oxide, so as to perform plasma treatment on the surface of the Y substrate). Then, the residual nitrous oxide and its derivative compounds, including ν20 + ions and oxygen ions, in the reactor are extracted. In this way, nitrous oxide can be avoided with The derivative compound reacts with the hydrogen silicide used to deposit silicon oxide, increasing the ... uncertainty in the deposition process. After evacuating the residual gas, the silicide I and nitrous oxide are ventilated firmly on the wafer substrate in the reactor To prepare for silicon oxide layer deposition. Finally, add a radio frequency source into the reactor to dissociate the circulating hydrogen silicide and nitrous oxide to deposit the silicon oxide layer on the wafer substrate. After the reaction is completed, the residual gas is pumped out .: A brief description of the drawings. The above objects, features, and advantages of the present invention can be more clearly understood, and the following preferred embodiments are described in detail in conjunction with the attached drawings: Figure i is the junction view of the intermetal dielectric layer in the multi-layer metal interconnection. J, Figure 2 is a schematic diagram of the plasma chemical deposition (PECVD) process to produce oxygen cut < PECVD reactor. Figure 3 is The detailed operation steps flow chart of forming the oxidation seconds in the electroless chemical deposition process of Xizhi. FIG. 4 is a flow chart of the steps for forming the oxidation branch of the chemical deposition process of the present invention. Π Figure 5 is the thickness of the conventional M-stretcher formed by the conventional electro-paddle chemical deposition process.
(CNS )A4规格（210x297公釐） (請先閱讀背面之注意事項再填寫本頁} •裝· 、17 線---- •..... I - - —^1 1·_1 -- -- 1 五、發明説明（5 氧化矽層之實驗厚度圖。 第6圖爲利用本發明電衆化學 5〇0〇A氧化矽層之實驗厚度圖。 '成厚/ 符號説明： 1 :第一金屬層，· 2 :第二金屬層，‘ 10、12 :: .PECVD 氧切廣；: s 20:反庠齑拎这， ί υ机tc矽層；- 應軋體送氧口 ； 30 :犮應氣體出氣口； 22 :轉軸；24 .··迴轉驅動器；26 :加熱器； 32 :晶座；34 :電極；36 .曰® , S11 Sim •卵圓；40 :好電力供應； sii〜si5 ·習知PECVD細部操f作”； S1〜S6 :本發明拖(^;〇細部操作步驟； ί - 實施例： 1 | 經濟部中央樣隼局員工消費合作杜印製 本發明之電漿化學沉獍製程，丨主要係著眼於料 ⑪作步驟中進行晶圓表面電漿處理時殘留的離子化氣體。 Ζ加以排除以避免在沉積氧化秒的步碌中造成不確“ 在目前的半導體製程中，利用電漿化學沉積製 /成减矽的方式主要是應料金屬層間介電財 以製造其中之PE_Qxlde爲例，但是對於熟知此 抆两者而τ，此處並非用以限定本發 ^ 贫月《靶圍，本發明所 揭洛<細郅步驟同樣可適用於其他製造氧化矽之情況ό 第4圖爲本發明實旅例中電衆化學沉積製程=氧化 矽〈細部操作步騍流程圖。首先在步驟S1中，將氧化亞氮 本'絲尺度^( CNS )人4絲(~~~—-—---- 發明説明（6) 氣體穩定通氣於PECVD反應器之晶圓基板上方。在本實 族例中，氣化亞氣氣體流量爲1 5〇〇 sccm。所通之氧化亞 氮氣體是预備做爲電漿處理之用。當氣體流量達穩定狀態 時，即透過第2圖中電力送入口 4〇在反應器中產生射頻 源，藉以解離其中的Νζ〇，對反應器内的晶圓表面進行電 ，處理（步驟S2)。在本實施例中，RF功率約爲3〇〇Waits， ft作的溫度約爲25〇β(：_4〇〇Τ ,-此.時，反應.器内.包括N2〇 氣體和解‘離後的吣0+離子和〇+離子，其壓力値大约在ι 至5 T0rr左右。上述實際操作條件和數値並非甩以限定本 發明’對於熟知此技藝者而言，可依實際應用來加以調整， 仍不脱離;本發明之範圍。 .. ‘ 在完成電漿表面處理之後，由於殘餘離子化氣體（由 沁〇所產:生）會在後續的氧化矽沉積步騍中造成』不穩定之 因素，亦即與秒化氫進行非預期的反應，因此i步驟S3 中，利用眞空系統將反應器中的N2〇氣體和其解離後衍生 物質抽離出去。由於離子化氣體的抽離，反應器内的壓力 會降低。在考量實際抽離動作所需時間以及所耗費之成 本’在本實施例中反應器的壓力大约降低Q i 以下， 即可達到相當好的效果。然而對於熟知此技藝者而言，可 依實際需求調整上述數値’仍不脱離本發明之範圍。 在步驟S3實施抽氣步躁之後，如一般沉積氧化秒之 =CVD万式，首先於反應器中穩定通入砂化氮和氧化亞氣 (步踩S4)。在本實施例中，所通入之氧化亞氮流量爲_ seem，石夕化氫流量爲4〇sccm。在晶圓上方的氣體達 °13676 Λ 二 戈Μ °13676 Λ 二 戈Μ Α7 Β7 五、發明説明（ 到—穩足狀態時，即可加入RF電力在反應器内產生射頻 源’藉以解離其中的氧化亞氮和矽化氫（步驟S5)。在本實 施例中’功率爲180 Watts，溫度大約在4CKTC左右。由 於在步驟S3中已抽離出氧化亞氮離子化氣體，因此藉由沉 人/件的彳二制，可以在晶圓表面上形成所需厚度之氧化秒 J電質’達到控制製程之目的。