TW293135B - Process of fabricating field emission display spacer - Google Patents

Process of fabricating field emission display spacer Download PDF

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TW293135B
TW293135B TW84112592A TW84112592A TW293135B TW 293135 B TW293135 B TW 293135B TW 84112592 A TW84112592 A TW 84112592A TW 84112592 A TW84112592 A TW 84112592A TW 293135 B TW293135 B TW 293135B
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Taiwan
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fed
layer
sand
wall support
sandblasting
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TW84112592A
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Chinese (zh)
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Jaw-Ji Perng
Jin-Yuh Lu
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Ind Tech Res Inst
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Abstract

A process of fabricating field emission display (FED) spacer, especially by sandblasting method as a means, comprises of the following steps: (1) first on FED baseplate (including substrate, micro cathodes, conductive material layer, insulator layer and gate etc.) implanting one photosensitive sandblast-proof layer, then using photolithography method, by exposure-development method etching sandblast-proof in diameter with about 50~200 (muon)m, forming needed sandblast-proof pattern called first sandblast-proof layer; (2) on FED baseplate and first sandblast-proof layer implanting one FED space material; (3) on FED spacer material implanting another photosensitive sandblast-proof layer, then using photolithography method, by exposure-development method etching sandblast-proof in diameter with about 50~200 (muon)m, forming needed sandblast-proof pattern called second sandblast-proof layer; (4) using sandblast method, removing outer FED space material below second sandblast-proof layer, leaving FED spacer material below second sandblast-proof layer; (5) performing baking to baseplate, FED spacer and sandblast-proof in order to burn sandblast-proof layer and cure, harden FED spacer; (6) therefore finishing FED space implementation.

Description

293135 A7 B7 ίΐ|~· 經濟部中央標準局員工消費合作社印製 五、發明説明() (一) 發明技術領域: 本發明揭露了一種製造場放射顯示器(Field Emission Display ; FED)壁支(Spacer)之方法,尤指一種利用噴砂 (Sandblasting)方式來製造之。 (二) 發明背學: 按,FED被用在目前電視、電腦等螢幕之顯示,其工作手段 是利用一種場放射電子打到表面覆蓋有螢光粉的螢幕上,具有高 能量之電子束將會使螢光粉釋放出光子,經由螢幕的顯示而到達 觀測者,(請參考圖一所示),圖中黑色三角形是一種微陰極, 可發射電子束(圖中以虛線表示電子束),打到表面平板之內壁上 (即,覆蓋有螢光粉的螢幕上),在此場放射顯示過程中,FED管 內是抽眞空的,一般壓力小於1〇·6托爾(t〇rr),故FED管內必須克 月艮來自管外之大氣壓力的壓迫,因此,必須在管內兩壁(基礎底板 壁和表面平板壁)之間製造出許多壁支(圖一中兩塊板中間之支柱 表示壁支),用來抵抗管內受管外大氣壓之壓迫,但FED壁支之形 成又不能影響到電子束發射到螢光粉上之路程,以避免影響到螢 幕之解析度,因此,爲了保持螢幕高影像解析度,壁支之製作技 術是重要的,必須要求壁支體形細和重量輕,並且利用其壁支在 單位面積上之數量多,使得體形細及重量輕之壁支有足夠的力量 去克服管外大氣壓壓力之壓迫。 有鑑於FED壁支之重要性,各種形式的FED壁支被開發出 來,例如美國專利Meyer等人(專利編號4,183,125)以編織細絲 狀方法來製造FED之壁支,請參考圖二;另外,Lowrey等人(專 利編號5,205,770 )利用微鉅子(micro-saw)切割底板,再將壁支材 料塡入底板切割掉之部份,來製造FED壁支之方法,其壁支高度 約爲200微米,請參考圖三;除此,Cathey等人(專利編號 5,232,549 )則利用高能量束(例如鐳射光束伋光罩來蝕刻掉非壁 支部份,留下壁支部份等方式來製造FED壁支,其壁支高度約爲 200至1000微米(em),請參考圖四;雖然,目前這幾種方式均可 製造出FED壁支,但均有其缺點,說明如下:(l)Meyer等人,製 造壁支過程太過複雜、費時且編織因難;(2)Lowrey^人,以微鉅 子(microsaw)切割底板是項繁雜的工作,因爲壁支體形非常細 (其寬度大約25至30微米)且數目非常多侮平方公分面積上$壁 支約有數千支左右),故須耗費大量工時;(3)Cathey等人,以高能 量束(例如鐳射光束)來製造壁支,由於鍾射光束能量高用在打掉 本紙張尺度適用中國國家標率(CNS ) A4規格(210X297公釐) --'--Ll·--L· -裝------訂------人银 (請先閲讀背面之注意事項再填寫本頁) A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明() 非壁支部份時,很容易傷及基底板上其它元件部份,並且所須費 用極高,其可行性不佳;由於以上傳統之各種製造fed壁支技 術,在實行上均有其困難性、繁雜性以及製作成本高而失去商品 競爭時所要求低成本、簡易性等優勢。 本發明揭露了一種新的方式來製造FED壁支之方法,特別是 指以一種噴砂方式製造之,用此噴砂方式製造FED壁支,可以使 得製造工程大爲減化,製造成本降低,並且所製造FED壁支之高 度可遠大於傳統所製造的壁支高度,此將有利螢光粉發光效率, 故以噴砂方式製造FED壁支之方法,可以解決習用製造FED壁支 技術之缺點,有利增加商品競爭時所要求的製作成本低、製作簡 易性及商品較優性等優勢。 (三)發明的簡單說明: 有鑑於上述習用製造場放射顯示(FED ; Field Emission Display)器壁支技術之缺點,本發明乃提出一種新的噴砂方式來製 造FED壁支,其製造方法非常簡易,關鍵步驟就只有簡單的噴砂 蝕刻部份,因此,用此噴砂方式可以大幅降低製造FED壁支之複 雜度及製作成本。 本發明之主要目的在於尋求改進FED壁支之製造方法,特別 是使用一種噴砂方式來製造,本發明第一個實施例說明如下:首 先,在基礎平板(baseplate)上(基礎平板包括有:陽極閘(gate)、絕 緣層、電導材料層(conductive material layer)、微陰極(microcathodes) 及基板 (substrate) 等元件) 佈上一感光性砂阻層’稱之爲第 一砂阻層,厚度約30〜5〇微米(// m),再以光蝕刻 (photolithography)的方法在感光性砂阻層上蝕刻掉直徑約50〜200 之砂阻,使得基礎平板上之部分陽極閘露出;然後使用篩網 印花方法(screen-printing method)將FED壁支(spacer)材料佈在基礎 底板及第一砂阻(firstsandblast-proof)層上,之後,再利用另一感 光性砂阻層,稱之爲第二砂阻層(second sandblast-proof),佈在 FED壁支(Spacer)材料上,然後以光蝕刻法將第二砂阻層蝕刻掉剩 下直徑約5〇〜200# m之砂阻,其位置正好對齊第一砂阻層部份蝕 刻掉的位置,再下來,使用噴砂方法去掉第一砂阻層以下之外的 壁支材料,然後拿掉第一及第二砂阻層,並且將基礎底板及壁支 進行烘烤,用以硬化壁支,此即完成第一個實施例FED壁支之製 作;本發明的第二個實施例則是在FED表面平板上製作其壁支, 說明如下:首先,在表面平板(表面平板是一玻璃材質,其內壁 塗佈有聚乙烯醇(PVA ; Poly Vinyl Alcohol)和螢光粉之混合物)上 本紙張尺度適用中國國家橾準(CNS ) A4規格(210X297公釐) kl·--k-裝------訂--r---▲線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印裝 393135 A7 B7 五、發明説明() 佈上一層感光性砂阻,稱爲第一砂阻層,再以光蝕刻方式蝕刻掉 部份(直徑約5〇〜200^111)之砂阻,露出部份PVA和營光粉之混 合物,然後再以噴砂法將露出之PVA和螢光粉混合去掉,而露出 部份玻璃材質之表面平板,之後,以篩網印花方法塗佈一層FED 壁支材料在表面平板及第一砂阻層上,之後,在FED壁支材料上 再佈上另一層感光性砂阻層,稱之爲第二砂阻層,再以光蝕刻方 法,蝕刻掉剩下直徑約50〜200//m之砂阻,其位置正好對齊第一 砂阻層部份蝕刻掉的位置,接下來,再以噴砂法去掉第二砂阻層 之下以外的壁支材料,然後將表面平板、壁支、砂阻及PVA和螢 光粉之混合物進行烘烤,除了可使壁支硬化外且可燒掉第一、第 二砂阻層及PVA材料,此即完成第二個實施例FED壁支的製作。 本發明之另一目的在於尋求增高FED壁支高度之方法,使用 噴砂方式,可製造之FED壁支高度,大於傳統技術所製造之壁支 高度,壁支高度愈高,則當固定基礎底板上的電流時,可以使得 表面平板上之電壓加得愈高,如此,會使得覆蓋在表面平板內壁 上之螢光粉發光效率愈好。 (四) 圖示的簡要說明: 圖1爲習用技術第一個實施例之陰極射線管內部結構橫截面示意 圖。 圖2爲習用技術第二個實施例,以編織細絲狀製造FED壁支之立体 示意圖。 圖3A至3F爲習用技術第三個實施例,以使用微鉅子(micro-saw)切 割底板來製造FED壁支之方法示意圖。 圖4A至4C爲習用技術第四個實施例,以使用高能量束來製造FED 壁支之方法示意圖。 圖5A至5G爲本發明的第一個實施例,以使用噴砂方式來製造FED 壁支之方法步驟示意圖。 圖6A至6F爲本發明的第二個實施例,以使用噴砂方式來製造FED壁 支之方法步驟示意圖。 . (五) 發明的詳細說明:293135 A7 B7 ίΐ | ~ · Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of the Invention (1) Technical Field of the Invention: The present invention discloses a field emission display (Field Emission Display; FED) wall support (Spacer) ) Method, especially a method using sand blasting (Sandblasting) to manufacture it. (2) Back to the invention: Press, FED is used in the display of current TVs, computers and other screens. Its working method is to use a field of emitted electrons to hit the screen covered with phosphor powder. The electron beam with high energy will The phosphor will release photons and reach the observer through the display on the screen (please refer to Figure 1). The black triangle in the figure is a micro-cathode that can emit electron beams (the dotted line indicates the electron beam), Hit the inner wall of the surface plate (ie, the screen covered with phosphor), during the field emission display, the FED tube is emptied, and the general pressure is less than 10 · 6 Torr (t〇rr ), So the FED tube must be compressed by atmospheric pressure from outside the tube. Therefore, many wall supports must be made between the two walls in the tube (the base bottom wall and the surface flat wall) (two plates in Figure 1) The pillar in the middle represents the wall support), which is used to resist the pressure in the tube from the atmospheric pressure outside the tube, but the formation of the FED wall support cannot affect the distance of the electron beam emitted onto the phosphor to avoid affecting the resolution of the screen. Therefore, in order to keep the screen high Like resolution, the manufacturing technique of wall supports is important. The wall supports must be thin and light, and the number of wall supports per unit area is large, so that the thin and light wall supports have enough power to go. Overcome the pressure of atmospheric pressure outside the tube. In view of the importance of FED wall supports, various forms of FED wall supports have been developed. For example, US Patent Meyer et al. (Patent No. 4,183,125) use Filament-like methods to manufacture FED wall supports. Please refer to Figure 2; Lowrey et al. (Patent No. 5,205,770) use micro-saw to cut the base plate, and then insert the wall support material into the cut part of the base plate to manufacture the FED wall support. The height of the wall support is about 200 microns. Please refer to Figure 3. In addition, Cathey et al. (Patent No. 5,232,549) use high-energy beams (such as laser beam absorbing mask to etch away the non-wall branch parts, leaving the wall branch parts to manufacture FED wall branches. The height of the wall support is about 200 to 1000 microns (em), please refer to Figure 4; although, FED wall supports can be manufactured by these methods at present, but they all have their shortcomings, as described below: (l) Meyer et al., Manufacturing The wall support process is too complicated, time-consuming and difficult to weave; (2) Lowrey, people, cutting the bottom plate with microsaw is a complicated