TW279977B - - Google Patents

Info

Publication number
TW279977B
TW279977B TW083103689A TW83103689A TW279977B TW 279977 B TW279977 B TW 279977B TW 083103689 A TW083103689 A TW 083103689A TW 83103689 A TW83103689 A TW 83103689A TW 279977 B TW279977 B TW 279977B
Authority
TW
Taiwan
Application number
TW083103689A
Original Assignee
Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv filed Critical Philips Electronics Nv
Application granted granted Critical
Publication of TW279977B publication Critical patent/TW279977B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3916—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide
    • G11B5/3919—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path
    • G11B5/3922—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure
    • G11B5/3925—Arrangements in which the active read-out elements are coupled to the magnetic flux of the track by at least one magnetic thin film flux guide the guide being interposed in the flux path the read-out elements being disposed in magnetic shunt relative to at least two parts of the flux guide structure the two parts being thin films
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9265—Special properties
    • Y10S428/928—Magnetic property
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12465—All metal or with adjacent metals having magnetic properties, or preformed fiber orientation coordinate with shape
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12472—Microscopic interfacial wave or roughness
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12993—Surface feature [e.g., rough, mirror]

Landscapes

  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Measuring Magnetic Variables (AREA)
TW083103689A 1993-09-24 1994-04-25 TW279977B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP93202759 1993-09-24

Publications (1)

Publication Number Publication Date
TW279977B true TW279977B (zh) 1996-07-01

Family

ID=8214119

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083103689A TW279977B (zh) 1993-09-24 1994-04-25

Country Status (6)

Country Link
US (1) US5527626A (zh)
EP (1) EP0645759A3 (zh)
JP (1) JPH07170002A (zh)
KR (1) KR950009549A (zh)
SG (1) SG44873A1 (zh)
TW (1) TW279977B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417877B (zh) * 2007-03-09 2013-12-01 Ibm 具磁阻裝置之遮蔽偏壓之磁性資料儲存系統

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5585198A (en) * 1993-10-20 1996-12-17 Sanyo Electric Co., Ltd. Magnetorsistance effect element
US5736921A (en) * 1994-03-23 1998-04-07 Sanyo Electric Co., Ltd. Magnetoresistive element
JPH08130337A (ja) * 1994-09-09 1996-05-21 Sanyo Electric Co Ltd 磁気抵抗素子及びその製造方法
EP0731969B1 (en) * 1994-10-05 1999-12-01 Koninklijke Philips Electronics N.V. Magnetic multilayer device including a resonant-tunneling double-barrier structure
EP0789250A3 (en) * 1996-02-12 1997-10-01 Read Rite Corp Giant magnetoresistive thin film transducer with a flow guide structure
US5627704A (en) * 1996-02-12 1997-05-06 Read-Rite Corporation Thin film giant magnetoresistive CPP transducer with flux guide yoke structure
EP0801380A3 (en) * 1996-04-10 1998-03-04 Read-Rite Corporation Giant magnetoresistive transducer with increased output signal
US6223420B1 (en) 1998-12-04 2001-05-01 International Business Machines Corporation Method of making a read head with high resistance soft magnetic flux guide layer for enhancing read sensor efficiency
US6707648B2 (en) * 2000-05-19 2004-03-16 Nih N University Magnetic device, magnetic head and magnetic adjustment method
US6538856B1 (en) 2000-06-21 2003-03-25 International Business Machines Corporation Read head with spin valve sensor having sense current in plane (CIP) thence sense current perpendicular to plane (CPP)
US6731477B2 (en) 2001-09-20 2004-05-04 Hitachi Global Storage Technologies Netherlands B.V. Current-perpendicular-to-plane spin-valve sensor with metallic oxide barrier layer and method of fabrication
JP2004014001A (ja) * 2002-06-06 2004-01-15 Fuji Photo Film Co Ltd 磁気抵抗効果型ヘッド
US7352541B2 (en) * 2004-04-30 2008-04-01 Hitachi Global Storage Technologies Netherlands B.V. CPP GMR using Fe based synthetic free layer
US7477490B2 (en) * 2004-06-30 2009-01-13 Seagate Technology Llc Single sensor element that is naturally differentiated
US7492554B2 (en) * 2005-01-21 2009-02-17 International Business Machines Corporation Magnetic sensor with tilted magnetoresistive structures
US9134386B2 (en) 2011-06-28 2015-09-15 Oracle International Corporation Giant magnetoresistive sensor having horizontal stabilizer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3334956A (en) * 1963-06-17 1967-08-08 Coleman Instr Corp Selective diffraction grating system
US3542453A (en) * 1967-10-25 1970-11-24 Frederick W Kantor Grating device composed of elongated layers
US4477794A (en) * 1981-08-10 1984-10-16 Matsushita Electric Industrial Co., Ltd. Magnetoresistive element
US4591889A (en) * 1984-09-14 1986-05-27 At&T Bell Laboratories Superlattice geometry and devices
FR2648942B1 (fr) * 1989-06-27 1995-08-11 Thomson Csf Capteur a effet magnetoresistif
US5251170A (en) * 1991-11-04 1993-10-05 Nonvolatile Electronics, Incorporated Offset magnetoresistive memory structures
US5189367A (en) * 1991-11-21 1993-02-23 Nec Research Institute, Inc. Magnetoresistor using a superlattice of GaAs and AlGaAs
FR2702919B1 (fr) * 1993-03-19 1995-05-12 Thomson Csf Transducteur magnétorésistif et procédé de réalisation.

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417877B (zh) * 2007-03-09 2013-12-01 Ibm 具磁阻裝置之遮蔽偏壓之磁性資料儲存系統

Also Published As

Publication number Publication date
EP0645759A3 (en) 1996-05-22
EP0645759A2 (en) 1995-03-29
KR950009549A (ko) 1995-04-24
SG44873A1 (en) 1997-12-19
JPH07170002A (ja) 1995-07-04
US5527626A (en) 1996-06-18

Similar Documents

Publication Publication Date Title
FR2714593B1 (zh)
FR2703947B1 (zh)
FR2703510B1 (zh)
FR2706796B1 (zh)
TW279977B (zh)
FR2707012B1 (zh)
IN189430B (zh)
FR2706948B1 (zh)
FR2707021B1 (zh)
FR2706919B3 (zh)
FR2709876B1 (zh)
FR2706776B1 (zh)
FR2706741B1 (zh)
IN176369B (zh)
DK113593D0 (zh)
ECSDI930131S (zh)
IN178056B (zh)
IN175200B (zh)
ECSDI930151S (zh)
IN177898B (zh)
IN177849B (zh)
IN177796B (zh)
IN177570B (zh)
IN177165B (zh)
IN177020B (zh)