TW265509B - - Google Patents
Info
- Publication number
- TW265509B TW265509B TW083104297A TW83104297A TW265509B TW 265509 B TW265509 B TW 265509B TW 083104297 A TW083104297 A TW 083104297A TW 83104297 A TW83104297 A TW 83104297A TW 265509 B TW265509 B TW 265509B
- Authority
- TW
- Taiwan
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70283—Mask effects on the imaging process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/042,316 US5362584A (en) | 1993-04-02 | 1993-04-02 | Phase-shifting transparent lithographic mask for writing contiguous structures from noncontiguous mask areas |
Publications (1)
Publication Number | Publication Date |
---|---|
TW265509B true TW265509B (zh) | 1995-12-11 |
Family
ID=21921201
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW083104297A TW265509B (zh) | 1993-04-02 | 1994-05-12 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5362584A (zh) |
EP (1) | EP0620498B1 (zh) |
JP (1) | JPH06317893A (zh) |
DE (1) | DE69415577T2 (zh) |
TW (1) | TW265509B (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3393926B2 (ja) * | 1993-12-28 | 2003-04-07 | 株式会社東芝 | フォトマスク設計方法及びその装置 |
KR0166836B1 (ko) * | 1996-05-02 | 1999-01-15 | 문정환 | 위상반전 마스크 및 그 제조방법 |
US6114071A (en) * | 1997-11-24 | 2000-09-05 | Asml Masktools Netherlands B.V. | Method of fine feature edge tuning with optically-halftoned mask |
US6312854B1 (en) | 1998-03-17 | 2001-11-06 | Asml Masktools Netherlands B.V. | Method of patterning sub-0.25 lambda line features with high transmission, “attenuated” phase shift masks |
US6184041B1 (en) * | 1998-05-13 | 2001-02-06 | International Business Machines Corporation | Fused hybrid resist shapes as a means of modulating hybrid resist space width |
US6139994A (en) * | 1999-06-25 | 2000-10-31 | Broeke; Doug Van Den | Use of intersecting subresolution features for microlithography |
IT1313154B1 (it) * | 1999-08-05 | 2002-06-17 | St Microelectronics Srl | Maschera litografica per dispositivi a semiconduttore con finestra discavo a sezione poligonale,in particolare avente una sezione di almeno |
US6466373B1 (en) | 1999-10-07 | 2002-10-15 | Siemens Aktiengesellschaft | Trimming mask with semitransparent phase-shifting regions |
AU2001241496A1 (en) * | 2000-02-14 | 2001-08-27 | Asml Masktools B.V. | A method of improving photomask geometry |
EP1150171A3 (en) * | 2000-04-28 | 2003-08-27 | Infineon Technologies North America Corp. | Group connection of reticle sub-shapes to reduce line shortening and improve pattern fidelity |
US6335130B1 (en) | 2000-05-01 | 2002-01-01 | Asml Masktools Netherlands B.V. | System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features |
TW512424B (en) | 2000-05-01 | 2002-12-01 | Asml Masktools Bv | Hybrid phase-shift mask |
KR100428884B1 (ko) | 2000-06-13 | 2004-04-28 | 에이에스엠엘 마스크툴즈 비.브이. | 가변치수를 갖는 세리프를 이용하는 광근접 보정방법 |
EP1299771B1 (en) * | 2000-07-05 | 2011-03-16 | Synopsys, Inc. | Method of designing a phase shift masking for complex patterns |
US7147789B1 (en) * | 2000-10-19 | 2006-12-12 | Hutchinson Technology Incorporated | Process for control of contours formed by etching substrates |
EP1235103B1 (en) * | 2001-02-27 | 2007-04-18 | ASML Netherlands B.V. | Optical proximity correction method utilizing gray bars as sub-resolution assist features |
TW571571B (en) | 2001-03-14 | 2004-01-11 | Asml Masktools Bv | An optical proximity correction method utilizing ruled ladder bars as sub-resolution assist features |
US6551750B2 (en) * | 2001-03-16 | 2003-04-22 | Numerical Technologies, Inc. | Self-aligned fabrication technique for tri-tone attenuated phase-shifting masks |
US6605396B2 (en) | 2001-08-06 | 2003-08-12 | Infineon Technologies, Ag | Resolution enhancement for alternating phase shift masks |
US7355673B2 (en) * | 2003-06-30 | 2008-04-08 | Asml Masktools B.V. | Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout |
US7355681B2 (en) * | 2004-04-09 | 2008-04-08 | Asml Masktools B.V. | Optical proximity correction using chamfers and rounding at corners |
KR101676700B1 (ko) * | 2010-09-03 | 2016-11-16 | 삼성전자 주식회사 | 반도체 장치의 패턴 형성을 위한 마스크 |
US8685597B2 (en) | 2011-10-07 | 2014-04-01 | Seagate Technology Llc | Forming a bridging feature using chromeless phase-shift lithography |
US8603706B2 (en) | 2011-10-07 | 2013-12-10 | Seagate Technology Llc | Forming a bridging feature using chromeless phase-shift lithography |
US8563199B2 (en) | 2011-10-07 | 2013-10-22 | Seagate Technology Llc | Forming a bridging feature using chromeless phase-shift lithography |
EP4106618A4 (en) | 2020-02-19 | 2024-04-24 | Thermo Electron Scientific Instruments LLC | PHASE MASK FOR STRUCTURED LIGHTING |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4360586A (en) * | 1979-05-29 | 1982-11-23 | Massachusetts Institute Of Technology | Spatial period division exposing |
US4631416A (en) * | 1983-12-19 | 1986-12-23 | Hewlett-Packard Company | Wafer/mask alignment system using diffraction gratings |
US4859548A (en) * | 1985-11-04 | 1989-08-22 | Gerhard Heise | Method for generating a lattice structure with a phase shift on the surface of a substrate |
US4902899A (en) * | 1987-06-01 | 1990-02-20 | International Business Machines Corporation | Lithographic process having improved image quality |
US4885231A (en) * | 1988-05-06 | 1989-12-05 | Bell Communications Research, Inc. | Phase-shifted gratings by selective image reversal of photoresist |
TW198129B (zh) * | 1990-06-21 | 1993-01-11 | Matsushita Electron Co Ltd | |
JP3103394B2 (ja) * | 1991-07-12 | 2000-10-30 | タケダ園芸株式会社 | 人工土及び土壌改良方法 |
US5364716A (en) * | 1991-09-27 | 1994-11-15 | Fujitsu Limited | Pattern exposing method using phase shift and mask used therefor |
US5273850A (en) * | 1991-11-04 | 1993-12-28 | Motorola, Inc. | Chromeless phase-shift mask and method for making |
-
1993
- 1993-04-02 US US08/042,316 patent/US5362584A/en not_active Expired - Lifetime
-
1994
- 1994-03-17 EP EP94301927A patent/EP0620498B1/en not_active Expired - Lifetime
- 1994-03-17 DE DE69415577T patent/DE69415577T2/de not_active Expired - Fee Related
- 1994-03-18 JP JP6049092A patent/JPH06317893A/ja active Pending
- 1994-05-12 TW TW083104297A patent/TW265509B/zh active
Also Published As
Publication number | Publication date |
---|---|
EP0620498A1 (en) | 1994-10-19 |
EP0620498B1 (en) | 1998-12-30 |
DE69415577D1 (de) | 1999-02-11 |
JPH06317893A (ja) | 1994-11-15 |
DE69415577T2 (de) | 1999-07-15 |
US5362584A (en) | 1994-11-08 |