最後，抽出反應器中殘餘 ^氣體{步棣S6) ’即完成本發明中形.成氧化秒之電漿化學 =積1¾。必須注意的是，上述之處理程序均在同一反應 為中進行（m-sltu)，因此能夠避免移出移入晶圓之不便。 嚯/除此之外’本發明在PE-oxide製程中利用電漿處理後 亍令抽氣步驟，藉以抽離笋中的殘留氣體似增加後續製 良率和可靠性，實際上亦可適用於其他叛似之電漿處 ^程:中。電漿處理製程中七用射頻電力解離流缚氣體， 二成爲離子和分子的混合‘，對—基板進域理；在電 后-後’即可利用本發明實施例所.述之觀念今在同-::内:殘留氣體抽離’避免殘留離子化氣體影響到後 爲t '數。因此，本發明實施例雖提出PE姻de製程 於」ΓΓ但是並非用以限定本發明，相同原理亦可適用 於其他電漿處理製程中。 積製第6圖分別爲利用習知和本發明電衆化學沉 和第6圖Ϊ 化秒層之實驗厚度圖。在第5圖 所測得:實二：爲2所進行之批號，表示該批號 楚實 圖所示之習知製程情況，可清 見务出厚度呈現相當不規則的起伏，以實驗數據 (請先閲讀背面之注意事項再填寫本頁) 裝---. ·I.. 、1Τ' ' 經濟部中央橾準局貝工消費合作社印袈 --線--- » - HH ml » -1 fm 經濟部中央揉準局員工消費合作社印裝 A7 -- — —. __ B7 五、發明説明^ ~ *——-— 成’平均値爲498U，標準差爲76.5A。相對於第6圖所示 2本發明製轉況而言，可清楚比㈣本發明製程方法所 •氧切厚度則呈現較爲平㈣曲線，其 4980人’標準差爲4〇 lA。經實際驗证所製造出之晶圓良 率’習知技術爲⑴級！，本發明爲87 9%±3 2，良率 2.5%U。此即代:表本發明之電漿化學沉積製程確 ，、叱夠改善製程之良率，.極適合產業之大量應用。 本發明之電漿化學沉積製程具有下列之優點： …1 1夠有效㈣舰VDt程形成氧切之條件， 藉以提高晶圓製造之生產良率。 2 .修改後之pECVD製程細部步躁仍然維持在同一 PECVD反應器中’因此在實施時不會造成操作上的不便， 亦不會增加過多额外的成本，極具產業上之利用價値。 '本發明雖以—較佳實_揭露如上，然其並非用以限 = 任何熟習此項技藝者’在不脱離本發明之精神 和:圍内’當可作更動與潤飾，因此本發明之保護範圍告 視後附之申請專利範圍所:界定者爲準。 田 J n n I— In l— - n u u . (請先聞讀背面之注意事項再填寫本頁) --訂·"--- 線----- .·1 1- -I- 11— . ο 1 張 紙 本 用 適 準 標 家(CNS) A4 specification (210x297mm) (please read the precautions on the back before filling in this page) • Install ·, 17 lines ---- • ..... I--— ^ 1 1 · _1- -1 Fifth, the description of the invention (5 the experimental thickness of the silicon oxide layer. Figure 6 is the experimental thickness of the silicon oxide layer of 50000A using the public chemical of the present invention. 'Cheng thick / symbol description: 1: One metal layer, 2: 2nd metal layer, '10, 12 ::. PECVD oxygen cutting ;; s 20: reverse this, the tc silicon layer;-oxygen supply port of the rolling body; 30 : Luying gas outlet; 22: rotating shaft; 24... Rotary drive; 26: heater; 32: crystal base; 34: electrode; 36. Yue ®, S11 Sim • Oval; 40: good power supply; sii ~ Si5 · People know the details of PECVD operation "; S1 ~ S6: The present invention drags (^; 〇 detailed operation steps; ί-Examples: 1 | Ministry of Economic Affairs Central Sample Falcon Bureau employee consumption cooperation to print the electricity of the invention In the process of slurry chemical sinking, the main focus is on the ionized gas remaining during the plasma treatment of the wafer surface in the step of ⑪. Z is excluded to avoid inaccuracies during the deposition of oxidation seconds. In the previous semiconductor process, the method of using plasma chemical deposition to produce / reducing silicon is mainly to prepare the inter-metal dielectric material to manufacture PE_Qxlde as an example, but for the well-known two of them, τ is not used here Restricted to the present ^ Poor Moon "Target Range, the disclosed steps of the present invention are also applicable to other cases of manufacturing silicon oxide. FIG. 4 is the chemical deposition process of the electric public in the example of the present invention = silicon oxide < Detailed operation step flow chart. First, in step S1, the nitrous oxide's silk scale ^ (CNS) human 4-wire (~~~ ----------- Description of the invention (6) Stable ventilation of gas to PECVD reaction Above the wafer substrate of the device. In this example, the flow rate of vaporized nitrous oxide gas is 1500 sccm. The nitrous oxide gas is ready