TW235372B - - Google Patents

Info

Publication number
TW235372B
TW235372B TW81107822A TW81107822A TW235372B TW 235372 B TW235372 B TW 235372B TW 81107822 A TW81107822 A TW 81107822A TW 81107822 A TW81107822 A TW 81107822A TW 235372 B TW235372 B TW 235372B
Authority
TW
Taiwan
Application number
TW81107822A
Other languages
Chinese (zh)
Original Assignee
Semiconductor Energy Res Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP3278704A external-priority patent/JP2877586B2/ja
Priority claimed from JP3278706A external-priority patent/JP2877587B2/ja
Priority claimed from JP4237764A external-priority patent/JPH0661491A/ja
Application filed by Semiconductor Energy Res Co Ltd filed Critical Semiconductor Energy Res Co Ltd
Application granted granted Critical
Publication of TW235372B publication Critical patent/TW235372B/zh

Links

TW81107822A 1991-09-30 1992-10-01 TW235372B (enrdf_load_stackoverflow)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP3278704A JP2877586B2 (ja) 1991-09-30 1991-09-30 半導体集積回路およびその作製方法
JP3278706A JP2877587B2 (ja) 1991-09-30 1991-09-30 半導体集積回路およびその作製方法
JP17488292 1992-06-09
JP4237764A JPH0661491A (ja) 1992-06-09 1992-08-12 半導体装置の作製方法

Publications (1)

Publication Number Publication Date
TW235372B true TW235372B (enrdf_load_stackoverflow) 1994-12-01

Family

ID=27474600

Family Applications (1)

Application Number Title Priority Date Filing Date
TW81107822A TW235372B (enrdf_load_stackoverflow) 1991-09-30 1992-10-01

Country Status (2)

Country Link
KR (1) KR970002267B1 (enrdf_load_stackoverflow)
TW (1) TW235372B (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470805B (zh) * 2007-10-05 2015-01-21 Semiconductor Energy Lab 薄膜電晶體，具有該薄膜電晶體的顯示裝置，和其製造方法
TWI483400B (zh) * 2007-10-05 2015-05-01 Semiconductor Energy Lab 薄膜電晶體，具有該薄膜電晶體的顯示裝置，和其製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI470805B (zh) * 2007-10-05 2015-01-21 Semiconductor Energy Lab 薄膜電晶體，具有該薄膜電晶體的顯示裝置，和其製造方法
US8945962B2 (en) 2007-10-05 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, display device having thin film transistor, and method for manufacturing the same
TWI483400B (zh) * 2007-10-05 2015-05-01 Semiconductor Energy Lab 薄膜電晶體，具有該薄膜電晶體的顯示裝置，和其製造方法

Also Published As

Publication number Publication date
KR970002267B1 (en) 1997-02-27

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees