TW257883B - Process of bipolar junction transistor - Google Patents

Process of bipolar junction transistor

Info

Publication number
TW257883B
TW257883B TW83108272A TW83108272A TW257883B TW 257883 B TW257883 B TW 257883B TW 83108272 A TW83108272 A TW 83108272A TW 83108272 A TW83108272 A TW 83108272A TW 257883 B TW257883 B TW 257883B
Authority
TW
Taiwan
Prior art keywords
bipolar junction
junction transistor
area
forming
doped base
Prior art date
Application number
TW83108272A
Other languages
English (en)
Inventor
Wen-Yueh Jang
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to TW83108272A priority Critical patent/TW257883B/zh
Application granted granted Critical
Publication of TW257883B publication Critical patent/TW257883B/zh

Links

Landscapes

  • Bipolar Transistors (AREA)
TW83108272A 1994-09-07 1994-09-07 Process of bipolar junction transistor TW257883B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW83108272A TW257883B (en) 1994-09-07 1994-09-07 Process of bipolar junction transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW83108272A TW257883B (en) 1994-09-07 1994-09-07 Process of bipolar junction transistor

Publications (1)

Publication Number Publication Date
TW257883B true TW257883B (en) 1995-09-21

Family

ID=51401746

Family Applications (1)

Application Number Title Priority Date Filing Date
TW83108272A TW257883B (en) 1994-09-07 1994-09-07 Process of bipolar junction transistor

Country Status (1)

Country Link
TW (1) TW257883B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8581339B2 (en) 2011-08-08 2013-11-12 Macronix International Co., Ltd. Structure of NPN-BJT for improving punch through between collector and emitter
US11552168B2 (en) 2018-04-17 2023-01-10 Silanna Asia Pte Ltd Tiled lateral BJT
US12040389B2 (en) 2018-05-30 2024-07-16 Silanna Asia Pte Ltd Tiled lateral thyristor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8581339B2 (en) 2011-08-08 2013-11-12 Macronix International Co., Ltd. Structure of NPN-BJT for improving punch through between collector and emitter
US11552168B2 (en) 2018-04-17 2023-01-10 Silanna Asia Pte Ltd Tiled lateral BJT
TWI810265B (zh) * 2018-04-17 2023-08-01 新加坡商西拉娜亞洲私人有限公司 覆瓦狀側向雙極型接面電晶體及形成電晶體覆瓦之方法
US11973112B2 (en) 2018-04-17 2024-04-30 Silanna Asia Pte Ltd Tiled lateral BJT
US12040389B2 (en) 2018-05-30 2024-07-16 Silanna Asia Pte Ltd Tiled lateral thyristor

Similar Documents

Publication Publication Date Title
ATE123175T1 (de) Lateraler heterogrenzflächen-bipolartransistor.
DE2962270D1 (en) Method for fabricating a bipolar transistor having a polysilicon base contact and a polysilicon or metal emitter contact
EP0314600A3 (en) Self-aligned polysilicon emitter and contact structure for high performance bipolar transistors
KR880001058A (ko) 헤테로 접합형 바이폴러트랜지스터의 제조방법
MY104983A (en) Vertical bipolar transistor.
EP0349022A3 (en) Semiconductor device
TW257883B (en) Process of bipolar junction transistor
HK79795A (en) Protected darlington transistor arrangement
MY107443A (en) Semiconductor device with buried electrode.
TW284909B (en) Bipolar transistor and its semiconductor device
TW363227B (en) Indium doped base in bipolar transistors
EP0251682A3 (en) Integrated bipolar-mos device
EP0656660A3 (en) BiCMOS process for supporting merged devices
EP0231740A3 (en) A polysilicon self-aligned bipolar device and process of manufacturing same
TW355814B (en) Semiconductor device
TW330343B (en) A semiconductor memory device and its manufacturing method
EP0378164A3 (en) Bipolar transistor and method of manufacturing the same
EP0348626A3 (en) Process for fabricating isolated vertical bipolar and jfet transistors
MY108548A (en) Ic carrier.
SE9501385D0 (sv) Bipolar silicon-on-insulator transistor
KR960004094B1 (en) Bipolar electrode wiring method using polysilicon
EP0404109A3 (en) Diode used in reference potential generating circuit for dram
TW227629B (en) Photo receiver with high sensitivity and high current
TW242693B (en) Self-aligned lateral bipolar junction transistor
JPS561567A (en) Manufacture of semiconductor device