TW202430669A - Metal mask and manufacturing method thereof - Google Patents
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- 239000002184 metal Substances 0.000 title claims abstract description 205
- 238000004519 manufacturing process Methods 0.000 title claims description 34
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- 238000005530 etching Methods 0.000 claims description 66
- 238000005520 cutting process Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 11
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- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
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- 239000010959 steel Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
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- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
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Abstract
本發明之金屬遮罩具有有孔區域及周圍區域,前述有孔區域具有複數個貫通孔,前述周圍區域位於前述有孔區域之周圍,前述周圍區域具有應力分散區域,前述應力分散區域具有複數個凹部,前述凹部之俯視下之開口形狀具有長度R之短軸,前述應力分散區域具有於前述短軸方向以節距P排列之前述凹部,前述長度R相對於前述節距P之比(R/P)為0.90以上。The metal mask of the present invention has a perforated area and a surrounding area, the perforated area has a plurality of through holes, the surrounding area is located around the perforated area, the surrounding area has a stress dispersion area, the stress dispersion area has a plurality of recesses, the opening shape of the recesses in a top view has a short axis of length R, the stress dispersion area has the recesses arranged at a pitch P in the direction of the short axis, and the ratio (R/P) of the length R to the pitch P is greater than 0.90.
Description
本揭示係關於一種金屬遮罩及其製造方法。The present disclosure relates to a metal mask and a method for manufacturing the same.
有機EL顯示裝置之像素係藉由使用金屬遮罩藉由蒸鍍使形成像素之材料附著於基板上而形成。因而,金屬遮罩之性能提高對有機EL顯示裝置之畫質之提高事屬重要。例如,於專利文獻1中曾揭示,出於提高蒸鍍之均一性之目的,提供一種具有均一之貫通孔之金屬遮罩。 [先前技術文獻] [專利文獻] The pixels of an organic EL display device are formed by attaching the material forming the pixels to a substrate by evaporation using a metal mask. Therefore, improving the performance of the metal mask is important for improving the image quality of the organic EL display device. For example, Patent Document 1 discloses that a metal mask having uniform through holes is provided for the purpose of improving the uniformity of evaporation. [Prior Technical Document] [Patent Document]
專利文獻1:日本特表2019-508588號公報Patent document 1: Japanese Patent Publication No. 2019-508588
[發明所欲解決之問題][The problem the invention is trying to solve]
且說,於專利文獻1中曾揭示,為了將在拉伸時施加之應力分散,而形成半蝕刻部。專利文獻1所記載之半蝕刻部之一個凹部係具有橫切複數個貫通孔之長度之較大者。In addition, Patent Document 1 discloses that a half-etched portion is formed in order to disperse the stress applied during stretching. One concave portion of the half-etched portion described in Patent Document 1 has a larger length that crosses a plurality of through holes.
然而,如專利文獻1所記載般,若將一個凹部形成為較大,則即便在相同之凹部中,凹部之深度亦容易不同。若凹部之深度不同,則難以將應力均一地分散。若不將應力均一地分散,則於將金屬遮罩設置於框架時,產生皺褶,或設置位置精度降低。此處,「皺褶」意指當在金屬遮罩長度方向施加拉伸力而將金屬遮罩張緊熔接於框架時,在遮罩寬度方向產生之起伏。又,若將一個凹部形成為較大,則於製造時,凹部貫通至背面之風險變高,金屬遮罩之成品率亦可能降低。However, as described in Patent Document 1, if a recess is formed to be larger, the depth of the recess is likely to be different even in the same recess. If the depth of the recess is different, it is difficult to disperse the stress uniformly. If the stress is not dispersed uniformly, wrinkles will be generated when the metal mask is set on the frame, or the accuracy of the setting position will be reduced. Here, "wrinkles" means the undulations generated in the width direction of the mask when a tensile force is applied in the length direction of the metal mask and the metal mask is tensioned and welded to the frame. In addition, if a recess is formed to be larger, the risk of the recess penetrating to the back side during manufacturing becomes higher, and the yield of the metal mask may also be reduced.
本發明係鑒於上述問題點而完成者,其目的在於提供一種能夠將應力更均一地分散、不易產生皺褶、且設置位置精度優異之金屬遮罩、及其高效率之製造方法。 [解決問題之技術手段] The present invention is completed in view of the above-mentioned problems, and its purpose is to provide a metal mask that can disperse stress more evenly, is less likely to produce wrinkles, and has excellent positioning accuracy, and a highly efficient manufacturing method thereof. [Technical means to solve the problem]
本揭示之一實施形態之金屬遮罩, 具有有孔區域、及周圍區域;且 前述有孔區域具有複數個貫通孔; 前述周圍區域位於前述有孔區域之周圍; 前述周圍區域具有應力分散區域; 前述應力分散區域具有複數個凹部; 前述凹部之俯視下之開口形狀具有長度R之短軸; 前述應力分散區域具有於前述短軸方向以節距P排列之前述凹部; 前述長度R相對於前述節距P之比(R/P)為0.90以上。 The metal mask of one embodiment of the present disclosure, has a perforated area and a surrounding area; and the perforated area has a plurality of through holes; the surrounding area is located around the perforated area; the surrounding area has a stress dispersion area; the stress dispersion area has a plurality of recesses; the opening shape of the recess in a top view has a short axis of length R; the stress dispersion area has the recesses arranged at a pitch P in the direction of the short axis; the ratio (R/P) of the length R to the pitch P is greater than 0.90.
本揭示之一實施形態之上述金屬遮罩之製造方法包含: 準備金屬板之步驟,該金屬板具有第1面、及位於前述第1面之相反側之第2面;及 蝕刻步驟,其藉由蝕刻前述金屬板而形成前述金屬遮罩;且 前述金屬遮罩具有有孔區域、及周圍區域; 前述有孔區域具有複數個貫通孔; 前述周圍區域位於前述有孔區域之周圍; 前述周圍區域具有應力分散區域; 前述應力分散區域具有複數個凹部; 前述凹部之俯視下之開口形狀具有長度R之短軸; 前述應力分散區域具有於前述短軸方向以節距P排列之前述凹部; 前述長度R相對於前述節距P之比(R/P)為0.90以上。 [發明之效果] The manufacturing method of the above-mentioned metal mask of one embodiment of the present disclosure includes: A step of preparing a metal plate, the metal plate having a first surface and a second surface located on the opposite side of the aforementioned first surface; and An etching step, which forms the aforementioned metal mask by etching the aforementioned metal plate; and The aforementioned metal mask has a hole area and a surrounding area; The aforementioned hole area has a plurality of through holes; The aforementioned surrounding area is located around the aforementioned hole area; The aforementioned surrounding area has a stress dispersion area; The aforementioned stress dispersion area has a plurality of recesses; The opening shape of the aforementioned recess in a top view has a short axis of length R; The aforementioned stress dispersion area has the aforementioned recesses arranged at a pitch P in the direction of the aforementioned short axis; The ratio of the aforementioned length R to the aforementioned pitch P (R/P) is greater than 0.90. [Effect of the invention]
於本揭示之至少一個實施形態中,提供一種能夠將應力更均一地分散、不易產生皺褶、且設置位置精度優異之金屬遮罩、及其高效率之製造方法。In at least one embodiment of the present disclosure, a metal mask is provided that can disperse stress more evenly, is less likely to produce wrinkles, and has excellent position accuracy, and a highly efficient manufacturing method thereof.
以下,參照圖式,關於本揭示之實施形態進行說明。此外,於本說明書所附之圖式中,為了便於圖示與易於理解,有時將自實物之比例尺及縱橫之尺寸比等予以適宜變更或誇張性表示。In the following, the embodiments of the present disclosure are described with reference to the drawings. In addition, in the drawings attached to this specification, the scale and the ratio of the vertical and horizontal dimensions are sometimes appropriately changed or exaggerated for the convenience of illustration and easy understanding.
於本說明書及/或本圖式中,只要無特別記載,則如以下般解釋。Unless otherwise specified in this specification and/or the drawings, the following explanations shall apply.
意指成為某一構成之基礎之物質之用語可不僅藉由稱呼之不同來相互區別。例如,「基板」、「基材」、「板」、「片材」、或「膜」等用語相當於上述記載。Terms that refer to a substance that forms the basis of a certain structure can be distinguished from each other not only by different names. For example, terms such as "substrate", "base material", "board", "sheet", or "film" are equivalent to the above description.
意指形狀及/或幾何學條件之用語及/或數值無須受嚴格含義約束,可解釋為包含可期待同樣功能之程度之範圍。例如,「平行」及/或「正交」等相當於上述之用語。又,「長度之值」及/或「角度之值」等相當於上述之數值。The terms and/or numerical values referring to shapes and/or geometric conditions need not be strictly defined and can be interpreted as including a range of degrees in which the same function can be expected. For example, "parallel" and/or "orthogonal" are equivalent to the above terms. Also, "length value" and/or "angle value" are equivalent to the above numerical values.
於表達為某一構成位於另一構成之「上」、「下」、「上側」、「下側」、「上方」、或「下方」之情形下,可包含某一構成與另一構成直接相接之態樣、與在某一構成與另一構成之間包含其他構成之態樣。在某一構成與另一構成之間包含其他構成之態樣換言之可表達為某一構成與另一構成間接相接。又,「上」、「上側」、或「上方」之表達可轉換為「下」、「下側」、或「下方」之表達。換言之,上下方向可反轉。When a certain component is expressed as being "on", "under", "upper side", "lower side", "above", or "below" another component, it may include a state where the certain component is directly connected to the other component and a state where another component is included between the certain component and the other component. In other words, the state where another component is included between the certain component and the other component may be expressed as the certain component being indirectly connected to the other component. Furthermore, the expression "on", "upper side", or "above" may be converted into the expression "under", "lower side", or "below". In other words, the up and down directions may be reversed.
於對同一部分及/或具有同樣之功能之部分賦予同一符號或類似之符號時,有時省略重複之記載。又,圖式之尺寸比率有時與實際之比率不同。又,實施形態之構成之一部分有時自圖式省略。When the same part and/or parts having the same function are given the same symbol or similar symbol, repeated description may be omitted. Also, the dimensional ratios in the drawings may be different from the actual ratios. Also, part of the components of the implementation form may be omitted from the drawings.
於不產生矛盾之範圍內,可將實施形態之一個以上之形態與變化例之一個以上之形態組合。又,於不產生矛盾之範圍內,可將實施形態之一個以上之形態彼此組合。又,於不產生矛盾之範圍內,可將變化例之一個以上之形態彼此組合。One or more embodiments of the embodiment may be combined with one or more embodiments of the variation within the scope that no contradiction occurs. Also, one or more embodiments of the embodiment may be combined with each other within the scope that no contradiction occurs. Also, one or more embodiments of the variation may be combined with each other within the scope that no contradiction occurs.
於關於製造方法等方法揭示複數個步驟之情形下,可於所揭示之步驟之間實施未揭示之其他步驟。又,於不產生矛盾之範圍內,步驟之順序無限定。When a plurality of steps are disclosed in a method such as a manufacturing method, other steps not disclosed may be performed between the disclosed steps. In addition, the order of the steps is not limited within the scope of no contradiction.
藉由「~」及/或「-」之記號表達之數值範圍包含置於「~」及/或「-」之符號之前後之數值。例如,表達為「34~38質量%」之數值範圍與表達為「34質量%以上且38質量%以下」之數值範圍相同。The numerical range expressed by the "~" and/or "-" sign includes the numerical values placed before and after the "~" and/or "-" sign. For example, the numerical range expressed as "34-38 mass %" is the same as the numerical range expressed as "34 mass % or more and 38 mass % or less".
關於在本揭示中揭示之數值,藉由將複數個上限之候選值中之任意1個、與複數個下限之候選值中之任意1個組合,可劃定數值範圍。此外,即便不特別提及,亦可藉由將複數個上限之候選值中之任意2個組合來劃定數值範圍,還可將複數個下限之候選值中之任意2個組合來劃定數值範圍。Regarding the numerical values disclosed in this disclosure, a numerical range can be defined by combining any one of a plurality of upper limit candidate values with any one of a plurality of lower limit candidate values. In addition, even if not specifically mentioned, a numerical range can be defined by combining any two of a plurality of upper limit candidate values, and a numerical range can be defined by combining any two of a plurality of lower limit candidate values.
關於本揭示之一實施形態,於以下之段落以後記載。本揭示之一實施形態係本揭示之實施形態之一例。本揭示並非僅由本揭示之一實施形態限定性地解釋。An embodiment of the present disclosure is described in the following paragraphs. An embodiment of the present disclosure is an example of the embodiment of the present disclosure. The present disclosure is not limited to the embodiment of the present disclosure.
本揭示之金屬遮罩可使用於各種用途。雖無特別限定,但例如,本發明之金屬遮罩於有機EL顯示裝置之製造中可被用作用於將有機材料以所期望之圖案於基板上圖案化之金屬遮罩。本揭示之金屬遮罩能夠實現高像素密度之圖案化。於能夠製造之有機EL顯示裝置中,除包含智慧型手機及電視等之顯示器外,亦包含用於顯示或投影用於表現虛擬實境(VR)或擴增實境(AR)之圖像及映像的裝置。The metal mask disclosed herein can be used for various purposes. Although not particularly limited, for example, the metal mask of the present invention can be used as a metal mask for patterning an organic material on a substrate in a desired pattern in the manufacture of an organic EL display device. The metal mask disclosed herein can achieve high pixel density patterning. In addition to displays such as smartphones and televisions, the organic EL display devices that can be manufactured also include devices for displaying or projecting images and images for expressing virtual reality (VR) or augmented reality (AR).