task because the wall support is very thin (its width is about 25 to 30 microns) and The number is a lot of square centimeters On the area, there are about thousands of wall supports), so it takes a lot of man-hours; (3) Cathey et al. Use high-energy beams (such as laser beams) to manufacture wall supports, because the energy of the clock beam is high. The standard of this paper is applicable to China National Standard Rate (CNS) A4 (210X297mm) --'-- Ll · --L · -installation ------ order ------ renyin (please first Read the precautions on the back and then fill out this page) A7 B7 Printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Invention Description () When the non-wall support part, it is easy to damage other component parts on the substrate board, and the cost It is extremely high, and its feasibility is not good; due to the above traditional various manufacturing wall wall support technologies, all of them have difficulties, complexity and high production costs in implementation, so they lose the advantages of low cost and simplicity required for commodity competition. The present invention discloses a new method for manufacturing FED wall supports, in particular, it is manufactured by a sandblasting method. Using this sandblasting method to manufacture FED wall supports can greatly reduce the manufacturing process and reduce the manufacturing cost. The height of manufacturing FED wall supports can be much greater than the height of traditionally manufactured wall supports, which will be beneficial to the luminous efficiency of phosphors. Therefore, the method of manufacturing FED wall supports by sand blasting can solve the shortcomings of conventional FED wall support manufacturing techniques, which is beneficial to increase The advantages of low production cost, ease of production, and superior product quality required for commodity competition. (3) Brief description of the invention: In view of the shortcomings of the conventional manufacturing field emission display (FED; Field Emission Display) wall support technology, the present invention proposes a new sandblasting method to manufacture the FED wall support, and its manufacturing method is very simple The key step is only a simple sand blasting and etching part. Therefore, this sand blasting method can greatly reduce the complexity and manufacturing cost of manufacturing FED wall supports. The main purpose of the present invention is to seek to improve the manufacturing method of FED wall support, especially by using a sandblasting method. The first embodiment of the present invention is described as follows: First, on the base plate (the base plate includes: anode The gate, insulating layer, conductive material layer, microcathodes, substrate and other components are covered with a photosensitive sand resistance layer, called the first sand resistance layer, with a thickness of about 30 ~ 50 microns (// m), then use photolithography to etch away the sand resistance of about 50 ~ 200 on the photosensitive sand resistance layer, so that part of the anode gate on the base plate is exposed; then use In the screen-printing method, the FED spacer material is laid on the base plate and the first sand and blast-proof layer. After that, another photosensitive sand resistance layer is used, which is called Second sandblast-proof (second sandblast-proof), distributed on the FED wall support (Spacer) material, and then the second sand-resistance layer is etched away by photoetching, leaving a sand resistance of about 50 ~ 200 # m in diameter, Its position is just aligned with the first sand The position where the resist layer is etched away, then come down, use the sandblasting method to remove the wall support material other than below the first sand resist layer, then remove the first and second sand resist layers, and bake the base plate and the wall support Baking, to harden the wall support, this completes the production of the FED wall support in the first embodiment; the second embodiment of the present invention is to make the wall support on the FED surface plate, as follows: First, on the surface plate (The surface plate is a glass material, the inner wall of which is coated with a