for plasma treatment. When the gas flow rate is stable In the state, that is, the radio frequency source is generated in the reactor through the power inlet 4 in Figure 2, so as to dissociate the Νζ〇 therein, to perform electrical treatment on the surface of the wafer in the reactor (step S2). In this embodiment In, the RF power is about 300Waits, the temperature of ft is about 25〇β (: _4〇〇Τ,-At this time, the reactor. Including N2〇 gas and dissociated after the dissociation of 0 + ions and 〇 + ions, the pressure value is about ι to 5 T0rr. The actual operating conditions and number The value is not limited to limit the present invention. For those skilled in the art, it can be adjusted according to the actual application, and it still does not deviate from the scope of the present invention .. After the plasma surface treatment is completed, due to the residual ionized gas (Produced by Qin: Health) will cause unstable factors in the subsequent step of silicon oxide deposition, that is, an unintended reaction with hydrogen sulfide. Therefore, in step S3, the reactor is used to remove the reactor The N2〇 gas and its derivatives are dissociated after being dissociated. Due to the extraction of ionized gas, the pressure in the reactor will decrease. In consideration of the time required for the actual extraction operation and the cost consumed, in this embodiment, the pressure of the reactor is reduced approximately below Qi, and a very good effect can be achieved. However, for those skilled in the art, the above values can be adjusted according to actual needs without departing from the scope of the present invention. After the pumping step is carried out in step S3, as in the general deposition oxidation seconds = CVD method, first, the sand nitrogen and sub-oxide gas are stably introduced into the reactor (step S4). In this embodiment, the flow rate of nitrous oxide introduced is seem, and the flow rate of Shixihua is 40 sccm. The gas above the wafer reaches ° 13676 Λ Ergo Μ ° 13676 Λ Ergo Μ Α7 Β7. 5. Description of the invention (When it is in a stable state, RF power can be added to generate a radio frequency source in the reactor to dissociate it. Nitrous oxide and hydrogen silicide (step S5). In this embodiment, the power is 180 Watts and the temperature is around 4CKTC. Since the ionized gas of nitrous oxide has been extracted in step S3, The second system of the device can form the required thickness of the oxide second J on the surface of the wafer to achieve the purpose of controlling the process. Finally, the residual ^ gas {step S6) in the reactor is extracted to complete the Chinese form . Plasma chemistry of oxidation seconds = product 1¾. It must be noted that the above processing procedures are all carried out in the same reaction process (m-sltu), so the inconvenience of moving out into the wafer can be avoided.