此外,於本說明書及本圖式中只要無特別說明,則作為本發明之一實施形態,記載有於製造有機EL顯示裝置時使用之金屬遮罩及其製造方法之例。In addition, unless otherwise specified in this specification and the drawings, an example of a metal mask used in manufacturing an organic EL display device and a method for manufacturing the same are described as one embodiment of the present invention.
本揭示之第1態樣之金屬遮罩, 具有有孔區域、及周圍區域;且 前述有孔區域具有複數個貫通孔; 前述周圍區域位於前述有孔區域之周圍; 前述周圍區域具有應力分散區域; 前述應力分散區域具有複數個凹部; 前述凹部之俯視下之開口形狀具有長度R之短軸; 前述應力分散區域具有於前述短軸方向以節距P排列之前述凹部; 前述長度R相對於前述節距P之比(R/P)為0.90以上。 The metal mask of the first embodiment of the present disclosure, has a perforated area and a surrounding area; and the perforated area has a plurality of through holes; the surrounding area is located around the perforated area; the surrounding area has a stress dispersion area; the stress dispersion area has a plurality of recesses; the opening shape of the recess in a top view has a short axis of length R; the stress dispersion area has the recesses arranged at a pitch P in the direction of the short axis; the ratio (R/P) of the length R to the pitch P is greater than 0.90.
本揭示之第2態樣係如上述之第1態樣之金屬遮罩者,其中前述凹部排列成錯位狀或格子狀。The second aspect of the present disclosure is the metal mask of the first aspect described above, wherein the recesses are arranged in a staggered or grid pattern.
本揭示之第3態樣係如上述之第1態樣或第2態樣之金屬遮罩者,其中相鄰之前述凹部之壁面會合。The third aspect of the present disclosure is the metal mask of the first aspect or the second aspect, wherein the wall surfaces of the adjacent aforementioned recesses meet.
本揭示之第4態樣係如上述之第1態樣至第3態樣中任一態樣之金屬遮罩者,其中 前述周圍區域之最厚之部分具有高度H0;且 前述應力分散區域之最薄之部分具有高度H1; 前述高度H1相對於前述高度H0之比(H1/H0)為0.20以上且0.90以下。 The fourth aspect of the present disclosure is a metal mask as in any of the first to third aspects described above, wherein the thickest portion of the aforementioned surrounding area has a height H0; and the thinnest portion of the aforementioned stress dispersion area has a height H1; the ratio of the aforementioned height H1 to the aforementioned height H0 (H1/H0) is greater than 0.20 and less than 0.90.
本揭示之第5態樣係如上述之第1態樣至第4態樣中任一態樣之金屬遮罩者,其中 前述周圍區域具有緣;且 前述應力分散區域位於前述緣與前述有孔區域之間。 The fifth aspect of the present disclosure is a metal mask as in any of the first to fourth aspects described above, wherein the surrounding area has an edge; and the stress dispersion area is located between the edge and the porous area.
本揭示之第6態樣係如上述之第5態樣之金屬遮罩者,其中 前述周圍區域之前述緣具有一對長邊及一對短邊;且 前述應力分散區域位於前述長邊之前述緣與前述有孔區域之間。 The sixth aspect of the present disclosure is a metal mask as in the fifth aspect described above, wherein the aforementioned edge of the surrounding area has a pair of long sides and a pair of short sides; and the aforementioned stress dispersion area is located between the aforementioned edge of the aforementioned long side and the aforementioned perforated area.
本揭示之第7態樣係如上述之第1態樣至第6態樣中任一態樣之金屬遮罩者,其 具有複數個前述有孔區域;且 前述應力分散區域位於複數個前述有孔區域之間。 The seventh aspect of the present disclosure is a metal mask as in any of the above-mentioned aspects 1 to 6, which has a plurality of the aforementioned porous regions; and the aforementioned stress dispersion region is located between the plurality of the aforementioned porous regions.
本揭示之第8態樣係如上述之第1態樣至第7態樣中任一態樣之金屬遮罩者,其中 前述周圍區域具有切割線;且 前述切割線係凹部或貫通孔之行; 前述應力分散區域位於前述切割線與前述有孔區域之間。 The eighth aspect of the present disclosure is a metal mask as in any of the first to seventh aspects, wherein the surrounding area has a cutting line; and the cutting line is a row of recesses or through holes; and the stress dispersion area is located between the cutting line and the hole area.
本揭示之第9態樣係如上述之第1態樣至第8態樣中任一態樣之金屬遮罩者,其中 前述周圍區域具有切割線;且 前述切割線係凹部或貫通孔之行; 前述切割線位於前述應力分散區域與前述有孔區域之間。 The ninth aspect of the present disclosure is a metal mask as in any of the first to eighth aspects described above, wherein the aforementioned surrounding area has a cutting line; and the aforementioned cutting line is a row of recesses or through holes; and the aforementioned cutting line is located between the aforementioned stress dispersion area and the aforementioned hole area.
本揭示之第10態樣之金屬遮罩之製造方法包含以下步驟: 準備金屬板之步驟,該金屬板具有第1面、及位於前述第1面之相反側之第2面;及 蝕刻步驟,其藉由蝕刻前述金屬板而形成前述金屬遮罩;且 前述金屬遮罩具有有孔區域、及周圍區域; 前述有孔區域具有複數個貫通孔; 前述周圍區域位於前述有孔區域之周圍; 前述周圍區域具有應力分散區域; 前述應力分散區域具有複數個凹部; 前述凹部之俯視下之開口形狀具有長度R之短軸; 前述應力分散區域具有於前述短軸方向以節距P排列之前述凹部; 前述長度R相對於前述節距P之比(R/P)為0.90以上。 The manufacturing method of the metal mask of the 10th aspect of the present disclosure includes the following steps: A step of preparing a metal plate, the metal plate having a first surface and a second surface located on the opposite side of the first surface; and An etching step, which forms the metal mask by etching the metal plate; and The metal mask has a hole area and a surrounding area; The hole area has a plurality of through holes; The surrounding area is located around the hole area; The surrounding area has a stress dispersion area; The stress dispersion area has a plurality of recesses; The opening shape of the recess in a top view has a short axis of length R; The stress dispersion area has the aforementioned recesses arranged at a pitch P in the direction of the short axis; The ratio of the aforementioned length R to the aforementioned pitch P (R/P) is greater than 0.90.
本揭示之金屬遮罩20具有有孔區域22、及周圍區域23。有孔區域22係形成有複數個貫通孔25之區域。又,周圍區域23係位於有孔區域22之周圍之區域。進而,周圍區域23具備具有規定之凹部之應力分散區域24。The metal mask 20 disclosed in the present invention has a perforated region 22 and a peripheral region 23. The perforated region 22 is a region formed with a plurality of through holes 25. Moreover, the peripheral region 23 is a region located around the perforated region 22. Furthermore, the peripheral region 23 has a stress dispersing region 24 having a predetermined concave portion.
於圖1中顯示本揭示之一實施形態之金屬遮罩20之第2面20b側之俯視圖。如圖1所示,金屬遮罩20可於俯視下具有大致矩形狀之輪廓。此外,於本揭示中,「俯視」意指自沿著金屬遮罩20之板面之面觀察金屬遮罩20。FIG1 shows a top view of the second surface 20b side of the metal mask 20 of one embodiment of the present disclosure. As shown in FIG1, the metal mask 20 may have a substantially rectangular outline in a top view. In addition, in the present disclosure, "top view" means observing the metal mask 20 from a surface along the plate surface of the metal mask 20.
於本揭示之金屬遮罩20中,一個有孔區域22可構成為對應於一個有機EL顯示裝置。例如,如圖1所示,金屬遮罩20可沿著長邊方向D2,具有空開規定之間隔地配置成一行之複數個有孔區域22。於圖1中,周圍區域23位於各有孔區域22之周圍。藉由使用此種金屬遮罩20,能夠對基板92蒸鍍複數個有機EL顯示裝置。In the metal mask 20 of the present disclosure, one perforated region 22 can be configured to correspond to one organic EL display device. For example, as shown in FIG1 , the metal mask 20 can have a plurality of perforated regions 22 arranged in a row with a predetermined interval along the long side direction D2. In FIG1 , the surrounding region 23 is located around each perforated region 22. By using such a metal mask 20, a plurality of organic EL display devices can be evaporated on the substrate 92.
作為構成金屬遮罩20之材料無特別限定,例如,舉出:含有鎳之鐵合金、不銹鋼等含有鉻之鐵合金、鎳或鎳-鈷合金等。The material constituting the metal mask 20 is not particularly limited, and examples thereof include iron alloys containing nickel, iron alloys containing chromium such as stainless steel, nickel, or nickel-cobalt alloys.
其中,較佳為含有鎳之鐵合金。藉由使用含有鎳之鐵合金,可將金屬遮罩20之熱膨脹係數設為與框架15之熱膨脹係數及基板92之熱膨脹係數同等之值。藉此,可於蒸鍍處理之間,抑制因金屬遮罩20、框架15及基板92之尺寸變化之差異引起之位置偏移之產生。因而,可抑制因位置偏移引起之附著於基板92上之蒸鍍材料98之尺寸精度及位置精度之降低。Among them, an iron alloy containing nickel is preferred. By using an iron alloy containing nickel, the thermal expansion coefficient of the metal mask 20 can be set to a value equivalent to the thermal expansion coefficient of the frame 15 and the thermal expansion coefficient of the substrate 92. In this way, the generation of positional deviation caused by the difference in dimensional changes of the metal mask 20, the frame 15 and the substrate 92 during the evaporation process can be suppressed. Therefore, the reduction in dimensional accuracy and positional accuracy of the evaporation material 98 attached to the substrate 92 caused by the positional deviation can be suppressed.
作為含有鎳之鐵合金,無特別限定,例如,舉出:除30質量%以上34質量%以下之鎳外亦含有鈷之超銦鋼材、含有含34質量%以上38質量%以下之鎳之銦鋼材、及含有48質量%以上54質量%以下之鎳之低熱膨脹Fe-Ni系鍍敷合金等含有0質量%以上54質量%以下之鎳之鐵合金。The iron alloy containing nickel is not particularly limited, and examples thereof include: iron alloys containing 0% to 54% by mass, such as super indium steel containing cobalt in addition to 30% to 34% by mass of nickel, indium steel containing 34% to 38% by mass of nickel, and low thermal expansion Fe-Ni based plated alloy containing 48% to 54% by mass of nickel.
其次,關於有孔區域22之細節進行說明。首先,於有孔區域22之細節之前,關於本揭示之金屬遮罩20具有之面進行說明。本揭示之金屬遮罩20具有第1面20aと第2面20b作為正反面。Next, the details of the hole area 22 are described. First, before the details of the hole area 22, the surfaces of the metal mask 20 disclosed in the present invention are described. The metal mask 20 disclosed in the present invention has a first surface 20a and a second surface 20b as the front and back surfaces.
於本揭示中,藉由有孔區域22之正反面中之貫通孔25之口徑來區別金屬遮罩20之第1面20a與第2面20b。具體而言,第1面20a於有孔區域22中意指貫通孔25之開口面積小之面,第2面20b意指貫通孔25之開口面積大之面。又,如圖2E等所示,於在第2面20b中相鄰之貫通孔25之第2凹部35之第2壁面36會合之情形下,可將由包圍1個貫通孔25之稜線33封閉之範圍S3視為貫通孔25之開口。該情形下,由稜線33封閉之範圍為開口面積。In the present disclosure, the first surface 20a and the second surface 20b of the metal mask 20 are distinguished by the diameter of the through hole 25 in the front and back surfaces of the hole area 22. Specifically, the first surface 20a means the surface with a small opening area of the through hole 25 in the hole area 22, and the second surface 20b means the surface with a large opening area of the through hole 25. In addition, as shown in FIG. 2E and the like, in the case where the second wall surfaces 36 of the second recessed portions 35 of the adjacent through holes 25 in the second surface 20b meet, the range S3 closed by the ridge 33 surrounding one through hole 25 can be regarded as the opening of the through hole 25. In this case, the range closed by the ridge 33 is the opening area.
又,基於蒸鍍步驟之觀點,第1面20a可為於將金屬遮罩裝置10收容於蒸鍍裝置90之情形下,與基板92對面之金屬遮罩20之面(參照圖7)。又,第2面20b可為於如圖7所示般將金屬遮罩裝置10收容於蒸鍍裝置90之情形下位於保持蒸鍍材料98之坩堝94側之金屬遮罩20之面(參照圖7)。Furthermore, from the perspective of the evaporation step, the first surface 20a may be the surface of the metal mask 20 opposite to the substrate 92 when the metal mask device 10 is accommodated in the evaporation device 90 (see FIG. 7 ). Furthermore, the second surface 20b may be the surface of the metal mask 20 located on the crucible 94 side holding the evaporation material 98 when the metal mask device 10 is accommodated in the evaporation device 90 as shown in FIG. 7 (see FIG. 7 ).