mixture of polyvinyl alcohol (PVA; Poly Vinyl Alcohol) and phosphor powder). The paper size is applicable to China National Standard (CNS) A4 (210X297mm) kl ---- k-install ------ order--r --- ▲ line (please read the precautions on the back before filling in this page) Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 393135 A7 B7 V. Description of the invention () Put a layer of photosensitive sand resistance, called the first sand resistance layer, and then etch away part of the sand resistance (diameter about 50 ~ 200 ^ 111) by photo etching, exposing part of PVA and Yingguang Powder mixture, and then remove the exposed PVA and fluorescent powder by sandblasting method, A part of the glass surface plate is exposed, then, a layer of FED wall support material is coated on the surface plate and the first sand resistance layer by screen printing method, and then another layer of photosensitive sand is spread on the FED wall support material The resist layer is called the second sand resist layer, and then the photoresist method is used to etch away the remaining sand resist with a diameter of about 50 ~ 200 // m, and its position is exactly aligned with the part where the first sand resist layer is etched away. Next, remove the wall support material under the second sand barrier layer by sand blasting method, and then bake the surface plate, wall support, sand resistance and the mixture of PVA and phosphor powder, in addition to hardening the wall support Moreover, the first and second sand resistance layers and the PVA material can be burned, and the manufacturing of the FED wall support of the second embodiment is completed. Another object of the present invention is to find a method to increase the height of the FED wall support. The height of the FED wall support that can be manufactured using sand blasting is greater than the height of the wall support manufactured by traditional technology. Current, the higher the voltage on the surface plate, the better the luminous efficiency of the phosphor covering the inner wall of the surface plate. (4) Brief description of the drawings: Fig. 1 is a schematic cross-sectional view of the internal structure of a cathode ray tube according to the first embodiment of conventional technology. Fig. 2 is a perspective view of a second embodiment of a conventional technique for manufacturing FED wall supports in the form of braided filaments. 3A to 3F are schematic diagrams of a third embodiment of a conventional technology, which uses a micro-saw to cut a base plate to manufacture a FED wall branch. 4A to 4C are schematic diagrams of a fourth embodiment of a conventional technique for manufacturing a FED wall branch using a high-energy beam. 5A to 5G are schematic diagrams of the first embodiment of the present invention, which uses sandblasting to manufacture FED wall supports. 6A to 6F are schematic diagrams of the second embodiment of the present invention, a method for manufacturing FED wall supports by using sandblasting. (5) Detailed description of the invention:

請參閱圖5所示,係爲本發明之使用噴砂方式(Sandblasting Method)來製造場發射顯示(Field Emission Display ; FED)器壁支 (Spacer)之第一個實施例之步驟方法,其製造過程所須之元件,包 括有:陽極閘(gate) 1、絕緣層2、導電材質層(conductive material layer) 3、基板(substrate) 4、微陰極(micro cathodes) 5, 第一砂阻層(first sandblast-proof) 6、場放射顯示器壁支(FED 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) n· I I mu --eJ1^1 HJ n HI (請先閱讀背面之注意事項再填寫本頁) A7 B7 經濟部中央標準局tec工消費合作社印製 五、發明説明() spacer)材料 7、第二砂阻層(second sandblast-proof) 8、FED壁支 9、螢光粉10、電壓源11、單一像素(picture element)12、及基礎 平板(baseplate^及表面平板(surface plate)14等元件;首先說明如 圖5⑻所示,此爲一FED基礎平板(baSeplate)13,包括有:陽極閘 (gate) 1、絕緣層 2、導電材質層(conductive material layer) 3、基 板(substrate) 4及微陰極(micro cathodes) 5等元件;請參考圖5 Φ),首先在FED基礎平板I3上,佈上一感光性砂阻層,再利用光 蝕刻(photolithography)方法,以曝光顯影方式蝕刻掉直徑約50〜 2〇〇微米(#m)之砂阻,來製成所須之砂阻圖案,稱之爲第一砂阻 (fkstsandblast-proof)層6,然後,利用篩網印花方法(screen-printing method)將其FED壁支材料7佈在FED基礎平板13¾^—砂 阻層6上,其FED壁支材料之厚度若由陽極閘1算起,大約爲200 微米至2000微米左右(此厚度即爲FED壁支高度),請參考圖5 (c) 所示;請參考圖5 (d),再將另一感光性砂阻層佈在FED壁支材料 7上,利用光蝕刻方法,以曝光顯影方式蝕刻掉剩下直徑約50〜 2〇〇微米(//m)之砂阻圖案,稱之爲第二砂阻層8,其位置正好對 齊第一砂阻層部份蝕亥!J掉的位置;接下來,利用噴砂(sandblasting) 方式,去掉第二砂阻層8以下之外的壁支材料7,請參考圖5⑻ 所示,因此,在第二砂阻層8以下即形成了FED壁支9 ;請參考 圖5①,去掉第一砂阻層6和第二砂阻層8,留下FED壁支9, 然後將其基礎平板13及成型之FED壁支9進行烘烤,以凝固、硬 化FED壁支9 ;請參考圖5(g),利用噴砂法製造FED壁支9 ,其 最高高度,大於傳統方法製造FED壁支之高度(約200至1000微米 左右),當固定基礎平板13上之電流時,若FED壁支9愈高時, 則表面平板上之電壓可加得愈高,如此可讓螢光粉發光效率愈 好,而使得螢幕上的亮度愈亮,因此,可以增加螢幕之高影像解 析度等效果,由以上圖5之各步驟,始完成一種製程簡易且具備 提高螢幕之影像解析度之FED壁支製程方法。 請參閱圖6所示,係爲本發明之使用噴砂方式來製造FED壁 支的第二個實施例之步驟方法,其製造過程所須之元件,包括 有:表面平板14 (爲玻璃材質)、聚乙烯醇(PVA ; Poly Vinyl Alcohol)和螢光粉混合物15、第一砂阻層6、FED壁支材料γ、第 二砂阻層8、FED壁支9、螢光粉1〇及噴砂17等元件;首先,請 參考圖6 (a)所示,此爲一FED表面平板14,其上佈有一層含有 PVA和螢光粉之混合物15 ;請參考圖6(b),在PVA和螢光粉混合 物15上佈上一層感光性砂阻,利用光蝕刻(photolithography)方 本紙乐尺度逋用中國國家標準(CNS ) A4C格(210X297公釐) '~ -----W----^ -裝------訂--j---入银 (請先閱讀背面之注意事項再填寫本頁) A7 __________B7 五、發明説明() 法,以曝光顯影等方式蝕刻掉部份(直徑約5〇〜200 ^m)之砂 阻,來製程所須之砂阻圖案,此砂阻層稱之爲第一砂阻層6,而 露出部份PVA和螢光粉混合物;請參考圖6(c),再利用噴砂17方 式去掉不被第一砂阻層6所覆蓋的PVA和螢光粉之混合物15,露 出部份玻璃材質之表面平板14 ;請參考圖6(d),然後以篩網印花 法佈上一層FED壁支材料7,其厚度約爲2〇〇〜2000" m左右,之 後’在FED壁支材料7上,再佈上另一層感光性砂阻層,同樣利 用光蝕刻方法,以曝光顯影等方式鈾刻掉剩下直徑約50〜200//m 之砂阻,稱之爲第二砂阻層8,其圖案如圖所示,其位置正好對 g第一砂阻層6部份蝕刻掉的位置;接下來,請參考圖6(e)所 示’再利用噴砂Π方式去掉第二砂阻層8之下以外的壁支材料 7,以形成FED壁支9 ;請參考圖6 (f)所示,最後,將表面平板 14、第一砂阻層6、第二砂阻層8、壁支9及含有PVA和螢光粉 15之混合物進行高溫烘烤(其烘烤溫度爲450°C至650°C左右),除 了可使壁支硬化外,並且可燒掉砂阻層8及PVA和螢光粉之混合 物中的PVA(剩下營光粉10);由以上圖6之各步驟始完成另一種 製程簡易且具備提髙螢幕之影像解度之FED壁支製程方法。 --------------1--k-裝------訂--.----{涨 . (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐)Please refer to FIG. 5, which is the step method of the first embodiment of the present invention using Sandblasting Method to manufacture Field Emission Display (FED) wall support (Spacer), and its manufacturing process The necessary components include: anode gate (gate) 1, insulating layer 2, conductive material layer (conductive material layer) 3, substrate (substrate) 4, micro cathode (micro cathodes) 5, first sand resistance layer (first sandblast-proof) 6. Field emission display wall support (FED This paper scale is applicable to China National Standard (CNS) A4 specification (210X297mm) n · II mu --eJ1 ^ 1 HJ n HI (please read the notes on the back first (Fill in this page again) A7 B7 Printed by the tec industrial and consumer cooperative of the Central Bureau of Standards of the Ministry of Economy V. Description of invention () spacer) Material 7, second sandblast-proof 8, FED wall support 9, phosphor powder 10. The voltage source 11, a single pixel (picture element) 12, and a base plate (baseplate ^ and surface plate) 14 and other components; first, as shown in FIG. 5⑻, this is a FED base plate (baSeplate) 13, Including: anode gate (gate) 1, insulation 2. Conductive material layer 3. Substrate 4 and micro cathodes 5; please refer to FIG. 5 (Φ). First, apply a photosensitive sand resistance on the FED base plate I3 Layer, and then use photolithography to etch away the sand resistance of about 50 ~ 200 microns (#m) in diameter by exposure and development to make the required sand resistance pattern, called the first sand resistance (fkstsandblast-proof) layer 6, then use screen-printing method (screen-printing method) to distribute its FED wall support material 7 on the FED foundation plate 13¾ ^ -sand resistance layer 6, the thickness of the FED wall support material if From the anode gate 1, it is about 200 microns to 2000 microns (this thickness is the height of the FED wall support), please refer to Figure 5 (c); please refer to Figure 5 (d), and then another sensitivity The sand resistance layer is distributed on the FED wall support material 7, and the remaining sand resistance pattern with a diameter of about 50 ~ 200 micrometers (// m) is etched away by exposure and development using a photo-etching method, which is called the second sand resistance Layer 8, the position of which is exactly aligned with the position where the first sand barrier layer erodes the sea! J dropped; Next, use sandblasting ) Method, remove the wall support material 7 other than the second sand barrier layer 8, please refer to Figure 5 ⑻ shown, therefore, the FED wall support 9 is formed below the second sand barrier layer 8; please refer to Figure 5 ①, remove The first sand barrier layer 6 and the second sand barrier layer 8, leaving the FED wall support 9, and then baking the base plate 13 and the formed FED wall support 9 to solidify and harden the FED wall support 9; please refer to the figure 5 (g), the FED wall branch is manufactured by sandblasting. The highest height is greater than the height of the traditional method of manufacturing the FED wall branch (about 200 to 1000 microns). When the current on the base plate 13 is fixed, if the FED wall branch The higher the 9 is, the higher the voltage on the surface plate can be increased, which can make the luminous efficiency of the phosphor better and the brightness on the screen brighter. Therefore, the effect of high image resolution on the screen can be increased. From the above steps in FIG. 5, a method of FED wall support process with simple process and improved screen image resolution is completed. Please refer to FIG. 6, which is a step method of the second embodiment of the invention for manufacturing FED wall supports using sandblasting. The components required for the manufacturing process include: a surface plate 14 (made of glass material), Polyvinyl alcohol (PVA; Poly Vinyl Alcohol) and phosphor mixture 15, first sand barrier layer 6, FED wall support material γ, second sand barrier layer 8, FED wall support 9, phosphor powder 10 and sandblasting 17 And other components; first of all, please refer to FIG. 6 (a), this is a FED surface plate 14, which is covered with a layer 15 containing a mixture of PVA and phosphor powder; please refer to FIG. 6 (b), PVA and fluorescent A layer of photosensitive sand is applied to the light powder mixture 15, and the photo-etching (photolithography) square paper paper is used in accordance with the Chinese National Standard (CNS) A4C grid (210X297mm). '~ ----- W ---- ^ -Installed ------ ordered--j --- into the silver (please read the notes on the back before filling in this page) A7 __________B7 5. Invention description () method, etch away parts by exposure and development (Sand resistance of about 50 ~ 200 ^ m in diameter), the sand resistance pattern required for the process, this sand resistance layer is called the first sand resistance layer 6, and part of the PVA and fluorescent are exposed Light powder mixture; please refer to Figure 6 (c), and then use sandblasting 17 to remove the mixture 15 of PVA and phosphor powder that is not covered by the first sand barrier layer 6, exposing part of the glass surface plate 14; please refer to Figure 6 (d), then apply a layer of FED wall support material 7 with a screen printing method, the thickness of which is about 200 ~ 2000 " m, and then on the FED wall support material 7, another cloth is applied The sand barrier layer is also etched by uranium using photolithography, exposure and development, etc. The remaining sand barrier with a diameter of about 50 ~ 200 // m is called the second sand barrier layer 8, and its pattern is shown in the figure. Its position is exactly the position where the first sand resistance layer 6 is partially etched away; Next, please refer to FIG. 6 (e) 'and then use the sandblasting II method to remove the wall support material except under the second sand resistance layer 8 7, to form the FED wall support 9; please refer to FIG. 6 (f), and finally, the surface plate 14, the first sand resistance layer 6, the second sand resistance layer 8, the wall support 9 and contains PVA and phosphor The mixture of 15 is baked at a high temperature (the baking temperature is about 450 ° C to 650 ° C), in addition to hardening the wall branches, and burning off the sand resistance layer 8 and PVA and fluorescent The powder mixture of PVA (the remaining 10 camp-ray powder); FIG. 6 consists of the above steps to complete the beginning of another process and includes a simple process of preparing a branched FED wall of the screen image of Gao mentioned solution. -------------- 1--k-install ------ order --.---- {up. (Please read the notes on the back before filling this page) The size of the paper printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm)

Claims (1)

