經濟部中央標準局員工消费合作社印製 A7 B7 五、發明説明（/ ) (一) 發明領域 本發明係揭露一種應用在半導體晶圖製程中，可偵測晶圓 在探針台上傾斜狀況之水平偵測裝置。 (二) 發明背景 按，在目前之半導體晶圓製程過程中，晶圓必須以探針或 其它長薄裝置，如導線，進行多次接觸性測試。在測試過程 中，晶圓必須穩固地置於測試台上通過平台上的小洞孔導以眞 空吸力而固定晶圓是目前一種常用的方式。 接下來，晶圓上之待測區在以探針進行接觸性測試前必須 先相對於探針做對準(align)。 在半導體元件之關鍵尺寸曰益減小之次微米製程技術，及 一元件所包含之單位元件數，愈來愈多之要求下，晶圓必須更 精準地相對於探針做對準，以達到由之而來愈來愈嚴謹之晶圓 ^平面度及傾斜程變之要求，先前技藝中尚未有有效地達成此要 求之方式。 有鑑於上述習用半導體晶圓製程過程中，在接觸性測試上 對準技術之不足，本發明乃提出改良式水平偵測器之裝置，以 用來測晶圓上不同區域及晶圓上元件中不同位置之待測區方位 及其水平傾斜角度大小。 發明之簡要說明： y 本發明之主要目係提供一種改良式水平偵測器裝置，用來量測 待測晶圓之水平傾斜程度。 本發明之另一目的係提供一種配備有變焦鏡頭以爲在量測晶圓 不同區域時提供不同之焦深之改良式水平偵測器裝置。 本發明之另一個目的係提供一種可變換視場大小以配合不同之 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） ----裝------訂 (請先聞讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 _____B7_ 五、發明説明（θ) 晶圓量測區域之改良式水平偵測器裝置。 在使用本發明之量測裝置時，該視場大小可以依狀況做最適當 之選擇，而達到提高量測之精確度，進而提增產品良率之目的。 圖示的簡要說明： 圖la爲傳統技藝中，水平方向探針結構與待測斜面之空間配置 圖。 圖lb爲圖la在y、z平面之投影圖。 圖lc爲圊la在探針結構未觸及待測物件時在X、z平面之投影 圖。 圖2a爲晶圓在使用本發明之水平偵測器裝置對準時之平面圖。 圖2b爲在應用本發明時之一視場與所視之元件之關係圖。 圖2c爲本發明中裝備有變焦鏡頭於水平感測器上的雷射干量測 系統。 圖3a爲具有兩不同高低表面之兩區域之元件平面圖。 圖3b爲圖3a之剖面示意圔。 圖4a爲本發明中經由變焦鏡頭投射雷射光束至圖3a全區域之視 場示意圖。 圖4b爲本發明中經由變焦鏡頭分別投射雷射光束至圖3a之兩分 割區域而形成之視場示意圖。 發明之詳細說明： 請參閱圖2a所示係爲晶圓在使用本發明之水平偵測器裝置 進行對準之平面圖，其中在晶圓(60)待測元件(65)上方者即爲 分別以4支手臂(42、44、46、48)連結之4組探針(41、43、 45、47)裝置。由圖2c中可以看出，晶圓(60)被置於一可依圖2a 所示之x-y方向移動之平台(70)上，再加上圖2c中所示用以對準 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） ----裝------訂 (請先閱讀背面之注意事項再填寫本頁) c - r ·* 、4 c - r ·* 、4 經濟部中央標準局貝工消費合作社印製 A7 五、發明説明（)） 之雷射干渉系統。 即構成本發明所揭露之水平偵測器裝置，圖2c中雷射系統 之零件(81)、（83)、（85)及(87)即被分別包置於圖2a所示的(41、 43、45、47)之中。 置於晶圓(60)上方之鏡頭(80)所形成之視場大小(50)及待測 元件(65)之關係可由圖2b看出。 根據習用技術之對準方式係爲一具有基準鍵(fiducial mark) 之光罩(mask)經主鏡頭成像至晶圆(60)上之特定區域。以在晶 圓上曝得所欲圊像。在晶圓(60)上，我們預先做好了兩組和x-y 平台呈45度角的對準鍵(alignment mark)，其方向即同於園2a中 之P-Q方向，亦即和手臂(42、44)同軸，在平台沿x-y方向移動 時基準鍵經主鏡頭呈像於對準鍵上而組合成之合成影像反射回 雷射系統而形成干圖形，晶圓與光罩是否對準之空間關係可以 由此干渉圖形產生之信號而得。在精確對準之後，晶圓一特定 表面細微屈折，高低起伏以及傾斜度皆均可以由此干渉信號而 得0 如圖2c所示，在習知技術中，一由光源(1〇〇)發出之參考光 束(90)分別藉光織(101Χ10Γ)之引導沿路徑(42)及(44)抵達主鏡 頭，再沿圖2a路徑(48)及(46)行進。在此過程中，參考光束會 分別行經一對參考光學平板(91)和(9Γ)，再通過一對參考光柵 (93)和(93')而分別抵達4像素感測器(quad cells)。 又，另有兩束量測光束(94)、（94')分束分出，而直接抵達 晶圓上之待測區(65)，此量測光束由待測區反射出來再分別依 序通過參考平板及參考光柵(95)及(95')，最後照射至4像素感 測器(quad cells)(97)和(97’)上。 (請先閲讀背面之注意事項再填寫本頁) 裝· 訂 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 經濟部中央標準局員工消費合作社印製 A7 _____B7 五、發明説明（p) 如圖2c所示，4像素感測器所測得之信號可以藉由參考雷 射光束(98)和量測雷射光束(96)和量測光(94')耦合而成。由各別 零件(81)、（83)、（85)、（87)形成之信號再被導入分析器(99)以 作爲分析之用。 在習知技術中，如圖2a-2c所示之視場大小不可隨需要而 變。但是如圖3a所示，在實際應用上，晶圓(200)上會存在二種 不同橫寬之視場(21〇)和(220)，甚或如圖3b中之長寬均不同的 視場。 此種狀況帶出現在含有週邊電路之動態隨機存取記憶體 (DRAM)及靜態隨機存取記憶體(SRAM)，或中央處理器(CPU) 中，此類電子元件中常包含有不同長寬之視場之單位元件。 因此，如使用本發明揭露之技藝，水平感測器之視場可以 晶圓上不同區域之長度來決定，同時，此感測器之視場大小可 以調整而使鄰近二區域之邊緣不會彼此重疊，如圖3a中之虛線 (211)、（221)標示之非重叠區即是。 在先前技藝中，視場大小無法變化，因此由雷射干渉儀量 而得之平均高度易於在晶圓面上平面高低相去較大之區域造成 量測値的不準，而降低產品良率，針對此缺失，本發明之一主 i/要特徵即是在圖2c中之光柵(95)旁加置一變焦鏡頭(92)，因此 在晶圓上不同區域之視場以及晶圓上在不同元件區所需之水平 測器之景深均可以由調整變焦鏡頭之焦距而得。 圖4a及4b中之可調整的雷射光束92'、92"、92"’即爲由變焦 鏡頭所形成之不同視場之表現。又，本發明所揭露之變焦鏡頭 並可以沿前述光束之光軸縱向調整以取得特定區域之適爲焦 ，深，並可以沿光束之法面做橫向移動以配含1¾之光束大小或平 -----TL.I1.1{裝------訂 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消费合作社印製 A7 B7 五、發明説明（_Γ) 面寬度。 在圖4a中，雷射光束(92’)入射於包含有如圆3a中的兩種區 域(210)、（220)之表面。一包含區域(210)、（220)中之typical tingh point之假想面相對準水平面呈Γ角之傾斜，如果此P '値 大於前一步驟所得之角β ”，那麼在圖4a中之雷射光束直徑 100’可藉著改變圚2c變焦鏡頭(92)之焦距來調整，直到調整到 找到一合宜之傾斜角P ”。舉例來說，此可爲對應於圖3a中區 域(210)的圖4b中之光束直徑100"。而在圖4b中之具直徑100" 之光束92”爲對應爲在區域(220)中之微小或無傾斜角之表現， 亦對應於圖3b中之等高區。然而，在晶圓上任何平面度之影響 /皆會被列入考量，以做爲修正β ’的參考，依據此原則，視場可 ί依進行探針測試之不同區域大小之需要而改變，以減少量測上 \ 的不準，達到提高良率之目的。 綜合以上所述各項，本發明揭露在習用技藝中加上電動式 變焦鏡頭的應用，使得焦深以及視場均可依需要作一調整。上 述之變焦鏡頭若可沿兩軸移動，則不僅可依晶圓之地形高低來 選擇最合適之視場大小，更可以精確地求得最佳景深。由是， 一種改良式步進和對準方式於焉完成。 並且，由於其具備有可變視場之特性，本裝置並可用來探 索整個晶圓面，以找尋可爲下一製程步驟使用之最佳景深。並 可將習用技藝中只可用於固定元件大小的視場區域循序式對準 方式(field-to-field local alignment)，擴大爲可用在具有不同大小 元的的晶圓上。 以上係例用最佳實施例來閱述本發明，而非限制本發明。 並且，熟知半導體技藝之人士皆可瞭解，適當而做些微的改變 —----Ml·—r._1.—(裝 — — (請先閱讀背面之注意事項再填寫本頁) 訂 本紙張尺度適用中國國家樣準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（/) 及調整，仍將不失本發明之要義所在，亦不脫離本發明之精神 及範圍。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） ------..--hll.-(裝------訂 (請先閲讀背面之注意事項再填寫本頁)A7 B7 printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (/) (1) Field of the invention The present invention discloses an application in the semiconductor wafer patterning process that can detect the tilt of the wafer on the probe table Level detection device. (2) Background of the Invention According to the current semiconductor wafer manufacturing process, the wafer must be tested multiple times with probes or other long and thin devices, such as wires. In the testing process, the wafer must be placed firmly on the test table through the small holes on the platform to guide the vacuum suction and fix the wafer is currently a common way. Next, the area under test on the wafer must be aligned with the probe before the probe is used for the contact test. With the ever-increasing requirements of the sub-micron process technology that reduces the critical size of semiconductor devices, and the number of unit elements contained in a device, the wafer must be more accurately aligned with the probe to achieve As a result, more and more rigorous wafer ^ flatness and tilt range requirements have not been achieved in the prior art. In view of the shortcomings of the alignment technique in the contact test during the conventional semiconductor wafer manufacturing process, the present invention proposes an improved level detector device for measuring different areas on the wafer and components on the wafer The azimuth of the area to be measured and its horizontal tilt angle at different locations. Brief description of the invention: y The main purpose of the present invention is to provide an improved level detector device for measuring the horizontal tilt of the wafer to be measured. Another object of the present invention is to provide an improved level detector device equipped with a zoom lens to provide different depths of focus when measuring different areas of a wafer. Another object of the present invention is to provide a field of view that can be changed to fit different paper sizes and is applicable to the Chinese National Standard (CNS) Α4 specification (210Χ297mm) ---- installed ------ ordered (please first Read the precautions on the back and fill in this page) A7 _____B7_ printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Invention Description (θ) An improved level detector device for the wafer measurement area. When using the measuring device of the present invention, the size of the field of view can be optimally selected according to the situation, so as to improve the accuracy of the measurement and thereby increase the yield of the product. Brief description of the figure: Figure la is the space configuration diagram of the horizontal probe structure and the slope to be measured in the traditional technique. Figure lb is a projection view of Figure la in the y and z planes. Fig. 1c is a projection view of Xla in the X and z planes when the probe structure does not touch the object to be measured. Figure 2a is a plan view of a wafer when aligned using the horizontal detector device of the present invention. FIG. 2b is a diagram of the relationship between a field of view and the components viewed when the present invention is applied. 2c is a laser dry measurement system equipped with a zoom lens on a horizontal sensor in the present invention. Figure 3a is a plan view of a device with two regions with two different height surfaces. Figure 3b is a schematic cross-sectional view of Figure 3a. Fig. 4a is a schematic view of the field of view of projecting a laser beam through a zoom lens to the entire area of Fig. 3a in the present invention. Fig. 4b is a schematic view of the field of view formed by projecting a laser beam through a zoom lens to the two divided regions of Fig. 3a in the present invention. Detailed description of the invention: Please refer to FIG. 2a which is a plan view of the wafer being aligned using the horizontal detector device of the present invention, wherein the wafers (60) above the device under test (65) are respectively 4 sets of probes (41, 43, 45, 47) connected by 4 arms (42, 44, 46, 48). It can be seen from FIG. 2c that the wafer (60) is placed on a platform (70) that can move in the xy direction shown in FIG. 2a, plus that shown in FIG. 2c for aligning the paper size. China National Standard (CNS) Α4 specification (210Χ297mm) ---- installed ------ ordered (please read the precautions on the back before filling this page) c-r · *, 4 c-r · * 4. The A7 laser printing system was printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. That constitutes the level detector device disclosed in the present invention, the parts (81), (83), (85) and (87) of the laser system in FIG. 2c are respectively packaged in (41, 43, 45, 47). The relationship between the size of the field of view (50) formed by the lens (80) placed above the wafer (60) and the device under test (65) can be seen in Figure 2b. The alignment method according to the conventional technique is that a mask with fiducial mark is imaged by the main lens to a specific area on the wafer (60). In order to expose the desired image on the crystal circle. On the wafer (60), we have prepared two sets of alignment marks at an angle of 45 degrees to the xy platform in the same direction as the PQ direction in the park 2a, that is, to the arm (42, 44) Coaxial, when the platform moves in the xy direction, the reference key is reflected on the alignment key by the main lens and the combined image is reflected back to the laser system to form a dry pattern. The spatial relationship between the alignment of the wafer and the reticle It can be obtained by interfering with the signal generated by the pattern. After precise alignment, a specific surface of the wafer is slightly folded, and the high and low fluctuations and inclination can be obtained by interfering with the signal. As shown in FIG. 2c, in the conventional technology, one