TW202422688A - 噴孔板之製造方法 - Google Patents
噴孔板之製造方法 Download PDFInfo
- Publication number
- TW202422688A TW202422688A TW112135483A TW112135483A TW202422688A TW 202422688 A TW202422688 A TW 202422688A TW 112135483 A TW112135483 A TW 112135483A TW 112135483 A TW112135483 A TW 112135483A TW 202422688 A TW202422688 A TW 202422688A
- Authority
- TW
- Taiwan
- Prior art keywords
- nozzle
- hole
- aforementioned
- flow path
- manufacturing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 135
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims abstract description 35
- 238000000347 anisotropic wet etching Methods 0.000 claims abstract description 30
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 238000001312 dry etching Methods 0.000 claims description 19
- 238000001039 wet etching Methods 0.000 claims description 10
- 238000002347 injection Methods 0.000 abstract description 23
- 239000007924 injection Substances 0.000 abstract description 23
- 239000000243 solution Substances 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 69
- 238000005530 etching Methods 0.000 description 30
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 11
- 230000005499 meniscus Effects 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 230000007547 defect Effects 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical group [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 2
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 2
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- GNKTZDSRQHMHLZ-UHFFFAOYSA-N [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] Chemical compound [Si].[Si].[Si].[Ti].[Ti].[Ti].[Ti].[Ti] GNKTZDSRQHMHLZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- BBTXSTYZFZSWQW-UHFFFAOYSA-N niobium(5+);pentasilicate Chemical compound [Nb+5].[Nb+5].[Nb+5].[Nb+5].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] BBTXSTYZFZSWQW-UHFFFAOYSA-N 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Nozzles (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022-151245 | 2022-09-22 | ||
| JP2022151245 | 2022-09-22 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW202422688A true TW202422688A (zh) | 2024-06-01 |
Family
ID=90454581
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW112135483A TW202422688A (zh) | 2022-09-22 | 2023-09-18 | 噴孔板之製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPWO2024063030A1 (https=) |
| CN (1) | CN119923321A (https=) |
| TW (1) | TW202422688A (https=) |
| WO (1) | WO2024063030A1 (https=) |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3386099B2 (ja) * | 1995-07-03 | 2003-03-10 | セイコーエプソン株式会社 | インクジェット式記録ヘッド用ノズルプレート、これの製造方法、及びインクジェット式記録ヘッド |
| JP2002321356A (ja) * | 2001-04-24 | 2002-11-05 | Fuji Xerox Co Ltd | インクジェット記録ヘッドおよびその製造方法 |
| JP5277571B2 (ja) * | 2007-06-18 | 2013-08-28 | セイコーエプソン株式会社 | ノズル基板の製造方法及び液滴吐出ヘッドの製造方法 |
| KR101890755B1 (ko) * | 2011-11-25 | 2018-08-23 | 삼성전자 주식회사 | 잉크젯 프린팅 장치 및 노즐 형성 방법 |
| KR101968636B1 (ko) * | 2012-12-06 | 2019-04-12 | 삼성전자주식회사 | 잉크젯 프린팅 장치 및 노즐 형성 방법 |
| JP6900182B2 (ja) * | 2016-12-16 | 2021-07-07 | キヤノン株式会社 | 液体吐出ヘッド及び液体吐出ヘッドの製造方法 |
| JP7119943B2 (ja) * | 2018-11-26 | 2022-08-17 | コニカミノルタ株式会社 | ノズルプレートの製造方法及びインクジェットヘッドの製造方法 |
| WO2023008375A1 (ja) * | 2021-07-27 | 2023-02-02 | コニカミノルタ株式会社 | ノズルプレート、液滴吐出ヘッド、液滴吐出装置及びノズルプレートの製造方法 |
-
2023
- 2023-09-15 JP JP2024548242A patent/JPWO2024063030A1/ja active Pending
- 2023-09-15 WO PCT/JP2023/033794 patent/WO2024063030A1/ja not_active Ceased
- 2023-09-15 CN CN202380067639.9A patent/CN119923321A/zh active Pending
- 2023-09-18 TW TW112135483A patent/TW202422688A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN119923321A (zh) | 2025-05-02 |
| WO2024063030A1 (ja) | 2024-03-28 |
| JPWO2024063030A1 (https=) | 2024-03-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8613862B2 (en) | Method for manufacturing liquid discharge head substrate | |
| US7753495B2 (en) | Ink jet recording head, manufacturing method therefor, and substrate for ink jet recording head manufacture | |
| JP4021383B2 (ja) | ノズルプレート及びその製造方法 | |
| EP2493809A1 (en) | Structure manufacturing method and liquid discharge head substrate manufacturing method | |
| JP7119943B2 (ja) | ノズルプレートの製造方法及びインクジェットヘッドの製造方法 | |
| RU2507073C2 (ru) | Головка для выброса жидкости и способ ее изготовления | |
| TW202422688A (zh) | 噴孔板之製造方法 | |
| WO2023008375A1 (ja) | ノズルプレート、液滴吐出ヘッド、液滴吐出装置及びノズルプレートの製造方法 | |
| CN102470674B (zh) | 液体排出头用基板的制造方法 | |
| US7377629B2 (en) | Liquid discharge head with filter structure | |
| US8329047B2 (en) | Method for producing liquid discharge head | |
| US9669628B2 (en) | Liquid ejection head substrate, method of manufacturing the same, and method of processing silicon substrate | |
| JP5932342B2 (ja) | 液体吐出ヘッドの製造方法 | |
| JP7790551B2 (ja) | ノズルプレート、液滴吐出ヘッド、液滴吐出装置及びノズルプレートの製造方法 | |
| JP7683681B2 (ja) | ノズルプレートの製造方法 | |
| WO2022270237A1 (ja) | ノズルプレート、液滴吐出ヘッド、液滴吐出装置及びノズルプレートの製造方法 | |
| JP5862116B2 (ja) | 液体吐出装置の流路板の製造方法 | |
| US20070134928A1 (en) | Silicon wet etching method using parylene mask and method of manufacturing nozzle plate of inkjet printhead using the same | |
| JP4489637B2 (ja) | インクジェットヘッドおよびその製造方法 | |
| JP4261904B2 (ja) | インクジェット記録ヘッド用基板の製造方法、およびインクジェット記録ヘッドの製造方法 | |
| JP3147446B2 (ja) | インクジェット記録ヘッドおよびその製造方法 | |
| JP2007136875A (ja) | インクジェット記録ヘッド用基体 | |
| JP2007210242A (ja) | インクジェット記録ヘッド及びその作製方法 | |
| JP2002144581A (ja) | インクジェットヘッドおよびインクジェットヘッドのノズル形成方法 | |
| JP2007001296A (ja) | 液体吐出ヘッドおよびその製造方法 |