TW243544B - - Google Patents
Info
- Publication number
- TW243544B TW243544B TW082110602A TW82110602A TW243544B TW 243544 B TW243544 B TW 243544B TW 082110602 A TW082110602 A TW 082110602A TW 82110602 A TW82110602 A TW 82110602A TW 243544 B TW243544 B TW 243544B
- Authority
- TW
- Taiwan
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/06—Planarisation of inorganic insulating materials
- H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
- H10P95/064—Planarisation of inorganic insulating materials involving a dielectric removal step the removal being chemical etching
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US99932792A | 1992-12-31 | 1992-12-31 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW243544B true TW243544B (cg-RX-API-DMAC7.html) | 1995-03-21 |
Family
ID=25546198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW082110602A TW243544B (cg-RX-API-DMAC7.html) | 1992-12-31 | 1993-12-14 |
Country Status (3)
| Country | Link |
|---|---|
| EP (1) | EP0607684A3 (cg-RX-API-DMAC7.html) |
| JP (1) | JPH06232096A (cg-RX-API-DMAC7.html) |
| TW (1) | TW243544B (cg-RX-API-DMAC7.html) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4511430A (en) * | 1984-01-30 | 1985-04-16 | International Business Machines Corporation | Control of etch rate ratio of SiO2 /photoresist for quartz planarization etch back process |
| US4545852A (en) * | 1984-06-20 | 1985-10-08 | Hewlett-Packard Company | Planarization of dielectric films on integrated circuits |
| DE68922474T2 (de) * | 1988-12-09 | 1996-01-11 | Philips Electronics Nv | Verfahren zum Herstellen einer integrierten Schaltung einschliesslich Schritte zum Herstellen einer Verbindung zwischen zwei Schichten. |
| JP3092185B2 (ja) * | 1990-07-30 | 2000-09-25 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| US5378318A (en) * | 1992-06-05 | 1995-01-03 | Vlsi Technology, Inc. | Planarization |
-
1993
- 1993-12-14 TW TW082110602A patent/TW243544B/zh active
- 1993-12-15 EP EP93310123A patent/EP0607684A3/en not_active Withdrawn
- 1993-12-27 JP JP5330132A patent/JPH06232096A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP0607684A3 (en) | 1995-03-15 |
| JPH06232096A (ja) | 1994-08-19 |
| EP0607684A2 (en) | 1994-07-27 |