is emitted by the light source (100〇) The reference beam (90) reaches the main lens along the paths (42) and (44) by the guide of the optical weave (101Χ10Γ), and then travels along the paths (48) and (46) of FIG. 2a. In this process, the reference beam will travel through a pair of reference optical plates (91) and (9Γ) respectively, and then pass through a pair of reference gratings (93) and (93 ') to reach a 4-pixel sensor (quad cells). In addition, another two measuring beams (94) and (94 ') are split into beams and directly reach the area to be measured (65) on the wafer. The measurement beams are reflected from the area to be measured and then sequentially Through the reference plate and reference gratings (95) and (95 '), finally illuminate the 4-pixel sensors (quad cells) (97) and (97'). (Please read the precautions on the back before filling out this page) The size of the paper used for the binding and binding is in accordance with the Chinese National Standard (CNS) A4 (210X 297mm) A7 _____B7 printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (P) As shown in Fig. 2c, the signal measured by the 4-pixel sensor can be formed by coupling the reference laser beam (98) and the measurement laser beam (96) and the measurement light (94 '). The signals formed by the various parts (81), (83), (85), (87) are then introduced into the analyzer (99) for analysis. In the conventional technology, the size of the field of view as shown in FIGS. 2a-2c cannot be changed as needed. However, as shown in Figure 3a, in practical applications, there will be two fields of view (21〇) and (220) with different lateral widths on the wafer (200), or even different fields of view as shown in Figure 3b. . This situation occurs in dynamic random access memory (DRAM) and static random access memory (SRAM) or central processing unit (CPU) containing peripheral circuits. Such electronic components often contain different lengths and widths. The unit element of the field of view. Therefore, if the technique disclosed in the present invention is used, the field of view of the horizontal sensor can be determined by the length of different regions on the wafer, and at the same time, the field of view of the sensor can be adjusted so that the edges of the two adjacent regions will not be mutually Overlap, as shown by the dotted lines (211) and (221) in Figure 3a, are non-overlapping areas. In the prior art, the size of the field of view cannot be changed, so the average height measured by the laser interference instrument is likely to cause inaccurate measurement values in areas where the plane height on the wafer surface is relatively large, and reduce the product yield. In response to this lack, one of the main i / essential features of the present invention is to add a zoom lens (92) next to the grating (95) in FIG. 2c, so the field of view in different areas on the wafer and on the wafer are different. The depth of field of the level gauge required in the component area can be obtained by adjusting the focal length of the zoom lens. The adjustable laser beams 92 ', 92 ", 92 "' in Figures 4a and 4b are the performance of different fields of view formed by the zoom lens. In addition, the zoom lens disclosed in the present invention can be adjusted longitudinally along