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A manufacturing method of forming shallow junction under low temperature, which is applicable to one silicon substrate with first conductivity, in which on the silicon substrate there is formed active area, comprises of: (1) forming one Pd metal layer on the silicon substrate; (2) forming one silicon material layer on the Pd metal layer; (3) performing one ion implantation to implant second-type impurity into the Pd metal layer; (4) performing one annealing process to make the Pd metal layer react with the silicon substrate to Pd silicide, and pushing the second-type impurity form the Pd metal layer into the silicon substrate, forming second-type doped area with shallow junction.
TW83112107A1994-12-231994-12-23Manufacturing method of forming shallow junction under low temperature
TW291591B
(en)