A8 B8 C8 D8 經濟部中央標準局員工消費合作社印裝 293135 κ、申請專利範圍 h—種場放射顯示(Field Emission Display ; FED)器壁支(spacer)之製造 方法,尤指一種利用噴砂(Sandblasting)方式爲其手段之製造方法, 其步驟包括: ⑴首先,在FED基礎平板(baseplate)(基礎平板包含:基板 (substrate)、微陰極(micro cathodes)、電導材質層(conductive material layer)、絕緣層(insulator layer)及陽極閘(gate)等元件)上 佈上一感光性砂阻層,再以光蝕刻(Photolithography)方法,以曝 光顯影之方式蝕刻掉直徑約5〇〜2〇〇微米(^m)之砂阻,形成所 須之砂阻圖案,稱之爲第一砂阻層; (2) 在FED基礎平板及第一砂阻層上佈上一層FED壁支(spacer)材料; (3) 在FED壁支材料層上佈上另一感光性砂阻層,再以光蝕刻方法, 以曝光顯影方式鈾刻掉剩下直徑約5〇〜2〇〇微米(# m)之砂阻, 形成所須之砂阻圖案,此砂阻層稱之爲第二砂阻層; ⑷使用噴砂(sandblasting)方法,去掉第二砂阻層以下之外Fm)壁支 材料,即,只留下第二砂阻層以下之FED壁支材料層; (5)然後將其基礎平板、FED壁支及砂阻層進行烘烤,用以燒掉砂阻 層並且硬化、固化FED壁支; 此即完成FED壁支之製作。 2. 如申請專利範圍第1項所述以噴砂方式製作FED壁支之方法,其FED 壁支材料,通常可以使用玻璃材質或陶瓷材質。 3. 如申請專利範圍第1項所述以噴砂方式製作FED壁支之方法,可以 使用篩網印花(Screen-Printing)方法將其FED壁支材料佈在FED基礎平 板及第一砂阻層上。 4. 如申請專利範圍第1項所述以噴砂方式製作FED壁支之方法,其在 FED壁支材料上之第二砂阻層的橫向位置須對齊第一砂阻層被蝕刻 掉的位置。 5. 如申請專利範圍第1項所述以噴砂方式製作FED壁支之方法,其在 FED壁支烘拷溫度約爲450°C至050°C左右。 6. 如申請專利範圍第1項所述以噴砂方式製作FED壁支之方法,其中 利用篩網印花方式佈上FED壁支材料,其厚度約爲200〜2000//m左 右。 7. —種FED壁支製造方法,尤指一種利用噴砂方式爲其手段之製造方 法,其步驟包括: (1)首先,在FED表面平板上佈上一層含有聚乙烯醇(PVA ; Poly Vinyl Alcohol)和螢光粉之混合物; ---------------{笨------訂,--^----^'.Λ---.----I---------- . . (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度逋用中國國家梯準(CNS ) Α4規格(21〇Χ297公釐) A8 B8 C8 D8 申請專利範圍 ViS 光粉混合物上,佈上一層感光性雜,再以光餓 f法,手J用曝光顯影方式蝕刻掉直獅50〜200" m之砂阻,形 n、!SS須普阻圖案,稱之爲第—砂阻層; 上繫$22去ί卓未覆蓋有第一砂阻層之PVA和蛮光粉之混雜; ί 第一砂阻層上,佈上一層1™壁支材料; 壁f材料層上,再佈上另一感光性砂阻層,利用光蝕刻方 法’以曝光顯影方式蝕刻掉剩下直徑5〇〜2〇0微米(A m)之砂阻, 形成所須之砂阻圖案,稱之爲第二砂阻層; ⑹再^噴砂方式去掉第二砂阻層以下之外的FED壁支材料; ⑺然雙將其表面平板、砂阻層、FED壁支及PVA和螢光粉之混合物 進行烘烤,用以燒掉砂阻層、PVA並且硬化、固化FED壁支; 此即完成FED壁支之製作。 8. 如申請專利範圍第7項所述以噴砂方式製作FED壁支之方法,其FED 壁支材料’通常可以使用玻璃士質或^[瓷材質。 9. 如申請專利範圍第7項所述以噴砂方式製作FED壁支之方法,可以使 用篩網印花方法將其FED壁支材料佈在FED表面平板及第一砂阻層 上。 ίο.如申請專利範圍第7項所述以噴砂方式製作fed壁支之方法,其在 FED壁支材料上之第二砂阻層之橫向位置,須對齊第一砂阻層被触 亥掉的位置。 U.如申請專利範圍第7項所述以噴砂方式製作FED壁支之方法,其中 FED壁支烘烤溫度約爲450°C至650°C左右。 12.如申請專利範圍第7項所述以噴砂方式製作Fm)壁支之方法,其中 利用篩網印花方式佈上FED壁支材料,其厚度約爲2〇〇〜MOO#m左 右。 (請先閱讀背面之注意事項再填寫本頁) 裝· -訂* 中 央 榡 準 局 員 工 消 費 合 本紙張尺度適用中國國家標準(CNS ) A4規格(210X297公釐) IA8 B8 C8 D8 The Ministry of Economic Affairs Central Standards Bureau employee consumer cooperative printed 293135 κ, applied for patent scope h-manufacturing method of field Emission Display (Field Emission Display; FED) wall spacer, especially a method using sandblasting (Sandblasting) ) Method is the manufacturing method of its means, the steps include: (1) First, on the FED baseplate (base plate includes: substrate, micro cathodes, conductive material layer, conductive material layer, insulation Layer (insulator layer) and anode gate (gate) and other components) is coated with a photosensitive sand resist layer, and then using photolithography (Photolithography) method, the exposure and development method to etch away the diameter of about 50 ~ 200 microns ( ^ m) the sand resistance to form the required sand resistance pattern, called the first sand resistance layer; (2) A layer of FED spacer material is laid on the FED foundation plate and the first sand resistance layer; ( 3) Put another photosensitive sand resistance layer on the FED wall support material layer, and then use photo-etching method to etch the remaining sand resistance of about 50 ~ 200 microns (# m) in diameter by exposure and development , To form the required sand resistance pattern, this sand The barrier layer is called the second sand barrier layer; ⑷Sandblasting method is used to remove the Fm) wall support material below the second sand barrier layer, that is, only the FED wall support material below the second sand barrier layer is left (5) Then bake its basic slab, FED wall support and sand resistance layer to burn off the sand resistance layer and harden and solidify the FED wall support; this completes the production of the FED wall support. 2. As described in item 1 of the scope of the patent application, the method for making FED wall supports by sand blasting. The FED wall supports can usually be made of glass or ceramic. 3. As described in item 1 of the patent application scope, the method for making FED wall supports by sandblasting can use the screen-printing method to distribute the FED wall support materials on the FED foundation plate and the first sand resistance layer . 