TW253994B - - Google Patents

Info

Publication number
TW253994B
TW253994B TW083102109A TW83102109A TW253994B TW 253994 B TW253994 B TW 253994B TW 083102109 A TW083102109 A TW 083102109A TW 83102109 A TW83102109 A TW 83102109A TW 253994 B TW253994 B TW 253994B
Authority
TW
Taiwan
Application number
TW083102109A
Other languages
Chinese (zh)
Original Assignee
Max-Planck-Gesellschaft Zur FDerung Der Wissenschaften E.V
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Max-Planck-Gesellschaft Zur FDerung Der Wissenschaften E.V filed Critical Max-Planck-Gesellschaft Zur FDerung Der Wissenschaften E.V
Application granted granted Critical
Publication of TW253994B publication Critical patent/TW253994B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
TW083102109A 1993-03-16 1994-03-11 TW253994B (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4308375A DE4308375C2 (de) 1993-03-16 1993-03-16 Störspannungskompensierte Halleffekt-Einrichtung

Publications (1)

Publication Number Publication Date
TW253994B true TW253994B (enrdf_load_stackoverflow) 1995-08-11

Family

ID=6482965

Family Applications (1)

Application Number Title Priority Date Filing Date
TW083102109A TW253994B (enrdf_load_stackoverflow) 1993-03-16 1994-03-11

Country Status (2)

Country Link
DE (1) DE4308375C2 (enrdf_load_stackoverflow)
TW (1) TW253994B (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69432102T2 (de) * 1994-09-29 2003-12-11 Ramesh, G.Mani Verfahren zur Kompensation der piezoresistiver Offsetspannung in doppelverbundenen siliziumbasierenden Hall Effekt Elementen
DE10240404A1 (de) * 2002-09-02 2004-03-18 Austriamicrosystems Ag Hall-Sensor und Verfahren zu dessen Betrieb

Also Published As

Publication number Publication date
DE4308375C2 (de) 1998-07-23
DE4308375A1 (de) 1994-09-22

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