嚯 / Additionally, the present invention utilizes plasma treatment in the PE-oxide process to perform the pumping step, so as to extract residual gas from the bamboo shoots, which seems to increase the yield and reliability of the subsequent manufacturing process, and is actually applicable to Other plausible plasmas ^ course: medium. In the plasma processing process, seven uses RF power to dissociate the bound gas, and the other becomes a mixture of ions and molecules, and the substrate is processed; after the electricity-afterwards, you can use the concepts described in the embodiments of the present invention. Same as-:: inner: the residual gas is pumped away to avoid the influence of residual ionized gas to be t '. Therefore, although the embodiment of the present invention proposes the PE process to be “ΓΓ”, it is not intended to limit the present invention, and the same principle can also be applied to other plasma processing processes. Figure 6 of the product is an experimental thickness chart of the conventional chemical deposition using the conventional and the present invention and the second layer of Figure 6. Measured in Figure 5: Actual two: the batch number carried out by 2, indicating the state of the conventional process shown in the batch number. It can be seen that the thickness shows quite irregular fluctuations. Based on the experimental data (please first Read the precautions on the back and then fill out this page) Install ---. · I .., 1Τ '' Ministry of Economic Affairs Central Bureau of Industry and Fisheries Beigong Consumer Cooperatives Cooperative Seal-Line --- »-HH ml» -1 fm Economy Printed by the Central Committee of the Ministry of Accreditation and Employee Consumer Cooperatives A7 ---. __ B7 V. Description of the Invention ^ ~ * ——--- Cheng's average value is 498U, and the standard deviation is 76.5A. Compared with the transition of the present invention shown in Fig. 6, it can be clearly seen that the thickness of the oxygen-cutting section is flatter than that of the process of the present invention, and the standard deviation of 4980 people's standard is 40 lA. The yield of wafers produced by actual verification ’is a ⑴ level of conventional technology! In the present invention, it is 87 9% ± 32, and the yield is 2.5% U. This is the new generation: it shows that the plasma chemical deposition process of the present invention is accurate, and it can improve the yield of the process, which is very suitable for a large number of industrial applications. The plasma chemical deposition process of the present invention has the following advantages:… 1 1 is effective enough to form oxygen cutting conditions in the VDt process of the ship, thereby improving the production yield of wafer manufacturing. 2. The details of the modified pECVD process are still maintained in the same PECVD reactor. Therefore, it will not cause any inconvenience in operation and will not add too much extra cost during implementation, which is extremely valuable in the industry. 'The present invention is disclosed as above, but it is not intended to be limited = any person who is familiar with this skill' can be used for modification and retouching without departing from the spirit and scope of the present invention. The scope of protection is subject to the scope of the attached patent application: whichever is defined. Tian J nn I— In l—-nuu. (Please read the precautions on the back before filling in this page) --Subscribe &" --- Line -----. · 1 1- -I- 11— . ο 1 standard bidder for paper
Μ \ly s NΜ \ ly s N