TW236036B - - Google Patents

Info

Publication number
TW236036B
TW236036B TW081106683A TW81106683A TW236036B TW 236036 B TW236036 B TW 236036B TW 081106683 A TW081106683 A TW 081106683A TW 81106683 A TW81106683 A TW 81106683A TW 236036 B TW236036 B TW 236036B
Authority
TW
Taiwan
Application number
TW081106683A
Other languages
Chinese (zh)
Original Assignee
Lasa Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lasa Ind Inc filed Critical Lasa Ind Inc
Application granted granted Critical
Publication of TW236036B publication Critical patent/TW236036B/zh

Links

Classifications

    • H10P76/4085
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0042Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • H10P50/268
    • H10P50/73
    • H10P76/405
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/944Shadow

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
TW081106683A 1988-05-26 1992-08-24 TW236036B (enExample)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US19905588A 1988-05-26 1988-05-26
US63265890A 1990-12-27 1990-12-27
US07/750,738 US5260235A (en) 1988-05-26 1991-08-21 Method of making laser generated I. C. pattern for masking

Publications (1)

Publication Number Publication Date
TW236036B true TW236036B (enExample) 1994-12-11

Family

ID=27393974

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081106683A TW236036B (enExample) 1988-05-26 1992-08-24

Country Status (2)

Country Link
US (1) US5260235A (enExample)
TW (1) TW236036B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3072005B2 (ja) * 1994-08-25 2000-07-31 シャープ株式会社 半導体装置及びその製造方法
US5759745A (en) * 1995-12-05 1998-06-02 Materials Research Group, Inc. Method of using amorphous silicon as a photoresist
US7354631B2 (en) * 2003-11-06 2008-04-08 Micron Technology, Inc. Chemical vapor deposition apparatus and methods
US7655152B2 (en) * 2004-04-26 2010-02-02 Hewlett-Packard Development Company, L.P. Etching

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217393A (en) * 1978-07-24 1980-08-12 Rca Corporation Method of inducing differential etch rates in glow discharge produced amorphous silicon
US4242156A (en) * 1979-10-15 1980-12-30 Rockwell International Corporation Method of fabricating an SOS island edge passivation structure
US4472237A (en) * 1981-05-22 1984-09-18 At&T Bell Laboratories Reactive ion etching of tantalum and silicon
US4378628A (en) * 1981-08-27 1983-04-05 Bell Telephone Laboratories, Incorporated Cobalt silicide metallization for semiconductor integrated circuits
US4450041A (en) * 1982-06-21 1984-05-22 The United States Of America As Represented By The Secretary Of The Navy Chemical etching of transformed structures
DE3524176A1 (de) * 1985-07-05 1987-01-15 Max Planck Gesellschaft Lichtmaske und verfahren fuer ihre herstellung
JPH0622245B2 (ja) * 1986-05-02 1994-03-23 富士ゼロックス株式会社 薄膜トランジスタの製造方法
US4897150A (en) * 1988-06-29 1990-01-30 Lasa Industries, Inc. Method of direct write desposition of a conductor on a semiconductor
US5104481A (en) * 1988-09-28 1992-04-14 Lasa Industries, Inc. Method for fabricating laser generated I.C. masks

Also Published As

Publication number Publication date
US5260235A (en) 1993-11-09

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