TW291577B - - Google Patents

Info

Publication number
TW291577B
TW291577B TW083104717A TW83104717A TW291577B TW 291577 B TW291577 B TW 291577B TW 083104717 A TW083104717 A TW 083104717A TW 83104717 A TW83104717 A TW 83104717A TW 291577 B TW291577 B TW 291577B
Authority
TW
Taiwan
Application number
TW083104717A
Other languages
Chinese (zh)
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW291577B publication Critical patent/TW291577B/zh

Links

Classifications

    • H10D64/01312
    • H10D64/0112
    • H10P50/266
TW083104717A 1993-08-20 1994-05-24 TW291577B (en:Method)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20638793 1993-08-20
JP6039457A JPH07111253A (ja) 1993-08-20 1994-03-10 シリサイド形成方法および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW291577B true TW291577B (en:Method) 1996-11-21

Family

ID=26378851

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083104717A TW291577B (en:Method) 1993-08-20 1994-05-24

Country Status (3)

Country Link
JP (1) JPH07111253A (en:Method)
KR (1) KR950006968A (en:Method)
TW (1) TW291577B (en:Method)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11200050A (ja) * 1998-01-14 1999-07-27 Mitsubishi Electric Corp タングステンシリサイド膜の形成方法、半導体装置の製造方法、及び半導体ウェーハ処理装置
JP2937998B1 (ja) 1998-03-16 1999-08-23 山形日本電気株式会社 配線の製造方法
US6583057B1 (en) * 1998-12-14 2003-06-24 Motorola, Inc. Method of forming a semiconductor device having a layer deposited by varying flow of reactants
JP4154471B2 (ja) 2002-11-15 2008-09-24 富士通株式会社 半導体装置の製造方法
JP4858461B2 (ja) * 2008-02-21 2012-01-18 ルネサスエレクトロニクス株式会社 タングステンシリサイド膜の形成方法及び半導体装置の製造方法

Also Published As

Publication number Publication date
KR950006968A (ko) 1995-03-21
JPH07111253A (ja) 1995-04-25

Similar Documents

Publication Publication Date Title
FR2706934B1 (en:Method)
TW274156B (en:Method)
DE69435073D1 (en:Method)
DK0638912T3 (en:Method)
EP0676091A4 (en:Method)
DK114893D0 (en:Method)
DK0611885T3 (en:Method)
EP0674978A4 (en:Method)
TW291577B (en:Method)
DK41893A (en:Method)
FR2706856B1 (en:Method)
DK69093D0 (en:Method)
EP0661739A3 (en:Method)
DK14293D0 (en:Method)
DK9700281U1 (en:Method)
IN178757B (en:Method)
ECSDI930171S (en:Method)
ECSDI930150S (en:Method)
ECSDI930144S (en:Method)
ECSDI930134S (en:Method)
ECSDI930176S (en:Method)
ECSDI930133S (en:Method)
ECSDI930116S (en:Method)
ECSDI930108S (en:Method)
ECSDI930104S (en:Method)