29714Κ Α7 Β7 經濟部中央榡準局員工消費合作社印製 五、發明説明（1 ) 本發明概言之係與夾持一工作件之靜電夾頭有闞，且 ，更詳言之，係與自一靜霄夾頭上鬆開一工作件（諸如一 半導晶片）之方法有關。 靜電夾頭係用於在許多不同埸合中夾持一工作件*範 圃從在一電腦繪圖器中夾持一張紙到在一半導晶片處理室 中夾持一半導體晶片。雖然靜霄夾頭之設計可變化，它們 均係根據施加一霣壓至夾頭中之一或一個以上而分別在工 作件和電極上引起相反極性電荷。相反霣極之間的靜霣吸 引力將工作件推向夾頭，俾扣留住工作件。 在半導體晶片處理設備中，靜電夾頭係被用來在處理 期間將晶片夾一支持座上。支持座可形成一霣極Μ及一使 用在蝕刻或化學蒸氣沈積（CVD)應用中之散热装置。更 詳言之，靜霣夾頭具有一層覆蓋一導轚基座的電介質材料 。在一 “單極”靜電夾頭中，電壓相對某一内室地面基準 被施加至導®基座。靜電力被建立於被夾緊的晶片和靜電 夾頭之間。當電壓被施加時，晶片被回歸於與電壓源相同 的地面基準。或者•電漿體可使晶片Μ地面為參考基準， 惟在形成於被夾緊之晶片和參考霣極處的電漿體外皮發生 某一電歷降。 為了在處理期間冷卻晶片，一惰性氣髖諸如氦被抽送 於晶與夾頭表面之間俾充作水冷夾頭之一熱傳導介質。 由於施加在晶片與夾頭界面的氦氣壓力，需要一相當高的 霣埸大小以產生夾緊晶片所需之靜電力。例如，一在15至 30托範圍之熱傳涵氣體壓力下運作之使用一氧化鋁電介（ 本紙張尺度適用中國國家標準（CNS ) Α4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝. —訂 線 經濟部中央標準局負工消費合作杜印褽 Α7 Β7 五、發明説明（2 ) 具有一約為10之介霣常數）質的靜霣夾頭需要一在·5ΧΐΟβ 至IX 10β V/CB範圃中之電埸大小。在晶片與夾頭之間的 真空間隙中的電埸高過電介質材料與真空之介電常數比的 程度。在此一實例中，該比率約為10至1;因此，一真空 間隙中之電場可比晶片表面之電埸大十倍。明確而言•所 形成之霣埸在真空間隙中可達1><1〇6至5父106 V/cm。 此一高電埸值可造成電介霣材料之充霄而可能阻止處 理後晶片之鬆開。在一理想的霣介質中•即•僅束縛電荷 ，高電場舍造成晶片與夾頭之間的表面充霣。造成此一充 電的機構是場致發射充電，此係由於減少位叠高度之高電 埸，即，克服晶片及/或夾頭表材料之功函數，使霣荷由 晶片隧穿至夾頭表面或反之，而成為可能。由場致發射所 造成之充霄量依相閫的表面材料功函數Μ及表面而定間之 界面的有效電場而定。由埸致發射充霣所生成之感應電場 永遠與施加之電場相反，減少淨霣埸以及夾頭與晶片之間 所生成的靜電力。但是•當施加之霣埸除去時•即夾頭電 壓設定成〇伏特•由於在夾頭表及晶片背面表面場致發射 充電所造成之存在電荷而有剩餘靜電力留下。因此*因剩 餘之靜電力必須被一櫬械晶片升降機構克服Κ將晶片從夾 頭移開而使得晶片之鬆開可能有困難。 高電場值舍造成其他導致增加的鬆開困難的充電行為 。例如，如果夾頭介電材料不是一種“理想”電介質•即 ，有一些未束縛電荷或“自由霣荷”存在，則自由電荷可 在施加之電埸影響下溧移通過霣介質材料。自由霣荷朝向 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐） ----------裝-----17-訂-------線 - ί < (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（3 ) 夾頭和晶片間之界面徙動，造成接近夾頭表面的自電荷 密度增加。依晶片背後與夾頭表面間之接觸轚阻而定，電 荷可能無法通過界面。结果是在電介質材料内之電荷接夾 頭電介質之表面積聚。此一電荷徙動現象依材料，時間* 溫度和霣場值而定。结果是在晶片與夾頭界面處的靜霄力 比理想霣介質之靜霄力有一有效之增加。由於極化電荷與 自由電荷助成靜電力•由於晶片背面上與«介質中之電荷 之間的分開距離的有效減少而發生力之增加。但是，當施 加電場被除去時，即，夾頭電壓設定為0伏特，因夾頭電 介質内Μ及晶片背部表面之徙動電荷存在而留下一剰餘電 荷。因此，剩餘靜霣力壻加晶片離開夾頭所需之物理力。 以上效果是在靜電夾頭操作期間發生而能影響鬆開一 晶片之能力的充電效果的兩個實例。事實上，兩種充電現 象在夾頭被操作之條件下可在一特定的靜霣夾頭上發生。 但是，埸致發射充電和霉荷徙動充電造成對抗的效果，即 ，埸致發射充電造成一相反於施加電埸方向之霣場，且霣 荷徙動充電造成一與施加電場相同方向的«埸。例如•在 低溫下（例如攝氏-10度）的高密度電漿體蝕刻程序中操 作的一由嘖塗罨漿體之陶瓷諸如厶1»〇3/以〇8霣介質所構 成之單極夾頭具有一支配性的場致發射充轚現象。場致發 射充電減少在處理期間的靜霄力且導致在除去施加靜電夾 頭霣壓之後的剩餘靜霣力。如果晶片用某種方法由靜罨夾 頭被除去，一種另外的電介質充霣發生。此一累積的充霣 效果持鑛至視晶片處理期間所使用環境條件而定的某一霄 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） - . 裝 i I訂J 旅 (請先閱讀背面之注意事項#-填寫本頁) 經濟部中央標準局貝X消費合作社印製 Α7 Β7 i'發明説明（4 ) 荷水平電荷胞和發生為止。 或者•如果同一夾顔在一較高溫度下（例如攝氏+30 度）以相同的環境條件操作，則電荷徙動通過霣介質支配 剩餘的充電程序。由於電荷徙動而造成的晶片與夾頭界面 之高電荷密度可增加施加之電場且以某種程度中和夾頭界 面處之場致發射充霄。靜電夾頭與晶片之間的有效鼋場係 因電荷徙動充電效果而增加。但是，一旦所施加的夾緊電 壓被除去，一剩餘之靜電力造成而抑止晶片自夾頭鬆開。 由於此一充電依時間，電埸強度和溫度而定•剩餘效果無 法預測。此外，剩餘電荷與力一晶片一晶片地增加直至某 一飽和條件達成為止。 因此，補要有一種能夠在任何環境條件下自靜霣夾頭 鬆開一晶片且不損傷硬體或被處理中之晶片的鬆開方法。 鬆開晶片之習知技術包括（1)調整施加之靜電夾頭電壓至0 且等待某一時期令晶Η與靜霣夾頭放(2)調整施加之 靜電夾頭電壓至另一固定電壓*等候某一時期令晶片夾頭 放電；（3)利用（1)或（2)接著»由一克服刺餘之靜霣力的 機械装置使晶片離開靜罨夾頭；或者（4)賴由在晶片與地 面間造成歐姆接觭而將晶片傳導性地接地。方法（1)* (2) 和（3)有未知且可能非常長的等待期間。另一方面，方法 (4)不可能在具有絕緣背部之晶片上工作且可能對晶片造 成裝置傷害。 習知除去霄荷之途徑的一項顯著缺點是它們不能完全 除去電荷而使得一些剩餘之靜電力留在晶片與夾頭之間。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 1 I I I I ^ 訂 J ~~ II 線 (請先閱讀背面之注意事項-S·填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（5 ) 此一剩餘靜電力爾要使用一相當大的櫬械力分開晶片與夾 頭。移開所需之力有些時候裂開晶片或以其他方式傷害晶 片。縱使晶片未被傷害，機械地克服剩餘靜霣力的困難性 有時造成晶片不可預期地由夾頭鬆落至一位置，由該一位 置難K利用一習知之浬輸自動儀器取回。 因此，需要有一種由一靜電夾頭鬆開一半導«晶片而 將晶片與夾頭表面間之剩餘靜霣力減至最小的方法。 迄今與習知技術相關聯的缺點由一創新的與一習知靜 霣夾頭一起使用的鬆開方法克服。本發明方法對一工作件 (例如一半導體晶片）施加一方向相反於靜電力（夾緊力 )之相當小櫬械力（鬆開力），該力將晶Η夾緊至夾頭表 面。此鬆開力可由一櫬械晶Η升降櫬構或賴由在晶片與靜 霣夾頭界面施加於晶Η背後之热傳遞氣«壓力而陁加。一 旦鬆開力被施加|夾緊電壓從起始夾緊電遯跨過〇伏特朝 向某一相反極性之電壓。由於電壓是由一極端至另一極端 ，夾緊晶片之靜電力係藉由観察晶片升降機構之提升力或 施加至晶片與靜電夾頭界面之氣體的流速（或者歷力）而 被監測。當夾緊電壓變化時提升力被監測其改變。依所使 用之提升力而定，力變化是熱傳涵氣體流速、热傳涵氣» Μ力或頂升桿之改變。 當這些力的指檷之一超過一臨界水平時*本方法判斷 剩餘靜霄力充分地小，即，由目前水平所產生之霣壜Μ及 夾緊罨壓之極性實霣上抵銷了剰餘靜電力，使得毋痛用一 過量的提升力即鬆開晶片。在當一機械力被判斷為充份地 本紙張尺度適用中國國家標準（CNS ) Μ規格（21〇Χ297公釐） 裝 I J— Ί n I 線 . . . ~ ^ (請先閱讀背面之注意事^%寫本頁) A7 ^_ 經濟部中央標準局員工消費合作社印製 B7_ 發明説明（6 ) 小的夾緊霣壓水平和極性時，即，當剩餘靜電力最小時， 夾緊電颳（現在是一鬆開霣壓）維持一定經過一特定期間 且接著晶片機械地與靜霣夾頭分離。由於刺餘之靜電力因 場致發射和電荷徙動充電效果的不可預期性質具有未知值 ，發明之方法可使一適合在任何剩餘靜電力值下鬆開的最 小鬆開力被靈活地決定。在最小靜電力下，由施加之鬆開 電颳所產生的電場實質上抵銷了由剩餘電荷所產生的電埸 Ο 為了進一步減小鬆開力，在每一晶片自夾頭被移開後 之後，使剩餘的電荷》由將靜電夾表面曝露於電漿體而放 電，即，本發明使用夾頭後處理。如此則剩餘電荷不合由 一晶片到另一晶片地積聚在夾頭表面上。 總之，雖然剩餘充電效果依晶片處理環境而有相當的 變化力本發明之方法靈活地缠應任何晶片處理環境以產生 一適當的鬆開電壓而將使晶片從夾頭移開所铕之鬆開力減 至最小。如此*因鬆開所致之晶片傷害減至最小且晶片能 迅速地由處理室移出，毋需等待剩餘電荷之放霣。 本發明之教示可藉由與附圖一同考慮Μ下的詳细說明 而很快地被瞭解。 第1圖為一部分以簡圖形式表示之一習知半導體晶片 製作處理室的斷面鬮，其包括一本發明可被應用的習知靜 電夾頭； 第2_係用來使夾頭自第1圖之靜電夾頭鬆開之方法的 流程圖； 本紙張尺度適用中國國家橾準（CNS ) Α4規格（210Χ297公釐） 經濟部中央標準局員工消費合作社印製 五、發明説明（7 ) 第3圈為一在攝氏-10度下操作且使用夾頭後處理之夾 頭的鬆開電壓及氦流速對時間圖； 第4圈係一在攝氏-10度下操作且未使用夾頭後處理之 夾頭的鬆開電壓及氦流速對時間圖； 第5圖係一在攝氏+10度下操作且未使用夾頭後處理之 夾頭的鬆開電壓及氦流速對時間画；Μ及 第6圓係一在攝氏+30度下操作且使用夾頭後處理之夾 頭的鬆開霣壓及氦流速對時間圖。 為容易了解起見，在可能情況下使用相同的參考數字 表示圃式中共同的相同元件 第1圖繪示一逋於支持並Μ靜霣將一欲被處理之工作 件，諸如一的半導體晶片，固定在一高密度電漿體反應室 內之支持座上的習知睜霣夾頭。欲詳细了解霣漿體反應室 及其處理晶片之操作，謓者應參看1 992，9，8申請之專利 申請案號0 7/ 94 1,507中的匾式及詳细說明•在本文中列 入參考。該申請案揭露一由Santa Clara, California之 Applied Materials公司所製造的偏懕，高密度霣漿嫌反 應室。此外，一可與本發明之鬆開方法一起使用之習知靜 «夾頭係揭霓於1994, 9, 27發證予本案之受謅人的美國 專利第5,350,479號中，且其揭露内容列於本文中供作參 考。 第1圖纗示瞭解本發明鬆開一晶片之方法的那些霣子 霣路以及一習知霣漿體反應室之櫬械組件。霣子電路包括 一電腦控制糸統100，一習知DC電颳供給源102，κ及RF發 (請先閲讀背面之注意事填寫本頁) 裝· 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 10 B7 '^發明説明（8 ) 生器1〇4以及匹配電路106和108。DC霣懕供給源將夾緊霣 壓經遇一低通《波器110供給至靜轚夾頭。此濾波器將DC 電壓源102與RF發生器104隔離。RF源功率和RF偏壓功率係 各別與經由匹配網络106和108產生一或一種K上RF頻率之 習知RF發生器104耦合，源功率係耦合至一霣感天線112, 且偏壓功率係耦合至支持座114。RF偏懕功率和DC電壓之 一地面基準為一接地上極板116。DC電壓源1ϋ 2供應正1000 伏特Μ生成一靜電地保持一晶片118在支捋座114上的電埸 。當欲釋放（或“鬆開”）晶片時· DC霣壓源由一賁行下 述之本發明方法的電腦控制系統100控制。 經濟部中央榡率局員工消費合作社印製 電漿體反應室5 0應用霣感耦合之RF霣源Μ產生並維持 一高密度、低能虽電漿«120。RF偏壓功率係經由晶片118 及靜電夾頭122被電容耦合至霣漿«。藉由第1圈所示之结 構，電漿體密度被RF源功率控制·且離子能量被RF偏壓電 源獨立地控制。结果是在晶片118處的一均一高密度、低 電子溫度霄漿體120其離子能量可控制為約15eV至數百eV 。此一结構容許Μ最小的充霄降级及最小的高能粒子損壞 蝕刻晶片。 雖然上述的霣漿反應室提供一高氧化物蝕刻速率，其 亦要求某些嚴格的硬體條件，尤其是在靜霣夾頭12 2方面 。詳言之· RF偏壓功率必須均一地耩合至晶片及霣漿體。 具有一高密度、低電子溫度霣漿體之陰極_套124非常薄 ，通常低於一奄米*且陰極護套之軍位面積阻抗主要是電 阻性的且十分低。對於具有典型霣阻率之晶片而言•除非 本紙張尺度適用中國國家標準（CNS ) A4規格（2丨OX297公釐） 11 經濟部中央標準局員工消費合作社印裝 Α7 Β7 五、發明説明（9 ) RF偏壓功率非常均一地被耦合至晶片，否則離子/電子流 和離子能董將不均一。除了均一«耩合的問題Μ外*需要 使晶片實質上均一地熱耦合至冷卻之靜《夾頭。加在晶片 上的热負載非常大。例如•在一典型的280 0瓦特之RF源功 率Κ及1 400瓦特之RF偏壓功率下，約2kW之熱必須連續地 從晶片上除去。 為提供此一均一之耦合與热冷卻·支持座114和靜電 夾頭122包括一具有直接液體冷卻的整«鋁塊。此一液體 冷卻是由進入支持座下部之一入口，並流經冷卻通道（未 示於圜中），經一開口由支持座出去的冷卻水所提供。 一電介質材料之平滑層126係被鄰接於支持座114之平 滑上表面而接觸晶片之下面。電介質材料之曆126,除了 四個升降銷孔（其中兩個Μ參考數字128指示）之外•均 —地覆蓋支持座114之整個上表面。支持座最好是由一鋁 塊車削而成，該鋁塊被修整成在上下表面之間的平滑度與 平行度少於0.001英吋（25微米）。接著孔係如下文所述 地在支持座上鑽出。支持座之上表面係被噴砂以改進附著 力•接著一約0.Q2Q英吋（0.5毫米）厚之氧化鋁或氧化鋁 /氧化钛複合物陶瓷霣介質曆在支持座之上面被霣漿體嗔 塗。嗔塗層接著被研磨而達成約Q.Q1Q英吋（250撤米）霣 介質塗曆厚度，平滑度為0.5微米。笛介霣層與下面的鋁 塊形成靜電夾頭122。 一冷卻氣體*諸如氦，係由供姶源131經一導管130縯 至支持座並分佈至支持座内七個軸方向氣體導管或空腔 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X 297公釐） ---------裝— (請先閱讀背面之注意事^4填寫本頁) 訂·- 12 經濟部中央標準局員工消費合作杜印製 Α7 Β7 五、發明説明（10 ) 138之每一者内。每一専管直徑約為0.3英吋（7.5奄米） 。一導管係在支持座之中心軸，而其他六個専管平均間隔 地環鐃支持座周圃且稍微朝内。導管未穿透電介質曆。事 實上，導管最好未一直延伸到支持座上表面，而在每一導 管之上端留下一鋁之薄層*較佳約為0.015英吋（ 380微米 )厚。每一導管可藉由從支持座塊下面平底擴孔成一孔而 形成。 冷卻氣艚係經由多數孔眼132由每一導管或空腔被输 送霣介質層之表面*各孔眼在直徑上小於導管。較佳者係 利用笛射打孔造成直徑約0 . 0 0 6至Ο.ΟΟδ英吋（150-200毫 米）之穿過電介質層和横置於每一導管孔眼上方之薄鋁層 。有數個此種孔眼被成形於每一氣«専管或空腔的上端。 為了由孔眼分佈冷卻氣體遍及霣介霣層之上表面，一種一 個或一個以上的氣體分配凹槽系铳可被形成在上表面中。 一單一凹權可貫穿任何數目的的這些孔眼，但每一孔眼與 至少一個凹槽連通。此等凹槽應延伸及於大部分的電介質 表面Μ使得當一半導體晶片或其他工作件被放在靜霣夾頭 上時，冷卻氣«將向上流經導管、經過孔眼、經過分配凹 槽而進入基底下面與電介質層上表面之間的撤小間隙空間 。一公稱氣體流速（泄漏速率）係於 一相當小量的热傳遞氣體由晶片下方流至室中時被達成。 在習知之處理室搡作中，一自動儀器臂（未示於圖中 )移動一晶片經一狹縫閥進入室中。此自動儀器將晶Η放 在升降銷134之尖端•該晶片此時被氣力升降機構136舉起 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） , 裝 _ 訂一- ^線 f ( (請先閲讀背面之注意事項再填寫本頁) 13 經濟部中央標準局負工消費合作杜印製 A7 B7 五、發明説明（11 ) 俾突出在靜霣夾頭122頂部2至5公分。在電腦控制系統100 之控制下的氣力升降機構接著下降升降銷134而使得晶片 落在夾頭的表面上。晶片下降時間典型地為1至3秒。 一旦升降銷已將晶片下至夾頭上，霄漿體即被引發， 即* “觸發”氣體被供給至電漿體室且RF源功率被供給至 天線112。一旦系统觸發電漿體，電腦控制系統將DC夾緊 電壓加至夾頭上且將热傳遞氣體施加至晶片與夾頭界面。 夾緊電壓造成負與正電荷而分別積聚在晶片和夾頭電極的 表皮面。霣荷之數量與電壓和晶片與夾頭電極之間的電容 乘積成正比。 在晶片掉落在夾頭之上方霄介霣上之後，升降銷繼績 下降至支持座中。在晶片與夾頭電極上的相反極性電荷造 成一靜電吸引力*該靜電吸引力將晶片壓向夾頭之上面。 夾緊電壓被設定成一足夠高之值，俾在晶片和夾頭之間造 成一能夠防止在處理室內繼鱭的製程步驟中晶片移動之靜 霣力。晶片因此可被固定地保持在夾頭上而謂之被夾緊。 在晶片被夾緊之後，一或一個Μ上之半導體製作程序 步驟在室中被實施，諸如在晶片上沈積或蝕刻薄膜。對於 應用霣漿體之製程而言，RF供應源選擇地施加RF功率至天 線112,以及陰極支持座與在晶片上方區域產生一電漿體 120的接地陽掻之間。電漿體在晶片與地面之間提供一専 電通路。但是，由於電子和正離子之遷移率差，出現一横 跨電漿體之DC電壓降而使得晶片相對於地面偏負。如果夾 緊電壓讀送為正•晶片與夾頭電極間之總DC電颳將為晶Η 本紙張尺度逋用中國國家標準（CNS ) Α4規格（210Χ 297公釐） 14 ^ ^ 裝 .—訂I ^旅 (請先閲讀背面之注意事項^:填寫本頁) A7 B7 五、發明説明（12) 偏®和夾頭霣®之和·因此晶片偏壓增加扣留晶片之靜電 力0 請 先 閲 背 面 之 注 意 事 項一 填 本衣 頁 訂 在完成半導«製作程序步驟之後，氣力升降櫬構升高 升降銷而將晶片上升於夾頭上方，Μ使晶片可藉由自動儀 器之運輪由室中被移出。在升降銷能夠升高晶片之前，晶 片必須被電力地鬆開，亦即，留住晶片於夾頭上的靜電力 必須被除去或抵銷。依習知技術，夾緊《Κ鯛送被闢閉， 且夾頭霣極和晶片二者均接地以除去各別的電荷，該®荷 係已在先前的施加夾緊電壓給夾頭電極期間積聚在夾頭罨 極和晶片上者。晶片習知地是由將RF電源留在一減低之功 率水平而接地，以維持一提供由晶片至室之接地壁之導電 通路的電漿艚。但是*如上文所討論，在使用一習知之鬆 開方法之後*由於電荷徙動及/或埸致發射充電而使一剩 餘霣荷仍留在晶片和夾頭上。如此*先前技S之鬆開方法 可能需要過度的物理力Μ將晶片自夾頭移開。 線 經濟部中央標準局員工消費合作社印製 本發明之由靜霣夾頭鬆開晶片之方法係描述於第2圈 之流程圈中。此方法大抵上以一執行於«臈控制系铳上的 軟體程序完成。鬆開方法200開始於步« 202且Μ步驟204 纽鑲。在步》2 04 · —提升力被腌加於晶Η。此一提升力 之值相當小且不畲使晶片自靜電夾頭表面上移走，而是被 使用作一自夾頭移開晶片所需之力的測量工具。在步驟 206 *本方法測董此一提升力。典型地，此係薄由使用一 附在升降櫬構上的測力計測定由四銷豳加在晶片下面的提 升力而完成。另一番擇且為較佳者，提升力可由熱傳遞氣 本紙張尺度適用中國國家標準（CNS ) Α4规格（210Χ297公釐） 15 A7 B7 經濟部中央標準局負工消費合作社印裝 五、發明説明（13 ) 體之壓力被施加且此力利用一在氧嫌供給源内之流虽計監 測（例如一氣體流董監示器）。假定一相當低的氣體漏出 速率經過晶片與夾頭界面，提升力係與攜帶氦至靜電夾頭 之導管中的氣體壓力成正比，或與氣體流速成反比。因此 ，颳力或流速之變化表示將晶片夾緊至夾頭之剩餘靜電力 變化。更詳言之，用一恆定之氣體壓力施加至晶片之背面 ，當刺餘靜電力《由一腌加夾緊電壓之抵銷效果而減少時 •晶片將稍微由夾頭表面上升造成流速上之一短暫增加以 及氣«懕力上之一相應滅少。此現象稱為一流動嗝爆（ flowburp) ° 在步琢2 08,本方法減少夾緊電壓一預先規定之量。 典型的減少董約為100伏特· Μ—約+1000伏特之夾緊電壓 開始。在步驟210*於夾緊霣歷減少之後，提升力再度被 測最。在步驟212·所測得之提升力與一臨界值水平比較 。如果提升力已降至臨界值水平Μ下，方法進行至步驟 214。如果提升力尚未降至臨界值水平Μ下*程序沿路徑 218進行且回到步驟208，其中夾緊轚壓再次Μ預設之量減 少•例如10 0伏特。因此，鬆開方法20 0包括由步驟2 08， 210, 212和路徑2 18所組成的鬆開回路，其中夾緊霣壓反 覆地Μ預設之霣減少直到由升降銷上之測力計所指示或由 熱傅遞氣體之流速指示*所测得之提升超過一預定之臨界 值為止。較佳地•此臨界值為一預先規定之流速且本方法 在測得之潦速超過預先規定之臨界流速時退出鬆開回路。 增加氣體流速（流動嗝爆）發生於所施加之電壓造成一實 請先閱讀背面之注意事項4,4,寫本頁 -裝· -訂 旅 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 16 五、 發明説明（14 ) A7 B7 經濟部中央橾準局貝Η消費合作社印製 質上抵銷刺餘靜電場之罨壜時。一旦抵銷，剩餘之靜霣力 實際上被消除且氣艚懕力稍將晶片由夾頭上升造成流動嗝 爆。 當步驟212之詢問被肯定回答，本方法進行至步驟214 *於該步《目前之夾緊電®水平被維持一定達一預定期間 ，通常為五秒。在預定之時間已消逝之後，升降銷在步驟 21 6被用來物理地由靜電夾頭表面鬆開晶片。 由於移開晶Η所補要的鬆開力以及抵銷刺餘靜霣場所 需要的鬆開電壓為未知者，本發明之方法是可調整的以使 得此方法決定一有效抵銷任何殘留在夾頭與晶片界面之剩 餘靜電埸的鬆開電壓。如此，本發明方法可被用來實時鬆 開工作件而毋拥完成任何預先建立或預先確定的测量。本 發明方法之效力經由已利用本方法完成之實驗结果證明。 第3, 4· 5和6圔鑰示在一反應室内於各種環境下利用本發 明方法的實驗结果。在各個實驗中·夾緊電壓係以100伏 特之增董從一+ 1000伏特之起始夾緊霣懕減低。一在晶片 之夾緊與處理期間使用一15托之热傳遞氣《壓力。為了鬆 開晶片，典型地，熱傳遞氣體壓力由約15托減低至約3至5 托。在此一低壓力下，當達到最佳鬆開壓力時，晶Η將不 會從夾頭跳開。對於疽些特別的實驗而言，施加一提升力 之機構為熱傳通氣體懕力（例如氦壓力）•且澜定一最小 鬆開壓力之開端為測定在一 3 SCCM之氦中的流速增加。此 流速上之增加被稱為流動嗝爆，其表示扣留晶Η於夾頭上 之一減少靜霣力。在第3圖中，靜電夾顗表面起初睸露於 本紙張尺度適用中國國家標準（CNS ) Α4規格（210 X 297公釐） 17 -17- 請 先 閱 讀 背 之 注 意 事 項 •Τ 裝 訂 線 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（15 ) 霄漿體Μ將先前被處理之晶片所留在靜電夾頭表面上之刺 餘電荷放電。此被稱為夾頭後處理。此例之夾頭溫度為攝 氏-10度。在此一環境中，靜電夾頭之霣介質Κ 一大致上 理想的電介質操作。依此，埸致發射充電為晶片與靜電夾 頭表面之間剩餘靜電力的最主要原因。如第3_中所示， 夾緊霄壓3QQ是從一+1000伏特（左手檷度308) M1QQ伏特 之等级減少，直至流速302 (右手檷度310)之變化（流動 嗝爆304)被探測到為止。在此點夾緊霣壓被維持一定歷 經約6秒鐘之期間•且接著晶片藉由移動升降銷使其銜接 晶片並將晶片從夾頭提升而被物理地鬆開（於30 6)。流 動嗝爆在此室瑁境内發生的霣壓水平為+100伏特。 第4圖繪示當晶片和靜電夾頭在相同環境，即•攝氏-10度夾頭溫度下，操作所達成的實驗结果。但是*在此一 實驗中未有靜笛夾頭後處理。夾緊霣壓再度地是Μ10 0伏 特之增量減少，且在此一實驗中，氦流動嗝爆3 04發生在 一+468伏特之鬆開«壓下。沒有後處理，隨先前處理之晶 片發生的埸致發射充電在目前之晶片與靜霣夾頭表面之間 造成一滅少之靜電吸引力。因此*铺要一較高之鬆開電壓 來抵銷由積聚之剩餘霣荷所產生的電場。 第5圆繪示當沒有夾頭後處理且利用一稍增加之夾頭 溫度攝氏+10度時的實驗结果。對於此實驗而，氦流動嗝 爆3Q4發生於+33D伏特。在此一情況下，壜致發射充電依 然是最主要的放電效果。但是，在此一較高之夾頭溫度下 ，電荷徙動放霄對於留在工作件與靜電夾頭表面之間的刺 本紙張尺度適用中國國家標準（CNS ) Α4規格（2丨Ο X 297公釐） 18 裝 I—訂I I I I 線 ί - (請先閲讀背面之注意事項异填寫本頁) A7 B7 經濟部中央標準局員工消費合作杜印製 五、發明説明（16 ) 餘靜電力有某種影響（滅少該力）。依此，需要一較小但 仍為正值之鬆開電懕如第4圖所示。 第6圖繪示一使夾頭溫度增高至攝氏+30度之實驗的實 驗结果，該一溫度之增加造成電荷徙動成為最主要 的剩餘放霣效果，且在此一實驗中*對靜霣夾頭實胨後處 理。夾緊電壓再度M1QQ伏特之増量減少而在發生於-2 00 伏特發生之氦嗝爆304上達成一鬆開霣颸。《由後處理， 與先前處理之晶片一起發生的場致發射充霣不畲在目前之 晶片與靜電夾頭表面之間造成一減少的靜苗吸引力。因此 ，需要一負鬆開電壓來抵銷由剰餘電荷所產生的剩餘靜電 場。 如同可自此實驗數據所見*靜霣夾頭在反應室内操作 的溫度戲剌性地改變了抵銷在夾緊電壓已由靜電夾頭被去 除後所留下的刺餘靜電力所需要的鬆開S壓。因此，先前 技藝利用固定電壓水平將晶片由靜霣夾頭鬆開不瑭合使用 在產生不可預期之刺餘靜電力的變化室環境中。掲露於說 明書中之本發明鬆開方法提供一實時、可調整的方法以测 定利用一不致傷害晶片的相當小物理提升力將一晶片由靜 電夾頭移開之鬆開電壓。 雖然在本文中已詳述體現本發明之教示的各種實施例 ，習於此技藝之人士能夠很容易地設計出仍能體現這些教 示的許多其他變更實施例。 (請先閱讀背面之注意事項.*·.寫本頁) -裝. 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 19 五、發明説明（17 ) A7 B7 元件檷號對照表 霣漿體反應室... ____50 霣漿體......... …120 請 先1 閱 霣腦控制系統... …100 靜電夾頭....... …122 讀 背 DC電壓供給源... ...102 陰極護套....... ...124 面 - RF發生器....... ...104 平滑層......... …126 意 事 項 匹配網絡....... …106 升降銷孔....... …128 匹配網絡....... …108 導管........... …130 寫 本 頁 低通濾波器..... ...110 供給源......... …131 電感天線....... …112 孔眼........... …132 支持座......... ...114 升降銷......... …134 上極板......... …116 氣力升降櫬構... ...136 晶片........... •••118 氣體導管....... …138 線 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 2029714Κ Α7 Β7 Printed by the Employee Consumer Cooperative of the Central Bureau of Economics of the Ministry of Economy 5. Description of the invention (1) The general description of the present invention is related to the electrostatic chuck holding a work piece, and, more specifically, the The method of loosening a work piece (such as half of the wafer guide) on a chuck. Electrostatic chucks are used to hold a work piece in many different combinations * ranging from holding a piece of paper in a computer plotter to holding a semiconductor wafer in half of the wafer guide processing chamber. Although the design of static chucks can vary, they all cause opposite polarity charges on the work piece and the electrode, respectively, by applying a slight pressure to one or more of the chucks. On the contrary, the static suction force between the poles pushes the work piece toward the chuck, keeping the work piece locked. In semiconductor wafer processing equipment, electrostatic chucks are used to clamp the wafer to a support during processing. The support base can form a polar electrode M and a heat sink for use in etching or chemical vapor deposition (CVD) applications. More specifically, the static chuck has a layer of dielectric material covering the base of a guide. In a “unipolar” electrostatic chuck, the voltage is applied to the Conductor® Base with respect to an internal chamber ground reference. The electrostatic force is established between the clamped wafer and the electrostatic chuck. When voltage is applied, the wafer is returned to the same ground reference as the voltage source. Or • The plasma body can use the wafer M ground as a reference datum, but a certain electrical drop occurs in the plasma sheath formed on the clamped wafer and the reference electrode. To cool the wafer during processing, an inert gas hip, such as helium, is pumped between the crystal and the chuck surface to serve as a thermally conductive medium for the water-cooled chuck. Due to the pressure of the helium gas applied at the interface between the wafer and the chuck, a relatively high size is required to generate the electrostatic force required to clamp the wafer. For example, an aluminum oxide dielectric that operates under a heat transfer gas pressure in the range of 15 to 30 Torr (this paper standard applies to China National Standard (CNS) Α4 specification (210 X 297 mm) (please read the back (Notes and fill in this page again) -Installation. —Department of Economics, Central Standards Bureau of the Ministry of Economic Affairs, Negative Consumer Cooperation, Du Yin, Α7 Β7 V. Description of Invention (2) A static chuck with a quality of approximately 10) The size of the electric field in the 5 × 10β to IX 10β V / CB fan nursery is required. The electric field in the vacuum gap between the wafer and the chuck is higher than the ratio of the dielectric constant of the dielectric material to the vacuum. In this example, the ratio is about 10 to 1; therefore, the electric field in a vacuum gap can be ten times larger than the electric field on the surface of the wafer. To be clear • The formed field can reach 1 > in the vacuum gap < 106 to 5 father 106 V / cm. This high value can cause the dielectric material to fill up and may prevent the chip from loosening after processing. In an ideal medium, that is, only the charge is bound, the high electric field will cause the surface between the wafer and the chuck to fill up. The mechanism that causes this charging is field emission charging, which is due to the high electric field that reduces the height of the bit stack, that is, overcoming the work function of the wafer and / or chuck surface material, causing the tunnel charge to tunnel from the wafer to the chuck surface Or vice versa, it becomes possible. The amount of charge caused by field emission depends on the phase of the surface material work function M and the effective electric field at the interface between the surfaces. The induced electric field generated by the field emission charge is always opposite to the applied electric field, reducing the static force generated by the net field and the chuck and the wafer. However, when the applied energization field is removed, the chuck voltage is set to 0 volts. • There is residual electrostatic force due to the presence of charge caused by field emission charging on the chuck surface and the back surface of the wafer. Therefore, since the remaining electrostatic force must be overcome by a mechanical wafer lifting mechanism to remove the wafer from the chuck, it may be difficult to loosen the wafer. High electric field values cause other charging behaviors that lead to increased loosening difficulties. For example, if the chuck dielectric material is not an “ideal” dielectric • that is, there are some unbound charges or “free charge”, the free charge can move through the dielectric material under the influence of the applied electric field. The free paper lotus orientation is in accordance with the Chinese National Standard (CNS) Α4 specification (210Χ297mm) ---------- installed ----- 17-order ------- line- ί < (Please read the precautions on the back before filling in this page) A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs V. Invention description (3) The interface migration between the chuck and the chip causes the surface close to the chuck The self-charge density increases. Depending on the contact resistance between the back of the chip and the surface of the chuck, the charge may not pass through the interface. As a result, the surface area of the charge joint dielectric within the dielectric material accumulates. This phenomenon of charge migration depends on the material, time * temperature and the value of the enfield field. As a result, the static force at the interface between the wafer and the chuck has an effective increase over the static force of the ideal engraved medium. Since polarized and free charges contribute to the electrostatic force • The increase in force occurs due to the effective reduction of the separation distance between the back of the wafer and the charge in the medium. However, when the applied electric field is removed, i.e., the chuck voltage is set to 0 volts, a residual charge is left due to the existence of the migrating charge of M in the chuck dielectric and the back surface of the wafer. Therefore, the remaining static force increases the physical force required for the wafer to leave the chuck. The above effects are two examples of charging effects that occur during the operation of the electrostatic chuck and can affect the ability to release a wafer. In fact, two charging phenomena can occur on a particular static chuck under the condition that the chuck is operated. However, the field emission charge and the mold charge migration have a counter-effect, that is, the field emission charge causes a flash field opposite to the direction of the applied electric field, and the flash charge motion causes a « Poo. For example • A unipolar clip consisting of a ceramic coated with a slurry such as 囶 1 »〇3 / 以 0 霣 髣 medium operated in a high-density plasma etching process at low temperature (eg -10 degrees Celsius) The head has a matching field emission charge phenomenon. Field emission charging reduces the static force during processing and results in the residual static force after removing the electrostatic chuck pressure. If the wafer is removed by the static chuck in some way, an additional dielectric charge occurs. This cumulative effect is sufficient to hold a certain size of paper based on the environmental conditions used during wafer processing. The Chinese National Standard (CNS) A4 specification (210X 297mm) is applicable. (Please read the notes on the back # -fill in this page) The description of the invention of Α7 Β7 i 'printed by the Bei X Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (4) Until the level of charge cells and occurrence occurs. Or • If the same clip face is operated at the same environmental conditions at a higher temperature (eg +30 degrees Celsius), the charge migration will dominate the remaining charging process through the energetic medium. The high charge density at the interface between the wafer and the chuck due to charge migration can increase the applied electric field and neutralize the field emission charge at the chuck interface to some extent. The effective field between the electrostatic chuck and the wafer is increased by the charge migration effect. However, once the applied clamping voltage is removed, a residual electrostatic force causes the wafer to be released from the chuck. Since this charging depends on time, electric field strength and temperature, the residual effect cannot be predicted. In addition, the residual charge and force increase chip by chip until a certain saturation condition is reached. Therefore, it is necessary to have a method of releasing a wafer from the static chuck under any environmental conditions without damaging the hardware or the wafer being processed. Conventional techniques for loosening the chip include (1) adjusting the applied electrostatic chuck voltage to 0 and waiting for a certain period of time for the crystal H and the static chuck to be placed (2) adjusting the applied electrostatic chuck voltage to another fixed voltage * waiting Discharge the wafer chuck for a certain period of time; (3) Use (1) or (2) and then »use a mechanical device to overcome the static force to remove the wafer from the static chuck; or (4) rely on the wafer and the An ohmic connection is formed between the grounds and the chip is conductively grounded. Methods (1) * (2) and (3) have unknown and possibly very long waiting periods. On the other hand, the method (4) cannot work on a wafer with an insulating back and may cause damage to the wafer. A significant shortcoming of the conventional methods of removing the small charge is that they cannot completely remove the charge, leaving some residual electrostatic force between the wafer and the chuck. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 1 IIII ^ Order J ~~ II line (please read the precautions on the back-S · fill in this page) printed by the Employee Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs System A7 B7 5. Description of the invention (5) This residual electrostatic force requires a considerable mechanical force to separate the wafer from the chuck. The force required to remove it sometimes cracks the wafer or otherwise damages the wafer. Even if the wafer is not damaged, the difficulty of mechanically overcoming the remaining static force sometimes causes the wafer to unpredictably fall from the chuck to a position, which can be retrieved by the position K using a conventional automatic transmission instrument. Therefore, there is a need for a method in which an electrostatic chuck releases half of the wafer to minimize the residual static force between the wafer and the chuck surface. The disadvantages hitherto associated with conventional technology are overcome by an innovative loosening method used with a conventional static chuck. The method of the present invention applies a relatively small mechanical force (releasing force) in a direction opposite to the electrostatic force (clamping force) to a work piece (such as a semiconductor wafer), which clamps the crystal H to the surface of the chuck. This releasing force can be increased or decreased by a mechanical crystal H lifting structure or by heat transfer gas pressure applied to the back of the crystal H at the interface between the wafer and the static chuck. Once the unclamping force is applied | the clamping voltage spans from 0 volts towards the voltage of the opposite polarity from the initial clamping voltage. Since the voltage is from one extreme to the other, the electrostatic force clamping the wafer is monitored by examining the lifting force of the wafer lifting mechanism or the gas flow rate (or force) applied to the interface between the wafer and the electrostatic chuck. When the clamping voltage changes, the lifting force is monitored for its change. Depending on the lifting force used, the force change is the change in heat transfer culvert gas flow rate, heat transfer culvert gas »Μ-force or jacking rod. When one of these force indexes exceeds a critical level * This method judges that the remaining static force is sufficiently small, that is, the current generated by the current level and the polarity of the clamping pressure are offset by the actual value. The residual electrostatic force allows the wafer to be released without excessive use of lifting force. When the mechanical force is judged to be sufficient, the paper size is applicable to the Chinese National Standard (CNS) Μ specification (21〇Χ297 mm). Install the IJ- Ί n I line ... ~ ^ (Please read the notes on the back first ^% Write this page) A7 ^ _ Printed by the Consumer Standardization Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs B7_ Description of the invention (6) When the clamping level and polarity are small, that is, when the residual electrostatic force is minimum, the clamping scraper ( It is now a loose pressure) to maintain a certain period of time and then the wafer is mechanically separated from the static chuck. Since the unpredictable nature of the electrostatic force due to field emission and charge migration has unknown values, the method of the invention allows a minimum release force suitable for release at any residual electrostatic force value to be flexibly determined. Under the minimum electrostatic force, the electric field generated by the applied squeegee substantially cancels the electric field generated by the residual charge. To further reduce the slack force, after each wafer is removed from the chuck After that, the remaining charge is discharged by exposing the surface of the electrostatic clip to the plasma body, that is, the present invention uses a chuck post-treatment. In this way, the residual charge is accumulated on the surface of the chuck from one wafer to another. In short, although the residual charging effect varies considerably depending on the wafer processing environment, the method of the present invention flexibly adapts to any wafer processing environment to generate an appropriate release voltage that will cause the wafer to be removed from the chuck and released by the europium The force is minimized. In this way, the wafer damage caused by loosening is minimized and the wafer can be quickly removed from the processing chamber without waiting for the discharge of residual charge. The teaching of the present invention can be quickly understood by considering the detailed description under Μ with the accompanying drawings. Figure 1 is a part of a schematic diagram showing a cross-sectional view of a conventional semiconductor wafer manufacturing processing chamber, which includes a conventional electrostatic chuck to which the present invention can be applied; Figure 1 is a flow chart of the method of loosening the electrostatic chuck; the paper scale is applicable to the Chinese National Standard (CNS) Α4 specification (210Χ297 mm) printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Invention Instructions (7) 3 laps is a graph of unclamping voltage and helium flow rate versus time for a chuck that is operated at -10 degrees Celsius and uses a chuck post-processing; lap 4 is a post-processing operation at -10 degrees Celsius and without a chuck. Figure 5 is a graph of the unclamping voltage and helium flow rate of the chuck release time and helium flow rate versus time; Figure 5 is a plot of the unclamping voltage and helium flow rate of the chuck operated at +10 degrees Celsius without post-processing of the chuck; The 6 circle is a graph of unclamped pressure and helium flow rate versus time for a chuck that is operated at +30 degrees Celsius and is post-processed using a chuck. For ease of understanding, the same reference numbers are used when possible to denote the same common elements in the garden. Figure 1 shows a work piece that is supported and will be processed, such as a semiconductor chip , The conventional open chuck fixed on the support seat in a high-density plasma reaction chamber. For a detailed understanding of the plasma slurry reaction chamber and the operation of its wafer processing, you should refer to the plaque type and detailed descriptions in Patent Application No. 0 7/94 1,507 filed on 1 992, 9, 8; Into reference. The application disclosed a partial, high-density beaker reaction chamber manufactured by Applied Materials of Santa Clara, California. In addition, a conventional quill that can be used together with the loosening method of the present invention «Clamp is disclosed in U.S. Patent No. 5,350,479 issued to the accused of the case in 1994, 9, 27, and its disclosure content is listed For reference in this article. FIG. 1 shows those 霣 子 霣 路 that understands the method of releasing a wafer of the present invention and a conventional mechanical assembly of a slurry reaction chamber. The circuit includes a computer-controlled system 100, a conventional DC scraper supply source 102, κ and RF (please read the precautions on the back and fill in this page). Packing · This paper size is applicable to China National Standard (CNS) A4 Specifications (210X297mm) 10 B7 '^ Description of the invention (8) The generator 1〇4 and the matching circuits 106 and 108. The DC power supply source supplies the clamping pressure to the chuck with a low-pass wave 110. This filter isolates the DC voltage source 102 from the RF generator 104. The RF source power and the RF bias power are respectively coupled to the conventional RF generator 104 that generates one or one RF frequency on K via the matching networks 106 and 108. The source power is coupled to a sense antenna 112, and the bias power系 coupled to the support 114. A ground reference of RF bias power and DC voltage is a grounded upper plate 116. The DC voltage source 1 ϋ 2 supplies positive 1000 volts M to generate an electric field that electrostatically holds a wafer 118 on the support 114. When the wafer is to be released (or "released"), the DC voltage source is controlled by a computer control system 100 that performs the method of the present invention described below. Printed by the Employee Consumer Cooperative of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs. Plasma reaction chamber 50 uses the RF coupling source RF coupled with inductive coupling to generate and maintain a high-density, low-energy plasma «120. The RF bias power is capacitively coupled to the dagger via the wafer 118 and electrostatic chuck 122. With the structure shown in the first circle, the plasma density is controlled by the RF source power and the ion energy is independently controlled by the RF bias source. The result is a uniform high density, low electron temperature slurry 120 at the wafer 118 whose ion energy can be controlled from about 15 eV to hundreds of eV. This structure allows the smallest degradation of M and the smallest high-energy particles to damage the etched wafer. Although the aforementioned slurry reaction chamber provides a high oxide etch rate, it also requires certain strict hardware conditions, especially for the static chuck 12 2. In detail, the RF bias power must be uniformly integrated into the wafer and the paste. The cathode sleeve 124 with a high-density, low-electron temperature slurry is very thin, usually below one millimetre * and the military area impedance of the cathode sheath is mainly resistive and very low. For wafers with typical resistance rates • Unless this paper scale is applicable to the Chinese National Standard (CNS) A4 specification (2 丨 OX297mm) 11 The Ministry of Economic Affairs Central Standards Bureau employee consumption cooperative printed Α7 Β7 V. Invention description (9 ) The RF bias power is very uniformly coupled to the wafer, otherwise the ion / electron current and ion energy will not be uniform. In addition to the problem of uniform «fitting ** it is necessary to thermally couple the wafer to the cooled statically chuck substantially uniformly. The thermal load placed on the wafer is very large. For example, at a typical RF source power of 2800 watts K and an RF bias power of 1 400 watts, about 2 kW of heat must be continuously removed from the wafer. To provide this uniform coupling and thermal cooling, the holder 114 and the electrostatic chuck 122 include an aluminum block with direct liquid cooling. This liquid cooling is provided by an inlet that enters the lower part of the support seat and flows through a cooling channel (not shown in the circle), and is provided by the cooling water that exits the support