TW230823B - - Google Patents
Info
- Publication number
- TW230823B TW230823B TW081105560A TW81105560A TW230823B TW 230823 B TW230823 B TW 230823B TW 081105560 A TW081105560 A TW 081105560A TW 81105560 A TW81105560 A TW 81105560A TW 230823 B TW230823 B TW 230823B
- Authority
- TW
- Taiwan
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
- H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6326—Deposition processes
- H10P14/6349—Deposition of epitaxial materials
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US61785090A | 1990-11-21 | 1990-11-21 | |
| US61827990A | 1990-11-23 | 1990-11-23 | |
| US61827390A | 1990-11-23 | 1990-11-23 | |
| US61835390A | 1990-11-23 | 1990-11-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW230823B true TW230823B (ref) | 1994-09-21 |
Family
ID=27505142
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW081105560A TW230823B (ref) | 1990-11-21 | 1992-07-14 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH06112416A (ref) |
| KR (1) | KR100212409B1 (ref) |
| TW (1) | TW230823B (ref) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100487515B1 (ko) * | 1998-08-17 | 2005-07-07 | 삼성전자주식회사 | 이이피롬 장치의 제조 방법 |
| TWI273712B (en) * | 2005-12-30 | 2007-02-11 | Au Optronics Corp | A method for manufacturing a bottom substrate of a liquid crystal display device with three mask processes |
| US20150048875A1 (en) * | 2013-08-19 | 2015-02-19 | Ememory Technology Inc. | High voltage power control system |
-
1991
- 1991-11-20 KR KR1019910020685A patent/KR100212409B1/ko not_active Expired - Fee Related
- 1991-11-21 JP JP3306372A patent/JPH06112416A/ja active Pending
-
1992
- 1992-07-14 TW TW081105560A patent/TW230823B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06112416A (ja) | 1994-04-22 |
| KR920010881A (ko) | 1992-06-27 |
| KR100212409B1 (ko) | 1999-08-02 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |