TW311274B - - Google Patents
Download PDFInfo
- Publication number
- TW311274B TW311274B TW085108263A TW85108263A TW311274B TW 311274 B TW311274 B TW 311274B TW 085108263 A TW085108263 A TW 085108263A TW 85108263 A TW85108263 A TW 85108263A TW 311274 B TW311274 B TW 311274B
- Authority
- TW
- Taiwan
- Prior art keywords
- terminal
- resistive
- patent application
- item
- terminals
- Prior art date
Links
- 229910045601 alloy Inorganic materials 0.000 claims description 20
- 239000000956 alloy Substances 0.000 claims description 20
- 239000004065 semiconductor Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 6
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 4
- 229910052759 nickel Inorganic materials 0.000 claims 2
- 229910010293 ceramic material Inorganic materials 0.000 claims 1
- 230000013011 mating Effects 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 230000000875 corresponding effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical class [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 235000012054 meals Nutrition 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009182 swimming Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Emergency Protection Circuit Devices (AREA)
- Protection Of Static Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US53096895A | 1995-09-20 | 1995-09-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW311274B true TW311274B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1997-07-21 |
Family
ID=24115727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085108263A TW311274B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1995-09-20 | 1996-07-09 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH09121450A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
| TW (1) | TW311274B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI502721B (zh) * | 2013-02-05 | 2015-10-01 | Himax Tech Ltd | 晶片靜電放電保護裝置及其靜電放電保護方法 |
-
1996
- 1996-07-09 TW TW085108263A patent/TW311274B/zh active
- 1996-09-20 JP JP8249567A patent/JPH09121450A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI502721B (zh) * | 2013-02-05 | 2015-10-01 | Himax Tech Ltd | 晶片靜電放電保護裝置及其靜電放電保護方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09121450A (ja) | 1997-05-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW471144B (en) | Method to prevent intrusions into electronic circuitry | |
| US7497737B2 (en) | Subminiature electrical connector including over-voltage and over-current circuit protection | |
| TW589930B (en) | Electrostatic discharge protection device for a high density printed circuit board | |
| US7064423B2 (en) | IC module and IC card | |
| US20090190277A1 (en) | ESD Protection For USB Memory Devices | |
| US7061091B2 (en) | Surface mount package with integral electro-static charge dissipating ring using lead frame as ESD device | |
| WO2000047030A1 (en) | Electrostatic discharge protection package and method | |
| TW516166B (en) | Semiconductor integrated circuit device and the manufacturing method thereof | |
| JPS6227747B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| TW311274B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| TW383518B (en) | Electrical apparatus for overcurrent protection of electrical circuits | |
| TWI299516B (en) | Semiconductor device | |
| TW381348B (en) | Method for preventing CMOS wells damaging gate oxide | |
| TW304299B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
| TWI336124B (en) | Esd protection apparatus and method for forming an esd protection circuit | |
| TW299496B (en) | Electrostatic discharge protection utilizing varying length terminal elements | |
| TW200522090A (en) | Over-current protection apparatus | |
| TWI537835B (zh) | 記憶卡以及電子機器 | |
| CN207719393U (zh) | 便携式无线终端 | |
| JP2005222855A (ja) | レセプタクル | |
| TWI380741B (en) | Handheld electronic device with element for electro static discharge | |
| TW488055B (en) | Semiconductor device including an integrated circuit housed in an array package having signal terminals arranged about centrally located power supply terminals | |
| TW529215B (en) | IC carrying substrate with an over voltage protection function | |
| TWI495077B (zh) | 多埠式過電壓保護元件 | |
| JPS6297896A (ja) | Ｉｃカ−ド |