seat through an opening. A smooth layer 126 of dielectric material is adjacent to the smooth upper surface of the support 114 to contact the underside of the wafer. The calendar 126 of the dielectric material, except for the four lifting pin holes (two of which are indicated by the 128 reference numeral), covers the entire upper surface of the support base 114. The support base is preferably formed from an aluminum block that has been trimmed to make the smoothness and parallelism between the upper and lower surfaces less than 0.001 inch (25 microns). The hole system is then drilled in the support base as described below. The upper surface of the support base is sandblasted to improve adhesion. Next, an alumina or alumina / titanium oxide composite ceramic membrane with a thickness of about .Q2Q inches (0.5 mm) is engraved on the support base. Tu Tu. The coating is then ground to achieve a thickness of about Q.Q1Q inches (250 meters). The thickness of the medium coating is 0.5 microns. The flute layer and the underlying aluminum block form an electrostatic chuck 122. A cooling gas, such as helium, is delivered from the supply source 131 to the support base through a duct 130 and distributed to the gas axis or cavity of the seven axis directions in the support base. 297mm) --------- installed — (please read the notes on the back ^ 4 fill in this page) Order ·-12 Employee's consumer cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs Printed Α7 Β7 V. Description of invention (10) Within each of 138. The diameter of each tube is about 0.3 inches (7.5 m). One catheter is attached to the central axis of the support base, while the other six pipes are equally spaced around the support base and slightly inward. The catheter does not penetrate the dielectric calendar. In fact, it is preferred that the conduits do not extend all the way to the upper surface of the support base, and leave a thin layer of aluminum on the upper end of each conduit * preferably about 0.015 inches (380 microns) thick. Each duct can be formed by expanding a hole from a flat bottom under the support block. The cooling air bladder is transported from each conduit or cavity through the plurality of perforations 132 to the surface of the entrained medium layer. Each perforation is smaller in diameter than the conduit. The preferred method is the use of flute drilling to create a thin aluminum layer with a diameter of about 0.06 to ΟΟδ inches (150-200 mm) that passes through the dielectric layer and traverses over the perforation of each catheter. Several such holes are formed on the upper end of each gas tube or cavity. In order to distribute the cooling gas from the perforations throughout the upper surface of the upper layer, one or more gas distribution grooves may be formed in the upper surface. A single concave weight can penetrate any number of these holes, but each hole communicates with at least one groove. These grooves should extend over most of the dielectric surface M so that when a semiconductor wafer or other work piece is placed on the static chuck, the cooling gas «will flow upward through the conduit, through the eyelet, and through the distribution groove A small clearance space between the lower surface of the substrate and the upper surface of the dielectric layer. A nominal gas flow rate (leak rate) is achieved when a relatively small amount of heat transfer gas flows from below the wafer into the chamber. In the conventional processing chamber operation, an automatic instrument arm (not shown) moves a wafer into the chamber through a slit valve. This automatic instrument puts the crystal Η at the tip of the lifting pin 134. The wafer is lifted by the pneumatic lifting mechanism 136 at this time. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm), mounting _ order one-^ line f ((Please read the precautions on the back before filling in this page) 13 A7 B7 du printed by the Central Standards Bureau of the Ministry of Economic Affairs and Consumer Cooperation V. Invention description (11) 2 to 5 cm above the top of the Jing chuck 122 The pneumatic lifting mechanism under the control of the computer control system 100 then lowers the lifting pin 134 to make the wafer fall on the surface of the chuck. The wafer falling time is typically 1 to 3 seconds. Once the lifting pin has lowered the wafer onto the chuck , The plasma is triggered, ie * "trigger" gas is supplied to the plasma chamber and the RF source power is supplied to the antenna 112. Once the system triggers the plasma, the computer control system applies a DC clamping voltage to the chuck And the heat transfer gas is applied to the interface between the wafer and the chuck. The clamping voltage causes negative and positive charges to accumulate on the surface of the wafer and the chuck electrode. The number and voltage of the charge and the capacitance between the wafer and the chuck electrode Multiply The product is proportional. After the wafer drops on the chuck, the lift pin continues to fall into the support seat. The opposite polarity charge on the wafer and the chuck electrode causes an electrostatic attraction * The electrostatic attraction Press the wafer against the chuck. The clamping voltage is set to a high enough value to create a static force between the wafer and the chuck that can prevent the wafer from moving during the process step of the bun in the processing chamber. The wafer therefore It can be fixedly held on the chuck and is said to be clamped. After the wafer is clamped, one or one semiconductor manufacturing process steps on the M are carried out in the chamber, such as depositing or etching a thin film on the wafer. For the slurry process, the RF supply source selectively applies RF power to the antenna 112, and between the cathode support base and the grounding anode that generates a plasma 120 in the area above the wafer. The plasma is between the wafer and the ground Provides an electrical path. However, due to the difference in the mobility of electrons and positive ions, a DC voltage drop across the plasma body causes the wafer to be negative relative to the ground. If the clamping voltage is read positive The total DC scraper between the chip and the chuck electrode will be crystalline. This paper standard uses the Chinese National Standard (CNS) Α4 specification (210Χ 297 mm) 14 ^ ^ Packing.-Order I ^ Travel (please read the back side first Note ^: fill out this page) A7 B7 V. Description of the invention (12) The sum of Bias® and Chucks® Therefore, the bias voltage of the chip increases the electrostatic force of the detained chip. 0 Please read the notes on the back first. After completing the semi-conducting «production procedure steps, the pneumatic lifting mechanism raises the lifting pin to raise the wafer above the chuck. M allows the wafer to be removed from the chamber by the wheel of the automatic instrument. The lifting pin can be lifted Before high wafers, the wafers must be loosened electrically, that is, the electrostatic force that holds the wafers on the chuck must be removed or offset. According to the conventional technology, the clamping "K sea bream delivery is closed, and both the chuck electrode and the wafer are grounded to remove the individual charges, the ® charge has been applied to the chuck electrode during the previous application of the clamping voltage Accumulated on the chuck knot and wafer. The chip is conventionally grounded by leaving the RF power supply at a reduced power level to maintain a plasma stern that provides a conductive path from the chip to the ground wall of the chamber. But * as discussed above, after using a conventional loosening method * a residual load remains on the wafer and chuck due to charge migration and / or induced emission charging. As such * the prior art S loosening method may require excessive physical force M to remove the wafer from the chuck. Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. The method of releasing the wafer by the static chuck of the present invention is described in the process circle of the second circle. This method is mostly completed by a software program that is executed on the "Control System". The loosening method 200 starts at step «202 and M step 204 is buttoned. In step "2 04 ·-Lifting power is pickled and added to the crystal Η. The value of this lifting force is quite small and does not cause the wafer to be removed from the surface of the electrostatic chuck, but is used as a tool for measuring the force required to remove the wafer from the chuck. At step 206 * This method measures this lifting force of the director. Typically, this is done by measuring the lifting force applied by the four pins to the wafer using a dynamometer attached to the lifting structure. Alternatively and better, the lifting force can be transferred by heat transfer. The paper standard is applicable to China National Standard (CNS) Α4 specification (210Χ297 mm). 15 A7 B7 Printed by the Consumer Labor Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. Explanation (13) The pressure of the body is applied and this force is monitored using a flow meter in the oxygen supply source (eg a gas flow monitor). Assuming a relatively low gas leakage rate through the interface between the wafer and the chuck, the lifting force is proportional to the gas pressure in the conduit carrying helium to the electrostatic chuck, or inversely proportional to the gas flow rate. Therefore, the change in scraping force or flow rate indicates the change in residual electrostatic force that clamps the wafer to the chuck. More specifically, when a constant gas pressure is applied to the back of the wafer, when the static electrostatic force "is reduced by the offset effect of a pickling plus clamping voltage" the wafer will rise slightly due to the rise of the chuck surface. A short increase and a corresponding decrease in energy. This phenomenon is called a flow burp (flowburp). At step 2 08, this method reduces the clamping voltage by a predetermined amount. A typical reduction of Dong starts at a clamping voltage of about 100 volts · M—about +1000 volts. In step 210 * after the reduction of the clamping age, the lifting force is measured again. In step 212, the measured lifting force is compared with a threshold level. If the lifting force has fallen below the threshold level M, the method proceeds to step 214. If the lifting force has not fallen to the critical value level M * the procedure proceeds along the path 218 and returns to step 208, where the clamping pressure is again reduced by a predetermined amount M, for example 100 volts. Therefore, the loosening method 200 includes a loosening circuit composed of steps 2 08, 210, 212 and path 2 18, in which the clamping pressure is repeatedly reduced until the preset value is reduced by the dynamometer on the lifting pin Indicated or indicated by the flow rate indication of hot Fu gas * when the measured increase exceeds a predetermined threshold. Preferably • The critical value is a predetermined flow rate and the method exits the release circuit when the measured speed exceeds the predetermined critical flow rate. Increasing the gas flow rate (flow burp) occurs due to the applied voltage. Please read the notes on the back 4,4, and write this page -installed--The size of the paper booked is applicable to the Chinese National Standard (CNS) A4 specification ( 210X 297 mm) 16 V. Description of the invention (14) A7 B7 When the Central Economic and Trade Bureau of the Ministry of Economic Affairs Bei H Consumer Cooperative printed the qualitative offset against the static electricity field. Once offset, the remaining static force is actually eliminated and the air force slightly lifts the wafer from the chuck causing the flow to burp. When the query in step 212 is answered affirmatively, the method proceeds to step 214 * At this step "The current clamping level is maintained for a predetermined period of time, usually five seconds. After the predetermined time has elapsed, the lift pins are used to physically release the wafer from the electrostatic chuck surface at step 216. Since the loosening force required to remove the crystal Η and the loosening voltage required to offset the thorny static area are unknown, the method of the present invention is adjustable so that this method determines an effective offset against any residual residue The loosening voltage of the remaining electrostatic field at the interface between the head and the wafer. As such, the method of the present invention can be used to loosen work pieces in real time without having to complete any pre-established or predetermined measurements. The effectiveness of the method of the present invention is demonstrated by the experimental results that have been completed using the method. Sections 3, 4.5 and 6 show the experimental results using the method of the present invention under various environments in a reaction chamber. In each experiment, the clamping voltage was increased by 100 volts from the initial clamping of +1000 volts. A heat transfer gas pressure of 15 Torr is used during clamping and processing of the wafer. To release the wafer, the heat transfer gas pressure is typically reduced from about 15 Torr to about 3 to 5 Torr. At this low pressure, when the optimal release pressure is reached, the crystal H will not jump away from the chuck. For some special experiments, the mechanism for applying a lifting force is the heat transfer gas impact force (for example, helium pressure). The minimum release pressure is determined by the increase in flow rate in a 3 SCCM of helium. . This increase in flow rate is called a flow burp, which means that one of the crystals held on the chuck reduces the static force. In the third picture, the surface of the electrostatic clip is initially exposed on the paper. The Chinese national standard (CNS) Α4 specification (210 X 297 mm) is applicable. 