4. As described in item 1 of the scope of the patent application, the method of making the FED wall support by sandblasting, the lateral position of the second sand resist layer on the FED wall support material must be aligned with the position where the first sand resist layer is etched away. 5. The method for making FED wall supports by sandblasting as described in item 1 of the scope of the patent application, the baking temperature of the FED wall supports is about 450 ° C to 050 ° C. 6. The method of making FED wall support by sandblasting as described in item 1 of the patent application scope, in which the FED wall support material is laid by screen printing and its thickness is about 200 ~ 2000 // m. 7. A manufacturing method of FED wall support, especially a manufacturing method using sandblasting as its means. The steps include: (1) First, lay a layer containing polyvinyl alcohol (PVA; Poly Vinyl Alcohol) on the FED surface plate ) And a mixture of fluorescent powder; --------------- {笨 ------ 定 ,-^ ---- ^ '. Λ ---.-- --I ----------... (Please read the precautions on the back before filling in this page) This paper uses the Chinese National Standard (CNS) Α4 specification (21〇Χ297mm) A8 B8 C8 D8 Patent application range ViS light powder mixture, covered with a layer of photosensitive impurities, and then use the light hungry f method, hand J to etch away the sand resistance of straight lion 50 ~ 200 " m by exposure and development method, shape n, SS The Supper pattern is called the first sand barrier layer; the top is $ 22 to mix the PVA with the first sand barrier layer that is not covered with the first sand barrier layer; ί The first sand barrier layer is covered with a layer of 1 ™ Wall support material; on the wall f material layer, another photosensitive sand resistance layer is distributed, and the photoresist method is used to etch away the remaining sand resistance with a diameter of 50 ~ 200 microns (A m) by exposure and development. Form the required sand resistance pattern, called the second Sand resistance layer; ⑹Remove the FED wall support material other than the second sand resistance layer by sandblasting; ⑺ Randomly bake the surface plate, sand resistance layer, FED wall support and the mixture of PVA and phosphor powder , Used to burn off the sand resistance layer, PVA and harden and cure the FED wall branch; this is to complete the production of the FED wall branch. 8. The method for making FED wall supports by sandblasting as described in item 7 of the patent application scope. The FED wall support materials can usually be made of glass or ^ [porcelain. 9. As described in item 7 of the scope of the patent application, the method for making FED wall supports by sandblasting can use the screen printing method to distribute the FED wall supports on the flat plate of the FED surface and the first sand resistance layer. ίο. As described in item 7 of the scope of the patent application, the method for making the fed wall support by sandblasting, the lateral position of the second sand resistance layer on the FED wall support material must be aligned with the first sand resistance layer being touched off position. U. The method for making FED wall supports by sandblasting as described in item 7 of the patent application scope, wherein the baking temperature of the FED wall supports is about 450 ° C to 650 ° C. 12. The method for making Fm) wall supports by sandblasting as described in item 7 of the patent application scope, wherein the FED wall support materials are laid on the screen printing method, and the thickness thereof is about 200 ~ MOO # m. (Please read the precautions on the back before filling in this page) Binding ·-Order * Central Central Bureau of Standards and Administration Staff consumption The standard of this paper is the Chinese National Standard (CNS) A4 (210X297mm) I
TW84112592A 1995-11-23 1995-11-23 Process of fabricating field emission display spacer TW293135B (en)

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TW84112592A TW293135B (en) 1995-11-23 1995-11-23 Process of fabricating field emission display spacer

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TW84112592A TW293135B (en) 1995-11-23 1995-11-23 Process of fabricating field emission display spacer

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7121925B2 (en) 2000-03-31 2006-10-17 Toyoda Gosei Co., Ltd. Method for dicing semiconductor wafer into chips

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7121925B2 (en) 2000-03-31 2006-10-17 Toyoda Gosei Co., Ltd. Method for dicing semiconductor wafer into chips

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