311287 A7 B7 _____ 五、發明説明（） 本發明係關於應用透光導電薄膜之半導體晶片，尤指 發光二極體之磊晶片與基片的結合技術，利用此技術可以 顯著的提高發光二極体的亮度。 在發光二極体领域，一種常用於提高發光二極体亮度 的方法便是採用透明的基片。以660 nm的AlGaAs紅色發光 二極体爲例，此類發光二極體之結構，大致可以分成三種 。圖一中的二極體結構含有一以帶正導電性之GaAs爲基片 11之舉具賓。單異質結構係成長一帶正導電性的AlGaAs層 12，再成長一帶負導電性的AlGaAs層13。此種發光二極體 之發光亮度爲500到800mcd。 圖二中的二極體結構爲雙異質結構。雙異質結構包含 一帶正導電性之AlGaAs底層22、一未接雜質之活性AlGaAs 中層23,以及一帶負導電性AlGaAs上層24，而其基片係爲 帶正導電性之GaAs層21。此類發光二極體之發光亮度大約 爲1.5cd 。 囷三中之二極體結構類似於圖二，包括有一帶正導電 性之AlGaAs底層31、一未摻雜質之活性AlGaAs中層32，以 及一帶負導電性AlGaAs上層33。但是基片則爲帶正導電性 的AlGaAs基片31所取代。此種二極體發光之亮度大约可達 3cd,圖三結構之發光二極体亮度之所以較囷二結構之發光 二極体亮度高一倍，主要原因便是採用了透明基片而使 得發光二極体產生的光往透明基片方向行進時，不會被吸 收0 (CNS ) A4規格（210X297公釐） .----------r 裝------訂------，線 (誚先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 B7 311287 五、發明説明（） 以上囷式中所顯示的習有二極體結構中，各半導體層 都是以液相磊晶法成長，雖然圖三中之二極體結構具有最 好的發光效率，但是要成長非常厚的AlGaAs基片非常困難 ，所以此類二極體的生產是半導體廠商的一大挑戰。 在生產高效率之其他顏色範圍的發光二極髏，例如從 綠光到紅光範園（560-630nm)的高亮度AlGalnP發光二極 體，如附囷四所示，此傳統之雙異質包含一帶負導電性之 AlGalnP底層43，一未摻雜質之AlGalnP活性層44,以及 一帶正導電性的AlGalnP上層45。爲了增加來自電極接觸 端47及41之導電電流之流散，在雙異質的上層45又成長一 層帶正導電性的厚窗層46 〇 目前的AlGalnP二極體中，一般是以帶負導電性的GaAs 作爲基片，然而因爲大部份發向基片的光都被此不透光的 基片吸收，二極體的發光效率受了限制。美國加州惠普公 司的F.A. Kish等人提出一種將GaAs腐蚀而以一而同 樣帶負導電性的kP基片結合以取代原改良式二極體，其 中所使用的晶片結合技術是先前由美國麻州林肯實驗室的 Z.L.Liau(廖榮隆）等人所研究發展的。雖然這種改良式二 極體可有較高的發光度，可是卻有兩個缺點，第一個缺點 是晶片結合必須在相當高的溫度中進行，一般大約是83〇 t以上°另一個缺點是在GaP和A1GaInP之接合面上， 由於晶格常教之不匹配，很容易導致晶片的彎曲或破裂。 本發明的主旨在提供一種新的晶片結合方法以克服 上述的困難及缺點。本發明中的結合方法係用來以透明的 7---—________ 4 本紙張尺度適财關家鮮（CNS ) M規格（2IG><297公餐 "^ {請先閱讀背面之注意事項#填寫水育) 装· ir 經濟部中央榡準局員工消費合作社印製 A7 311287 五、發明説明（） 基片取代不透光的基片，而使所生產的發光二極體有很高 的發光效率。根據本發明中的方法，先將原先用以成長雙 異質的基片以傳統的腐蚀技術去除，然後以一層透光導電 薄膜鍍在新的透明某片之上，再將雙異質和新基片緊夾在 一起而置於高溫爐中加熱一段時間之後，晶片即相結合而 完成高效率之發光二極體。 在本發明中，透光導電薄膜有非常良好的導電性及透 光性，它可以讓大部份藍色到紅色的光都通過。又因爲此 薄膜並弈晶系廣，具有晶格差.異的镇输作用，所以可以用 來做爲兩種不同材料之間不同晶體結構相結合的緩衝層。 本發明中的晶體結合方法可以在較低溫之下進行，使生產 製造較爲容易。加入了 一層緩衝層薄膜也使二極體的結構 更爲堅強，同時又有良好的發光效率。 圖示説明： 囷一係一種含有AlGaAs單異質之傳統式發光二極體之結構 切面圖。 圖二係一種含有AlGaAs雙異質以及GaAs基片之傳統式發光 二極體之結構切面圖。 囷三係一種含有AlGaAs雙異質以及AlGaAs基片之傳統式發 光二極體之結構切面囷。 圖四係一種含有AlGalnP雙異質以及被結合的GaP基片之 發光二極體之結構切面圖。 圖五係本發明之發光二極體，此二極體包含一 雙異 本紙伕尺度適用中國國家標準（CNS ) Α4規格（210 X 297公釐） ------------^------ίτ------^ (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消费合作社印製 經濟部中央標準局員工消費合作社印製 311287 A7 B7 五、發明説明（） 質以及鍍有一層ITO薄膜之結合基片GaP。 囷六係以本發明之技術將一片以虹晶片及一片Gap基片以 ITO薄膜結合在500ti溫度中經過一小時處理後之電 流電壓特性圖。 圖七係以本發明之技術將一片GaAs晶片及一片GaP基片以 ITO薄膜結合在7001C溫度中經過一小時處理後之電 流電壓特性圖。 囷八係以本發明之發光二極體，此二極體包含一 A1GaInp 雙異質以及鍍有一層ITO薄膜之結合基片〇31>。 本發明提供一種晶片結合方法以改良如圖二中所示的 傳统發光二極體之發光效率，主要目的是將不透明的半導 體基片以透光的基片來取代之。爲了使基片容易結合並 緩衝基片與雙異質間不同晶格之介面，在被結合的基片上 鍍以一層透光導電薄膜來做爲緩衝層。 本發明之方法提供一種簡易及高效率的生產方式以製 造高發光亮度的發光二極體。爲了了解本方法之可行性， 將一片鍍有IT0透光薄膜的負導電型GaP透明基片與另一片 負導電型的GaP基片，在500亡之溫度下，經過一小時之加 熱結合而完成，從圖六中可以看出此結合的基片有很好的 電流-電壓線性反應。圖七係另一個結合基片的電流-電壓 特性圖，此結合基片則是在7〇〇它之溫度下，經過一小時 之加熱結合而製成，其電流與電壓也有很好的線性反應。 同時結合後的晶片其弩曲度在5〇〜i〇〇/im之間，比其它發 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇x297公釐） ----------- 裝-------訂------" (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 B7 _ 五、發明説明（) 光二極體蟲晶片如GaAsP/GaP的臀曲度1〇〇〜150#πι , A1 GaAs紅色磊晶片弩曲度在200〜300Am來的小。必須注意 的是結合介面中的透光導電薄膜，要有良好的透光性及導 電性，雖然在本發明中使用的是ΙΤ0，具有類似特性的其 他材料，如CTO(Cadium-Tin-Oxide)薄膜也可以扮演同樣 的功能。利用此一基片結合方法可以提高發光二極体的亮 度0 本發明所製造的發光二極體之發光強度大約與附圖三 中之傳統式二極體相同，然而卻避免了必須成長非 ·常厚的 AlGaAs基片的困難。 如圖二所示，傳統的發光二極體中之雙異質有一帶正 導電性之基片，在基片上先成長一層带正導電性之AKJaAs ，其上再成長一層未摻雜質的活性AlGaAs層，最後再成長 一帶負導電性之AlGaAs。 本發明如圖五所示，傳統式二極體已經先用一般腐蚀 技術選擇性的將其基片予以腐蝕去除。新的基片爲同樣是 帶正導電性之GaP透明基片51,基片表面被鍍以一層薄的 ΙΤ0透光導電膜52 ,再將其與去除基片的雙異質緊夾後置 於通有氮氣或氫氣的高溫爐中，在大約5〇〇它的溫度下加 熱約一小時即可完成晶片之接合。因此，本發明之結構包 含有一帶正導電性之GaP透明基片51、一薄的ΙΤ0透光導 電膜52、一帶正導電性之AlGaAs底層53、一未掺雜質之活 性AlGaAs中層54，以及一帶負導電性AlGaAs上層55。 比起現有的晶片結合方法，本發明的方法可以在較低 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -------------裝------訂------i (請先閱讀背面之注意事項再填寫本頁) 經濟部中央榡準局員Η消費合作枉印製 311287 A7 -----EZ_ 五、發明説明（） 溫中，以較短的時間完成晶片的結合。Z.L. Liau所研究 的方法，一般是在830eC的溫度下進行，大約須要兩小時 的時間。本發明中在加入一層透光導電薄膜後，可以使晶 片結合在500它中進行，而且僅須一小時的時間即可完成 。較低的工作溫度及較短的時間，可以避免雜質擴散或超 晶格及量子井結構層與層間元素的互相擴散而導致元件之 劣化。本發明之方法，除了容易生產之外，透光導電膜又 可扮演緩衝層以應變不同材料之間晶格結構的差異。因爲 薄膜本身並非結晶層，不同材料之不同晶格常數及熱膨脹 係數都可以被緩衝其應變，結合後的晶片也較不易f曲， 所以此技術可以結合較大的晶片。 本發明之方法同樣可以應用於生產如囷四中之含有A1 GalnP之傳統式二極體，先將帶負導電性的GaAs基片腐蝕 去除，再以鍍有ΙΤ0薄膜之帶負導電性的GaP基片取代結 合，以完成如附囷八中的二極體。雖然雙異質的材料不同 ，同樣的結合技術仍可以使用。在圖八之結構由下而上包 括有電極接觸端81、一帶負導電性的GaP基片82、一薄的 ΙΤ0透光導電膜83、一帶負導電性之AlGalnP底層84, —未 摻雜質之AlGalnP活性層85,以及一帶正導電性的AlGalnP 上層86、一帶正導電性的厚窗層87、另一電極接觸端88。 综上所述，本發明實乃一新穎而且具實用功效之發明 ，亦極具有產業上之利用價値，爰依法提出發明專利之申 請。 —.1 I II I « ^ 'vm II 旅 (#先閲讀背面之注意事項再填寫本頁} 本紙張尺度適用中國國家標準（CNS ) Α4規格（2丨0父297公釐）311287 A7 B7 _____ 5. Description of the invention () The present invention relates to a semiconductor chip using a light-transmitting conductive film, especially a combination technology of a light-emitting diode epitaxial chip and a substrate. Using this technology can significantly improve the light-emitting diode The brightness. In the field of light-emitting diodes, a method commonly used to increase the brightness of light-emitting diodes is to use a transparent substrate. Taking the 660 nm AlGaAs red light-emitting diode as an example, the structure of such a light-emitting diode can be roughly divided into three types. The diode structure in FIG. 1 contains a substrate with GaAs having positive conductivity as the substrate 11. The single heterostructure grows an AlGaAs layer 12 with positive conductivity, and then grows an AlGaAs layer 13 with negative conductivity. The luminous brightness of such a light emitting diode is 500 to 800 mcd. The diode structure in Figure 2 is a double heterostructure. The double heterostructure includes an AlGaAs bottom layer 22 with positive conductivity, an active AlGaAs middle layer 23 without impurities, and an upper layer 24 with negative conductivity AlGaAs, and the substrate is a GaAs layer 21 with positive conductivity. The brightness of this type of light-emitting diode is about 1.5cd. The structure of the diode in Fig. 3 is similar to that of Fig. 2 and includes an AlGaAs bottom layer 31 with positive conductivity, an active AlGaAs middle layer 32 with undoped material, and an upper layer 33 with negative conductivity AlGaAs. However, the substrate is replaced by an AlGaAs substrate 31 with positive conductivity. The brightness of this kind of diode can be up to 3cd. The reason why the brightness of the light-emitting diode in the structure of Figure 3 is twice that of the light-emitting diode in the structure of two is that the transparent substrate is used to make the light When the light generated by the diode travels towards the transparent substrate, it will not be absorbed. 0 (CNS) A4 specification (210X297mm). ---------- r 装 ------ 定- -----, line (read the precautions on the back before filling in this page) A7 B7 311287 printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention () The practice shown in the above formula is dipolar In the bulk structure, each semiconductor layer is grown by liquid phase epitaxy. Although the diode structure in Figure 3 has the best luminous efficiency, it is very difficult to grow a very thick AlGaAs substrate, so this type of diode Body production is a major challenge for semiconductor manufacturers. In the production of high-efficiency light-emitting diodes in other color ranges, such as high-luminance AlGalnP light-emitting diodes from green to red light (560-630nm), as shown in Appendix IV, this traditional dual heterogeneity contains a band A negative conductivity AlGalnP bottom layer 43, an undoped AlGalnP active layer 44, and a positive conductivity AlGalnP upper layer 45. In order to increase the dissipation of the conductive current from the electrode contact terminals 47 and 41, a thick window layer 46 with positive conductivity is grown on the double heterogeneous upper layer 45. In current AlGalnP diodes, the negative conductivity is generally used. GaAs is used as a substrate. However, since most of the light emitted from the substrate is absorbed by the opaque substrate, the luminous efficiency of the diode is limited. FA Kish et al. Of Hewlett-Packard Company, California, USA proposed a method of combining GaAs with a kP substrate with negative conductivity to replace the original modified diode. The chip bonding technology used was previously developed by Massachusetts Researched and developed by ZLLiau (Liao Ronglong) of Lincoln Laboratory and others. Although this improved diode can have higher luminosity, it has two disadvantages. The first disadvantage is that the wafer bonding must be performed at a relatively high temperature, generally about 83〇t or more. Another disadvantage It is on the junction surface of GaP and A1GaInP, due to the mismatch of the usual lattice teaching, it is easy to cause the wafer to bend or crack. The main purpose of the present invention is to provide a new wafer bonding method to overcome the above-mentioned difficulties and disadvantages. The combination method in the present invention is used to make transparent 7 ---________ 4 paper size suitable for financially relevant home (CNS) M specifications (2IG > < 297 public meals " ^ {please read the note on the back first Matter # fill in water education) installed · ir A7 311287 printed by the Employee Consumer Cooperative of the Central Bureau of Economics of the Ministry of Economy V. Description of the invention () Substrate replaces the opaque substrate, so that the light-emitting diodes produced are very high Luminous efficiency. According to the method of the present invention, the substrate originally used to grow the double heterogeneity is removed by traditional etching techniques, and then a layer of light-transmitting conductive film is plated on a new transparent wafer, and then the double heterogeneity and the new substrate After being clamped together and placed in a high-temperature furnace for a period of time, the wafers are combined to complete a high-efficiency light-emitting diode. In the present invention, the light-transmitting conductive film has very good conductivity and light transmittance, and it can pass most blue to red light. And because this thin film has a wide range of crystal systems and has a lattice difference and a different suppression effect, it can be used as a buffer layer for combining different crystal structures between two different materials. The crystal bonding method in the present invention can be carried out at a relatively low temperature, making production easier. The addition of a buffer layer film also makes the structure of the diode stronger, and at the same time has good luminous efficiency. Illustration: A series of structures of a traditional light-emitting diode containing AlGaAs single heterogeneity. Figure 2 is a cross-sectional view of the structure of a traditional light-emitting diode containing AlGaAs double heterogeneity and GaAs substrate. The XIII is a structural cross-section of a traditional light-emitting diode containing AlGaAs double heterogeneity and AlGaAs substrate. Figure 4 is a cross-sectional view of the structure of a light-emitting diode containing AlGalnP double heterogeneous and bonded GaP substrates. Fig. 5 is the light-emitting diode of the present invention. This diode contains a pair of different-sized paper tubes. The