於圖2A中顯示自第2面20b側觀察有孔區域22之俯視圖。如圖2A所示,金屬遮罩20之各有孔區域22具有複數個貫通孔25。貫通孔25可由所期望之圖案形成。例如,貫通孔25可沿著相互交叉之二方向分別以規定之節距排列成格子狀。又,貫通孔25可沿著相互交叉之二方向分別以規定之節距排列成錯位狀。FIG. 2A shows a top view of the hole area 22 viewed from the second surface 20b. As shown in FIG. 2A, each hole area 22 of the metal mask 20 has a plurality of through holes 25. The through holes 25 can be formed in a desired pattern. For example, the through holes 25 can be arranged in a grid shape at a predetermined pitch along two mutually intersecting directions. In addition, the through holes 25 can be arranged in a staggered shape at a predetermined pitch along two mutually intersecting directions.
上述二方向可分別與金屬遮罩20之長邊方向D2或寬度方向D1一致。有孔區域22中之貫通孔25之節距無特別限定。例如,於將金屬遮罩20用於製作行動電話或數位相機等之顯示器(0.5英吋以上且32英吋以下左右)之情形下,貫通孔25之節距於寬度方向D1及長邊方向D2之各方向上可為20 μm以上254 μm以下左右。The above two directions may be respectively consistent with the long side direction D2 or the width direction D1 of the metal mask 20. The pitch of the through holes 25 in the hole area 22 is not particularly limited. For example, when the metal mask 20 is used to manufacture a display (about 0.5 inches or more and about 32 inches or less) of a mobile phone or a digital camera, the pitch of the through holes 25 in each direction of the width direction D1 and the long side direction D2 may be about 20 μm or more and about 254 μm or less.
貫通孔25可於厚度方向N自金屬遮罩20之第1面20a貫通至第2面20b。於蒸鍍步驟中,蒸鍍材料98通過貫通孔25而附著於基板92上。即,各貫通孔25於基板92上劃定供蒸鍍材料附著之部位。有孔區域22之貫通孔25之圖案對應於使蒸鍍材料98附著之圖案。The through hole 25 can penetrate from the first surface 20a to the second surface 20b of the metal mask 20 in the thickness direction N. In the evaporation step, the evaporation material 98 is attached to the substrate 92 through the through hole 25. That is, each through hole 25 defines a location for the evaporation material to be attached on the substrate 92. The pattern of the through hole 25 in the hole area 22 corresponds to the pattern for the evaporation material 98 to be attached.
於使蒸鍍材料98附著之圖案根據蒸鍍材料98之種類而不同之情形下,亦可根據蒸鍍材料98之種類,使用貫通孔25之圖案不同之金屬遮罩20。又,於無論種類為何,使蒸鍍材料98附著之圖案均相同之情形下,可使用相同之金屬遮罩20。該情形下,藉由使金屬遮罩20與基板92相對移動,可將不同種類之蒸鍍材料98以相同之圖案附著。In the case where the pattern of the deposited material 98 is different depending on the type of the deposited material 98, the metal mask 20 having different patterns of the through holes 25 can be used according to the type of the deposited material 98. In addition, in the case where the pattern of the deposited material 98 is the same regardless of the type, the same metal mask 20 can be used. In this case, by moving the metal mask 20 and the substrate 92 relative to each other, different types of deposited materials 98 can be attached with the same pattern.
如圖2A所示,有孔區域22可具備複數個貫通孔25及複數條稜線33。稜線33可以區劃相鄰之貫通孔25之方式配置。As shown in FIG2A , the apertured region 22 may include a plurality of through holes 25 and a plurality of ridges 33. The ridges 33 may be arranged in a manner to partition adjacent through holes 25.
其次,藉由有孔區域之剖視圖及立體圖,關於貫通孔進一步詳細說明。圖2B係沿著圖2A所示之I-I’線之剖視圖。圖2C係沿著圖2A所示之II-II’線之剖視圖。圖2B及圖2C所示之剖視圖係於橫斷貫通孔25與稜線33之方向切斷有孔區域22之情形之剖視圖。Next, the through hole is further described in detail by means of the cross-sectional view and the stereoscopic view of the hole area. FIG. 2B is a cross-sectional view along the I-I' line shown in FIG. 2A. FIG. 2C is a cross-sectional view along the II-II' line shown in FIG. 2A. The cross-sectional views shown in FIG. 2B and FIG. 2C are cross-sectional views of the hole area 22 cut in the direction transverse to the through hole 25 and the ridge 33.
圖2D係沿著圖2A所示之III-III’線之剖視圖。圖2D所示之剖視圖係於通過貫通孔25與頂部32之方向切斷有孔區域22之情形之剖視圖。此處,頂部32係於有孔區域22中高度為極大之部分。又,頂部32可為稜線33中高度為極大之部分。FIG2D is a cross-sectional view along the line III-III' shown in FIG2A. The cross-sectional view shown in FIG2D is a cross-sectional view of the case where the perforated area 22 is cut in the direction passing through the through hole 25 and the top 32. Here, the top 32 is a portion with a very large height in the perforated area 22. Alternatively, the top 32 may be a portion with a very large height in the ridge 33.
如圖2B~圖2D所示,貫通孔25可為第1面20a側之第1凹部30與第2面20b側之第2凹部35連通者。此時,第1凹部30之俯視下之面積可自第1面20a向第2面20b逐漸變小。又,第2凹部35之俯視下之面積可自第2面20b向第1面20a逐漸變小。又,第1凹部30可構成為較第2凹部35為小徑之凹部。As shown in FIG. 2B to FIG. 2D , the through hole 25 may be a first recess 30 on the first surface 20a side and a second recess 35 on the second surface 20b side connected. At this time, the area of the first recess 30 in a top view may gradually decrease from the first surface 20a to the second surface 20b. In addition, the area of the second recess 35 in a top view may gradually decrease from the second surface 20b to the first surface 20a. In addition, the first recess 30 may be configured as a recess with a smaller diameter than the second recess 35.
又,如圖2B~圖2D所示,第1凹部30之第1壁面31、與第2凹部35之第2壁面36可經由周狀之連接部41連接。連接部41係連接第1凹部30與第2凹部35之稜部。於連接部41,貫通孔25之壁面擴展之方向不連續地變化。於本揭示之一實施形態中,在連接部41中,俯視下之貫通孔25之開口面積可為最小。又,除連接部41以外,亦可為俯視下之貫通孔25之開口面積為最小。Furthermore, as shown in FIG. 2B to FIG. 2D , the first wall surface 31 of the first recess 30 and the second wall surface 36 of the second recess 35 can be connected via a circumferential connecting portion 41. The connecting portion 41 is a ridge connecting the first recess 30 and the second recess 35. In the connecting portion 41, the direction in which the wall surface of the through hole 25 expands changes discontinuously. In one embodiment of the present disclosure, in the connecting portion 41, the opening area of the through hole 25 in a top view can be minimized. Furthermore, in addition to the connecting portion 41, the opening area of the through hole 25 in a top view can also be minimized.
於圖2E中顯示自第2面20b側觀察圖2A所示之區域S1之立體圖。如圖2E所示,稜線33區劃相鄰之貫通孔25。例如,如圖2E所示,於有孔區域22之第2面20b側,各貫通孔25可由複數條稜線33包圍。FIG2E shows a three-dimensional view of the region S1 shown in FIG2A viewed from the second surface 20b. As shown in FIG2E, ridges 33 divide adjacent through holes 25. For example, as shown in FIG2E, on the second surface 20b side of the perforated region 22, each through hole 25 may be surrounded by a plurality of ridges 33.
如圖2E所示,相鄰之第2凹部35之第2壁面36可會合。這亦可謂於相鄰之第2凹部35之間不殘留構成金屬遮罩20之金屬板51之第2面51b之狀態。該情形下,由會合之第2壁面36形成稜線33。如圖2E所示,由會合之第2壁面36形成之稜線33之高度之高度非為一定,可根據與貫通孔25之中心相隔之距離而變化。例如,自貫通孔25之中心至稜線33之距離越長,稜線33之高度越高。As shown in FIG2E , the second walls 36 of the adjacent second recesses 35 may meet. This can also be referred to as a state where the second surface 51 b of the metal plate 51 constituting the metal mask 20 is not left between the adjacent second recesses 35. In this case, the ridge 33 is formed by the met second walls 36. As shown in FIG2E , the height of the ridge 33 formed by the met second walls 36 is not constant, but may vary according to the distance from the center of the through hole 25. For example, the longer the distance from the center of the through hole 25 to the ridge 33, the higher the height of the ridge 33.
此種貫通孔25可如後述之製造方法般,藉由以於相鄰之第2凹部35之間不殘存金屬板51之第2面51b之方式蝕刻金屬板51而形成。Such a through hole 25 can be formed by etching the metal plate 51 in such a manner that the second surface 51b of the metal plate 51 does not remain between the adjacent second recesses 35, as in a manufacturing method described later.
又,雖未圖示,但相鄰之第2凹部35之第2壁面36可不會合。這亦可謂相鄰之第2凹部35沿著第2面20b之方向分開。該情形下,於相鄰之第2凹部35之間作為第2面20b而殘留之部分為區劃相鄰之貫通孔25之稜線33。又,該情形下,稜線33可為殘留於相鄰之第1凹部30之間之金屬板51之第1面51a。該情形下,稜線33之高度可為一定。Furthermore, although not shown, the second wall surfaces 36 of the adjacent second recesses 35 may not meet. This can also be said that the adjacent second recesses 35 are separated along the direction of the second surface 20b. In this case, the portion remaining as the second surface 20b between the adjacent second recesses 35 is the ridge 33 that demarcates the adjacent through hole 25. Furthermore, in this case, the ridge 33 may be the first surface 51a of the metal plate 51 remaining between the adjacent first recesses 30. In this case, the height of the ridge 33 may be constant.
進而,雖未圖示,但於有孔區域22之第1面20a側,相鄰之貫通孔25可沿第1面20a之面方向分開。換言之,可於相鄰之第1凹部30之間殘留金屬板51之第1面51a。Furthermore, although not shown, adjacent through holes 25 may be separated along the surface direction of the first surface 20a on the first surface 20a of the hole region 22. In other words, the first surface 51a of the metal plate 51 may remain between adjacent first recesses 30.
此外,金屬板51之第1面51a可對應於金屬遮罩20之第1面20a,此外,金屬板51之第2面51b可對應於金屬遮罩20之第2面20b。In addition, the first surface 51 a of the metal plate 51 may correspond to the first surface 20 a of the metal mask 20 , and in addition, the second surface 51 b of the metal plate 51 may correspond to the second surface 20 b of the metal mask 20 .
周圍區域23係位於有孔區域22之周圍之區域。周圍區域23可以包圍有孔區域22之方式配置。周圍區域23可為藉由位於有孔區域22之周圍而支持有孔區域22之區域。The surrounding area 23 is an area located around the hole area 22. The surrounding area 23 may be arranged in a manner of surrounding the hole area 22. The surrounding area 23 may be an area that supports the hole area 22 by being located around the hole area 22.
周圍區域23具有規定之應力分散區域24。藉此,即便對金屬遮罩施加張力,亦能夠將應力更均一地分散。因而,不易於金屬遮罩產生皺褶。又,將金屬遮罩設置於框架時之設置位置精度進一步提高。此外,作為對金屬遮罩施加張力之場景,無特別限定,但例如,舉出將金屬遮罩設置於框架時、及搬送金屬遮罩時等。The surrounding area 23 has a predetermined stress dispersion area 24. Thus, even if tension is applied to the metal mask, the stress can be dispersed more uniformly. Therefore, wrinkles are less likely to be generated on the metal mask. In addition, the accuracy of the setting position when the metal mask is set on the frame is further improved. In addition, the scene where tension is applied to the metal mask is not particularly limited, but for example, when the metal mask is set on the frame and when the metal mask is transported, etc. are cited.
又,周圍區域23可為不意圖供蒸鍍材料98通過之區域。基於該觀點,周圍區域23主要可具有未形成貫通孔之無孔面。惟,雖出於各種目的,周圍區域23具有無孔面,但可於無孔面以外之部分在局部具有不以蒸鍍材料通過為目的之貫通孔。於本揭示中,「無孔面」意指不具有貫通孔之面。Furthermore, the surrounding area 23 may be an area not intended for the evaporation material 98 to pass through. Based on this viewpoint, the surrounding area 23 may mainly have a non-porous surface without through holes. However, although the surrounding area 23 has a non-porous surface for various purposes, a through hole not intended for the evaporation material to pass through may be partially formed in a portion other than the non-porous surface. In the present disclosure, "non-porous surface" means a surface without through holes.
如後述般,金屬遮罩20固定於框架15而構成金屬遮罩裝置10。周圍區域23可具有固定於框架15之端部23a。如圖1所示,於金屬遮罩20為長條之棒狀之情形下,端部23a可位於長邊方向D2之兩端。又,端部23a可具有U字狀之缺口等。As described later, the metal mask 20 is fixed to the frame 15 to form the metal mask device 10. The peripheral area 23 may have an end 23a fixed to the frame 15. As shown in FIG1 , when the metal mask 20 is in the shape of a long bar, the end 23a may be located at both ends of the long side direction D2. In addition, the end 23a may have a U-shaped notch or the like.