17 -17- Please read the notes on the back. Printed A7 B7 by the Consumer Cooperative of the Central Bureau of Standards. V. Description of the invention (15) The slurry M discharges the thorny residual charge left on the surface of the electrostatic chuck by the previously processed wafer. This is called chuck post-processing. The chuck temperature in this example is -10 degrees Celsius. In this environment, the dielectric κ of the electrostatic chuck is a substantially ideal dielectric operation. According to this, the charge emission is the main reason for the residual electrostatic force between the chip and the surface of the electrostatic chuck. As shown in section 3_, the clamping pressure 3QQ is reduced from a level of +1000 volts (left hand angle 308) M1QQ volts until the change in flow rate 302 (right hand angle 310) (flow hiccup 304) is detected Until now. At this point the clamping pressure is maintained for a period of about 6 seconds • and then the wafer is physically loosened by moving the lift pin to engage the wafer and lift the wafer from the chuck (at 30 6). The hiccup pressure level that occurs in the chamber of a stream burp is +100 volts. Figure 4 shows the experimental results achieved when the chip and the electrostatic chuck are in the same environment, ie, at a temperature of -10 degrees Celsius. But * There is no post-processing of the whistle chuck in this experiment. The clamping pressure is again reduced in increments of Μ10 0 volts, and in this experiment, the helium flow hiccups 3 04 occurred when a +468 volts were released. Without post-processing, the induced emission charging that occurs with the previously processed wafers causes a small electrostatic attraction between the current wafer and the surface of the static chuck. Therefore, a higher release voltage is needed to offset the electric field generated by the accumulated residual load. Circle 5 shows the experimental results when there is no chuck post-processing and a slightly increased chuck temperature +10 degrees Celsius is used. For this experiment, helium flow burping 3Q4 occurred at + 33D volts. In this case, the charge emission is still the most important discharge effect. However, at this higher chuck temperature, the charge migration is applicable to the Chinese national standard (CNS) Α4 specification (2 丨 Ο X 297) for the size of the stabbing paper left between the work piece and the surface of the electrostatic chuck Mm) 18 Pack I—book IIII line ί-(please read the precautions on the back and fill in this page first) A7 B7 Printed by the consumer cooperation of the Central Standards Bureau of the Ministry of Economic Affairs V. Description of the invention (16) This kind of influence (extinguish the force). According to this, a smaller but still positive value is needed to loosen the electrical charge as shown in Figure 4. Figure 6 shows the experimental results of an experiment to increase the temperature of the chuck to +30 degrees Celsius. This increase in temperature causes charge migration to become the most important residual release effect, and in this experiment Post-processing of the chuck. The clamping voltage is again reduced by an increase of M1QQ volts, and a slack is reached on the helium hiccup 304 that occurred at -200 volts. "From post-processing, the field emission that occurs with the previously processed wafers is not enough to cause a reduced static attraction between the current wafer and the surface of the electrostatic chuck. Therefore, a negative release voltage is needed to offset the residual electrostatic field generated by the residual charge. As can be seen from this experimental data * The temperature of the static chuck operating in the reaction chamber dramatically changes the looseness required to counteract the residual electrostatic force left after the clamping voltage has been removed by the electrostatic chuck Open S pressure. Therefore, the prior art uses a fixed voltage level to release the wafer from the static chuck without using it in a changing room environment that generates unpredictable static electricity. The loosening method of the present invention disclosed in the description provides a real-time, adjustable method to determine the loosening voltage for removing a chip from the electrostatic chuck using a relatively small physical lifting force that does not damage the chip. Although various embodiments embodying the teachings of the present invention have been described in detail herein, those skilled in the art can easily design many other modified embodiments that still embody these teachings. (Please read the precautions on the back first. * ·. Write this page)-Pack. This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 19 5. Description of the invention (17) A7 B7 element No. comparison table 霣 plasma reaction chamber ... ____50 霣 plasma ......... 120 Please first read the brain control system ... 100 electrostatic chuck ... 122 Read back DC voltage supply source ... 102 Cathode sheath ... 124 Surface-RF generator ... 104 Smoothing layer ... ..... 126 Matching Network for Intentions .... 106 Lifting Pin Holes .... 128. Matching Network .... 108 Conduit ... ........ 130 Write a low-pass filter on this page ..... 110 Supply source ............... 131 Inductive antenna ......... 112 Eyelet ... ......... 132 Support seat ... ... 114 Lifting pin ......... 134 Upper plate .......... ... 116 pneumatic lifting mechanism ... 136 chip ..... ••• 118 gas tube .... ............. 138 Ministry of Economic Affairs Central Standards Bureau employee consumer cooperative The size of the printed paper is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 PCT) 20