A7 B7 293136 五、發明説明（1 ) 〔發明領域〕 (請先閲讀背面之注意事項再填寫本頁) 本發明係有關在對於半導髗晶園或LCD(液晶顯示 器）基板等之被處理基板，實施半導髗處理之系統中所使 用之氣體供給用頭及使用該頭之裝載用ft空室，尤其，用 以防止減壓環境中之被處理基板之產生粒子污染用之氣體 供給用頭及使用該頭之裝載用眞空室。 〔先前之技術〕 一般在半導體處理系統，予以配設有處理室和藉閘被 連接於處理室之裝載用眞空室（預備室）。處理室內使用 有各種之處理用氣髄，例如在減壓下來對於半導體晶園或 L C. D基板等之被處理基板實施處理。裝載用ft空室，通 常與惰氣供給系統和排氣系統相連接，而形成獨立於處理 室可實施壓力調整。亦可個別地配設晶園搬入用之裝載用 眞空室和搬出用裝載用眞空室。 經濟部中央標準局員工消費合作社印製 在半導體處理時，例如半導髖晶園係首先搬入於裝載 用眞空室。接著，予以進行裝載用眞空室內之氣髏之排出 及置換，以使裝載用眞空室內使之形成與處理室內略爲同 樣之減壓環境。接著，打開閘門而使晶圖從裝載用眞空室 移送至處理室，而後關閉閘門並在處理室內進行晶圓之處 理。 晶園處理後，打開閛門而移送晶圓至裝載用眞空室。 接著予以關閉閘門而進行裝載用眞空室內之氣饈排出及置 換，以使裝載用眞空室內成爲氮氣等惰氣空氣之環境。而 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 293136 五、發明説明（2 ) 後從裝載用«空室搬出晶圓。 在裝載用眞空室，具有起因於情氣或空氣之導入而產 生之晶園表面由粒子所污染之虞。其中之—的原因，係附 著於裝載用眞空室內壁之微小塵埃等之粒子，因氣體之導 傀而被飛播而產生者。另一原因乃所導入之氣體本身所混 進之微細粒子與氣髏一齊被输送至裝載用眞空室內而引起 者0 而防止粒子之飛播之一般性方法，係有逐渐地渐大氣 髗導入用之閥的打開度，以抑制氣臁流速之增加之所謂慢 速發洩（ slow vent )方式者被周知。然而，無論如何 地小心來調整閥開度，在滅Μ狀態下，尤其從高的減應狀 態下而在閥被打開之瞬間，會由於壓力之急激的變動而產 生氣體之流動，致使裝載用眞空室內之粒子會飛揚。又並 無法防止混進於氣體本身之微細粒子的侵入。 〔發明之摘要〕 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 因此，本發明之目的，係擬提供一種用以防止起因於 給予氣密空問內之氣體導入而產生之被處理基板之被處理 面之粒子污染用之氣髏供給用頭及使用該頭之裝載用眞空 室爲其目的者。 依據本發明之第1觀點之氣體供給用頭，主要在半導 «處理系統之氣密之外殼內，使在前述系統被處理之基板 以形成被支承之狀態下，用以供壓力調整用氣酱給予前述 外殻內用，具備有： 本紙張尺度適用中國困家標準（CNS ) Α4規格（210Χ297公釐） A7 B7 五、發明説明（3 ) 被連接於導入前述氣饈至前述外殻內用之氣臁導入管 的氣髗儲存器：及 具備具有連通前述氣髗傭存器內和前述外般內用之多 數細孔之多孔質過濾層的出口過濾器，而前述細孔之平均 直徑爲0. 8//m〜0. li/m，前述過濾層之氣孔率爲 1 0 % 〜5 0 %。 依據本發明之第2觀點之裝載用眞空室，主要係處理 基板之半導髓處理系統之裝載用眞空室，具備有： 具有使前述基板通過用之開口的氣密之外殻： 使前述開口可打開且關閉（閉合）成氣密之機構： 用以支承前述基板於前述外般內之支承機構； 用以導入壓力調整用氣體之氣髗導入管； 用以排氣前述外殻內用之排氣系統； 被連接於前述氣髋導入管，用以在支承前述基板於前 述支承機構之狀態下，將來自前述氣髏導入管之氣體予以 供給於前述外般內用之氣體供給用頭；及 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 前述氣體供給用頭具備被連接於前述氣體導入管之氣 髋備存器及具有連通前述氣體傭存器內和前述外般用之多 數細孔之多孔質過濾層的出口過濾器，而前述細孔之平均 直徑爲0. 8#m〜0·l#m，前述過濾層之氣孔率爲 1 0 % 〜5 0 %。 〔適宜實施例之詳細說明〕 圓1係顯示使用有關本發明一賁施例之裝載用眞空室 本紙張尺度逋用中國國家標準（CNS > A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 A7 __B7 五、發明説明（4 ) 之半導體晶園蝕刻系統之概略圖。 圖1所圖示之蝕刻系統係具備有處理室1和晶園搬入 及搬出用之1個預備室，亦即，裝載用眞空室21。處理 室1具備具有1個開口 3之氣密外殻2，而裝載用眞空室 2 1則具備具有成相對向之2個的開口 2 3、2 4之氣密 外般2 2。處理室1之開口 3和裝載用眞空室2 1之開口 2 3，係藉閛閥1 8成氣密地被連接於處理室1。又裝載 用眞空室2 1之開口 2 4 ，係由閘閥1 9成氣密地被連接 於出入部（in/out section )，例如收容複數之晶圖用 之卡E載置部。 處理室1上部將連接反應氣體供給系統4，下部則連 接排氣系統。處理室1內配設有做爲載匿台及下部電極來 作用之感應器6，和做爲與下部電極相對向之上部電極及 反應氣髏供給系統4之蓮蓬頭作用之淋浴（簇射）電極7 。感應器6係藉匹配（耦合）電路8被連接於高頻電源9 ，而簇射電極7則被接地，感應器6周園，爲使晶圓W對 感應器6固定而配設有可上下動之夾子11。又在感應器 6內，內裝有用以導入冷媒來冷卻感應器6用之冷卻用外 套，及用以供給熱傅達氣體於感應器6和晶圓W之間用的 線路1 3。 裝載用眞空室21上部連接有壓力調整用或氣體置換 用之氮氣等之惰性氣體，或用以供給淨化（清潔）氣體等 之氣髏用之氣髗供給系統2 5，又在下部則連接有排氣系 統2 6。因此，裝載用眞空室2 1形成可獨立地來實施調 本紙張尺度適用中國國家標準（CNS)A4規格（210X297公釐）_ 7 (請先閱請背面之注意事項再填·??本頁) Λ 訂_ ^3136__ 五、發明説明（5 ) 整內部Μ力。又裝載用眞空室21內中央，配設有經由開 口 2 3、2 4來输送晶圃W用之输送臂2 7。 裝載用»空室2 1之氣體供給系統2 5具備成氣密地 貫穿外殻2 2，且被連接於氣體供給源之氣體導入管3 1 。導入管3 1前端則連接氣《供給用頭3 2。導入管3 1 係藉調整器3 3及閥3 4而被連接於氮氣等之惰氣或空氣 等之氣體供給源3 5。而賅等構件3 3〜3 5乃由控制器 3 6所控制。 接著，說明使用圖1所圖示之蝕刻系統之晶園蝕刻處 理之一例子。 經濟部中央標準局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 首先，打開裝載用眞空室21之閘閥19來與出入部 連通，而搬入爲被處理基板之晶圓W至裝載用眞空室21 內。接著關閉閘閥19以令裝載用眞空室21內保持成氣 密，並使裝載用眞空室2 1內藉由排氣系統2 6予以排氣 ，使之成爲減壓狀態。而後，從氣髗供給用頭3 2導入與 處理室1相同之環境氣體於裝載用眞空室2 1內，而使裝 載用眞空室2 1內以處理室1內之氣體來置換（第1氣镰 導入過程）。 再者，第1氣鳢導入過程亦可與排氣過程同時進行， 又排氣系統亦可設置强制性排氣機構，該場合時，由僅以 導入置換用氣髋而形成之自然排氣來使裝載用眞空室21 內進行氣體之置換。 接著，打開成氣密來連結裝載用眞空室21和處理室 1用之閘閥1 8，以連通裝載用眞空室2 1和處理室1。 本紙張尺度適用中國國家榡準（CNS ) Λ4規格（210Χ297公嫠） 經濟部中央標準局負工消費合作社印製 A7 _ B7 五、發明説明（6 ) 而後，移送晶園W至處理室1內，並載置於感應器6上且 以夾子1 1予以固定。接著，關閉閘閥1 8，以令裝載用 眞空室2 1及處理室1個別隔離成氣密。然後，對處理室 1內供給來自反應氣體供給系統4之氣系氣體等之蝕刻氣 體之同時，施加髙頻《壓於上下部電極7、6間，以使蝕 刻氣《成爲電漿，而以使用該電漿來蝕刻晶園W。 在蝕刻晶圓W後，打開閛閥18來連通裝載用眞空室 2 1和處理室1。接著，將晶圆W移送至裝載用眞空室 2 1內，惟此時，處理室1內之環境氣髄之一部分亦會移 入於裝載用眞空室21內。接著，關閉閘閥18來使裝載 用眞空室2 1和處理室1個別隔離成氣密。 然後，由排氣系統2 6來排氣，以令裝載用眞空室 2 1成爲減壓狀態。接著，一方面予以排氣裝載用眞空室 2 1內，並同時從氣髏供給用頭3 2導入例如情氣，以使 裝載用眞空室21內由情氣來置換（第2氣髏導入過程） 。然後，打開閘閥19以使裝載用眞空室21與出入部相 連通，而取出晶圓。 如圖2所示，氣酱供給用頭3 2具備做爲外徑約1 9 mtn、長度約1 〇 Omm之中空缸简4 5所形成之出口過 濾器4 0。出口過濾器4 0係由厚度約2mm之氧化鋁陶 姿多孔質板所構成。如圓3所示，構成出口過濾器4 0之 多孔質板，乃形成從外側依序由支承層4 7、中間層4 8 及過瀘屠4 9所形成之多層構造。在支承餍4 7 '中間層 4 8及過濾層4 9之個別所具有之細孔平均直徑，係形成 本紙張尺度適用中國國家標準（CNS)A4規格（2Ι〇Χ297公釐）-9 — (請先閱讀背而之注意事項再填寫本頁) Λ 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（7 ) 約1 0#m、約l//m及約0. 2"m°又支承屠4 7、 中間層4 8及過濾層之個個厚度爲約2mm、2 0 〜 3 0只m及2 0 〜3 0 //m。當製造出口過濾器4 0 之時，首先，以燃燒厚的支承層4 7來形成中空缸简，接 著，在其內面塗敷中間層4 8之材料之同時加以烘焙，最 後在其內面塗敷過濾層4 9之材料之同時予以烘焙。 在過濾器紅简4 5，亦即多孔質缸简4 5兩端，藉聚 四氟乙烯製之墊圈，亦即密封材料4 1來固定不銹網（ S U S 3 16L)製之端板4 2。由而過濾器紅简4 5 兩端被關閉（閉合）成氣密，而在缸简4 5內就形成氣髏 儲存器4 6。將予以貫穿一邊端板4 2之通孔來插入不銹 鋼製管子4 3至缸简4 5內部。管子4 3將在過瀘器紅简 外被連接於氣髏導入管3 1，而在缸简4 5內之管子4 3 端部予以關閉。 在過濾器缸简4 5內之管子4 3上，配設總計2 4個 之約2mm孔徑之孔4 4。孔4 4係在管子4 3之周壁成 每移位9 0度而沿著朝軸方向延伸成4列來穿孔設置。各 列係沿著管子4 3之軸方向且隔著一定間隔來配置6個。 又相鄰接之列彼此，孔4 4乃配置成曲折狀（參差不齊狀 )0 安裝氣體供給用頭3 2之時，首先，令缸筒4 5，端 板4 2，密封材料4 1以如圖2所示依序排列。接著，使 管子4 3前端部分鬆弛地予以通過一邊端板4 2之通孔， 而使管子4 3前端部使之熔接固定於另一邊之端板4 2。 本紙張尺度適用中國國家標隼（CNS ) Α4規格（210Χ297公釐）_ ------.----- (請先閱讀背面之注意事項再填寫本頁) T -、τ A7 B7 293136 五、發明説明（8 ) 接著，以一邊之端板4 2朝另一邊端板4 2被壓住之狀態 來熔接固定管子4 3和一邊之端板4 2，使之管子4 3貫 穿用之通孔被閉合成氣密。再者爲了更完整地來防止端板 4 3或管子4 3等之金靥部分的腐蝕，亦可對於金屬部分 資施火焰嘖塗陶瓷等之防蝕處理。 氣酱供給用頭3 2係如圓4 A所示，過濾器紅简4 5 位於裝載用眞空室21上部之概略中央之位置，而配置成 與裝載用眞空室21之頂板之間可形成具有充分的間隙。 在裝載用眞空室2 1內，输送臂2 7當保持晶園W來等候 之時，將如圖4B所示，過濾器缸简4 5和晶圃W之中心 大略成一致，又此時，過濾器缸简4 5之軸和晶圓W之被 處理面成平行。因此，缸简4 5之多孔質板乃配置成對從 缸简4 5之軸對於晶園W之被處理面放下之垂直面上之線 形成對稱。 以構成如上述之氣體供給用頭3 2，當從氣髗導入管 3 1對於管子4 3供給氣體時，氣《會從管子之孔4 4流 出至過濾器缸简4 5之氣體儲存器4 6內。而氣體將通過 出口過濾器4 0之各細孔由缸简4 5表面整體朝3 6 0度 方向形成均勻地流出。因此，氣體之流出面積極大，對於 流量可使之降低流速。又氣體係在裝載用眞空室內以層流 狀態而朝3 6 0度方向流出，致使在輸送臂2 7上之晶園 W之被處理面，似乎以掃把來掃除般地流動。由而可盡可 能地抑制粒子之飛播，且粒子即使有飛揚，亦可防止粒子 掉落而附著於晶圈W表面。 本紙張尺度適用中國國家標準（€奶）八4規格（2丨0乂297公釐）_11_ ^^1 ^^^1 n^i ifm m «n » Λ'、τ (請先閱讀背面之注意事項再填"本頁) 經濟部中央標準局員工消費合作社印製 經濟部中央標隼局負工消費合作社印製 A7 B7 五、發明説明（9 ) 本實施例之氣髏供給用頭3 2，不僅可防止裝載用眞 空室2 1內之粒子飛揚而已，亦設計成可去除存在於所導 入氣觼中之〇· 〇l#m以上之粒子99. 9999%( 百分率）。以如此地令微細之粒子，以縮小出口過濾器4 0之細孔而僅以過濾作用去除之時，就會使壓力耗損成爲 過大。爲此，在本發明，除了利用出口過濾器4 0之過濾 作用，加上利用靜電吸著作用來進行去除微細粒子。例如 ，在本實施例之出口過濾器4 0之過濾層4 9之細孔平均 孔徑爲約0. 2〃m，而未滿該平均孔徑之粒子，會由出 口過濾器4 0所具有之靜電吸著作用而被捕捉於缸简4 5 之內表面，並予以去除。 又出口過濂器4 0之多孔質板係如上述，構成由支承 層4 7、中間層4 8及過濾層4 9所形成之多層構造。由 而具備小的平均孔徑之細孔的過濾層4 9之厚度可使之形 成2 0 pm〜3 0 A/m，故能在不增加壓力耗損之下，獲 得極高之過濾功能。又在支承層4 7和過濾層4 9之間， 因配設中間層4 8，故能解除所謂構成過濾曆4 9之陶姿 粒子埋入於構成支承層4 7之陶瓷粒子之問題。再者，由 於配置支承層4 7於缸简4 5之外面側，以致在觸摸操作 出口過濾器之時，並不會傷到主要部分之過濾層4 9。 考慮到出口過濾器4 0之靜電吸著作用，機械性强度 ，耐腐蝕性、耐熱性等時，做爲形成出口過瀘器4 0用之 多孔質板理想之材料，係有氣化鋁、氮化矽、碳化矽、石 英玻璃等之陶姿燒結體或氣化鋁合金等之金屬燒結體。尤 ( CNS ) ( 210X297^ ) _ γχ (請先閱讀背面之注意事項再填寫本頁) Λ 293136 A7 B7 五、發明説明（10 ) (請先閱讀背面之注意事項再填艿本頁) 其，在使用氣化鋁之時，最好其純度爲9 9%以上。再者 ，支承層4 7、中間層4 8及過濾層4 9，雖以如本實施 例由同一之材料來形成爲理想，惟將該等個別以另外之材 料來形成亦可。只是該場合時，至少爲主要部分之過濾層 4 9之材料，最好應從上述之材料內來選擇。 考慮到缸简4 5之容量及機械性强度等之時，最好出 口過濾器4 0之多孔質板之厚度爲1 . 5mm〜5mm爲 其理想。又多孔質板之層4 7、4 8、4 9之個個氣孔率 爲1 0%〜5 0%爲其理想。若氣孔率較5 0%更大之時 ，缸简4 5之機械性强度會降低，相反地氣孔率若較1 0 %更小之時，壓力耗損就會變大，而氣髗流量就會降低。 過濾層4 9之細孔平均孔徑爲0. 8^m〜0. 1 爲其理想。若過濾層49之細孔平均孔徑較〇. 8 只m更大時，不僅無法使氣髖中之粒子充分地加以去除， 而且從缸简4 5表面所流出之氣體亦難以形成層流狀態。 相反地，細孔之平均孔徑爲較0. 更小之時，壓力 耗損就變爲大，而氣髏流量會下降。又考慮到壓力耗損之 時，最好過濾層4 9之厚度爲1 0 0 //m以下爲其理想。 經濟部中央標準局員工消費合作社印装 以如此之出口過瀘器4 0之多孔質板的條件下，若以 例如1 0又/m i η〜1 0 0 i η之流置爲目檫之 時，多孔質板之外表面稹，亦即有效氣髗流出表面稹’應 使之爲7 5 Omrrf以上，最好構成1 5 0 Omrrf以上爲其 理想。合併此乙點和裝載用眞空室之尺寸來考慮時’ κ筒 4 5之外徑乃最好爲1 0mm〜3 0mm，長度爲5 0 本紙張尺度適用中國國家標準（CNS)A4規格UlOX297公釐）_ _ 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（11 ) mm〜3 0 Omm，更好者之長度爲5 Omm〜1 0 0 m m 0 圚5及圓6係顯示賙査參照圖1至圖4 B所陳述之裝 載用眞空室2 1之氣體供給用頭3 2之效果的實驗結果。 在有關顯示結果於圖5之實驗，乃計算晶園W搬入於 裝載用眞空室21內之前，和搬入於裝載用眞空室21內 ，一旦予以實施裝載用眞空室2 1內之排氣，並再一次恢 復至大氣壓且從裝載用眞空室2 1內搬出後之粒子數，而 求出兩者之差異者。再者，使裝載用眞空室21內，從所 定之眞空狀態恢復至大氣壓所需之時間予以設定爲3 0秒 。而粒子數目之對象乃以尺寸0. 2 //m以上爲其對象。 圊5中，横軸乃顯示測試號碼1〜9，縱軸乃顯示附 著於6吋直晶園W之0. 以上之粒子數。曲線A、 B、C、D係個別顯示在圖1所示之位置未安裝氣體供給 用頭32或有安裝時之例子（example )A、B、C、 D之結果。在例A係未安裝氣髏供給用頭3 2而從導入管 3 1直接導入氣《於裝載用眞空室2 1內者。例B係使用 具備外徑1 9mm、長度爲1 0 Omm之陶瓷製過濾器缸 简4 5之氣體供給用頭3 2。亦即，缸筒4 5之出口過濾 器4 0係形成圓3所示之多層構造，其過濾暦4 9之細孔 平均直徑爲0. 2#m。在例C則使用具備外徑9mm、 長度7 5mm、細孔之平均直徑爲3 #πι之不銹鋼燒結嫌 製過濾器缸筒4 5之氣髏供給用頭3 2。在例D乃不安裝 氣«供給用頭3 2，而是以安裝直徑1 5 Omm、細孔平 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐）_ μ - (請先閱讀背面之注意事項再填寫本S ) 訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（12 ) 均直徑1 之不銹鋼燒結髗製過濾器於導入管3 1之開 口端來代替者。 在顯示結果於圚6中之實驗，將對於氣體供給用頭 3 2之設置場所和附著之粒子數之關係加以調査。此實驗 中，使用了具備與上述例B同樣之陶瓷製過濾器缸简4 5 之氣《供給用頭3 2。實驗之順序係與在圖5顯示結果之 實驗爲相同。 圖6中，横軸係顯示測試號碼1〜9 ，而縱軸係顯示 附著於6吋直徑晶画W之0. 2mm以上之粒子數。曲線 E、F、G係個別顯示在圓7顯示概略之氣髗供給用頭 3 2之設置場所例E、F、G之結果。亦即，例E爲晶園 W之正上方之位置，例F爲晶園W之側方位置，例G爲晶 圓W之下方位置。 如圓6所示，例E之位置較例F、G者更優異，亦即 ，可察明氣髏供給用頭3 2配設於晶_W之上方爲最佳。 例E之場合，粒子之附著數成爲平均3個左右，係粒子附 著量最爲減低之狀況。該狀況，推測係在配置氣髄供給用 頭3 2於晶園W之上方時，從氣镰供給用頭3 2所流出之 氣體，首先會碰衝於晶園W，而後會形成朝裝載用眞空室 2 1底部等之氣髏流動，因此，即使產生粒子之飛播，亦 不會使粒子附著於晶圓W。然而，由於設計上之限制（限 定）而無法配置氣髗供給用頭3 2於裝載用眞空室2 1上 方之時，亦可予以配置於晶圆W之側方或下方亦可。即使 配置氣雔供給用頭3 2於如此之位置，亦較習知者可使粒 本紙張尺.度適用中國國家標準（CNS ) Λ4規格（210X297公釐） 15 ------·---^ -- (請先間讀背而之注意事項再填寫本頁) 訂 A7 B7 293136 五、發明説明（〗3 ) 子之附著量使之形成1/10以下之程度。 (請先閱讀背面之注意事項再填寫本頁) 又對於安裝具有較大網目孔之網目（網狀）過濾器於 導入管3 1開口端之場合，亦進行了實驗。在此實驗，網 狀過濾器係聚四氟乙烯等之樹脂或金屬製，而設定爲2 0 至3 0網目（各網目孔尺寸爲約lmm四方）之尺寸。然 而，對安裝如此之過瀘器的裝載用眞空室重複地予以進行 性能實驗之結果，看出了如下之問題點。 經濟部中央標準局員工消費合作社印製 如此之程度的過濾器之網目尺寸時，會形成過大，以 致無法充分地抑制壓力之急激的變動。又在處理室內使用 有腐蝕性氣髓之時，極難以完全隔断（切斷）從處理室擴 散腐蝕性氣體至裝載用眞空室內之情事。爲此，過濾器之 金屬製構件，例如過濾器本身，或螺栓等之安裝用構件就 容易被腐蝕。又過濾器會更予以限制氣髋導入口之開口面 稹，以致會使壓力耗損變成更大。爲此，在使室內壓力恢 復至大氣壓之時，就對於壓力調整會花費時間。又過瀘器 本身及其安裝部分之機械性之强度因有界限，以致無法長 久地維持過濾器挾持壓力差很大之狀態。亦即，因無法緩 慢地打開氣體導入閥，致使Μ力變動使之縮小之情亊成爲 具有界限。 圓8係顯示配設有氣«供給用頭3 2之裝載用眞空室 之其他實施例之概念圖。 圖8所示之裝載用眞空室51具備有暫時性地收容晶 園用之架子（rack ) 5 5，並在其上方配設氣體供給用 頭3 2。當架子5 5上裝置6时直徑之晶_W之時，氣體 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）_ 16 _ 經濟部中央標準局員工消費合作社印繁 A7 B7 五、發明説明（l4 ) 供給用頭3 2和晶_W之位置關係形成與圖4 B所示之關 係相同。氣醴導入管5 2係藉閥V 1被連接於氣《供給用 頭3 2之管子4 3 °又在裝載用眞空室5 1予以連接排氣 管5 3，並在排氣管配設閥V2。再者，微調（用）閥 V 3乃形成旁通閥V 2而配設於排氣管5 3 °又予以配設 測量裝載用眞空室5 1內之壓力用之壓力計（錶）5 4。 表1至表3係顛示使用圇8所示之裝載用眞空室5 1 來讕査氣髖供給用頭3 2之效果之實驗結果。 首先，做爲例1將具備外徑1 9mm、長度1 0 0 mm陶瓷製過濾器缸筒4 5之氣體供給用頭3 2配設於裝 載用眞空室5 1內。亦即，缸简4 5之出口過濾器4 0係 形成如圊3所示之多層構造，而其過濾層4 7之細孔平均 直徑爲0. 2pm。接著，裝置6吋直徑之晶園W於架子 5 5上，並減壓裝載用眞空室5 1內成爲5X1 0一2 To r r。而後，供給流置形成一定之高純度氮氣供予氣 體供給用頭3 2，以使之流出至裝載用眞空室5 1內，而 予以升壓裝載用眞空室5 1內直至成大氣壓。將該時之裝 載用眞空室5 1內之壓力和氣懺之流置之關係予以顯示於 圖9。接著，取出晶圓W，並以晶園表面缺陷（瑕疵）檢 査裝置測量附著於其上面之粒子數和大小。且以同樣之測 試予以進行3次來獲取測置値之平均値。表1之例2、3 、4，除了令個別之陶瓷製過濾器缸筒4 5之長度使之成 爲5 Omm、2 0 0mm、3 0 Omm之外，其他則以與 例1同樣之條件來實施測試3次。惟對於例2、3、4、 本紙張尺度適用中國國家標準（CNS ) Μ規格（210X297公釐）_ . (請先閲讀背而之注意事項再填巧本頁) Λ 訂 A7 B7 293136 五、發明説明（l5 ) 僅予以測量粒子之總計數目（數置）。 做爲比較例1 ，除了未安裝氣體供給用頭32之狀態 下，從導入管5 2端部直接導入氣髏以外，其他則以與例 1同樣之條件來實施測試3次。做爲比較例2，除了使用 長度爲1 0 Omm，平均細孔直徑爲3 μιη之金羼製過滅 器紅简之外，其他則以與例1同樣之條件來實施測轼3次 。惟對於比較例1、2，僅予以測量粒子之總計（共計） 數置。 將例1〜4及比較例1、2之實驗結果顯示於表1 I I I I I I π —訂 一 (請先閲讀背面之注意事項#填寫本頁) 經濟部中央標率局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐）_ 18 A7 B7 五、發明説明（16 ) 表1 例 比較例 1 2 3 4 1 2 粒子 之直 徑（ μ in) 0 . 2〜 0 . 3 0 . 7 — — — — 12.0 0 · 3〜 0 . 5 0.3 — — — — 15.7 0 . 5〜 2.0 — — — — 37 . 8 合計 3 . 0 8.0 2.5 2.0 2411.7 65.0 (請先閱讀背面之注意事項再填，'!,:?本頁) Λ -5 經濟部中央標準局0貝工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） 19 經濟部中央標準局員工消費合作社印製 293136 五、發明説明（l7 ) 做爲例5將具備外徑1 9mm、長度1 0 Omm陶瓷 製迥濾器缸简4 5之氣髖供給用頭3 2配設於裝載用眞空 室5 1內。亦即，缸简4 5之出口過濾器4 0係形成如圖 3所示之多屠構造，而其過濾層4 7之細孔平均直徑爲 0. 2〃m。而除了供給流置形成一定之髙純度氮氣之外 ，其他則以與例1同樣之條件來實施測試，並以晶圓表面 缺陷檢査裝置來測置粒子之數量和大小。此時之裝載用眞 空室5 1內之壓力和氣髏流置之關係，將顯示於圖1 0。 且予以進行3次同樣之測試來獲得測置値之平均値。 做爲表2之例6、7、8，除了令個別之陶瓷製過滅 器缸简4 5之長度使之成爲5 Omm、2 0 Omm、 3 Ο 0 m m之外，其他則以與例5同樣之條件來實施測試 3次。惟對於例6、7、8、僅予以測置粒子之總計數目 (數 1： ) ° 做爲比較例3，除了未安裝氣體供給用頭3 2之狀態 下，從導入管5 2端部直接導入氣體以外，其他則以與例 5同樣之條件來實施測試3次。做爲比較例4，除了使用 長度爲1 0 Omm，平均細孔直徑爲3 Mm之金屬製過減 器紅简之外，其他則以與例5同樣之條件來實施測試3次 。惟對於比較例3、4，僅予以測置粒子之總計數置。 將例5〜8及比較例3、4之實驗結果顯示於表2 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）_ (請先閱讀背面之注意事項再填艿本頁) Λ 、\'a A7 B7 五、發明説明（is ) 表2 例 比較例 5 6 7 8 3 4 粒子 之直 徑（ μ m ) 0 . 2〜 0.3 1.3 —— — — — 15.0 0 . 3〜 0.5 0.3 — — — -- 18.0 0 · 5〜 3.7 — — — — 56.7 合計 5.3 12.0 5.3 2‘7 696.7 99.7 (請先閱讀背面之注意事項再填寫本頁) Λ -訂 經濟部中央橾準局員工消費合作社印製 做爲例9將具備外徑1 9mm、長度1 0 Omm陶瓷 製迥濾器缸简4 5之氣體供給用頭3 2配設於裝載用眞空 室5 1內。亦即，缸筒4 5之出口過濾器4 0係形成如圓 3所示之多層梅造，而其過濾屠4 7之細孔平均迪：徑爲 〇 · 2 〃m。而除了供給高純度氮氣形成從供給初期至中 期之間流董會伴鼸著時間成比例地增大以外，其他則以與 本紙張尺度適用中國國家標準（CNS ) Λ4規格（210X297公釐）_ 21 _ A7 B7 293136 五、發明説明（19 ) 例1同樣之條件來實施測試，並以晶園表面缺陷檢査裝置 來測董粒子之數量和大小。此時之裝載用眞空室5 1內之 壓力和氣體流量之關係，將期示於圓11◊且予以進行3 次同樣之測試來獲得测量値之平均値。 做爲表3之例1 0、1 1、1 2，除了令個別之陶姿 製過濾器缸简4 5之長度使之成爲5 Omm、2 0 Omm 、3 0 0 m m之外，其他則以與例9同樣之條件來實施測 試3次。惟對於例1 0、1 1、1 2、僅予以測量粒子之 總計數目（數量〉。 做爲比較例5，除了未安裝氣體供給用頭3 2之狀態 下，從導入管5 2端部直接導入氣體以外，其他則以與例 9同樣之條件來實施測試3次。做爲比較例6，除了使用 長度爲1 0 Omm，平均細孔直徑爲3 //m之金靥製過嫌 器缸简之外，其他則以與例9同樣之條件來實施測試3次 。惟對於比較例5、6，僅予以測置粒子之總計數置。 將例9〜1 2及比較例5、6之實驗結果顯示於表3 ------.--乂 \------訂----一一f (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度通用中國國家標準（CNS ) Λ4規格（210X297公釐）_ 22 A7 293136A7 B7 293136 V. Description of the invention (1) [Field of invention] (Please read the precautions on the back before filling in this page) The present invention is related to the substrates to be processed such as semi-conducting crystal garden or LCD (liquid crystal display) substrates, etc. , A gas supply head used in a system for carrying out semi-conducting treatment and a ft empty chamber for loading using the head, in particular, a gas supply head for preventing particle contamination of a processed substrate in a reduced-pressure environment And the empty chamber for loading using the head. [Prior Art] Generally, a semiconductor processing system is provided with a processing chamber and a loading empty chamber (preparation chamber) which is connected to the processing chamber via a gate. There are various types of processing gas used in the processing chamber. For example, the substrate to be processed such as a semiconductor wafer or L C. D substrate is processed under reduced pressure. The ft empty chamber for loading is usually connected to the inert gas supply system and the exhaust system, and a pressure adjustment can be performed independently of the processing chamber. It is also possible to separately equip the empty space for loading into the crystal garden and the empty space for loading out. Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. During semiconductor processing, for example, the semiconductor semiconductor system is first moved into the empty chamber for loading. Next, the air skeletons in the empty space for loading are discharged and replaced, so that the empty space for loading is formed into a decompression environment that is almost the same as that in the processing chamber. Next, the gate is opened to transfer the crystal pattern from the empty chamber for loading to the processing chamber, and then the gate is closed and wafer processing is performed in the processing chamber. After Jingyuan processing, open the door and transfer the wafer to the empty chamber for loading. Next, the gate is closed to discharge and replace the gas in the empty chamber for loading so that the empty chamber for loading becomes an environment of inert gas such as nitrogen. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) 293136 V. Description of the invention (2) After removing the wafer from the empty space for loading. In the empty chamber for loading, there is a possibility that the surface of the crystal garden generated by the introduction of the emotion or air is contaminated by particles. One of the reasons is that the particles such as tiny dust attached to the inner wall of the empty space for loading are generated by the flying of the gas. Another reason is that the fine particles mixed with the introduced gas itself are transported into the empty chamber for loading together with the gas skeleton to cause 0. The general method to prevent the flying of particles is to gradually introduce the atmospheric air The opening degree of the valve is known as the so-called slow vent method which suppresses the increase of the gas flow rate. However, care should be taken to adjust the valve opening in any case. In the state of extinguishing the state, especially from the high stress-reducing state and at the moment when the valve is opened, the gas will flow due to the sudden change of pressure, resulting in loading The particles in the empty room will fly. And it cannot prevent the intrusion of fine particles mixed into the gas itself. [Summary of Invention] Printed by the Employees Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) Therefore, the purpose of the present invention is to provide a way to prevent For the purpose of supplying the head for supplying the gas skeleton of the particle contamination of the processed surface of the processed substrate generated by the introduction of the gas and the empty chamber for loading using the head. The gas supply head according to the first aspect of the present invention is mainly used in the gas-tight housing of the semi-conducting «processing system, so that the substrate to be processed in the aforementioned system is supported for gas for pressure adjustment The sauce is used for the inside of the above-mentioned shell, and has the following: This paper standard is applicable to the Chinese Standard for the Sleepy Family (CNS) Α4 specification (210Χ297 mm) A7 B7 5. Description of the invention (3) It is connected to the introduction of the above-mentioned gas to the above-mentioned shell Gas trap container for the gas inlet tube: and an outlet filter with a porous filter layer having a plurality of fine pores connecting the inside of the trap and the outside, and the average diameter of the pores It is 0.8 // m ~ 0. Li / m, the porosity of the aforementioned filter layer is 10% ~ 50%. The plenum chamber for loading according to the second aspect of the present invention is mainly a plenum chamber for loading a semiconducting processing system for processing substrates, and is provided with: an airtight housing having an opening for passing the substrate: opening the opening A mechanism that can be opened and closed (closed) to be airtight: a supporting mechanism for supporting the aforementioned substrate inside and outside; a gas introduction tube for introducing gas for pressure adjustment; for exhausting the inside of the housing An exhaust system; connected to the gas hip introduction tube for supplying the gas from the gas skull introduction tube to the gas supply head for internal use while supporting the substrate on the support mechanism; Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling in this page) The gas supply head is equipped with a gas hip reservoir connected to the gas inlet tube and has the gas storage 8 # m〜0 · l # m, the aforementioned filter layer of Porosity 10% 0% ~ 5. [Detailed description of suitable embodiments] Circle 1 shows the use of paper sheets for loading empty chambers in accordance with one embodiment of the present invention, using Chinese national standards (CNS & A4 specifications (210X297 mm) employees of the Central Standards Bureau of the Ministry of Economic Affairs Printed by the consumer cooperative A7 __B7 V. Description of the invention (4) A schematic diagram of the semiconductor crystal garden etching system. The etching system shown in Figure 1 is equipped with a processing chamber 1 and a preparation room for the crystal garden to move in and out, That is, the plenum chamber for loading 21. The processing chamber 1 is provided with a gas-tight casing 2 having one opening 3, and the plenum chamber for loading 2 1 is provided with two openings 2 3, 2 4 facing each other Close to the outside 2 2. The opening 3 of the processing chamber 1 and the opening 23 of the empty chamber 2 1 for loading are connected to the processing chamber 1 in a gas-tight manner by the valve 18. The opening of the empty chamber 2 1 for loading 2 4, the gate valve 19 is connected to the in / out section in a gas-tight manner, such as a card E mounting section for accommodating a plurality of crystal patterns. The upper part of the processing chamber 1 is connected to the reaction gas supply system 4, The lower part is connected to the exhaust system. The processing room 1 is equipped with a stowage platform and The sensor 6 that functions as an external electrode, and the shower (shower) electrode 7 that acts as a shower head for the upper electrode and the reaction gas supply system 4 opposite to the lower electrode. The sensor 6 is a matching (coupling) circuit 8 It is connected to the high-frequency power supply 9, and the shower electrode 7 is grounded, and the sensor 6 is surrounded by a circle. In order to fix the wafer W to the sensor 6, a clip 11 that can move up and down is provided. , Which is equipped with a cooling jacket for introducing the refrigerant to cool the sensor 6, and a line 13 for supplying the hot gas between the sensor 6 and the wafer W. The upper part of the empty chamber 21 for loading is connected to An inert gas such as nitrogen for pressure adjustment or gas replacement, or a gas supply system 2 for supplying gas (cleaning) gas, etc., and an exhaust system 26 are connected to the lower part. Therefore, The empty chamber for loading 2 1 is formed to be independently adjustable. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 7 (please read the precautions on the back and fill in this page ??) Order_ ^ 3136__ V. Description of the invention (5) Adjust the internal force. The center of the empty space 21 for loading is provided with a transport arm 2 7 for transporting the crystal garden W through the openings 23, 24. The gas supply system 25 for the loading »empty space 2 1 is provided to penetrate airtightly The housing 22 is connected to the gas introduction tube 3 1 of the gas supply source. The front end of the introduction tube 3 1 is connected to the gas supply head 3 2. The introduction tube 3 1 is controlled by the regulator 3 3 and the valve 3 4 It is connected to an inert gas such as nitrogen gas or a gas supply source 35 such as air. The components 3 3 to 3 5 are controlled by the controller 36. Next, the crystal garden using the etching system illustrated in FIG. 1 will be described. An example of etching process. Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling out this page) First, open the gate valve 19 of the empty chamber 21 for loading to communicate with the entrance and exit, and move the wafer W to be processed Into the empty chamber 21 for loading. Next, the gate valve 19 is closed to keep the inside of the empty space 21 for loading airtight, and the inside of the empty space 21 for loading is exhausted by the exhaust system 26 to bring it into a decompressed state. Then, the same ambient gas as the processing chamber 1 is introduced into the empty chamber 21 for loading from the head 3 2 for gas supply, and the empty chamber 2 for loading is replaced with the gas in the processing chamber 1 (the first gas Sickle import process). In addition, the introduction process of the first air snake can be performed simultaneously with the exhaust process, and the exhaust system can also be provided with a mandatory exhaust mechanism. Gas replacement is carried out in the empty chamber 21 for loading. Next, the airtight chamber 21 for loading and the gate valve 18 for the processing chamber 1 are opened in an airtight manner to communicate the emptiness chamber 21 for loading and the processing chamber 1. This paper scale is applicable to the Chinese National Standard (CNS) Λ4 specification (210Χ297). A7 _ B7 is printed by the Consumer Labor Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (6). Then, the crystal park W is transferred to the processing room 1. , And placed on the inductor 6 and fixed with a clip 11. Next, the gate valve 18 is closed, so that the empty chamber 21 for loading and the processing chamber 1 are individually sealed to be airtight. Then, while supplying an etching gas such as a gas-based gas from the reaction gas supply system 4 into the processing chamber 1, a high frequency is applied between the upper and lower electrodes 7, 6 to make the etching gas into a plasma and This plasma is used to etch the crystal garden W. After etching the wafer W, the gate valve 18 is opened to communicate the empty chamber 21 for loading and the processing chamber 1. Next, the wafer W is transferred into the empty chamber 21 for loading, but at this time, a part of the ambient gas in the processing chamber 1 will also be moved into the empty chamber 21 for loading. Next, the gate valve 18 is closed to individually isolate the loading empty chamber 21 and the processing chamber 1 into airtightness. Then, the exhaust system 26 exhausts air to make the empty space 21 for loading into a decompressed state. Next, on the one hand, exhaust the empty space 21 for loading, and at the same time introduce, for example, emotive air from the head 32 for supplying the air skeleton, so that the empty space 21 for loading is replaced by the atmosphere (second air skeleton introduction process ). Then, the gate valve 19 is opened so that the empty chamber 21 for loading communicates with the access section, and the wafer is taken out. As shown in FIG. 2, the gas sauce supply head 32 has an outlet filter 40 formed as a hollow cylinder 4 5 having an outer diameter of about 19 mtn and a length of about 100 mm. The outlet filter 40 is composed of an alumina ceramic porous plate with a thickness of about 2 mm. As indicated by circle 3, the porous plate constituting the outlet filter 40 is formed in a multi-layer structure formed by a support layer 47, an intermediate layer 48 and a passover layer 4 9 in this order from the outside. The average diameter of the pores in the support layer 4 7 'intermediate layer 4 8 and the filter layer 4 9 respectively is formed to the size of this paper and is applicable to the Chinese National Standard (CNS) A4 specification (2Ι〇Χ297 mm) -9 — Please read the precautions before filling this page) Λ A7 B7 printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Invention description (7) About 1 0 # m, about l // m and about 0.2 " m ° supports the thickness of the sludge 4 7, the middle layer 4 8 and the filter layer to be about 2 mm, 2 0 to 30 m and 2 0 to 3 0 // m. When manufacturing the outlet filter 40, first, the hollow cylinder is formed by burning the thick support layer 47, then, the material of the intermediate layer 48 is coated on the inner surface and baked at the same time, and finally on the inner surface The material of the filter layer 49 is applied while baking. The end plates 4 made of stainless steel mesh (SUS 3 16L) are fixed to the ends of the filter red Jan. 4 or the porous cylinder Jan. 4 by means of a gasket made of polytetrafluoroethylene, that is, the sealing material 4 1. . As a result, the two ends of the filter red Jane 4 5 are closed (closed) to be airtight, and the gas skull reservoir 4 6 is formed in the cylinder Jane 4 5. The stainless steel pipe 43 is inserted through the through hole of one end plate 42 to the inside of the cylinder block 45. The tube 4 3 will be connected to the gas introduction tube 3 1 outside the red filter, and the end of the tube 4 3 in the cylinder 4 5 will be closed. A total of 24 holes 4 4 with a diameter of about 2 mm are arranged on the tube 4 3 in the filter cylinder 4 5. The holes 44 are perforated in the circumferential wall of the tube 43 at a displacement of 90 degrees and extending in four rows along the axis. Each row is arranged along the axial direction of the tubes 43 at a certain interval. In the adjacent rows, the holes 4 4 are arranged in a zigzag shape (uneven shape) 0 When installing the gas supply head 3 2, first, make the cylinder barrel 4 5, the end plate 42 2, and the sealing material 4 1 Arrange in order as shown in Figure 2. Next, the front end of the tube 43 is loosely passed through the through hole of one end plate 42, and the front end of the tube 43 is welded and fixed to the other end plate 42. This paper scale is applicable to China National Standard Falcon (CNS) Α4 specification (210Χ297mm) _ ------.----- (please read the precautions on the back before filling this page) T-, τ A7 B7 293136 V. Description of the invention (8) Next, the end plate 42 on one side is pressed against the end plate 42 on the other side to weld and fix the pipe 4 3 and the end plate 42 on one side so that the pipe 4 3 penetrates The through hole is closed to be airtight. Furthermore, in order to prevent the corrosion of the gold plate parts such as the end plate 43 or the tube 43, the metal parts can also be treated with anticorrosive treatment such as flame coating ceramics. The gas sauce supply head 3 2 is shown as a circle 4 A. The filter red 4 5 is located at the approximate center of the upper portion of the empty space 21 for loading, and can be formed between the top plate of the empty space 21 for loading Ample clearance. In the empty chamber 21 for loading, the conveying arm 27 will hold the crystal garden W while waiting, as shown in FIG. 4B, the center of the filter cylinder 4 5 and the center of the crystal garden W will be roughly the same, and at this time, The axis of the filter cylinder 4 5 is parallel to the processed surface of the wafer W. Therefore, the porous plate of the cylinder block 45 is arranged to be symmetrical with respect to the line on the vertical plane from the axis of the cylinder block 45 to the treated surface of the crystal park W. With the configuration of the gas supply head 32 as described above, when gas is supplied from the gas inlet tube 3 1 to the tube 4 3, the gas “will flow out from the hole 4 4 of the tube to the gas reservoir 4 of the filter cylinder 4 5 6 within. The gas will flow through the pores of the outlet filter 40 from the entire surface of the cylinder 45 to the direction of 360 degrees to form a uniform flow. Therefore, the outflow area of the gas is extremely large, and the flow rate can be reduced for the flow rate. The gas system flows out in the direction of 360 degrees in a laminar flow state in the empty chamber for loading, so that the treated surface of the crystal garden W on the transport arm 27 flows as if it were swept with a broom. As a result, the flying of the particles can be suppressed as much as possible, and even if the particles fly, the particles can be prevented from falling and adhering to the surface of the crystal ring W. The size of this paper is in accordance with Chinese National Standard (€ Milk) 8.4 specifications (2 丨 0 297mm) _11_ ^^ 1 ^^^ 1 n ^ i ifm m «n» Λ ', τ (please read the notes on the back first Matters refilled " This page) Printed by the Ministry of Economic Affairs, Central Bureau of Standards, Employee Consumer Cooperative Printed by the Ministry of Economic Affairs, Central Standard Falcon Bureau, Negative Work Consumer Cooperative, A7 B7 5. Description of the invention (9) The head of the gas supply in this embodiment 3 2 Not only can prevent the particles in the empty space 21 for loading from flying, but also designed to remove 99.9999% (percentage) of the particles above 〇. 〇l # m present in the introduced gas. When the fine particles are reduced in such a way that the fine pores of the outlet filter 40 are reduced by filtration alone, the pressure loss becomes excessive. For this reason, in the present invention, in addition to the filtering action of the outlet filter 40, the use of electrostatic absorption is used to remove fine particles. For example, the average pore size of the pores of the filter layer 4 9 of the outlet filter 40 in this embodiment is about 0.2 mm, and particles less than the average pore size will be discharged by the outlet filter 40. Absorb the role and be captured on the inner surface of the cylinder 4 5 and remove it. As described above, the porous plate of the outlet port 40 has a multi-layer structure formed by the support layer 47, the intermediate layer 48, and the filter layer 49. As a result, the thickness of the filter layer 49 with fine pores having a small average pore diameter can be formed into 20 pm to 30 A / m, so that an extremely high filtration function can be obtained without increasing pressure loss. In addition, the intermediate layer 48 is provided between the support layer 47 and the filter layer 49, so that the problem that the ceramic particles constituting the filter calendar 49 is embedded in the ceramic particles constituting the support layer 47 can be solved. Furthermore, since the supporting layer 47 is arranged on the outer surface side of the cylinder 4 5, when the outlet filter is touched and operated, the main part of the filter layer 49 will not be hurt. Considering the electrostatic absorption function, mechanical strength, corrosion resistance, heat resistance, etc. of the outlet filter 40, it is an ideal material for forming the porous plate for the outlet filter 40, which includes vaporized aluminum, Ceramic sintered body such as silicon nitride, silicon carbide, quartz glass, etc. or metal sintered body such as vaporized aluminum alloy. You (CNS) (210X297 ^) _ γχ (please read the precautions on the back before filling in this page) Λ 293136 A7 B7 V. Description of the invention (10) (please read the precautions on the back before filling in the page) When using vaporized aluminum, the purity is preferably more than 99%. Furthermore, although the support layer 47, the intermediate layer 48, and the filter layer 49 are preferably formed of the same material as in this embodiment, they may be formed of other materials. In this case only, the material of at least the main filter layer 49 should preferably be selected from the above materials. In consideration of the capacity and mechanical strength of the cylinder 4 5, the thickness of the porous plate of the outlet filter 40 is preferably 1.5 mm to 5 mm. It is also ideal that the porosity of the layers 4 7, 4, 8 and 4 9 of the porous plate is 10% to 50%. If the porosity is greater than 50%, the mechanical strength of the cylinder will decrease. On the contrary, if the porosity is less than 10%, the pressure loss will increase, and the gas flow will be reduce. 1 的 为 理想。 The average pore diameter of the filter layer 4 9 is 0. 8 ^ m ~ 0. 1 is its ideal. If the average pore diameter of the pores of the filter layer 49 is larger than 0.8 m, not only can the particles in the gas hip not be sufficiently removed, but also the gas flowing from the surface of the cylinder 4 5 can hardly form a laminar flow state. Conversely, when the average pore diameter of the pores is smaller than 0., the pressure loss becomes larger, and the gas flow rate will decrease. When pressure loss is also considered, it is preferable that the thickness of the filter layer 4 9 is 1 0 0 // m or less. Under the condition that such a porous plate for exporting the filter 40 is printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs, if the flow of for example 10 and / mi η ~ 1 0 0 i η is the target In addition, the outer surface of the porous plate, that is, the effective gas trapping out of the surface can't be more than 7 5 Omrrf, preferably 1 5 0 Omrrf is ideal. When considering this point and the size of the empty chamber for loading, the outer diameter of the κ tube 4 5 is preferably 10 mm to 30 mm, and the length is 50. The paper size is applicable to China National Standard (CNS) A4 specification UlOX297. ) _ _ Printed A7 B7 by the Employees ’Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (11) mm ~ 3 0 Omm, the better length is 5 Omm ~ 1 0 0 mm 0 圚 5 and circle 6 series display Refer to the experimental results of the effects of the gas supply head 3 2 of the plenum 21 for loading described in FIGS. 1 to 4B. In the experiment related to the results shown in FIG. 5, it was calculated that the crystal garden W was moved into the empty space 21 for loading and before being moved into the empty space 21 for loading. Once the exhaust in the empty space 21 for loading was carried out, and The number of particles after being restored to atmospheric pressure again and carried out from the empty chamber 21 for loading was determined as the difference between the two. In addition, the time required for returning to the atmospheric pressure from the predetermined empty state in the empty space 21 for loading is set to 30 seconds. The object of the number of particles is the object whose size is 0.2 / m or more. In 圊 5, the horizontal axis shows the test numbers 1 ~ 9, and the vertical axis shows the number of particles of 0 or more attached to the 6-inch straight crystal garden W. Curves A, B, C, and D are the results of the examples A, B, C, and D where the gas supply head 32 is not installed or is installed at the position shown in FIG. 1. In the case A system, the head 3 2 for supplying the air skeleton is not installed, and the gas is directly introduced from the introduction pipe 3 1 into the empty chamber 21 for loading. Example B uses a ceramic filter cylinder with an outer diameter of 19 mm and a length of 100 mm. A gas supply head 32 is used. That is, the outlet filter 40 of the cylinder 4 5 is formed into a multi-layer structure shown in a circle 3, and the average diameter of the pores of the filter rod 4 9 is 0. 2 # m. In Example C, a gas supply head 32 having a stainless steel sintering suspect filter cylinder 4 5 having an outer diameter of 9 mm, a length of 75 mm, and an average diameter of pores of 3 # πι was used. In Example D, the gas supply head 3 2 is not installed, but the Chinese national standard (CNS) A4 specification (210X 297 mm) is applied at the installation diameter of 15 Omm and fine-bore plain paper. _ Μ-(please first Read the precautions on the back and fill in this S) Printed A7 B7 printed by the employee consumer cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (12) Stainless steel sintered high-grade filters with an average diameter of 1 are replaced at the open end of the introduction tube 31 By. In the experiment in which the results are shown in Fig. 6, the relationship between the installation location of the gas supply head 32 and the number of attached particles will be investigated. In this experiment, a gas supply head 3 2 having the same ceramic filter cylinder 4 5 as in Example B above was used. The sequence of the experiment is the same as the experiment shown in Figure 5. In FIG. 6, the horizontal axis shows the test numbers 1 to 9, and the vertical axis shows the number of particles attached to the 6-inch-diameter crystal W of 0.2 mm or more. Curves E, F, and G are individually displayed in circle 7 and show the results of the installation location examples E, F, and G of the outline of the head 2 for supply of gastrointestinal tracts. That is, Example E is the position directly above the crystal park W, Example F is the side position of the crystal park W, and Example G is the position below the crystal circle W. As shown in the circle 6, the position of Example E is more excellent than those of Examples F and G, that is, it can be seen that it is best to arrange the head 32 for supplying the gas skull above the crystal_W. In the case of Example E, the number of particles attached is about 3 on average, which means that the amount of particles attached is the most reduced. In this situation, it is presumed that when the gas supply head 3 2 is arranged above the crystal garden W, the gas flowing out of the gas sickle supply head 3 2 will first hit the crystal garden W, and then it will be formed for loading. The air skeletons at the bottom of the empty chamber 21 flow, so that even if the particles fly, the particles will not adhere to the wafer W. However, due to design limitations (limitations), it is not possible to arrange the gas supply head 3 2 above the empty chamber 2 1 for loading, but it may also be arranged laterally or below the wafer W. Even if it is equipped with the head 3 2 in such a position, the paper ruler can be used more easily than the conventional ones. The degree is applicable to the Chinese National Standard (CNS) Λ4 specification (210X297mm) 15 ------ ·- -^-(Please read the notes before you fill in this page again) Order A7 B7 293136 V. Description of the invention (〗 3) The amount of attachment of the child is made to be less than 1/10. (Please read the precautions on the back before filling in this page). Experiments have also been conducted for the installation of mesh (mesh) filters with larger mesh holes at the open end of the introduction tube 31. In this experiment, the mesh filter is made of resin or metal such as polytetrafluoroethylene, and is set to a size of 20 to 30 mesh (the mesh size of each mesh is about 1 mm square). However, the results of repeated performance tests on the empty space for loading with such a filter installed revealed the following problems. When the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs prints such a large-scale filter, the size of the filter may be too large to sufficiently suppress the sudden changes in pressure. When corrosive gas is used in the processing room, it is extremely difficult to completely cut off (cut off) the diffusion of corrosive gas from the processing room into the empty room for loading. For this reason, the metal components of the filter, such as the filter itself or the mounting components such as bolts, are easily corroded. And the filter will further restrict the opening surface of the air hip inlet, so that the pressure loss will become greater. For this reason, when the indoor pressure is restored to atmospheric pressure, it takes time to adjust the pressure. Moreover, the mechanical strength of the filter itself and its installation parts are limited, so that it is impossible to maintain the state where the filter holding pressure is very different for a long time. In other words, since the gas introduction valve cannot be opened slowly, the change in the M force is reduced and becomes limited. Circle 8 shows a conceptual diagram of another embodiment of the empty chamber for loading equipped with a gas supply head 32. The loading empty chamber 51 shown in Fig. 8 is provided with a rack 5 5 for temporarily storing the crystal, and a gas supply head 32 is arranged above it. When the shelf 5 5 is equipped with a 6-diameter crystal _W at the time, the gas paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ 16 _Instant Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs, Indochina A7 B7 Five Description of the invention (l4) The positional relationship between the supply head 32 and the crystal_W is the same as the relationship shown in FIG. 4B. The gas inlet pipe 5 2 is connected to the gas pipe 3 of the supply head 3 2 via the valve V 1 and the exhaust chamber 5 3 is connected to the empty chamber 5 1 for loading, and a valve is arranged in the exhaust pipe V2. Furthermore, the fine-tuning (use) valve V 3 forms a bypass valve V 2 and is arranged in the exhaust pipe 5 3 ° and is also equipped with a pressure gauge (table) 5 4 for measuring the pressure in the empty chamber 5 1 for loading . Tables 1 to 3 are experimental results showing the effect of using the empty chamber 5 1 for loading shown in FIG. 8 to investigate the effect of the head 3 2 for gas hip supply. First, as an example 1, a gas supply head 3 2 having a ceramic filter cylinder 4 5 having an outer diameter of 19 mm and a length of 100 mm is arranged in the empty chamber 5 1 for loading. That is, the outlet filter 40 of the cylinder 4 5 is formed into a multilayer structure as shown in FIG. 3, and the average diameter of the pores of the filter layer 47 is 0. 2pm. Next, a 6-inch-diameter crystal garden W was installed on the shelf 55, and the vacuum chamber 51 for decompression loading became 5X1 0-2 Torr. Then, the supply flow is formed to a certain high-purity nitrogen supply gas supply head 3 2 so as to flow out into the empty space 51 for loading, and the empty space 5 for loading is pressurized until it reaches atmospheric pressure. The relationship between the pressure in the empty space 51 for loading and the flow of gas is shown in Fig. 9 at this time. Next, the wafer W is taken out, and the number and size of particles attached to it are measured by a surface defect (defect) inspection device of the crystal garden. And the same test was carried out 3 times to obtain the average value of the measured value. Examples 2, 3, and 4 of Table 1, except that the lengths of the individual ceramic filter cylinders 4 and 5 are 5 Omm, 200 mm, and 30 Omm, the other conditions are the same as in Example 1. Carry out the test 3 times. However, for examples 2, 3, and 4, the size of this paper is applicable to the Chinese National Standard (CNS) Μ specification (210X297mm) _. (Please read the precautions before filling this page) Λ Order A7 B7 293136 V. Description of the invention (l5) Only the total number of particles (number setting) is measured. As Comparative Example 1, the test was carried out three times under the same conditions as in Example 1, except that the gas supply head 32 was not installed and the gas skull was directly introduced from the end of the introduction pipe 52. As Comparative Example 2, except for the use of a gold pendant exterminator red jade with a length of 100 mm and an average pore diameter of 3 μm, the others were tested three times under the same conditions as in Example 1. However, for Comparative Examples 1 and 2, only the total (total) number of measured particles is set. The experimental results of Examples 1 to 4 and Comparative Examples 1 and 2 are shown in Table 1 IIIIII π-set one (please read the notes on the back first # fill in this page) The standard scale of the paper is printed by the Staff Consumer Cooperative of the Central Bureau of Standards and Statistics Applicable to the Chinese National Standard (CNS) Α4 specifications (210X297 mm) _ 18 A7 B7 V. Description of the invention (16) Table 1 Example Comparative Example 1 2 3 4 1 2 The diameter of the particles (μ in) 0. 2 ~ 0.3 0. 7 — — — — 12.0 0 · 3 ~ 0. 5 0.3 — — — — 15.7 0. 5 ~ 2.0 — — — — — — 37. 8 Total 3. 0 8.0 2.5 2.0 2411.7 65.0 (Please read the notes on the back first Refill, '!,:? This page) Λ -5 Central Bureau of Standards of the Ministry of Economic Affairs 0 Printed by Beigong Consumer Cooperative. The paper standard is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) 19 Central Standard of the Ministry of Economic Affairs Printed 293136 by the Bureau ’s Consumer Cooperatives V. Description of the invention (l7) As an example 5, a gas hip supply head with an outer diameter of 19 mm and a length of 10 Omm ceramic filter cylinders 4 5 3 3 is equipped for loading Sui empty room 51 inside. That is, the outlet filter 40 of the cylinder 4 5 is formed into a multi-cut structure as shown in FIG. 3, and the average diameter of the pores of the filter layer 47 is 0.2 mm. Except for the supply flow to form a certain high purity nitrogen, other tests were conducted under the same conditions as in Example 1, and the number and size of the particles were measured with a wafer surface defect inspection device. The relationship between the pressure in the empty chamber 51 for loading and gas flow at this time will be shown in Fig. 10. And the same test was conducted 3 times to obtain the average value of the measured value. As examples 6, 7, and 8 in Table 2, except for making the length of individual ceramic interrupter cylinders 4 5 to 5 Omm, 2 0 Omm, and 3 Ο 0 mm, the others are the same as Example 5 Perform the test 3 times under the same conditions. However, for Examples 6, 7, and 8, only the total number of particles to be measured (number 1 :) ° As Comparative Example 3, except that the gas supply head 3 2 is not installed, directly from the end of the introduction tube 5 2 Except for the introduction of gas, the test was carried out three times under the same conditions as in Example 5. As Comparative Example 4, the test was carried out three times under the same conditions as in Example 5 except that a metal subductor made of metal with a length of 100 mm and an average pore diameter of 3 mm was used. However, for Comparative Examples 3 and 4, only the total count of the measured particles was set. The experimental results of Examples 5 to 8 and Comparative Examples 3 and 4 are shown in Table 2. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) _ (Please read the precautions on the back before filling in this page) Λ 、 \ 'a A7 B7 V. Description of the invention (is) Table 2 Examples of comparative examples 5 6 7 8 3 4 Particle diameter (μm) 0. 2 ~ 0.3 1.3 —— — — 15.0 0. 3 ~ 0.5 0.3 — — — — 18.0 0 · 5 ~ 3.7 — — — — 56.7 Total 5.3 12.0 5.3 2'7 696.7 99.7 (please read the notes on the back before filling in this page) Λ -Subscribe to the Ministry of Economic Affairs Central Consortium Bureau Staff Consumer Cooperative As an example of printing 9, a gas supply head 32 having a ceramic filter cylinder 4 5 having an outer diameter of 19 mm and a length of 100 mm is arranged in the empty chamber 51 for loading. That is, the outlet filter 40 of the cylinder 4 5 is formed as a multi-layer plum made as shown in circle 3, and the average pore diameter of the filter tube 4 7 is 0.25 mm. In addition to the supply of high-purity nitrogen, the flow of the board will increase in proportion to the time from the beginning to the middle of the supply, and the other is applicable to the Chinese standard (CNS) Λ4 specification (210X297mm) _ 21 _ A7 B7 293136 V. Description of the invention (19) Example 1 The test was carried out under the same conditions, and the number and size of Dong particles were measured with a crystal garden surface defect inspection device. At this time, the relationship between the pressure in the empty space 51 for loading and the gas flow rate is shown in circle 11◊ and the same test is performed three times to obtain the average value of the measured values. For example 10, 1 1, 1 2 in Table 3, except that the length of individual ceramic filter cylinders 4 5 is made to be 5 Omm, 2 O Omm, 3 0 0 mm, other The test was carried out three times under the same conditions as in Example 9. However, for Example 10, 1 1, 1 2, only the total number of particles (number>) is measured. As Comparative Example 5, except that the gas supply head 3 2 is not installed, directly from the end of the introduction tube 5 2 Except for the introduction of gas, the test was carried out three times under the same conditions as in Example 9. As Comparative Example 6, except for the use of a metal-cylinder-made filter cylinder with a length of 100 mm and an average pore diameter of 3 // m Except for Jane, the test was carried out three times under the same conditions as in Example 9. However, for Comparative Examples 5 and 6, only the total count of the measured particles was set. Set Examples 9 to 12 and Comparative Examples 5 and 6 The results of the experiment are shown in Table 3 ------.-- 乂 \ ------ book ---- one one f (please read the precautions on the back before filling this page) Employees of the Central Bureau of Standards of the Ministry of Economic Affairs The paper standard printed by the consumer cooperative is universal Chinese national standard (CNS) Λ4 specification (210X297mm) _ 22 A7 293136
7 B 五、發明説明（20 ) 表3 例 比較例 9 10 11 12 5 6 粒子 之直 徑（ μ in) 0 · 2〜 0.3 3.3 — — — — 13.7 0 · 3〜 0.5 1.3 — — — — 8.3 0 . 5〜 2.7 — — — — 63 _ 3 合計 7,3 9 . 3 6.7 07 556.3 85 . 3 (請先閱讀背而之注意事項再填{巧本頁) 經濟部中央標準局員工消費合作社印製 如表1至表3所示，當使用有關具備本發明之陶瓷製 過濾器缸简4 5之氣體供給用頭3 2之時，未具備過濾器 者不必硏时，即使與金屬製過濾器加以比較，亦顯明地可 令粒子之附著會顯著地予以減低。又過濾器缸简4 5之長 度愈長，粒子之附著數亦會愈減少。 圖1 2係隳示具備配設氣體供給用頭3 2之有關另一 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）-23 - 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（21 ) 實施例之裝載用眞空室的半導髗晶圓之蝕刻系統概略圖。 圖1 2所示之蝕刻系統係具備有處理室6 1，和晶圓 搬入及搬出用之2個預備室，亦即裝載用眞空室71。處 理室6 1係個別藉輸送室8 1而連接於裝載用眞空室7 1 。各室6 1、7 1、8 1之間，係藉閘閥8 2被連接成氣 密狀。 處理室6 1上部連接反應氣髖供給系統6 4，又在下 部連接排氣系統6 5，在處理室6 1內，配設有載置複數 之晶圖用之載置台及做爲下部電極來作用之感應器6 6， 及與下部電極相對向之上部電極6 7。感應器6 6係藉匹 配（藕合）電路6 8被連接於高頻電源6 9，上部髦極 6 7則被接地著。感應器6 6乃在晶圃W之蝕刻中，形成 可轉動。 裝載用眞空室71係具備令複數之晶圆W朝垂直方向 隔著問隔來收容用之架子7 2。架子7 2乃由升降機7 3 朝垂直方向被驅動。裝載用眞空室7 1上部之架子7 2上 方連接著供給氮氣等之惰性氣髏，或空氣等之氣髏之氣« 供給系統7 5，又在下部連接有排氣系統7 6。因此，裝 載用眞空室71形成可獨立地來調整內部壓力。裝載用眞 空室7 1之氣髗供給系統7 5乃成氣密地貫穿裝載用ft空 室71之外殻且具備有被連接於氣髗供給源之氣髖導入管 ，並在其前端予以連接氣饞供給用頭3 2。 输送室8 1內則配設输送晶圓W用之输送臂8 3。又 在输送室8 1亦予以連接氣髖供給系統及排氣系統。但輸 本紙張尺度適用中國國家標隼（CNS ) A4規格（210X297公釐了: ％ - (請先閱讀背面之注意事項再填"本f ) 訂 A7 B7 393136 五、發明説明（22 ) 送室8 1在通常之操作時，因不實施氣髗之供應，爲此，7 B 5. Description of the invention (20) Table 3 Examples of comparative examples 9 10 11 12 5 6 Particle diameter (μ in) 0 · 2 ~ 0.3 3.3 — — — — 13.7 0 · 3 ~ 0.5 1.3 — — — — 8.3 0 . 5 ~ 2.7 — — — — 63 _ 3 Total 7,3 9. 3 6.7 07 556.3 85. 3 (Please read the precautions before filling in {Qiao this page) Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs As shown in Tables 1 to 3, when using the gas supply head 3 2 provided with the ceramic filter cylinder 4 5 of the present invention, the person who does not have a filter does not need to use it, even if it is combined with a metal filter. In comparison, it is also obvious that the adhesion of particles can be significantly reduced. In addition, the longer the length of the filter cylinder, the smaller the number of particles will be. Figure 1 2 shows that there is a gas supply head 3 2 related to another paper standard applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) -23-A7 printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs B7 5. Description of the invention (21) The schematic diagram of the etching system of the semiconducting high-level wafer in the empty chamber for loading in the embodiment. The etching system shown in FIG. 12 is provided with a processing chamber 61 and two preparation chambers for wafer loading and unloading, that is, an empty chamber 71 for loading. The processing room 6 1 is connected to the empty space 7 1 for loading by the transfer room 8 1 individually. Between the chambers 6 1, 7 1, 8 1, the gate valve 8 2 is connected to be airtight. The upper part of the processing chamber 6 1 is connected to the reaction gas hip supply system 6 4, and the lower part is connected to the exhaust system 65. In the processing chamber 61, a mounting table for mounting a plurality of crystal patterns and a lower electrode are provided. The sensor 66 that acts, and the upper electrode 67 that faces the lower electrode. The inductor 6 6 is connected to the high-frequency power supply 6 9 by a matching (coupling) circuit 6 8, and the upper electrode 6 7 is grounded. The inductor 66 is formed to be rotatable in the etching of the crystal garden W. The empty chamber 71 for loading is provided with a shelf 72 for storing a plurality of wafers W in a vertical direction with intervening compartments. The shelf 72 is driven vertically by the elevator 7 3. The empty chamber 7 for loading 7 1 is connected to the upper shelf 7 2 with an inert gas skeleton supplying nitrogen gas, or a gas skeleton gas «supply system 7 5, and an exhaust system 76 is connected to the lower part. Therefore, the empty chamber 71 for loading is formed so that the internal pressure can be adjusted independently. The gas supply system 7 of the loading empty chamber 7 1 penetrates the outer shell of the loading ft empty chamber 71 airtightly and is provided with an air hip introduction tube connected to the supply source of the gas supply, and is connected at the front end thereof Head for discouragement supply 3 2. In the transfer chamber 81, a transfer arm 83 for transferring wafers W is provided. In addition, an air hip supply system and an exhaust system are also connected to the delivery chamber 81. However, the size of the input paper is in accordance with the Chinese National Standard Falcon (CNS) A4 specification (210X297 mm:%-(please read the precautions on the back and then fill in " this f). Order A7 B7 393136 V. Description of the invention (22) Send During the normal operation of the room 81, the supply of gas traps is not implemented. For this reason,