端部23a可構成為於將金屬遮罩20固定於框架15之後,其一部分能夠切斷。進而,端部23a可如圖1所示般,與其他周圍區域23一體地構成,亦可由與其他周圍區域不同之構件構成。該情形下,端部可藉由例如熔接與周圍區域之其他部分接合。The end portion 23a may be configured so that a portion thereof can be cut off after the metal mask 20 is fixed to the frame 15. Furthermore, the end portion 23a may be integrally configured with the other surrounding regions 23 as shown in FIG1 , or may be configured by a member different from the other surrounding regions. In this case, the end portion may be joined to the other portions of the surrounding region by, for example, welding.
周圍區域23之最厚之部分具有高度H0。周圍區域23之最厚之部分可為周圍區域23中之自第1面20a至第2面20b之高度。高度H0較佳的是可為50 μm以下,可為45 μm以下,可為40 μm以下,可為35 μm以下,可為30 μm以下,可為25 μm以下,可為20 μm以下。藉由減小周圍區域之高度,可藉由蝕刻等將有孔區域22構成為更薄,有望可抑制於蒸鍍步驟中蒸鍍材料98附著於第2凹部35之第2壁面36。The thickest portion of the surrounding area 23 has a height H0. The thickest portion of the surrounding area 23 may be the height from the first surface 20a to the second surface 20b in the surrounding area 23. The height H0 may preferably be 50 μm or less, 45 μm or less, 40 μm or less, 35 μm or less, 30 μm or less, 25 μm or less, or 20 μm or less. By reducing the height of the surrounding area, the porous area 22 may be made thinner by etching or the like, and it is expected that the evaporation material 98 may be suppressed from adhering to the second wall surface 36 of the second recess 35 in the evaporation step.
高度H0較佳的是可為2.5 μm以上,可為5 μm以上,可為10 μm以上,可為15 μm以上。藉由增大周圍區域之高度,金屬遮罩20之強度有望進一步提高。藉此,例如有望進一步抑制有孔區域22之變形或斷裂。The height H0 is preferably 2.5 μm or more, 5 μm or more, 10 μm or more, or 15 μm or more. By increasing the height of the surrounding area, the strength of the metal mask 20 is expected to be further improved. This, for example, can further suppress deformation or fracture of the porous area 22.
應力分散區域24具有複數個凹部37。應力分散區域24所具有之凹部37亦稱為「第3凹部37」。於圖3A中顯示自第2面20b側觀察應力分散區域24之俯視圖。The stress dispersion region 24 has a plurality of recesses 37. The recesses 37 of the stress dispersion region 24 are also referred to as "third recesses 37." FIG. 3A shows a top view of the stress dispersion region 24 viewed from the second surface 20b side.
如圖3A所示,應力分散區域24具有於短軸方向以節距P排列之第3凹部37。第3凹部37具有長度R之短軸。於圖3A中顯示短軸方向與D2方向並行之態樣,但不限制於此。例如,短軸方向可與D1方向並行,短軸方向亦可為不與D1方向及D2方向並行,而與該等方向交叉之方向。As shown in FIG3A , the stress dispersion region 24 has third recesses 37 arranged at a pitch P in the minor axis direction. The third recesses 37 have a minor axis of length R. FIG3A shows that the minor axis direction is parallel to the D2 direction, but the present invention is not limited thereto. For example, the minor axis direction may be parallel to the D1 direction, or the minor axis direction may be a direction that is not parallel to the D1 direction and the D2 direction but intersects these directions.
圖3B係沿著圖3A所示之IV-IV’線之剖視圖。此處,IV-IV’線可為與短軸方向平行之線。如圖3B所示,可第3凹部37之第3壁面38會合,形成稜線39。稜線39區劃相鄰之第3凹部37。此處,第3凹部37之俯視下之開口形狀可為由稜線39劃出之形狀。FIG. 3B is a cross-sectional view along the IV-IV' line shown in FIG. 3A. Here, the IV-IV' line may be a line parallel to the minor axis direction. As shown in FIG. 3B, the third wall surface 38 of the third recess 37 may meet to form a ridge 39. The ridge 39 divides the adjacent third recess 37. Here, the opening shape of the third recess 37 in a top view may be the shape drawn by the ridge 39.
圖3C係沿著圖3A所示之V-V’線之剖視圖。圖3B及圖3C所示之剖視圖係於橫斷第3凹部37與稜線39之方向切斷應力分散區域24之情形之剖視圖。圖3D係沿著圖3A所示之VI-VI’線之剖視圖。圖3D所示之剖視圖係於通過第3凹部37與稜線39之交點之方向切斷應力分散區域24之情形之剖視圖。FIG3C is a cross-sectional view along the V-V' line shown in FIG3A. The cross-sectional views shown in FIG3B and FIG3C are cross-sectional views of the case where the stress dispersion region 24 is cut in the direction that crosses the third recess 37 and the ridge 39. FIG3D is a cross-sectional view along the VI-VI' line shown in FIG3A. The cross-sectional view shown in FIG3D is a cross-sectional view of the case where the stress dispersion region 24 is cut in the direction that passes through the intersection of the third recess 37 and the ridge 39.
又,於圖3E中顯示自第2面20b側觀察圖3A所示之區域S2之立體圖。如圖3E所示,稜線39區劃相鄰之第3凹部37。例如,如圖3E所示,於應力分散區域24之第2面20b側,各第3凹部37可由複數條稜線39包圍。3E shows a three-dimensional view of the region S2 shown in FIG3A viewed from the second surface 20b side. As shown in FIG3E , ridges 39 divide adjacent third recesses 37. For example, as shown in FIG3E , each third recess 37 on the second surface 20b side of the stress dispersion region 24 may be surrounded by a plurality of ridges 39.
此外,於圖3B~圖3E中顯示第3凹部37形成於第2面20b之例。然而,不限定於此,第3凹部37可形成於第2面20b,亦可形成於第1面20a,還可形成於該等兩者。例如,藉由在第2面20b側形成第3凹部37,而第2面20b側之有孔區域22與周圍區域23之體積差變小,應力分散效果進一步提高,有望進一步抑制張緊時之皺褶產生等。第3凹部37之俯視下之面積可自第2面20b向第1面20a逐漸變小。In addition, in FIG. 3B to FIG. 3E, an example in which the third recess 37 is formed on the second surface 20b is shown. However, the present invention is not limited thereto, and the third recess 37 may be formed on the second surface 20b, may be formed on the first surface 20a, or may be formed on both. For example, by forming the third recess 37 on the second surface 20b side, the volume difference between the hole area 22 and the surrounding area 23 on the second surface 20b side becomes smaller, and the stress dispersion effect is further improved, and it is expected that the generation of wrinkles during tension can be further suppressed. The area of the third recess 37 in a top view may gradually decrease from the second surface 20b to the first surface 20a.
第3凹部37可以所期望之圖案形成。例如,第3凹部37可沿著相互交叉之二方向(D1、D2)分別以規定之節距排列成格子狀。例如,如圖3A所示,相鄰之第3凹部37可沿著面方向相鄰。換言之,相鄰之第3凹部37之第3壁面38可會合。又,如圖4A所示,相鄰之第3凹部37可沿著面方向分開。換言之,相鄰之第3凹部37之第3壁面38可不會合。進而,如圖4B所示,可於規定之方向上,相鄰之第3凹部37相鄰,於其他方向上,相鄰之第3凹部37分開。The third recess 37 may be formed in a desired pattern. For example, the third recess 37 may be arranged in a grid shape at a predetermined pitch along two directions (D1, D2) that intersect each other. For example, as shown in FIG. 3A, the adjacent third recesses 37 may be adjacent along the surface direction. In other words, the third walls 38 of the adjacent third recesses 37 may meet. Furthermore, as shown in FIG. 4A, the adjacent third recesses 37 may be separated along the surface direction. In other words, the third walls 38 of the adjacent third recesses 37 may not meet. Furthermore, as shown in FIG. 4B, the adjacent third recesses 37 may be adjacent in a predetermined direction, and the adjacent third recesses 37 may be separated in other directions.
又,第3凹部37沿著相互交叉之二方向分別以規定之節距排列成錯位狀。例如,如圖4C所示,相鄰之第3凹部37可沿著面方向相鄰。換言之,相鄰之第3凹部37之第3壁面38可會合。又,圖4D所示,相鄰之第3凹部37可沿著面方向分開。換言之,相鄰之第3凹部37之第3壁面38可不會合。進而,如圖4E所示,可於規定之方向上,相鄰之第3凹部37相鄰,於其他方向上,相鄰之第3凹部37分開。Furthermore, the third recesses 37 are arranged in a staggered state at a predetermined pitch along two directions intersecting each other. For example, as shown in FIG. 4C , the adjacent third recesses 37 may be adjacent along the surface direction. In other words, the third walls 38 of the adjacent third recesses 37 may meet. Furthermore, as shown in FIG. 4D , the adjacent third recesses 37 may be separated along the surface direction. In other words, the third walls 38 of the adjacent third recesses 37 may not meet. Furthermore, as shown in FIG. 4E , the adjacent third recesses 37 may be adjacent in a predetermined direction, and the adjacent third recesses 37 may be separated in other directions.
上述二方向可分別與金屬遮罩20之長邊方向D2或寬度方向D1一致。應力分散區域24中之第3凹部37之節距無特別限定,於寬度方向D1及長邊方向D2之各方向上可為20 μm以上254 μm以下左右。The above two directions may be respectively consistent with the longitudinal direction D2 or the width direction D1 of the metal mask 20. The pitch of the third recesses 37 in the stress dispersion region 24 is not particularly limited, and may be about 20 μm to 254 μm in each of the width direction D1 and the longitudinal direction D2.
此外,第3凹部37可以上述以外之任意之圖案配置。又,此時,相鄰之第3凹部37之壁面可會合,亦可不會合。In addition, the third recesses 37 may be arranged in any pattern other than the above. In addition, at this time, the wall surfaces of the adjacent third recesses 37 may or may not meet.
於俯視第3凹部37時,開口形狀可具有圓形、橢圓形、四角形等各種形狀。例如,如圖4F所示,將橢圓形之第3凹部37排列成錯位狀。又,可為長條之四角形排列之條帶狀。When the third recesses 37 are viewed from above, the opening shape may be circular, elliptical, quadrilateral, etc. For example, as shown in FIG. 4F , the third recesses 37 of elliptical shape are arranged in a staggered shape. Alternatively, the third recesses 37 of elongated quadrilateral shape may be arranged in a strip shape.
第3凹部37之俯視下之開口形狀具有長度R之短軸。如圖4A及圖4D所示,於相鄰之第3凹部37沿著面方向分開之情形下,可根據第2面20b中之第3凹部37之開口形狀來特定短軸之長度R。又,如圖3A、圖3E等般,於相鄰之第3凹部37沿著面方向分開之情形下,可根據由包圍1個第3凹部37之稜線39封閉之範圍S4來特定短軸之長度R。The opening shape of the third recess 37 in a plan view has a short axis of length R. As shown in FIG. 4A and FIG. 4D , when the adjacent third recesses 37 are separated in the surface direction, the length R of the short axis can be specified based on the opening shape of the third recess 37 in the second surface 20b. Also, as shown in FIG. 3A , FIG. 3E , etc., when the adjacent third recesses 37 are separated in the surface direction, the length R of the short axis can be specified based on the range S4 closed by the ridge 39 surrounding one third recess 37.
開口形狀之短軸意指通過開口形狀之重心點且將開口形狀一分為二之線段中其長度最短之線段。The minor axis of an opening shape refers to the shortest line segment among the line segments passing through the center of gravity of the opening shape and dividing the opening shape into two.
更具體而言,若開口形狀為矩形,則短軸之方向與長度R和其短邊之方向與長度一致(參照圖4A~圖4E)。若開口形狀為正方形,則短軸之方向與長度R和其任一邊之方向與長度一致。若開口形狀為菱形,則短軸之方向與長度R和較短之對角線之方向與長度一致。若開口形狀為橢圓形,則短軸之方向與度R和其短徑之方向與長度一致(參照圖4F)。若開口形狀為圓形,則短軸之方向與長度R和其直徑之方向與長度一致。More specifically, if the opening shape is a rectangle, the direction and length R of the minor axis are consistent with the direction and length of its short side (see Figures 4A to 4E). If the opening shape is a square, the direction and length R of the minor axis are consistent with the direction and length of any side. If the opening shape is a rhombus, the direction and length R of the minor axis are consistent with the direction and length of the shorter diagonal. If the opening shape is an ellipse, the direction and length R of the minor axis are consistent with the direction and length of its minor diameter (see Figure 4F). If the opening shape is a circle, the direction and length R of the minor axis are consistent with the direction and length of its diameter.