the optical axis of the aforementioned beam to obtain the proper focal depth and depth in a specific area, and can be moved laterally along the normal surface of the beam to match the beam size or flatness with 1¾- ---- TL.I1.1 {installed ------ ordered (please read the precautions on the back before filling in this page) This paper size is applicable to China National Standard (CNS) A4 specification (210X297mm) Ministry of Economic Affairs A7 B7 printed by the Staff Cooperative of the Central Bureau of Standards. 5. The width of the invention description (_Γ). In Fig. 4a, the laser beam (92 ') is incident on the surface containing two regions (210), (220) as in the circle 3a. An imaginary plane containing the typical tingh point in the regions (210) and (220) is inclined at an angle of Γ relative to the quasi-horizontal plane. If the value of P 'is greater than the angle β obtained in the previous step, then the laser in Figure 4a The beam diameter 100 'can be adjusted by changing the focal length of the 2c zoom lens (92) until it is adjusted to a suitable tilt angle P ". For example, this may be the beam diameter 100 " in FIG. 4b corresponding to the region (210) in FIG. 3a. The beam 92 "with a diameter of 100" in FIG. 4b corresponds to the performance with a small or no tilt angle in the area (220), and also corresponds to the contoured area in FIG. 3b. However, on the wafer any The influence of flatness will be taken into consideration as a reference to modify β '. According to this principle, the field of view can be changed according to the needs of the different areas of the probe test to reduce the measurement. It is not allowed to achieve the purpose of improving the yield. Based on the above, the present invention discloses the application of the electric zoom lens in the conventional skills, so that the depth of focus and the field of view can be adjusted as needed. The above zoom If the lens can move along two axes, it can not only select the most suitable field of view size according to the topography of the wafer, but also accurately obtain the best depth of field. Therefore, an improved stepping and alignment method is available. Finished. And because of its variable field of view, this device can be used to explore the entire wafer surface to find the best depth of field that can be used for the next process step. It can also be used only for fixing in conventional techniques Component size Field-to-field local alignment (field-to-field local alignment) is expanded to be used on wafers with different size elements. The above examples use the best embodiments to describe the present invention, not to limit the present invention And, people who are familiar with semiconductor technology can understand, make appropriate and slight changes —---- Ml · —r._1 .— (install— — (please read the precautions on the back before filling out this page) The paper scale is applicable to China National Standards (CNS) A4 specification (210X297 mm). The A7 B7 is printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economy. It does not deviate from the spirit and scope of the present invention. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) ------..-- hll .- (installed ------ ordered (please (Read the notes on the back before filling this page)