V 有關本發明之氣艚供給用頭3 2並不予以配設。 (請先閱讀背而之注意事項再填寫本頁) 如上述，本實施例與圖1及圖8所示之裝載用眞空室 2 1、5 1有所不同，圖1 2所示之蝕刻系統之裝載用眞 空室7 1係1次可收容複數之晶圃W者。有關本發明之氣 體供給用頭3 2 ，甚至在如此之裝載用眞空室7 1中，亦 可賦予與對於1次收容1片晶園W之裝載用眞空室21、 5 1同樣之有利處。 再者，在氣镰供給用頭之將成爲氣髏流出口的多孔質 陶瓷板，並非僅限於園筒形，可採用各種之形態。 例如圖1 3所示之氣體供給用頭9 0係具備形成爲矩 形之箱子形之出口過瀘器91。更具髏地說明時，出口過 濾器91乃使圓3所示之形成多層構造之一對多孔質陶瓷 板9 2，隔著間隔且藉密封材料9 3來加以接合，以形成 氣體傭存器。在此，兩陶瓷板9 2係與晶園W配置成平行 ，且對於上側陶瓷板9 2和裝載用眞空室2 1之頂板之間 ，將予以形成具有充分之間隙。 經濟部中央標準局貝工消費合作社印製 又圖1 4所示之氣體供給用頭9 5之出口過濾器9 6 ，將構成裝載用眞空室2 1頂板內面之概略整體，而是由 圖3所示之形成多層構造之多孔質陶瓷板9 7所形成。並 在陶瓷板9 7背面側予以配設形成爲氣髏儲存器之附屬室 9 8 。 此外，亦可使用令圖2所示之過濂器缸简4 5之上半 部分成爲平坦之半圓简形之出口過濾器。無論那一種場合 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）_ 25 經濟部中央標準局員Μ消費合作社印製 A7 B7 五、發明説明（23 ) ，在相對向於晶園W之部分，出口過濾器形成與晶_冒之 被處理面成平行，而且從胲出口過濾器所流出之氣體使之 形成屠流狀態而對於晶園^之被處理面概略朝向成直角方 向流動。 〔圚式之簡單說明〕 圚1係顯示使用有關本發明之一實施例的裝載用眞空 室之半導«I晶園之蝕刻系統概略圖。 圖2係放大圚1所示之氣體供給用頭來顯示之部份缺 口圚〇 圖3係放大構成圖1所示之氣體供給用頭之出口過濾 器之多孔質板來顛示之剖面圖。 圖4久及圓4 B係個別顯示圊1所示之氣體供給用頭 之在裝載用ft空室內之配置形態的概略斜視圖，及與晶園 之位置關係的平面圚。 圖5係顯示圚1所示之氣II供給用頭在裝載用眞空室 之效果之曲線圖。 圖6係顯示圖1所示之氣體供給用頭之設置場所和效 果之關係的曲線圓。 圖7係顯示在表示結果於圖6中之資驗時之氣饈供給 用頭之設置場所的圖。 圖8係顯示有關本發明之其他實施例之裝載用眞空室 的圓。 圆9係顯示使用圖8所示之裝載用眞空室所進行之實 本紙張尺度適用中國國家標準（〇阳）八4規格（2丨0\297公釐）_9^_ (請先閱讀背而之注意事項再填"本頁)V The air cock supply head 32 according to the present invention is not provided. (Please read the precautions before filling in this page) As mentioned above, this embodiment is different from the empty chambers 2 1, 5 1 for loading shown in Figures 1 and 8, the etching system shown in Figure 12 The empty chamber 7 for loading is a series that can accommodate multiple crystal gardens W at a time. The gas supply head 3 2 of the present invention can be provided with the same advantages as the loading empty chambers 21, 51 for accommodating one wafer W at a time even in such empty loading chamber 71. In addition, the porous ceramic plate that will serve as the outlet of the gas skeleton at the supply head of the gas sickle is not limited to the cylindrical shape, and can take various forms. For example, the gas supply head 90 shown in Fig. 13 is provided with an outlet filter 91 formed in a rectangular box shape. More specifically, the outlet filter 91 is a pair of porous ceramic plates 92 formed in a multi-layered structure as shown in circle 3, and is joined with a sealing material 9 3 at intervals to form a gas reservoir . Here, the two ceramic plates 92 are arranged parallel to the crystal garden W, and a sufficient gap is formed between the upper ceramic plate 92 and the top plate of the empty space 21 for loading. The outlet filter 9 6 of the gas supply head 9 5 as shown in FIG. 14 printed by the Beigong Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs will form the overall outline of the inner surface of the ceiling of the empty space 2 1 for loading. 3 is formed by a porous ceramic plate 97 formed with a multilayer structure. And on the back side of the ceramic plate 9 7, an auxiliary chamber 9 8 formed as a gas skull storage is arranged. In addition, an outlet filter that makes the upper half of the ballast cylinder 4 shown in FIG. 2 into a flat semicircular shape can also be used. Regardless of the occasion, the paper standard is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) _ 25 Printed A7 B7 by the Consumer Standardization Bureau of the Central Standards Bureau of the Ministry of Economic Affairs. 5. Description of the invention (23). For the part, the outlet filter is formed to be parallel to the surface to be treated by the crystal, and the gas flowing from the outlet filter of the girdle is formed into a slaughtered state, and the surface to be treated of the crystal is roughly flowing at a right angle. [Brief description of the formula] 圚 1 is a schematic diagram showing the etching system of a semiconducting «I crystal garden using a loadable empty chamber according to an embodiment of the present invention. Fig. 2 is an enlarged sectional view showing a part of the opening of the gas supply head shown in Fig. 1; Fig. 3 is an enlarged cross-sectional view showing the porous plate constituting the outlet filter of the gas supply head shown in Fig. 1; Fig. 4 Kuji and Circle 4 B are schematic perspective views showing the arrangement of the gas supply head shown in cell 1 in the ft empty chamber for loading, and the plane relationship with the positional relationship with the crystal garden. Fig. 5 is a graph showing the effect of the gas II supply head shown in 圚 1 in the empty chamber for loading. Fig. 6 is a curve circle showing the relationship between the installation location of the gas supply head shown in Fig. 1 and the effect. Fig. 7 is a diagram showing the installation location of the head for supplying the gastronomy when the result shown in the qualification in Fig. 6 is shown. Fig. 8 shows a circle of a hollow chamber for loading according to another embodiment of the present invention. Circle 9 shows that the actual paper size using the empty chamber for loading shown in Figure 8 is applicable to the Chinese National Standard (〇yang) 84 specifications (2 丨 0 \ 297mm) _9 ^ _ (please read the back first (Please fill in " this page)
A7 B7 293136 五、發明説明（24 ) 驗時之裝載用ft空室內之壓力和氣饉流量之關係的曲線圖 〇 圓1 0係顯示使用圚8所示之裝載用眞空室來進行之 另外實驗時之裝載用眞空室內之壓力和氣髗流量之關係的 曲線圖。 圓11係顯示使用圖8所示之裝載用眞空室來進行之 再另一實驗時之裝載用眞空室內之壓力和氣髏流置之關係 的曲線圖。 圖1 2係顯示使用有關本發明之其他實施例之裝載用 眞空室之半導髓晶園之蝕刻系統概略圖。 圖1 3係顯示有關本發明之再另一實施例之裝載用眞 空室之概略斜視圖。 圖1 4係顯示有關本發明之再另一實施例之裝載用眞 空室之概略斜視圖。 (請先閲讀背面之注意事項再填¾本頁) 訂 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇Χ25»7公釐） -27 -A7 B7 293136 V. Description of the invention (24) The graph of the relationship between the pressure and gas flow in the ft empty chamber for loading at the time of inspection. Circle 1 0 shows another experiment conducted using the empty chamber for loading shown in 圚 8. The curve of the relationship between the pressure in the empty chamber and the gas flow is used. Circle 11 is a graph showing the relationship between the pressure in the empty chamber for loading and the flow of the gas skeleton during another experiment using the empty chamber for loading shown in FIG. 8. Fig. 12 is a schematic diagram showing an etching system of a semiconducting medullary crystal garden using a plenum chamber for loading according to other embodiments of the present invention. Fig. 13 is a schematic perspective view showing a plenum chamber for loading according to still another embodiment of the present invention. Fig. 14 is a schematic perspective view showing an empty chamber for loading according to still another embodiment of the present invention. (Please read the precautions on the back before filling ¾ this page) Order Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs This paper standard applies to the Chinese National Standard (CNS) A4 specification (21〇Χ25 »7mm) -27-