又,於本實施形態中,節距P係於短軸方向排列之第3凹部37之間隔。節距P係於短軸方向排列之第3凹部37之重心點之間隔。例如,於如圖4A~圖4B般第3凹部37排列成格子狀之情形下,於短軸方向相鄰之第3凹部37之間隔為節距P。又,於圖4C~圖4F中,在短軸方向相鄰之第3凹部37於D1方向位置偏移,排列成錯位狀。即便存在此種位置偏移,如圖4C~圖4F般,於短軸方向相鄰之第3凹部37之間隔亦為節距P。Furthermore, in the present embodiment, the pitch P is the interval between the third recesses 37 arranged in the minor axis direction. The pitch P is the interval between the center points of the third recesses 37 arranged in the minor axis direction. For example, when the third recesses 37 are arranged in a grid pattern as shown in FIGS. 4A to 4B, the interval between the third recesses 37 adjacent to each other in the minor axis direction is the pitch P. Furthermore, in FIGS. 4C to 4F, the third recesses 37 adjacent to each other in the minor axis direction are offset in the D1 direction and arranged in a misaligned state. Even if there is such a positional offset, the interval between the third recesses 37 adjacent to each other in the minor axis direction is the pitch P as shown in FIGS. 4C to 4F.
短軸長度R較佳的是可為250 μm以下,可為225 μm以下,可為200 μm以下,可為175 μm以下,可為150 μm以下,可為125 μm以下,可為100 μm以下,可為75 μm以下,可為50 μm以下,可為40 μm以下,可為30 μm以下。又,短軸長度R較佳的是可為10 μm以上,可為20 μm以上,可為30 μm以上,可為40 μm以上,可為50 μm以上,可為60 μm以上,可為70 μm以上,可為80 μm以上,可為90 μm以上,可為100 μm以上。The minor axis length R is preferably 250 μm or less, 225 μm or less, 200 μm or less, 175 μm or less, 150 μm or less, 125 μm or less, 100 μm or less, 75 μm or less, 50 μm or less, 40 μm or less, or 30 μm or less. Furthermore, the minor axis length R is preferably 10 μm or more, 20 μm or more, 30 μm or more, 40 μm or more, 50 μm or more, 60 μm or more, 70 μm or more, 80 μm or more, 90 μm or more, or 100 μm or more.
應力分散區域24具有於短軸方向以節距P排列之第3凹部37。節距P較佳的是可為300 μm以下,可為250 μm以下,可為225 μm以下,可為200 μm以下,可為175 μm以下,可為150 μm以下,可為125 μm以下,可為100 μm以下,可為75 μm以下,可為50 μm以下。又,節距P較佳的是可為20 μm以上,可為30 μm以上,可為40 μm以上,可為50 μm以上,可為60 μm以上,可為70 μm以上,可為80 μm以上,可為90 μm以上,可為100 μm以上。The stress dispersion region 24 has third recesses 37 arranged at a pitch P in the minor axis direction. The pitch P is preferably 300 μm or less, 250 μm or less, 225 μm or less, 200 μm or less, 175 μm or less, 150 μm or less, 125 μm or less, 100 μm or less, 75 μm or less, or 50 μm or less. Furthermore, the pitch P is preferably 20 μm or more, 30 μm or more, 40 μm or more, 50 μm or more, 60 μm or more, 70 μm or more, 80 μm or more, 90 μm or more, or 100 μm or more.
又,長度R相對於節距P之比(R/P)為0.90以上,較佳的是可為0.92以上,可為0.94以上,可為0.96以上,可為0.98以上。比(R/P)較佳的是可為1.00以下,可為0.99以下,可為0.98以下。Furthermore, the ratio (R/P) of the length R to the pitch P is 0.90 or more, preferably 0.92 or more, 0.94 or more, 0.96 or more, or 0.98 or more. The ratio (R/P) is preferably 1.00 or less, 0.99 or less, or 0.98 or less.
此外,如圖3A所示,於相鄰之第3凹部37之第3壁面38會合之情形下,在短軸方向排列之第3凹部37之節距P與短軸之長度R相等。因而,該情形之比(R/P)為1.00。3A , when the third wall surfaces 38 of the adjacent third recesses 37 meet, the pitch P of the third recesses 37 arranged in the minor axis direction is equal to the minor axis length R. Therefore, the ratio (R/P) in this case is 1.00.
藉由將短軸長度R、及比(R/P)設為上述下限值以上,而於應力分散區域24中,將第3凹部37更大且接近地構成。因而,可藉由應力分散區域24將應力更均一地分散。藉此,即便於對金屬遮罩施加張力之情形下,亦不易產生皺褶,可提高設置位置精度。又,藉由將短軸長度R1及比(R/P)設為上述上限值以下,而金屬遮罩之強度有望進一步提高。By setting the minor axis length R1 and the ratio (R/P) to be greater than the above lower limit, the third recess 37 can be formed larger and closer in the stress dispersion area 24. Therefore, the stress can be more uniformly dispersed by the stress dispersion area 24. Thus, even when tension is applied to the metal mask, wrinkles are less likely to occur, and the accuracy of the installation position can be improved. In addition, by setting the minor axis length R1 and the ratio (R/P) to be less than the above upper limit, the strength of the metal mask can be expected to be further improved.
又,藉由將節距P設為上述上限值以下,而於應力分散區域24中,將相鄰之第3凹部3更接近地構成。因而,可藉由應力分散區域24將應力更均一地分散。藉此,即便於對金屬遮罩施加張力之情形下,亦不易產生皺褶,可提高設置位置精度。又,藉由將節距P設為上述下限值以上,而金屬遮罩之強度有望進一步提高。Furthermore, by setting the pitch P to be below the above upper limit, the adjacent third recesses 3 are formed closer together in the stress dispersion region 24. Therefore, the stress can be dispersed more uniformly by the stress dispersion region 24. Thus, even when tension is applied to the metal mask, wrinkles are less likely to occur, and the accuracy of the installation position can be improved. Furthermore, by setting the pitch P to be above the above lower limit, the strength of the metal mask is expected to be further improved.
此外,短軸長度R、節距P、及比(R/P)之範圍可藉由上述之複數個下限之候選值中之任意1個、與上述之複數個上限之候選值中之任意1個之組合來決定。In addition, the ranges of the minor axis length R, the pitch P, and the ratio (R/P) can be determined by combining any one of the above-mentioned plurality of lower limit candidate values with any one of the above-mentioned plurality of upper limit candidate values.
應力分散區域24之最薄之部分具有高度H1。應力分散區域24之最薄之部分可為應力分散區域24中之第3凹部37之底之部分。例如,於將第3凹部37形成於第2面20b之情形下,高度H1可為自第1面20a至第3凹部37之底之高度。又,於將第3凹部37形成於第1面20a之情形下,高度H1可為自第2面20b至第3凹部37之底之高度。此外,第3凹部37之底可為於應力分散區域24中高度為極小之部分。The thinnest portion of the stress dispersion area 24 has a height H1. The thinnest portion of the stress dispersion area 24 may be a portion of the bottom of the third recess 37 in the stress dispersion area 24. For example, when the third recess 37 is formed on the second surface 20b, the height H1 may be a height from the first surface 20a to the bottom of the third recess 37. Furthermore, when the third recess 37 is formed on the first surface 20a, the height H1 may be a height from the second surface 20b to the bottom of the third recess 37. In addition, the bottom of the third recess 37 may be a portion of the stress dispersion area 24 having a very small height.
高度H1較佳的是可為45 μm以下,可為40 μm以下,可為35 μm以下,可為30 μm以下,可為25 μm以下,可為20 μm以下。高度H1較佳的是可為2.5 μm以上,可為5 μm以上,可為10 μm以上。The height H1 is preferably 45 μm or less, 40 μm or less, 35 μm or less, 30 μm or less, 25 μm or less, or 20 μm or less. The height H1 is preferably 2.5 μm or more, 5 μm or more, or 10 μm or more.
又,高度H1相對於高度H0之比(H1/H0)較佳的是可為0.20以上,可為0.25以上,可為0.30以上,可為0.35以上,可為0.40以上,可為0.45以上。又,H1之比(H1/H0)較佳的是可為0.80以下,可為0.75以下,可為0.70以下,可為0.65以下,可為0.60以下,可為0.55以下。Furthermore, the ratio of the height H1 to the height H0 (H1/H0) is preferably 0.20 or more, 0.25 or more, 0.30 or more, 0.35 or more, 0.40 or more, or 0.45 or more. Furthermore, the ratio of H1 (H1/H0) is preferably 0.80 or less, 0.75 or less, 0.70 or less, 0.65 or less, 0.60 or less, or 0.55 or less.
藉由將高度H1及比(H1/H0)設為上述範圍內,而應力之分散性能提高,且其均一分散性有望進一步提高。By setting the height H1 and the ratio (H1/H0) within the above range, the stress dispersion performance is improved and its uniform dispersion is expected to be further improved.
此外,高度H1及比(H1/H0)之範圍可藉由上述之複數個下限之候選值中之任意1個、與上述之複數個上限之候選值中之任意1個之組合來決定。In addition, the ranges of the height H1 and the ratio (H1/H0) can be determined by combining any one of the above-mentioned plurality of candidate values for the lower limit and any one of the above-mentioned plurality of candidate values for the upper limit.
應力分散區域24可形成於周圍區域23之任意之位置。以下,參照圖1,關於周圍區域23中之應力分散區域24之位置之例進行說明。於圖1中,根據位置顯示應力分散區域24a~24d。The stress dispersion region 24 can be formed at any position of the surrounding region 23. Hereinafter, an example of the position of the stress dispersion region 24 in the surrounding region 23 will be described with reference to Fig. 1. In Fig. 1, stress dispersion regions 24a to 24d are shown according to the position.
應力分散區域24可位於周圍區域23之緣23b與有孔區域22之間。於圖1中,周圍區域23之緣23b具有一對長邊23c及一對短邊23d。此時,應力分散區域24a可位於長邊23c與有孔區域22之間。又,應力分散區域24c、24d可位於短邊23d與有孔區域22之間。進而,應力分散區域24a可位於有孔區域22之周圍,應力分散區域24a可以包圍有孔區域22之周圍之方式配置。The stress dispersion region 24 may be located between the edge 23b of the surrounding region 23 and the porous region 22. In FIG. 1 , the edge 23b of the surrounding region 23 has a pair of long sides 23c and a pair of short sides 23d. In this case, the stress dispersion region 24a may be located between the long sides 23c and the porous region 22. Furthermore, the stress dispersion region 24c and 24d may be located between the short sides 23d and the porous region 22. Furthermore, the stress dispersion region 24a may be located around the porous region 22, and the stress dispersion region 24a may be arranged in a manner of surrounding the porous region 22.
於長邊方向D2上,應力分散區域24a之寬度L1與有孔區域22之寬度L2可設為大致相同。寬度L1相對於寬度L2之比(L1/L2)較佳的是可為0.80以上,可為0.90以上,亦可為1.00以上。又,比(L1/L2)可為2.00以下,可為1.50以下,可為1.20以下,可為1.10以下,亦可為1.00以下。In the longitudinal direction D2, the width L1 of the stress dispersion region 24a and the width L2 of the perforated region 22 may be set to be substantially the same. The ratio (L1/L2) of the width L1 to the width L2 may preferably be 0.80 or more, 0.90 or more, or 1.00 or more. In addition, the ratio (L1/L2) may be 2.00 or less, 1.50 or less, 1.20 or less, 1.10 or less, or 1.00 or less.
於寬度方向D1上,應力分散區域24c、24d之寬度L3、與有孔區域22之寬度L4可設為大致相同。寬度L3相對於寬度L4之比(L3/L4)較佳的是可為0.80以上,可為0.90以上,可為1.00以上。又,比(L3/L4)較佳的是可為1.20以下,可為1.10以下,亦可為1.00以下。In the width direction D1, the width L3 of the stress dispersion regions 24c and 24d and the width L4 of the hole region 22 can be set to be substantially the same. The ratio (L3/L4) of the width L3 to the width L4 is preferably 0.80 or more, 0.90 or more, or 1.00 or more. Furthermore, the ratio (L3/L4) is preferably 1.20 or less, 1.10 or less, or 1.00 or less.
於寬度方向D1上,應力分散區域24c、24d之寬度L3、與周圍區域23之寬度L0可設為大致相同。寬度L3相對於寬度L0之比(L3/L0)較佳的是可為0.70以上,可為0.80以上,亦可為0.90以上。又,比(L3/L0)較佳的是可為0.95以下,可為0.90以下,亦可為0.85以下。In the width direction D1, the width L3 of the stress dispersion regions 24c and 24d and the width L0 of the surrounding region 23 can be set to be substantially the same. The ratio (L3/L0) of the width L3 to the width L0 is preferably 0.70 or more, 0.80 or more, or 0.90 or more. Furthermore, the ratio (L3/L0) is preferably 0.95 or less, 0.90 or less, or 0.85 or less.
於有孔區域22存在複數個時,應力分散區域24b可位於複數個有孔區域22之間。When there are a plurality of porous regions 22 , the stress dispersion region 24 b may be located between the plurality of porous regions 22 .
於寬度方向D1上,應力分散區域24b之寬度L5、與有孔區域22之寬度L4可設為大致相同。寬度L5相對於寬度L4之比(L5/L4)較佳的是可為0.80以上,可為0.90以上,亦可為1.00以上。又,比(L5/L4)較佳的是可為1.20以下,可為1.10以下,亦可為1.00以下。In the width direction D1, the width L5 of the stress dispersion region 24b and the width L4 of the hole region 22 can be set to be substantially the same. The ratio (L5/L4) of the width L5 to the width L4 is preferably 0.80 or more, 0.90 or more, or 1.00 or more. Furthermore, the ratio (L5/L4) is preferably 1.20 or less, 1.10 or less, or 1.00 or less.
於寬度方向D1上,應力分散區域24b之寬度L5、與周圍區域23之寬度L0可設為大致相同。寬度L5相對於寬度L0之比(L5/L0)較佳的是可為0.70以上,可為0.80以上,亦可為0.90以上。又,比(L5/L0)較佳的是可為0.95以下,可為0.90以下,亦可為0.85以下。In the width direction D1, the width L5 of the stress dispersion region 24b and the width L0 of the surrounding region 23 can be set to be substantially the same. The ratio (L5/L0) of the width L5 to the width L0 is preferably 0.70 or more, 0.80 or more, or 0.90 or more. Furthermore, the ratio (L5/L0) is preferably 0.95 or less, 0.90 or less, or 0.85 or less.
周圍區域23可具有切割線26。切割線26為切斷周圍區域23時之切斷線。切割線26例如可為貫通孔或經半蝕刻等之凹部以規定之間隔排列之行。可設為於切割線26處,周圍區域23能夠切斷。例如,可設為於將金屬遮罩20熔接於框架15之後,在位於較熔接之部位靠外側之切割線26處,切斷周圍區域23。The peripheral area 23 may have a cutting line 26. The cutting line 26 is a cutting line when the peripheral area 23 is cut. The cutting line 26 may be, for example, a row of through holes or recesses formed by half etching arranged at a predetermined interval. The peripheral area 23 may be cut at the cutting line 26. For example, after the metal mask 20 is welded to the frame 15, the peripheral area 23 may be cut at the cutting line 26 located outside the welded portion.
應力分散區域24c可位於切割線26與有孔區域22之間。又,應力分散區域24d可位於切割線26與短邊23d之間。換言之,切割線26可位於應力分散區域24d與有孔區域22之間。The stress dispersion region 24c may be located between the cutting line 26 and the hole region 22. In addition, the stress dispersion region 24d may be located between the cutting line 26 and the short side 23d. In other words, the cutting line 26 may be located between the stress dispersion region 24d and the hole region 22.
應力分散區域24可為矩形狀,亦可為大致扇狀、多角形狀、圓狀、或橢圓狀。有孔區域22與應力分散區域24均可具有矩形狀。此時,應力分散區域24之一邊可與有孔區域22之一邊大致並行地配置。The stress dispersion area 24 may be rectangular, or may be substantially fan-shaped, polygonal, circular, or elliptical. The porous area 22 and the stress dispersion area 24 may both be rectangular. In this case, one side of the stress dispersion area 24 may be substantially parallel to one side of the porous area 22.
本揭示之一實施形態之金屬遮罩之製造方法包含:準備步驟,其準備金屬板51,該金屬板51具有第1面51a、及位於第1面51a之相反側之第2面51b;及蝕刻步驟,其藉由蝕刻金屬板51而形成上述金屬遮罩20。The manufacturing method of the metal mask of one embodiment of the present disclosure includes: a preparation step, which prepares a metal plate 51, wherein the metal plate 51 has a first surface 51a and a second surface 51b located on the opposite side of the first surface 51a; and an etching step, which forms the above-mentioned metal mask 20 by etching the metal plate 51.
此外,以下,關於藉由蝕刻來製造金屬遮罩20之方法進行說明,但金屬遮罩20可為藉由蝕刻來形成者,亦可為藉由雷射加工來形成者,還可為藉由電鑄法來形成者。In addition, the following describes a method of manufacturing the metal mask 20 by etching, but the metal mask 20 may be formed by etching, may be formed by laser processing, or may be formed by electrocasting.
關於本揭示之一實施形態之一金屬遮罩20之製造方法,主要參照圖5A~圖5F進行說明。圖5A係對使用金屬板51來製造金屬遮罩20之製造裝置70隨著其處理順序進行顯示之概略圖。於圖5A中顯示自抗蝕膜形成裝置71至剝離裝置74連續供給金屬板51之例。然而,本揭示之金屬遮罩20之製造方法不限於此,例如,可每當經由各裝置之處理時捲取金屬板51而設為捲繞體之狀態。又,可於向各裝置供給金屬板51時,自捲繞體將金屬板51放捲並供給。The manufacturing method of the metal mask 20 of one embodiment of the present disclosure is mainly explained with reference to Figures 5A to 5F. Figure 5A is a schematic diagram showing a manufacturing device 70 that uses a metal plate 51 to manufacture the metal mask 20 along its processing sequence. Figure 5A shows an example of continuously supplying the metal plate 51 from the anti-etching film forming device 71 to the stripping device 74. However, the manufacturing method of the metal mask 20 of the present disclosure is not limited to this. For example, the metal plate 51 can be rolled up and set to a coil state each time it is processed by each device. In addition, when the metal plate 51 is supplied to each device, the metal plate 51 can be unwound from the coil and supplied.
以下,關於金屬遮罩20之製造方法之各步驟詳細地說明。The following describes in detail the steps of the method for manufacturing the metal mask 20.
首先,準備具有所期望之厚度之金屬板51(準備步驟)。金屬板51可為捲於芯52之捲繞體50之狀態。作為製作具有所期望之厚度之金屬板51之方法,無特別限定,例如舉出軋製法、鍍敷成膜法等。First, a metal plate 51 having a desired thickness is prepared (preparation step). The metal plate 51 may be in the form of a roll 50 wound around a core 52. There is no particular limitation on the method for producing the metal plate 51 having a desired thickness, and examples thereof include a rolling method, a coating method, and the like.
繼而,使用抗蝕膜形成裝置71,於金屬板51之第1面51a及第2面51b形成抗蝕膜53a、53b(圖5B)。具體而言,抗蝕膜53a、53b可藉由將乾膜抗蝕劑貼附於第1面51a及第2面51b而形成。又,抗蝕膜53a、53b可將包含感光性抗蝕劑材料之塗佈液塗佈於第1面51a及第2面51b並乾燥而形成。Next, an anti-etching film forming device 71 is used to form anti-etching films 53a and 53b on the first surface 51a and the second surface 51b of the metal plate 51 (FIG. 5B). Specifically, the anti-etching films 53a and 53b can be formed by attaching a dry film anti-etching agent to the first surface 51a and the second surface 51b. Alternatively, the anti-etching films 53a and 53b can be formed by applying a coating liquid containing a photosensitive anti-etching agent material to the first surface 51a and the second surface 51b and drying it.
作為乾膜抗蝕劑及塗佈液無特別限定,但可使用先前周知者。又,如此般形成之抗蝕膜53a、53b可為負型抗蝕劑,亦可為正型抗蝕劑。其中,較佳為使用負型。There is no particular limitation on the dry film resist and the coating liquid, but any known ones can be used. The resist films 53a and 53b formed in this way can be either negative type resist or positive type resist. It is preferred to use a negative type resist.
抗蝕膜53a、53b之厚度可為15 μm以下,可為10 μm以下,可為6 μm以下,可為4 μm以下。又,抗蝕膜53a、53b之厚度可為1 μm以上,可為3 μm以上,可為5 μm以上,可為7 μm以上。抗蝕膜53a、53b之厚度之範圍可藉由上述之複數個上限之候選值中之任意1個、與上述之複數個下限之候選值中之任意1個之組合來決定。The thickness of the anti-corrosion films 53a and 53b may be 15 μm or less, 10 μm or less, 6 μm or less, or 4 μm or less. Furthermore, the thickness of the anti-corrosion films 53a and 53b may be 1 μm or more, 3 μm or more, 5 μm or more, or 7 μm or more. The range of the thickness of the anti-corrosion films 53a and 53b may be determined by combining any one of the plurality of upper limit candidate values and any one of the plurality of lower limit candidate values.
繼而,使用曝光、顯影裝置72將抗蝕膜53a、53b曝光及顯影。藉此,如圖5C所示,可於第1面51a上形成第1抗蝕劑圖案53c,於第2面51b上形成第2抗蝕劑圖案53d。例如,於使用負型之抗蝕膜之情形下,可將不使光透過抗蝕膜中之欲除去之區域之光罩配置於抗蝕膜上,隔著光罩將抗蝕膜曝光,進而將抗蝕膜顯影。Next, the anti-etching films 53a and 53b are exposed and developed using the exposure and development device 72. Thus, as shown in FIG. 5C , a first anti-etching agent pattern 53c can be formed on the first surface 51a, and a second anti-etching agent pattern 53d can be formed on the second surface 51b. For example, when a negative anti-etching film is used, a photomask that prevents light from passing through the region to be removed in the anti-etching film can be placed on the anti-etching film, and the anti-etching film can be exposed through the photomask, and then the anti-etching film can be developed.
繼而,使用蝕刻裝置73,以第1抗蝕劑圖案53c、第2抗蝕劑圖案53d為遮罩而蝕刻金屬板51(蝕刻步驟)。蝕刻步驟可包含第1面蝕刻步驟及第2面蝕刻步驟。Next, the metal plate 51 is etched using the first resist pattern 53c and the second resist pattern 53d as masks using the etching device 73 (etching step). The etching step may include a first surface etching step and a second surface etching step.
於圖5D中顯示表示有孔區域22中之第1面蝕刻步驟之一例之概略圖。於第1面蝕刻步驟中,使用蝕刻液來蝕刻第1面51a中未由第1抗蝕劑圖案53c覆蓋之區域。此時,第2面51b可由具有對於蝕刻液之耐性之樹脂等覆蓋。FIG5D is a schematic diagram showing an example of the first surface etching step in the hole region 22. In the first surface etching step, an etching liquid is used to etch the area of the first surface 51a that is not covered by the first resist pattern 53c. At this time, the second surface 51b may be covered with a resin or the like that is resistant to the etching liquid.
藉由蝕刻液,於未由第1抗蝕劑圖案53c覆蓋之第1面51a中,浸蝕持續進行(圖5D)。藉此,於第1面51a形成多數個第1凹部30。此外,金屬板51之蝕刻可自抗蝕劑圖案之孔向各種方向各向同性地進行。因而,沿著金屬遮罩20之厚度方向之各位置之第1凹部30及第2凹部35之剖面積為如自表面隨著沿厚度方向深入而逐漸變小之形狀。The etching is continued in the first surface 51a not covered by the first resist pattern 53c by the etching liquid (FIG. 5D). Thus, a plurality of first recesses 30 are formed on the first surface 51a. In addition, the etching of the metal plate 51 can be performed isotropically from the hole of the resist pattern to various directions. Therefore, the cross-sectional area of the first recess 30 and the second recess 35 at each position along the thickness direction of the metal mask 20 is a shape that gradually decreases as it goes deeper along the thickness direction from the surface.
於圖5E中顯示表示有孔區域22中之第2面蝕刻步驟之一例之概略圖。於第2面蝕刻步驟中,使用蝕刻液來蝕刻第2面51b中未由第2抗蝕劑圖案53d覆蓋之區域。此時,於第1面蝕刻步驟中覆蓋第2面51b之膜等可預先剝離。又,第1面51a可由具有對於蝕刻液之耐性之樹脂54等覆蓋。FIG. 5E shows a schematic diagram of an example of the second surface etching step in the hole region 22. In the second surface etching step, an etching liquid is used to etch the area of the second surface 51b that is not covered by the second resist pattern 53d. At this time, the film or the like that covered the second surface 51b in the first surface etching step may be peeled off in advance. In addition, the first surface 51a may be covered with a resin 54 or the like that has resistance to the etching liquid.
藉由蝕刻液,於未由第2抗蝕劑圖案53d覆蓋之第2面51b中,浸蝕持續進行(圖5E)。藉此,於第2面51b形成第2凹部35。而且,第1凹部30與第2凹部35彼此相互連通,藉此,形成貫通孔25。The etching liquid is used to continuously etch the second surface 51b not covered by the second resist pattern 53d (FIG. 5E). Thus, the second recess 35 is formed on the second surface 51b. Furthermore, the first recess 30 and the second recess 35 are connected to each other, thereby forming a through hole 25.
作為蝕刻液,只要為先前周知者,則無特別限定,例如舉出包含氯化鐵溶液及鹽酸者。The etching solution is not particularly limited as long as it is conventionally known, and examples thereof include a solution containing ferric chloride and hydrochloric acid.
於第2面蝕刻步驟中,如圖5E所示,可持續進行蝕刻直至將相鄰之第2凹部35連接為止。於將相鄰之第2凹部35連接之部位,相鄰之第2凹部35會合而形成稜線33。又,稜線33與第2抗蝕劑圖案53d分開,於稜線33之頂部,因蝕刻所致之浸蝕亦沿金屬板51之厚度方向持續進行。藉此,第2抗蝕劑圖案53d自金屬板51剝離。此外,第2面51b可部分殘留於相鄰之第2凹部35之間。In the second surface etching step, as shown in FIG. 5E , etching may be continued until adjacent second recesses 35 are connected. At the portion where adjacent second recesses 35 are connected, the adjacent second recesses 35 meet to form a ridge 33. Furthermore, the ridge 33 is separated from the second resist pattern 53d, and at the top of the ridge 33, etching caused by etching also continues along the thickness direction of the metal plate 51. Thus, the second resist pattern 53d is peeled off from the metal plate 51. In addition, the second surface 51b may partially remain between the adjacent second recesses 35.
於圖5F中顯示表示應力分散區域24中之第2面蝕刻步驟之一例之概略圖。有孔區域22之第2凹部35與應力分散區域24之第3凹部37可藉由相同之第2面蝕刻步驟來形成。於第2面蝕刻步驟中,如圖5F所示,可持續進行蝕刻直至將相鄰之第3凹部37連接為止。於將相鄰之第3凹部37連接之部位,相鄰之第3凹部37會合而形成稜線39。FIG5F is a schematic diagram showing an example of the second surface etching step in the stress dispersion region 24. The second recess 35 of the hole region 22 and the third recess 37 of the stress dispersion region 24 can be formed by the same second surface etching step. In the second surface etching step, as shown in FIG5F, etching can be continued until the adjacent third recesses 37 are connected. At the portion where the adjacent third recesses 37 are connected, the adjacent third recesses 37 meet to form an ridge 39.
進而,使用剝離裝置74,自金屬板51剝離對抗蝕劑圖案或蝕刻液具有耐性之樹脂54等。而且,藉由使用分離裝置75,實施分離步驟,該分離步驟藉由將長條之金屬板51裁斷,而自金屬板51分離由單片狀之金屬板構成之金屬遮罩20。如此,可獲得金屬遮罩20。Furthermore, the resin 54 or the like resistant to the resist pattern or the etching liquid is stripped from the metal plate 51 using the stripping device 74. Furthermore, the metal mask 20 made of a single metal plate is separated from the metal plate 51 by cutting the long metal plate 51 using the stripping device 75. In this way, the metal mask 20 can be obtained.
本揭示之一實施形態之金屬遮罩裝置10具有:框架15、及設置於框架15之上述金屬遮罩20。金屬遮罩20可第2面20b與框架15接觸而設置於框架15。於圖6中顯示自金屬遮罩20之第1面20a側觀察金屬遮罩裝置10之俯視圖。又,於圖7中顯示表示蒸鍍裝置之剖視圖。The metal mask device 10 of one embodiment of the present disclosure comprises: a frame 15, and the metal mask 20 disposed on the frame 15. The metal mask 20 is disposed on the frame 15 so that the second surface 20b of the metal mask 20 is in contact with the frame 15. FIG6 shows a top view of the metal mask device 10 viewed from the first surface 20a of the metal mask 20. FIG7 shows a cross-sectional view of the evaporation device.
本揭示之金屬遮罩裝置10可對一個框架安裝複數個金屬遮罩20(圖6)。該情形下,複數個金屬遮罩20可沿著與金屬遮罩20之長邊方向D2交叉之寬度方向D1排列。又,各金屬遮罩20可於金屬遮罩20之長邊方向D2之兩端部23a中固定於框架15。The metal shield device 10 of the present disclosure can install a plurality of metal shields 20 on one frame ( FIG. 6 ). In this case, the plurality of metal shields 20 can be arranged along a width direction D1 intersecting with the long side direction D2 of the metal shield 20. In addition, each metal shield 20 can be fixed to the frame 15 at both ends 23a of the long side direction D2 of the metal shield 20.
又,可對一個框架15安裝如圖1C所示之一片金屬遮罩20。此時,金屬遮罩20可於周圍區域23之端部23a中固定於框架15。In addition, a metal shield 20 as shown in FIG. 1C may be installed on a frame 15. At this time, the metal shield 20 may be fixed to the frame 15 at the end 23a of the peripheral region 23.
向框架15之固定方法無特別限定,例如舉出熔接等。The method of fixing to the frame 15 is not particularly limited, and may include, for example, welding.
金屬遮罩裝置10可具備固定於框架15、且於金屬遮罩20之厚度方向上部分重疊於金屬遮罩20之構件。作為此種構件之例,無特別限定,例如,舉出沿與金屬遮罩20之長邊方向交叉之方向延伸且支持金屬遮罩20之構件、重疊於相鄰之2個金屬遮罩之間之間隙之構件等。The metal mask device 10 may include a member fixed to the frame 15 and partially overlapping the metal mask 20 in the thickness direction of the metal mask 20. Examples of such a member include, but are not limited to, a member extending in a direction intersecting the long side direction of the metal mask 20 and supporting the metal mask 20, and a member overlapping the gap between two adjacent metal masks.
其次,關於使用本揭示之金屬遮罩20來製造有機EL顯示裝置之方法,一面參照圖7,一面進行說明。有機EL顯示裝置可以積層之狀態具備基板92、及設置成圖案狀之包含蒸鍍材料98之蒸鍍層。Next, a method for manufacturing an organic EL display device using the metal mask 20 of the present disclosure will be described with reference to Fig. 7. The organic EL display device may include a substrate 92 and a vapor deposition layer including a vapor deposition material 98 arranged in a pattern in a stacked state.
本揭示之一實施形態之有機EL顯示裝置之製造方法無特別限定,例如,包含使用金屬遮罩20使蒸鍍材料98蒸鍍於基板92等基板上之蒸鍍步驟。The manufacturing method of the organic EL display device of one embodiment of the present disclosure is not particularly limited, and for example, includes a evaporation step of using a metal mask 20 to evaporate the evaporation material 98 onto a substrate such as a substrate 92 .
於蒸鍍步驟中,首先,以金屬遮罩20與基板92對向之方式配置金屬遮罩裝置10。此時,可如圖7所示,金屬遮罩20之第1面20a與基板92對向。此處,基板92係玻璃基板等之蒸鍍對象物。In the evaporation step, first, the metal mask device 10 is arranged in such a manner that the metal mask 20 faces the substrate 92. At this time, as shown in Fig. 7, the first surface 20a of the metal mask 20 faces the substrate 92. Here, the substrate 92 is an evaporation object such as a glass substrate.
於如圖7所示,將金屬遮罩裝置10收容於蒸鍍裝置90之情形下,與基板92對面之金屬遮罩20之面為第1面20a,位於保持蒸鍍材料98之坩堝94側之金屬遮罩20之面為第2面20b。於蒸鍍裝置90內,在基板92之坩堝94側之面配置金屬遮罩20。此處,金屬遮罩20與基板92可藉由磁力而密接。As shown in FIG. 7 , when the metal mask device 10 is housed in the evaporation device 90, the surface of the metal mask 20 facing the substrate 92 is the first surface 20a, and the surface of the metal mask 20 located on the crucible 94 side holding the evaporation material 98 is the second surface 20b. In the evaporation device 90, the metal mask 20 is arranged on the crucible 94 side of the substrate 92. Here, the metal mask 20 and the substrate 92 can be closely attached by magnetic force.
蒸於蒸鍍裝置90內,可在金屬遮罩裝置10之下方,配置收容蒸鍍材料98之坩堝94、及加熱坩堝94之加熱器96。此處,蒸鍍材料98作為一例,可為有機發光材料。坩堝94內之蒸鍍材料98藉由自加熱器96之加熱而氣化或昇華。氣化或昇華之蒸鍍材料98經由金屬遮罩20之貫通孔25附著於基板92。藉此,於金屬遮罩20之貫通孔25之位置以對應之所期望之圖案將蒸鍍材料98成膜於基板92之表面。此外,於蒸鍍步驟中,蒸鍍裝置90之內部可設為真空氣體環境。In the evaporation device 90, a crucible 94 for accommodating an evaporation material 98 and a heater 96 for heating the crucible 94 may be arranged below the metal mask device 10. Here, the evaporation material 98 may be an organic light-emitting material, for example. The evaporation material 98 in the crucible 94 is vaporized or sublimated by heating from the heater 96. The vaporized or sublimated evaporation material 98 is attached to the substrate 92 through the through hole 25 of the metal mask 20. Thus, the evaporation material 98 is formed on the surface of the substrate 92 in a desired pattern corresponding to the position of the through hole 25 of the metal mask 20. In addition, during the evaporation step, the interior of the evaporation device 90 may be set to a vacuum gas environment.
在欲根據RGB等之像素而蒸鍍不同種類之蒸鍍材料之情形下,可根據蒸鍍材料98之色,使用不同之金屬遮罩20,將蒸鍍材料98成膜於基板92之表面。例如,可將紅色用之蒸鍍材料98、綠色用之蒸鍍材料98及藍色用之蒸鍍材料98依序蒸鍍於基板92。又,可沿著貫通孔25之排列方向(前述之一方向)使金屬遮罩20(金屬遮罩裝置10)與基板92一點一點地相對移動,依序蒸鍍紅色用之蒸鍍材料98、綠色用之蒸鍍材料98及藍色用之蒸鍍材料98。In the case where different types of deposition materials are to be deposited according to pixels such as RGB, different metal masks 20 can be used according to the colors of the deposition materials 98 to form the deposition materials 98 on the surface of the substrate 92. For example, the deposition materials 98 for red, the deposition materials 98 for green, and the deposition materials 98 for blue can be sequentially deposited on the substrate 92. In addition, the metal mask 20 (metal mask device 10) and the substrate 92 can be relatively moved point by point along the arrangement direction of the through holes 25 (one of the aforementioned directions) to sequentially deposit the deposition materials 98 for red, the deposition materials 98 for green, and the deposition materials 98 for blue.
又,有機EL顯示裝置之製造方法可除使用金屬遮罩20使蒸鍍材料98蒸鍍於基板92等基板上之蒸鍍步驟以外,亦包含各種步驟。例如,有機EL顯示裝置之製造方法可包含在基板形成第1電極之步驟。蒸鍍層形成於第1電極之上。又,有機EL顯示裝置之製造方法可包含在蒸鍍層之上形成第2電極之步驟。又,有機EL顯示裝置之製造方法可包含將設置於基板92之第1電極、蒸鍍層、第2電極密封之密封步驟。Furthermore, the manufacturing method of the organic EL display device may include various steps in addition to the evaporation step of evaporating the evaporation material 98 on the substrate such as the substrate 92 using the metal mask 20. For example, the manufacturing method of the organic EL display device may include the step of forming the first electrode on the substrate. The evaporation layer is formed on the first electrode. Furthermore, the manufacturing method of the organic EL display device may include the step of forming the second electrode on the evaporation layer. Furthermore, the manufacturing method of the organic EL display device may include the step of sealing the first electrode, the evaporation layer, and the second electrode provided on the substrate 92.
使用金屬遮罩20形成於基板92等基板上之蒸鍍層不限於上述之有機發光材料蒸鍍而形成之發光層,可包含其他層。例如,蒸鍍層可自第1電極側依序包含電洞注入層、電洞輸送層、發光層、電子輸送層、電子注入層等。該情形下,可於各層分別實施使用對應之金屬遮罩20之蒸鍍步驟。The evaporated layer formed on the substrate 92 or the like using the metal mask 20 is not limited to the luminescent layer formed by evaporating the above-mentioned organic luminescent material, and may include other layers. For example, the evaporated layer may include a hole injection layer, a hole transport layer, a luminescent layer, an electron transport layer, an electron injection layer, etc. in order from the first electrode side. In this case, the evaporation step using the corresponding metal mask 20 may be implemented on each layer separately.
此外,能夠對上述之實施形態施加各種變更。以下,根據需要,一面參照圖式,一面關於變化例進行說明。於以下之說明及以下之說明所使用之圖式中,關於可與上述之實施形態同樣地構成之部分,使用與對於上述之實施形態下之對應下之部分使用之符號相同之符號,且省略重複之說明。又,於在上述之實施形態中獲得之作用效果顯然於變化例中亦獲得之情形下,亦省略其說明。In addition, various changes can be made to the above-mentioned implementation form. Below, as needed, the variation examples are explained while referring to the drawings. In the following description and the drawings used in the following description, the same symbols as the symbols used for the corresponding parts in the above-mentioned implementation form are used for the parts that can be constructed in the same way as the above-mentioned implementation form, and repeated descriptions are omitted. In addition, in the case where the effects obtained in the above-mentioned implementation form are obviously also obtained in the variation examples, the description is also omitted.
(變化例) 作為第1變化例,金屬遮罩20可具有複數行之複數個有孔區域22之行。換言之,複數個有孔區域22可排列成格子狀。該情形下,應力分散區域24可位於周圍區域23之緣23b與有孔區域22之間。又,應力分散區域24可位於複數個有孔區域22之間。 (Variation) As a first variation, the metal mask 20 may have a plurality of rows of a plurality of porous regions 22. In other words, the plurality of porous regions 22 may be arranged in a grid pattern. In this case, the stress dispersion region 24 may be located between the edge 23b of the surrounding region 23 and the porous region 22. Furthermore, the stress dispersion region 24 may be located between the plurality of porous regions 22.
於金屬遮罩20具有複數行複數個有孔區域22之行時,可對一個框架15安裝一片金屬遮罩20。該情形下,端部23a可位於金屬遮罩20之周緣。於端部23a具有切割線26之情形下,應力分散區域24c可位於切割線26與有孔區域22之間。又,應力分散區域24d可位於切割線26與短邊23d之間。When the metal mask 20 has a plurality of rows of a plurality of perforated areas 22, one metal mask 20 may be mounted on one frame 15. In this case, the end 23a may be located at the periphery of the metal mask 20. When the end 23a has a cutting line 26, the stress dispersion area 24c may be located between the cutting line 26 and the perforated area 22. Furthermore, the stress dispersion area 24d may be located between the cutting line 26 and the short side 23d.
