TW202432917A - 合成單晶鑽石 - Google Patents

合成單晶鑽石 Download PDF

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Publication number
TW202432917A
TW202432917A TW113100390A TW113100390A TW202432917A TW 202432917 A TW202432917 A TW 202432917A TW 113100390 A TW113100390 A TW 113100390A TW 113100390 A TW113100390 A TW 113100390A TW 202432917 A TW202432917 A TW 202432917A
Authority
TW
Taiwan
Prior art keywords
single crystal
crystal diamond
synthetic single
synthetic
nitrogen atoms
Prior art date
Application number
TW113100390A
Other languages
English (en)
Chinese (zh)
Inventor
角谷均
武藤晴香
西山宣正
Original Assignee
日商住友電氣工業股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商住友電氣工業股份有限公司 filed Critical 日商住友電氣工業股份有限公司
Publication of TW202432917A publication Critical patent/TW202432917A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C01B32/26—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/90—Other properties not specified above

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
TW113100390A 2023-01-11 2024-01-04 合成單晶鑽石 TW202432917A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023002185 2023-01-11
JP2023-002185 2023-01-11

Publications (1)

Publication Number Publication Date
TW202432917A true TW202432917A (zh) 2024-08-16

Family

ID=91896833

Family Applications (1)

Application Number Title Priority Date Filing Date
TW113100390A TW202432917A (zh) 2023-01-11 2024-01-04 合成單晶鑽石

Country Status (6)

Country Link
EP (1) EP4650497A1 (https=)
JP (1) JPWO2024150624A1 (https=)
KR (1) KR20250133896A (https=)
CN (1) CN120569520A (https=)
TW (1) TW202432917A (https=)
WO (1) WO2024150624A1 (https=)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011151414A2 (en) * 2010-06-03 2011-12-08 Element Six Limited Diamond tools
JP6582597B2 (ja) * 2015-06-19 2019-10-02 住友電気工業株式会社 ダイヤモンド単結晶、工具およびダイヤモンド単結晶の製造方法
WO2019077888A1 (ja) 2017-10-20 2019-04-25 住友電気工業株式会社 合成単結晶ダイヤモンド、工具、及び、合成単結晶ダイヤモンドの製造方法
EP3699330A4 (en) * 2017-10-20 2021-06-30 Sumitomo Electric Industries, Ltd. SYNTHETIC SINGLE CRYSTAL DIAMOND
JP6709302B2 (ja) 2019-02-14 2020-06-10 信越ポリマー株式会社 高耐熱・高摺動性フィルム
US12258677B2 (en) * 2019-11-26 2025-03-25 Sumitomo Electric Industries, Ltd. Synthetic single crystal diamond, tool including the same and method of producing synthetic single crystal diamond
JP7582090B2 (ja) 2021-06-22 2024-11-13 トヨタ自動車株式会社 情報処理装置、算出方法及び算出プログラム

Also Published As

Publication number Publication date
JPWO2024150624A1 (https=) 2024-07-18
EP4650497A1 (en) 2025-11-19
CN120569520A (zh) 2025-08-29
WO2024150624A1 (ja) 2024-07-18
KR20250133896A (ko) 2025-09-09

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