standard is applicable to the Chinese National Standard (CNS) Α4 specification (210 X 297 mm) ------------ ^ ------ ίτ ------ ^ (Please read the precautions on the back before filling out this page) Printed by the Ministry of Economic Affairs Central Bureau of Standardization's Beigong Consumer Cooperatives Printed by the Ministry of Economic Affairs Central Bureau of Standards' Employees Consumer Cooperatives 311287 A7 B7 V. Description of the invention () Quality and the combined substrate GaP coated with an ITO film. Fig. 6 is the current-voltage characteristic diagram of a piece of rainbow wafer and a piece of Gap substrate combined with ITO film at 500ti temperature for one hour by the technology of the present invention. Fig. 7 is a graph showing the current and voltage characteristics of a GaAs wafer and a GaP substrate combined with an ITO film and processed at 7001C for one hour using the technique of the present invention. The Y8 is based on the light-emitting diode of the present invention. The diode includes an AlGaInp double-heterostructure and a bonding substrate coated with an ITO film. The present invention provides a wafer bonding method to improve the luminous efficiency of the conventional light-emitting diode as shown in FIG. 2. The main purpose is to replace the opaque semiconductor substrate with a light-transmitting substrate. In order to make the substrate easy to combine and buffer the interface between the substrate and the double heterogeneous lattice, a light-transmitting conductive film is plated on the combined substrate as a buffer layer. The method of the present invention provides a simple and efficient production method to manufacture light emitting diodes with high light emitting brightness. In order to understand the feasibility of this method, a piece of negative conductive GaP transparent substrate coated with IT0 light-transmitting film and another piece of negative conductive GaP substrate were heated and combined at 500 ° C for one hour. It can be seen from Figure 6 that this combined substrate has a very good current-voltage linear response. Fig. 7 is the current-voltage characteristic diagram of another bonded substrate. The bonded substrate is made at 700 ° C and heated for one hour. The current and voltage also have a linear response. . At the same time, the combined chip has a crossbow of between 50 ~ i〇〇 / im, which is more applicable to the Chinese National Standard (CNS) A4 specification (21〇x297mm) than other paper standards. ---- Outfit ------- Order ------ " (please read the notes on the back before filling in this page) A7 B7 _ Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs _ V. Inventions Explanation () The photodiode worm chip such as GaAsP / GaP has a gluteal curvature of 100 ~ 150 # πι, and the A1 GaAs red epitaxial wafer has a small curvature of 200 ~ 300Am. It must be noted that the light-transmissive conductive film in the interface must have good light-transmittance and conductivity, although ITO is used in this invention, other materials with similar characteristics, such as CTO (Cadium-Tin-Oxide) The film can also play the same role. The brightness of the light-emitting diode can be improved by using this substrate bonding method. The light-emitting diode manufactured by the present invention has about the same luminous intensity as the traditional diode in FIG. 3, but avoids the need to grow. Difficulties with very thick AlGaAs substrates. As shown in Fig. 2, the double heterogeneity in the conventional light-emitting diode has a substrate with positive conductivity, on which a layer of AKJaAs with positive conductivity is first grown, and then a layer of undoped active AlGaAs is grown on it Layer, and finally grow AlGaAs with negative conductivity. As shown in FIG. 5 of the present invention, conventional diodes have first been selectively etched and removed by general etching techniques. The new substrate is also a GaP transparent substrate 51 with positive conductivity. The surface of the substrate is plated with a thin layer of ITO transparent conductive film 52, and then it is tightly clamped with the double heterogeneity removed from the substrate and placed on the substrate. In a high-temperature furnace with nitrogen or hydrogen, the wafer bonding can be completed by heating it at about 500 ° C for about one hour. Therefore, the structure of the present invention includes a positively conductive GaP transparent substrate 51, a thin ITO transparent conductive film 52, a positively conductive AlGaAs bottom layer 53, an undoped active AlGaAs intermediate layer 54, and a band Upper layer 55 of negative conductivity AlGaAs. Compared with the existing wafer bonding method, the method of the present invention can be applied to the Chinese National Standard (CNS) A4 specification (210X 297 mm) at a lower paper size ------------- ---- Subscribe ------ i (Please read the precautions on the back before filling in this page) Member of the Central Bureau of Economic Affairs of the Ministry of Consumer Affairs, Consumer Cooperation, 311287 A7 ----- EZ_ V. Description of invention ( ) Moderately complete the wafer bonding in a short time. The method studied by Z.L. Liau is generally carried out at a temperature of 830 eC, which takes about two hours. In the present invention, after adding a layer of light-transmitting conductive film, the wafer can be combined in 500 ° C, and it can be completed in only one hour. The lower operating temperature and shorter time can avoid impurity diffusion or interdiffusion of superlattice and quantum well structure layers and interlayer elements resulting in element degradation. In addition to easy production, the light-transmitting conductive film can act as a buffer layer to strain the difference in lattice structure between different materials. Because the film itself is not a crystalline layer, different lattice constants and thermal expansion coefficients of different materials can be buffered by its strain, and the combined wafers are also less susceptible to f-bending, so this technique can be combined with larger wafers. The method of the present invention can also be applied to the production of traditional diodes containing A1 GalnP as shown in Fig. 4, the GaAs substrate with negative conductivity is etched and removed, and then the GaP with negative conductivity plated with ITO film is coated Substrate substitution and bonding to complete the diodes as in the eighth figure. Although the dual heterogeneous materials are different, the same combination technique can still be used. The structure in FIG. 8 includes electrode contacts 81, a GaP substrate 82 with negative conductivity, a thin ITO transparent conductive film 83, an AlGalnP underlayer 84 with negative conductivity, undoped An AlGalnP active layer 85, and a positively conductive AlGalnP upper layer 86, a positively conductive thick window layer 87, and another electrode contact 88. In summary, the present invention is indeed a novel and practical utility invention, and it also has an industrial utilization value, and an application for an invention patent is filed according to law. —.1 I II I «^ 'vm II Brigade (#Read the precautions on the back before filling out this page) This paper scale is applicable to the Chinese National Standard (CNS) Α4 specification (2 丨 0 father 297mm)