作為第3變化例,一個有孔區域22亦可構成為對應於複數個有機EL顯示裝置。例如,有孔區域22可具有第1有孔區域及第2有孔區域。於該例中,一個第1有孔區域可構成為對應於一個有機EL顯示裝置。又,第2有孔區域可以將相鄰之第1有孔區域分割之方式配置。As a third variation, one perforated region 22 may also be configured to correspond to a plurality of organic EL display devices. For example, the perforated region 22 may include a first perforated region and a second perforated region. In this example, one first perforated region may be configured to correspond to one organic EL display device. In addition, the second perforated region may be configured to divide the adjacent first perforated region.
第1有孔區域與第2有孔區域之貫通孔之密度不同。更具體而言,第1有孔區域中之貫通孔之密度可高於第2有孔區域中之貫通孔之密度。此處,貫通孔之密度意指每單位面積之貫通孔之總面積。又,一個貫通孔之面積意指俯視下為最小之貫通孔之開口之面積。此處,俯視下為最小之貫通孔之開口可為由連接部41包圍之開口。The density of through holes in the first porous region is different from that in the second porous region. More specifically, the density of through holes in the first porous region may be higher than the density of through holes in the second porous region. Here, the density of through holes means the total area of through holes per unit area. In addition, the area of a through hole means the area of the smallest opening of the through hole in a top view. Here, the smallest opening of the through hole in a top view may be the opening surrounded by the connecting portion 41.
作為第3變化例,藉由使用雷射照射機照射雷射光,取代蝕刻,而可形成第1凹部30、第2凹部35、及第3凹部37。 實施例 As a third variation, the first recess 30, the second recess 35, and the third recess 37 can be formed by irradiating laser light using a laser irradiator instead of etching. Example
以下,使用實施例及比較例更具體地說明本發明。本發明不受以下之實施例任何限定。The present invention is described in more detail below using examples and comparative examples. The present invention is not limited to the following examples in any way.
(實施例) 利用上述之金屬遮罩之製造方法,製造出於金屬板具有由第1凹部及第2凹部構成之貫通孔及第3凹部之金屬遮罩。此時,第3凹部之短軸長度R、與在短軸方向排列之節距P具有規定之關係。又,為金屬遮罩之原材料之金屬板採用銦鋼材。 (Example) Using the above-mentioned method for manufacturing a metal mask, a metal mask having a through hole formed by a first recess and a second recess and a third recess is manufactured. At this time, the minor axis length R of the third recess and the pitch P arranged in the minor axis direction have a prescribed relationship. In addition, the metal plate used as the raw material of the metal mask is indium steel.
(比較例) 除第3凹部之短軸長度R、與在短軸方向排列之節距P具有表1所記載之規定之關係以外,與實施例同樣地獲得金屬遮罩。 (Comparative Example) Except that the minor axis length R of the third recess and the pitch P arranged in the minor axis direction have the prescribed relationship described in Table 1, a metal mask is obtained in the same manner as in the embodiment.
(評估) 當在金屬遮罩長度方向施加拉伸力而將金屬遮罩張緊熔接於框架時,將在遮罩寬度方向產生之起伏作為張緊熔接後之波動量進行了測定。具體而言,對將金屬遮罩張緊熔接於框架而成者進行使用新東超精密(株式會社)製之μ-M1000之三維測定而獲得波動量。基於獲得之波動量,根據下述評估基準,對皺褶之產生進行了評估。 ◎・・・張緊熔接後之波動量為100 μm以下。 〇・・・張緊熔接後之波動量超過100 μm且為200 μm以下。 ×・・・張緊熔接後之波動量超過200 μm。 (Evaluation) When a metal mask is tension-welded to a frame by applying a tensile force in the length direction, the fluctuations in the width direction of the mask are measured as the fluctuations after tension welding. Specifically, the fluctuations were obtained by three-dimensional measurement using μ-M1000 manufactured by Shinto Ultra Precision Co., Ltd. The fluctuations obtained were evaluated for the generation of wrinkles according to the following evaluation criteria. ◎・・・The fluctuation after tension welding is 100 μm or less. ○・・・The fluctuation after tension welding exceeds 100 μm and is 200 μm or less. ×・・・The fluctuation after tension welding exceeds 200 μm.
此外,所謂上述波動量為100 μm以下,係金屬遮罩對基板之密接性亦為佳,大致無金屬遮罩之上浮之狀態,所謂上述波動量超過100 μm且為200 μm以下,係藉由磁力而金屬遮罩向基板密接,從而無模糊之狀態,所謂波動量超過200 μm,係因金屬遮罩與基板之密接不良而產生模糊之狀態。In addition, the so-called fluctuation momentum being less than 100 μm means that the metal mask has good adhesion to the substrate, and there is almost no floating of the metal mask. The so-called fluctuation momentum being more than 100 μm and less than 200 μm means that the metal mask is closely attached to the substrate by magnetic force, and thus there is no blurring. The so-called fluctuation momentum being more than 200 μm means that blurring occurs due to poor adhesion between the metal mask and the substrate.
此外,上述「規定之步驟」意指製造金屬遮罩,將製造出之金屬遮罩張緊熔解於框架而製造金屬遮罩裝置,使用獲得之金屬遮罩裝置進行蒸鍍,自洗淨金屬遮罩裝置至再次使用於蒸鍍之一系列之步驟。In addition, the above-mentioned "prescribed steps" refer to a series of steps including manufacturing a metal mask, manufacturing a metal mask device by tensioning and melting the manufactured metal mask on a frame, using the obtained metal mask device for evaporation, and cleaning the metal mask device until it is reused for evaporation.
[表1]
本發明之金屬遮罩作為使用於有機EL顯示裝置之製造之金屬遮罩等,具有產業上之可利用性。The metal mask of the present invention is applicable in the industry as a metal mask used in the manufacture of an organic EL display device.
10:金屬遮罩裝置 15:框架 20:金屬遮罩 20a:第1面 20b:第2面 22:有孔區域 23:周圍區域 23a:端部 23b:緣 23c:長邊 23d:短邊 24,24a,24b,24c,24d:應力分散區域 25:貫通孔 26:切割線 30:第1凹部 31:第1壁面 32:頂部 33:稜線 35:第2凹部 36:第2壁面 37:第3凹部/凹部 38:第3壁面 39:稜線 41:連接部 50:捲繞體 51:金屬板 51a:第1面 51b:第2面 52:芯 53a,53b:抗蝕膜 53c:第1抗蝕劑圖案 53d:第2抗蝕劑圖案 54:樹脂 70:製造裝置 71:抗蝕膜形成裝置 72:曝光、顯影裝置 73:蝕刻裝置 74:剝離裝置 75:分離裝置 90:蒸鍍裝置 92:基板 94:坩堝 96:加熱器 98:蒸鍍材料 D1:寬度方向 D2:長邊方向 H0,H1:高度 I-I’,II-II’,III-III’,IV-IV’,V-V’,VI-VI’:線 L0,L1,L2,L3,L4,L5:寬度 N:厚度方向 P:節距 R:長度 S1,S2:區域 S3,S4:範圍 10: Metal shielding device 15: Frame 20: Metal shielding 20a: 1st surface 20b: 2nd surface 22: Perforated area 23: Peripheral area 23a: End 23b: Edge 23c: Long side 23d: Short side 24,24a,24b,24c,24d: Stress dispersion area 25: Through hole 26: Cutting line 30: 1st recess 31: 1st wall 32: Top 33: Ridge 35: 2nd recess 36: 2nd wall 37: 3rd recess/recess 38: 3rd wall 39: Ridge 41: Connecting part 50: Winding body 51: Metal plate 51a: 1st surface 51b: 2nd surface 52: Core 53a, 53b: Anti-etching film 53c: 1st anti-etching agent pattern 53d: 2nd anti-etching agent pattern 54: Resin 70: Manufacturing device 71: Anti-etching film forming device 72: Exposure and development device 73: Etching device 74: Stripping device 75: Separation device 90: Evaporation device 92: Substrate 94: Crucible 96: Heater 98: Evaporation material D1: Width direction D2: Long side direction H0, H1: Height I-I’, II-II’, III-III’, IV-IV’, V-V’, VI-VI’: Line L0, L1, L2, L3, L4, L5: Width N: Thickness direction P: Pitch R: Length S1, S2: Area S3, S4: Range
圖1係顯示本揭示之一實施形態之金屬遮罩之俯視圖。 圖2A係自第2面側觀察有孔區域之俯視圖。 圖2B係沿著圖2A所示之I-I’線之剖視圖。 圖2C係沿著圖2A所示之II-II’線之剖視圖。 圖2D係沿著圖2A所示之III-III’線之剖視圖。 圖2E係自第2面側觀察圖2A所示之區域S1之立體圖。 圖3A係自第2面側觀察應力分散區域之俯視圖。 圖3B係沿著圖3A所示之IV-IV’線之剖視圖。 圖3C係沿著圖3A所示之V-V’線之剖視圖。 圖3D係沿著圖3A所示之VI-VI’線之剖視圖。 圖3E係自第2面側觀察圖3A所示之區域S2之立體圖。 圖4A係顯示應力分散區域中之凹部之排列例之俯視圖。 圖4B係顯示應力分散區域中之凹部之排列例之俯視圖。 圖4C係顯示應力分散區域中之凹部之排列例之俯視圖。 圖4D係顯示應力分散區域中之凹部之排列例之俯視圖。 圖4E係顯示應力分散區域中之凹部之排列例之俯視圖。 圖4F係顯示應力分散區域中之凹部之排列例之俯視圖。 圖5A係用於說明金屬遮罩之製造方法之一例之示意圖。 圖5B係顯示於金屬板上形成抗蝕膜之步驟之一例之圖。 圖5C係顯示將抗蝕膜圖案化之步驟之一例之圖。 圖5D係顯示有孔區域中之第1面蝕刻步驟之一例之圖。 圖5E係顯示有孔區域中之第2面蝕刻步驟之一例之圖。 圖5F係顯示應力分散區域中之第2面蝕刻步驟之一例之圖。 圖6係顯示本揭示之一實施形態之金屬遮罩裝置之圖。 圖7係顯示本揭示之一實施形態之蒸鍍裝置之剖視圖。 FIG. 1 is a top view of a metal mask showing an embodiment of the present disclosure. FIG. 2A is a top view of a hole region observed from the second surface side. FIG. 2B is a cross-sectional view along the I-I’ line shown in FIG. 2A. FIG. 2C is a cross-sectional view along the II-II’ line shown in FIG. 2A. FIG. 2D is a cross-sectional view along the III-III’ line shown in FIG. 2A. FIG. 2E is a three-dimensional view of the region S1 shown in FIG. 2A observed from the second surface side. FIG. 3A is a top view of a stress dispersion region observed from the second surface side. FIG. 3B is a cross-sectional view along the IV-IV’ line shown in FIG. 3A. FIG. 3C is a cross-sectional view along the V-V’ line shown in FIG. 3A. FIG. 3D is a cross-sectional view along the VI-VI’ line shown in FIG. 3A. FIG. 3E is a three-dimensional view of the region S2 shown in FIG. 3A observed from the second surface side. FIG. 4A is a top view showing an example of arrangement of recesses in the stress dispersion region. FIG. 4B is a top view showing an example of arrangement of recesses in the stress dispersion region. FIG. 4C is a top view showing an example of arrangement of recesses in the stress dispersion region. FIG. 4D is a top view showing an example of arrangement of recesses in the stress dispersion region. FIG. 4E is a top view showing an example of arrangement of recesses in the stress dispersion region. FIG. 4F is a top view showing an example of arrangement of recesses in the stress dispersion region. FIG. 5A is a schematic diagram for explaining an example of a method for manufacturing a metal mask. FIG. 5B is a diagram showing an example of a step of forming an anti-corrosion film on a metal plate. FIG. 5C is a diagram showing an example of a step of patterning an anti-etching film. FIG. 5D is a diagram showing an example of a step of etching the first surface in a porous region. FIG. 5E is a diagram showing an example of a step of etching the second surface in a porous region. FIG. 5F is a diagram showing an example of a step of etching the second surface in a stress dispersion region. FIG. 6 is a diagram showing a metal mask device in an embodiment of the present disclosure. FIG. 7 is a cross-sectional view of an evaporation device in an embodiment of the present disclosure.
20:金屬遮罩 20: Metal mask
20b:第2面 20b: Page 2
22:有孔區域 22: Perforated area
23:周圍區域 23:Surrounding area
23a:端部 23a: End
23b:緣 23b: Fate
23c:長邊 23c: Long side
23d:短邊 23d: short side
24a,24b,24c,24d:應力分散區域 24a, 24b, 24c, 24d: stress dispersion area
26:切割線 26: Cutting line
D1:寬度方向 D1: Width direction
D2:長邊方向 D2: Long side direction
L0,L1,L2,L3,L4,L5:寬度 L0,L1,L2,L3,L4,L5:Width
Claims (10)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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JP2022-162040 | 2022-10-07 |
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Publication Number | Publication Date |
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