TW236036B - - Google Patents
Info
- Publication number
- TW236036B TW236036B TW081106683A TW81106683A TW236036B TW 236036 B TW236036 B TW 236036B TW 081106683 A TW081106683 A TW 081106683A TW 81106683 A TW81106683 A TW 81106683A TW 236036 B TW236036 B TW 236036B
- Authority
- TW
- Taiwan
Links
Classifications
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- H10P76/4085—
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
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- H10P50/268—
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- H10P50/73—
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- H10P76/405—
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/944—Shadow
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US19905588A | 1988-05-26 | 1988-05-26 | |
| US63265890A | 1990-12-27 | 1990-12-27 | |
| US07/750,738 US5260235A (en) | 1988-05-26 | 1991-08-21 | Method of making laser generated I. C. pattern for masking |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW236036B true TW236036B (enExample) | 1994-12-11 |
Family
ID=27393974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081106683A TW236036B (enExample) | 1988-05-26 | 1992-08-24 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US5260235A (enExample) |
| TW (1) | TW236036B (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3072005B2 (ja) * | 1994-08-25 | 2000-07-31 | シャープ株式会社 | 半導体装置及びその製造方法 |
| US5759745A (en) * | 1995-12-05 | 1998-06-02 | Materials Research Group, Inc. | Method of using amorphous silicon as a photoresist |
| US7354631B2 (en) * | 2003-11-06 | 2008-04-08 | Micron Technology, Inc. | Chemical vapor deposition apparatus and methods |
| US7655152B2 (en) * | 2004-04-26 | 2010-02-02 | Hewlett-Packard Development Company, L.P. | Etching |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4217393A (en) * | 1978-07-24 | 1980-08-12 | Rca Corporation | Method of inducing differential etch rates in glow discharge produced amorphous silicon |
| US4242156A (en) * | 1979-10-15 | 1980-12-30 | Rockwell International Corporation | Method of fabricating an SOS island edge passivation structure |
| US4472237A (en) * | 1981-05-22 | 1984-09-18 | At&T Bell Laboratories | Reactive ion etching of tantalum and silicon |
| US4378628A (en) * | 1981-08-27 | 1983-04-05 | Bell Telephone Laboratories, Incorporated | Cobalt silicide metallization for semiconductor integrated circuits |
| US4450041A (en) * | 1982-06-21 | 1984-05-22 | The United States Of America As Represented By The Secretary Of The Navy | Chemical etching of transformed structures |
| DE3524176A1 (de) * | 1985-07-05 | 1987-01-15 | Max Planck Gesellschaft | Lichtmaske und verfahren fuer ihre herstellung |
| JPH0622245B2 (ja) * | 1986-05-02 | 1994-03-23 | 富士ゼロックス株式会社 | 薄膜トランジスタの製造方法 |
| US4897150A (en) * | 1988-06-29 | 1990-01-30 | Lasa Industries, Inc. | Method of direct write desposition of a conductor on a semiconductor |
| US5104481A (en) * | 1988-09-28 | 1992-04-14 | Lasa Industries, Inc. | Method for fabricating laser generated I.C. masks |
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1991
- 1991-08-21 US US07/750,738 patent/US5260235A/en not_active Expired - Fee Related
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1992
- 1992-08-24 TW TW081106683A patent/TW236036B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| US5260235A (en) | 1993-11-09 |